AU5597000A - Coatings on reflective mask substrates - Google Patents

Coatings on reflective mask substrates

Info

Publication number
AU5597000A
AU5597000A AU55970/00A AU5597000A AU5597000A AU 5597000 A AU5597000 A AU 5597000A AU 55970/00 A AU55970/00 A AU 55970/00A AU 5597000 A AU5597000 A AU 5597000A AU 5597000 A AU5597000 A AU 5597000A
Authority
AU
Australia
Prior art keywords
coatings
reflective mask
mask substrates
substrates
reflective
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU55970/00A
Other languages
English (en)
Inventor
Scott D. Hector
Patrick G. Kofron
Pawitter J. S. Mangat
Alan R. Stivers
John Taylor
Matthew A. Thompson
William Man-Wai Tong
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
University of California
Original Assignee
University of California
University of California Berkeley
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by University of California, University of California Berkeley filed Critical University of California
Publication of AU5597000A publication Critical patent/AU5597000A/en
Abandoned legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/46—Antireflective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/408—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes
    • H10P76/4085—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes characterised by the processes involved to create the masks
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—HANDLING OF PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K2201/00—Arrangements for handling radiation or particles
    • G21K2201/06—Arrangements for handling radiation or particles using diffractive, refractive or reflecting elements
    • G21K2201/067—Construction details

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
AU55970/00A 1999-06-07 2000-06-06 Coatings on reflective mask substrates Abandoned AU5597000A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13815899P 1999-06-07 1999-06-07
US60138158 1999-06-07
PCT/US2000/015578 WO2000075727A2 (en) 1999-06-07 2000-06-06 Coatings on reflective mask substrates

Publications (1)

Publication Number Publication Date
AU5597000A true AU5597000A (en) 2000-12-28

Family

ID=22480708

Family Applications (1)

Application Number Title Priority Date Filing Date
AU55970/00A Abandoned AU5597000A (en) 1999-06-07 2000-06-06 Coatings on reflective mask substrates

Country Status (6)

Country Link
US (1) US6352803B1 (https=)
EP (1) EP1190276A2 (https=)
JP (1) JP4959080B2 (https=)
KR (1) KR100805360B1 (https=)
AU (1) AU5597000A (https=)
WO (1) WO2000075727A2 (https=)

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US6319635B1 (en) * 1999-12-06 2001-11-20 The Regents Of The University Of California Mitigation of substrate defects in reticles using multilayer buffer layers
US6368942B1 (en) * 2000-03-31 2002-04-09 Euv Llc Method for fabricating an ultra-low expansion mask blank having a crystalline silicon layer
US6524881B1 (en) * 2000-08-25 2003-02-25 Micron Technology, Inc. Method and apparatus for marking a bare semiconductor die
US6821682B1 (en) * 2000-09-26 2004-11-23 The Euv Llc Repair of localized defects in multilayer-coated reticle blanks for extreme ultraviolet lithography
US6737201B2 (en) * 2000-11-22 2004-05-18 Hoya Corporation Substrate with multilayer film, reflection type mask blank for exposure, reflection type mask for exposure and production method thereof as well as production method of semiconductor device
JP3939132B2 (ja) * 2000-11-22 2007-07-04 Ｈｏｙａ株式会社 多層膜付き基板、露光用反射型マスクブランク、露光用反射型マスクおよびその製造方法、並びに半導体の製造方法
DE10206143B4 (de) * 2001-02-14 2006-11-16 Hoya Corp. Reflektierender Maskenrohling und reflektierende Maske für EUV-Belichtung und Verfahren zum Herstellen der Maske
JP2002299228A (ja) * 2001-04-03 2002-10-11 Nikon Corp レチクル、それを用いた露光装置及び露光方法
DE10164112A1 (de) * 2001-12-24 2003-07-03 Inst Oberflaechenmodifizierung Verfahren zur Defektanalyse an reflektiven Optiken
US7169685B2 (en) * 2002-02-25 2007-01-30 Micron Technology, Inc. Wafer back side coating to balance stress from passivation layer on front of wafer and be used as die attach adhesive
KR100455383B1 (ko) * 2002-04-18 2004-11-06 삼성전자주식회사 반사 포토마스크, 반사 포토마스크의 제조방법 및 이를이용한 집적회로 제조방법
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US7129010B2 (en) * 2002-08-02 2006-10-31 Schott Ag Substrates for in particular microlithography
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DE10255605B4 (de) * 2002-11-28 2005-07-07 Infineon Technologies Ag Reflektionsmaske zur Projektion einer Struktur auf einen Halbleiterwafer sowie Verfahren zu deren Herstellung
DE10302342A1 (de) * 2003-01-17 2004-08-05 Schott Glas Substrat für die EUV-Mikrolithographie und Herstellverfahren hierfür
DE10317792A1 (de) * 2003-04-16 2004-11-11 Schott Glas Maskenrohling zur Verwendung in der EUV-Lithographie und Verfahren zu dessen Herstellung
JP4232018B2 (ja) * 2003-07-25 2009-03-04 信越化学工業株式会社 フォトマスクブランク用基板の選定方法
US7075103B2 (en) * 2003-12-19 2006-07-11 General Electric Company Multilayer device and method of making
US20050238922A1 (en) * 2003-12-25 2005-10-27 Hoya Corporation Substrate with a multilayer reflection film, reflection type mask blank for exposure, reflection type mask for exposure and methods of manufacturing them
JP2005210093A (ja) * 2003-12-25 2005-08-04 Hoya Corp 多層反射膜付き基板、露光用反射型マスクブランクス及び露光用反射型マスク、並びにそれらの製造方法
US7198872B2 (en) * 2004-05-25 2007-04-03 International Business Machines Corporation Light scattering EUVL mask
DE102004031079B4 (de) * 2004-06-22 2008-11-13 Qimonda Ag Verfahren zur Herstellung einer Reflexionsmaske
US20060008749A1 (en) * 2004-07-08 2006-01-12 Frank Sobel Method for manufacturing of a mask blank for EUV photolithography and mask blank
US7407729B2 (en) * 2004-08-05 2008-08-05 Infineon Technologies Ag EUV magnetic contrast lithography mask and manufacture thereof
DE102004038548A1 (de) * 2004-08-06 2006-03-16 Schott Ag Verfahren zur Herstellung eines Maskenblank für photolithographische Anwendungen und Maskenblank
JP4604140B2 (ja) * 2004-09-13 2010-12-22 マニー株式会社 医療用針又は刃物
JP5042456B2 (ja) * 2005-03-03 2012-10-03 凸版印刷株式会社 ステンシルマスクの製造方法
US20070093038A1 (en) * 2005-10-26 2007-04-26 Andreas Koenig Method for making microchips and microchip made according to this method
JP5082857B2 (ja) 2005-12-12 2012-11-28 旭硝子株式会社 Ｅｕｖリソグラフィ用反射型マスクブランク、および該マスクブランク用の導電膜付基板
US7678511B2 (en) 2006-01-12 2010-03-16 Asahi Glass Company, Limited Reflective-type mask blank for EUV lithography
KR100755395B1 (ko) 2006-08-31 2007-09-04 삼성전자주식회사 반사 마스크, 반사 마스크 고정 장치 및 방법
JP4958147B2 (ja) * 2006-10-18 2012-06-20 Ｈｏｙａ株式会社 露光用反射型マスクブランク及び露光用反射型マスク、多層反射膜付き基板、並びに半導体装置の製造方法
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ATE526679T1 (de) * 2006-12-27 2011-10-15 Asahi Glass Co Ltd Reflexionsmaskenrohling für euv-lithographie
JP5018789B2 (ja) * 2007-01-31 2012-09-05 旭硝子株式会社 Ｅｕｖリソグラフィ用反射型マスクブランク
JP5040996B2 (ja) 2007-04-17 2012-10-03 旭硝子株式会社 Ｅｕｖリソグラフィ用反射型マスクブランク
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JP7318607B2 (ja) 2020-07-28 2023-08-01 Ａｇｃ株式会社 Ｅｕｖリソグラフィ用反射型マスクブランク、ｅｕｖリソグラフィ用反射型マスク、およびそれらの製造方法
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JP7367901B1 (ja) 2022-04-28 2023-10-24 Ａｇｃ株式会社 反射型マスクブランク、反射型マスクブランクの製造方法、反射型マスク、反射型マスクの製造方法
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Also Published As

Publication number Publication date
EP1190276A2 (en) 2002-03-27
JP4959080B2 (ja) 2012-06-20
WO2000075727A3 (en) 2001-05-17
KR20020010912A (ko) 2002-02-06
WO2000075727A2 (en) 2000-12-14
US6352803B1 (en) 2002-03-05
KR100805360B1 (ko) 2008-02-20
JP2003501823A (ja) 2003-01-14

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