ATE526679T1 - Reflexionsmaskenrohling für euv-lithographie - Google Patents

Reflexionsmaskenrohling für euv-lithographie

Info

Publication number
ATE526679T1
ATE526679T1 AT07860104T AT07860104T ATE526679T1 AT E526679 T1 ATE526679 T1 AT E526679T1 AT 07860104 T AT07860104 T AT 07860104T AT 07860104 T AT07860104 T AT 07860104T AT E526679 T1 ATE526679 T1 AT E526679T1
Authority
AT
Austria
Prior art keywords
mask blank
euv lithography
absorber layer
euv
reflection mask
Prior art date
Application number
AT07860104T
Other languages
English (en)
Inventor
Kazuyuki Hayashi
Kazuo Kadowaki
Takashi Sugiyama
Original Assignee
Asahi Glass Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asahi Glass Co Ltd filed Critical Asahi Glass Co Ltd
Application granted granted Critical
Publication of ATE526679T1 publication Critical patent/ATE526679T1/de

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
AT07860104T 2006-12-27 2007-12-25 Reflexionsmaskenrohling für euv-lithographie ATE526679T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2006350932 2006-12-27
PCT/JP2007/074875 WO2008084680A1 (ja) 2006-12-27 2007-12-25 Ｅｕｖリソグラフィ用反射型マスクブランク

Publications (1)

Publication Number Publication Date
ATE526679T1 true ATE526679T1 (de) 2011-10-15

Family

ID=39608576

Family Applications (1)

Application Number Title Priority Date Filing Date
AT07860104T ATE526679T1 (de) 2006-12-27 2007-12-25 Reflexionsmaskenrohling für euv-lithographie

Country Status (6)

Country Link
US (1) US7713666B2 (de)
EP (1) EP1973147B1 (de)
JP (1) JP5018787B2 (de)
AT (1) ATE526679T1 (de)
TW (1) TWI418926B (de)
WO (1) WO2008084680A1 (de)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI444757B (zh) * 2006-04-21 2014-07-11 旭硝子股份有限公司 用於極紫外光（ｅｕｖ）微影術之反射性空白光罩
WO2008084680A1 (ja) * 2006-12-27 2008-07-17 Asahi Glass Company, Limited Ｅｕｖリソグラフィ用反射型マスクブランク
WO2008093534A1 (ja) 2007-01-31 2008-08-07 Asahi Glass Company, Limited Ｅｕｖリソグラフィ用反射型マスクブランク
JP5040996B2 (ja) * 2007-04-17 2012-10-03 旭硝子株式会社 Ｅｕｖリソグラフィ用反射型マスクブランク
JP4998082B2 (ja) * 2007-05-17 2012-08-15 凸版印刷株式会社 反射型フォトマスクブランク及びその製造方法、反射型フォトマスク、並びに、半導体装置の製造方法
ES2351237T3 (es) * 2007-09-17 2011-02-01 The Tapemark Company Envase de distribucion con aplicador.
JP2009210802A (ja) * 2008-03-04 2009-09-17 Asahi Glass Co Ltd Ｅｕｖリソグラフィ用反射型マスクブランク
JP5348127B2 (ja) 2008-03-18 2013-11-20 旭硝子株式会社 Ｅｕｖリソグラフィ用反射型マスクブランク
WO2009154238A1 (ja) * 2008-06-19 2009-12-23 旭硝子株式会社 Ｅｕｖリソグラフィ用反射型マスクブランク
JP5541159B2 (ja) * 2008-07-14 2014-07-09 旭硝子株式会社 Ｅｕｖリソグラフィ用反射型マスクブランク、および、ｅｕｖリソグラフィ用反射型マスク
CN102203906B (zh) * 2008-10-30 2013-10-09 旭硝子株式会社 Euv光刻用反射型掩模坯料
KR20110090887A (ko) * 2008-10-30 2011-08-10 아사히 가라스 가부시키가이샤 Ｅｕｖ 리소그래피용 반사형 마스크 블랭크
MY154175A (en) * 2009-02-13 2015-05-15 Hoya Corp Substrate for a mask blank, mask blank, and photomask
JP5507876B2 (ja) * 2009-04-15 2014-05-28 Ｈｏｙａ株式会社 反射型マスクブランク及び反射型マスクの製造方法
JP4847629B2 (ja) * 2009-06-18 2011-12-28 Ｈｏｙａ株式会社 転写用マスクの製造方法
KR101076886B1 (ko) * 2009-06-22 2011-10-25 주식회사 하이닉스반도체 극자외선 리소그래피를 위한 마스크 및 이를 이용한 노광방법
EP2453464A1 (de) 2009-07-08 2012-05-16 Asahi Glass Company, Limited Reflexionsmaskenrohling für die euv-lithographie
JP5333016B2 (ja) * 2009-07-31 2013-11-06 旭硝子株式会社 Ｅｕｖリソグラフィ用反射型マスクブランク
KR20130007537A (ko) 2010-03-02 2013-01-18 아사히 가라스 가부시키가이샤 Ｅｕｖ 리소그래피용 반사형 마스크 블랭크 및 그 제조 방법
JP5708651B2 (ja) 2010-08-24 2015-04-30 旭硝子株式会社 Ｅｕｖリソグラフィ用反射型マスクブランク
JP5971122B2 (ja) 2011-02-01 2016-08-17 旭硝子株式会社 Ｅｕｖリソグラフィ用反射型マスクブランク
EP2763158A4 (de) * 2011-09-28 2015-12-30 Toppan Printing Co Ltd Reflektierender maskenrohling, reflektierende maske und verfahren zur herstellung eines reflektierenden maskenrohlings und einer reflektierenden maske
JP6060636B2 (ja) 2012-01-30 2017-01-18 旭硝子株式会社 Ｅｕｖリソグラフィ用反射型マスクブランク、および、ｅｕｖリソグラフィ用反射型マスク
US9612521B2 (en) * 2013-03-12 2017-04-04 Applied Materials, Inc. Amorphous layer extreme ultraviolet lithography blank, and manufacturing and lithography systems therefor
JP6287099B2 (ja) 2013-05-31 2018-03-07 旭硝子株式会社 Ｅｕｖリソグラフィ用反射型マスクブランク
JP6339807B2 (ja) * 2014-01-16 2018-06-06 株式会社ニューフレアテクノロジー 露光用マスクの製造方法、露光用マスクの製造システム、及び半導体装置の製造方法
JP6323873B2 (ja) * 2014-08-13 2018-05-16 国立研究開発法人産業技術総合研究所 軟ｘ線を用いた二次電池オペランド測定用電極

Family Cites Families (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0947882B1 (de) 1986-07-11 2006-03-29 Canon Kabushiki Kaisha Verkleinerndes Projektionsbelichtungssystem des Reflexionstyps für Röntgenstrahlung
DE3856054T2 (de) 1987-02-18 1998-03-19 Canon K.K., Tokio/Tokyo Reflexionsmaske
JPH0316116A (ja) * 1989-03-09 1991-01-24 Canon Inc Ｘ線リソグラフィー用マスク構造体及びそれを用いたｘ線露光方法
JP3078163B2 (ja) * 1993-10-15 2000-08-21 キヤノン株式会社 リソグラフィ用反射型マスクおよび縮小投影露光装置
US5928817A (en) 1997-12-22 1999-07-27 Intel Corporation Method of protecting an EUV mask from damage and contamination
JP2000003845A (ja) * 1998-06-15 2000-01-07 Fujitsu Ltd Ｘ線露光用マスクの製造方法
US6316150B1 (en) 1998-08-24 2001-11-13 Euv Llc Low thermal distortion extreme-UV lithography reticle
US6355381B1 (en) 1998-09-25 2002-03-12 Intel Corporation Method to fabricate extreme ultraviolet lithography masks
US6013399A (en) 1998-12-04 2000-01-11 Advanced Micro Devices, Inc. Reworkable EUV mask materials
EP1190276A2 (de) 1999-06-07 2002-03-27 The Regents of the University of California Beschichtungen für reflexionsmaskenträger
US6410193B1 (en) 1999-12-30 2002-06-25 Intel Corporation Method and apparatus for a reflective mask that is inspected at a first wavelength and exposed during semiconductor manufacturing at a second wavelength
US6479195B1 (en) 2000-09-15 2002-11-12 Intel Corporation Mask absorber for extreme ultraviolet lithography
JP3993005B2 (ja) * 2002-03-22 2007-10-17 Ｈｏｙａ株式会社 ハーフトーン型位相シフトマスクブランク、ハーフトーン型位相シフトマスク及びその製造方法、並びにパターン転写方法
JP3818171B2 (ja) * 2002-02-22 2006-09-06 Ｈｏｙａ株式会社 位相シフトマスクブランク及びその製造方法
US6645679B1 (en) 2001-03-12 2003-11-11 Advanced Micro Devices, Inc. Attenuated phase shift mask for use in EUV lithography and a method of making such a mask
US6610447B2 (en) * 2001-03-30 2003-08-26 Intel Corporation Extreme ultraviolet mask with improved absorber
US6583068B2 (en) 2001-03-30 2003-06-24 Intel Corporation Enhanced inspection of extreme ultraviolet mask
US6593037B1 (en) * 2001-05-02 2003-07-15 Advanced Micro Devices, Inc. EUV mask or reticle having reduced reflections
US6673520B2 (en) 2001-08-24 2004-01-06 Motorola, Inc. Method of making an integrated circuit using a reflective mask
US6627362B2 (en) 2001-10-30 2003-09-30 Intel Corporation Photolithographic mask fabrication
DE10307518B4 (de) * 2002-02-22 2011-04-14 Hoya Corp. Halbtonphasenschiebermaskenrohling, Halbtonphasenschiebermaske und Verfahren zu deren Herstellung
US7390596B2 (en) * 2002-04-11 2008-06-24 Hoya Corporation Reflection type mask blank and reflection type mask and production methods for them
JP3806702B2 (ja) * 2002-04-11 2006-08-09 Ｈｏｙａ株式会社 反射型マスクブランクス及び反射型マスク及びそれらの製造方法並びに半導体の製造方法
JP4163038B2 (ja) * 2002-04-15 2008-10-08 Ｈｏｙａ株式会社 反射型マスクブランク及び反射型マスク並びに半導体の製造方法
US7011910B2 (en) * 2002-04-26 2006-03-14 Hoya Corporation Halftone-type phase-shift mask blank, and halftone-type phase-shift mask
JP4212025B2 (ja) 2002-07-04 2009-01-21 Ｈｏｙａ株式会社 反射型マスクブランクス及び反射型マスク並びに反射型マスクの製造方法
JP2005208282A (ja) * 2004-01-22 2005-08-04 Hoya Corp ハーフトーン型位相シフトマスクブランクの製造方法、及びハーフトーン型位相シフトマスクの製造方法
TWI348590B (en) * 2004-03-31 2011-09-11 Shinetsu Chemical Co Halftone phase shift mask blank, halftone phase shift mask, and pattern transfer method
KR20070054651A (ko) 2004-09-17 2007-05-29 아사히 가라스 가부시키가이샤 Ｅｕｖ 리소그래피용 반사형 마스크 블랭크스 및 그 제조방법
JP2007085899A (ja) * 2005-09-22 2007-04-05 Ntt Advanced Technology Corp Ｘ線用吸収体
JP4926521B2 (ja) * 2006-03-30 2012-05-09 Ｈｏｙａ株式会社 反射型マスクブランクス及び反射型マスク並びに半導体装置の製造方法
WO2008084680A1 (ja) * 2006-12-27 2008-07-17 Asahi Glass Company, Limited Ｅｕｖリソグラフィ用反射型マスクブランク
WO2008093534A1 (ja) * 2007-01-31 2008-08-07 Asahi Glass Company, Limited Ｅｕｖリソグラフィ用反射型マスクブランク

Also Published As

Publication number Publication date
EP1973147B1 (de) 2011-09-28
US20080199787A1 (en) 2008-08-21
JP5018787B2 (ja) 2012-09-05
TWI418926B (zh) 2013-12-11
EP1973147A4 (de) 2009-10-28
US7713666B2 (en) 2010-05-11
WO2008084680A1 (ja) 2008-07-17
EP1973147A1 (de) 2008-09-24
JPWO2008084680A1 (ja) 2010-04-30
TW200844650A (en) 2008-11-16

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