ATE533084T1 - Stubstrat mit reflektierenden schichten geeignet zur herstellung von reflexionsmaskenrohlingen für die euv-lithographie - Google Patents

Stubstrat mit reflektierenden schichten geeignet zur herstellung von reflexionsmaskenrohlingen für die euv-lithographie

Info

Publication number
ATE533084T1
ATE533084T1 AT07707133T AT07707133T ATE533084T1 AT E533084 T1 ATE533084 T1 AT E533084T1 AT 07707133 T AT07707133 T AT 07707133T AT 07707133 T AT07707133 T AT 07707133T AT E533084 T1 ATE533084 T1 AT E533084T1
Authority
AT
Austria
Prior art keywords
layer
substrate
reflective layer
euv lithography
stubstrate
Prior art date
Application number
AT07707133T
Other languages
English (en)
Inventor
Yoshiaki Ikuta
Toshiyuki Uno
Ken Ebihara
Original Assignee
Asahi Glass Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asahi Glass Co Ltd filed Critical Asahi Glass Co Ltd
Application granted granted Critical
Publication of ATE533084T1 publication Critical patent/ATE533084T1/de

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/40—Electrostatic discharge [ESD] related features, e.g. antistatic coatings or a conductive metal layer around the periphery of the mask substrate
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/60—Substrates
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/707—Chucks, e.g. chucking or un-chucking operations or structural details
    • G03F7/70708—Chucks, e.g. chucking or un-chucking operations or structural details being electrostatic; Electrostatically deformable vacuum chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0332—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their composition, e.g. multilayer masks, materials
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K2201/00—Arrangements for handling radiation or particles
    • G21K2201/06—Arrangements for handling radiation or particles using diffractive, refractive or reflecting elements
    • G21K2201/067—Construction details
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31551—Of polyamidoester [polyurethane, polyisocyanate, polycarbamate, etc.]
    • Y10T428/31616—Next to polyester [e.g., alkyd]

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Inorganic Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
AT07707133T 2006-01-12 2007-01-12 Stubstrat mit reflektierenden schichten geeignet zur herstellung von reflexionsmaskenrohlingen für die euv-lithographie ATE533084T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/330,205 US7678511B2 (en) 2006-01-12 2006-01-12 Reflective-type mask blank for EUV lithography
PCT/JP2007/050845 WO2007081059A2 (en) 2006-01-12 2007-01-12 Reflective-type mask blank for euv lithography

Publications (1)

Publication Number Publication Date
ATE533084T1 true ATE533084T1 (de) 2011-11-15

Family

ID=37891724

Family Applications (1)

Application Number Title Priority Date Filing Date
AT07707133T ATE533084T1 (de) 2006-01-12 2007-01-12 Stubstrat mit reflektierenden schichten geeignet zur herstellung von reflexionsmaskenrohlingen für die euv-lithographie

Country Status (7)

Country Link
US (2) US7678511B2 (de)
EP (3) EP1971898B1 (de)
JP (2) JP4862892B2 (de)
KR (1) KR101287697B1 (de)
AT (1) ATE533084T1 (de)
TW (1) TWI452418B (de)
WO (1) WO2007081059A2 (de)

Families Citing this family (42)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1962326B1 (de) * 2005-12-12 2012-06-06 Asahi Glass Company, Limited Maskenrohling des reflexionstyps für die euv-lithographie und substrat mit elektrisch leitfähigem film für den maskenrohling
JP4532533B2 (ja) * 2007-09-18 2010-08-25 アドバンスド・マスク・インスペクション・テクノロジー株式会社 Ｅｕｖ露光用マスクブランクおよびｅｕｖ露光用マスク
JP4663749B2 (ja) * 2008-03-11 2011-04-06 大日本印刷株式会社 反射型マスクの検査方法および製造方法
EP2256789B1 (de) * 2008-03-18 2012-07-04 Asahi Glass Company, Limited Reflexionsmaskenrohling für euv-lithographie
JP2010135732A (ja) * 2008-08-01 2010-06-17 Asahi Glass Co Ltd Ｅｕｖマスクブランクス用基板
KR20110065439A (ko) * 2008-09-05 2011-06-15 아사히 가라스 가부시키가이샤 Ｅｕｖ 리소그래피용 반사형 마스크 블랭크 및 그 제조 방법
EP2511945A4 (de) * 2009-12-09 2014-09-03 Asahi Glass Co Ltd Mehrschichtiger spiegel für die euv-lithographie und herstellungsverfahren dafür
WO2011108470A1 (ja) 2010-03-02 2011-09-09 旭硝子株式会社 Ｅｕｖリソグラフィ用反射型マスクブランクおよびその製造方法
JP5560776B2 (ja) * 2010-03-03 2014-07-30 旭硝子株式会社 Ｅｕｖリソグラフィ用反射型マスクブランクスの製造方法
DE102011079933A1 (de) * 2010-08-19 2012-02-23 Carl Zeiss Smt Gmbh Optisches Element für die UV- oder EUV-Lithographie
DE112012000658T5 (de) 2011-02-04 2013-11-07 Asahi Glass Company, Limited Substrat mit leitendem Film, Substrat mit Mehrschicht-Reflexionsfilm und Reflexionsmaskenrohling für eine EUV-Lithographie
WO2013046627A1 (ja) * 2011-09-28 2013-04-04 凸版印刷株式会社 反射型露光用マスクブランクおよび反射型露光用マスク
JP5950535B2 (ja) * 2011-10-25 2016-07-13 凸版印刷株式会社 反射型マスクブランクおよび反射型マスク
EP2581789B1 (de) * 2011-10-14 2020-04-29 Fundació Institut de Ciències Fotòniques Optisch transparente und elektrisch leitfähige Beschichtungen und Verfahren zu ihrer Ablagerung auf einem Substrat
JP6157874B2 (ja) * 2012-03-19 2017-07-05 Hoya株式会社 Ｅｕｖリソグラフィー用多層反射膜付き基板及びｅｕｖリソグラフィー用反射型マスクブランク、並びにｅｕｖリソグラフィー用反射型マスク及び半導体装置の製造方法
KR20140016662A (ko) 2012-07-30 2014-02-10 에스케이하이닉스 주식회사 극자외선 리소그래피용 마스크 및 그 제조방법, 마스크 정렬도 에러 보정방법
WO2014021235A1 (ja) 2012-07-31 2014-02-06 Hoya株式会社 反射型マスクブランク及びその製造方法、反射型マスクの製造方法、並びに半導体装置の製造方法
WO2014050891A1 (ja) 2012-09-28 2014-04-03 旭硝子株式会社 Ｅｕｖリソグラフィ用反射型マスクブランクおよびその製造方法、ならびにｅｕｖリソグラフィ用反射型マスクおよびその製造方法
US9664997B2 (en) * 2012-11-08 2017-05-30 Hoya Corporation Method of manufacturing mask blank and method of manufacturing transfer mask
KR102205778B1 (ko) * 2012-11-20 2021-01-21 호야 가부시키가이샤 마스크 블랭크, 전사용 마스크, 마스크 블랭크의 제조방법, 전사용 마스크의 제조방법 및 반도체 디바이스의 제조방법
US9417515B2 (en) 2013-03-14 2016-08-16 Applied Materials, Inc. Ultra-smooth layer ultraviolet lithography mirrors and blanks, and manufacturing and lithography systems therefor
US9632411B2 (en) 2013-03-14 2017-04-25 Applied Materials, Inc. Vapor deposition deposited photoresist, and manufacturing and lithography systems therefor
US9612521B2 (en) 2013-03-12 2017-04-04 Applied Materials, Inc. Amorphous layer extreme ultraviolet lithography blank, and manufacturing and lithography systems therefor
US20140272684A1 (en) 2013-03-12 2014-09-18 Applied Materials, Inc. Extreme ultraviolet lithography mask blank manufacturing system and method of operation therefor
US9354508B2 (en) 2013-03-12 2016-05-31 Applied Materials, Inc. Planarized extreme ultraviolet lithography blank, and manufacturing and lithography systems therefor
JP6263051B2 (ja) * 2013-03-13 2018-01-17 Hoya株式会社 ハーフトーン型位相シフトマスクブランクの製造方法
DE102013107192A1 (de) * 2013-07-08 2015-01-08 Carl Zeiss Laser Optics Gmbh Reflektives optisches Element für streifenden Einfall im EUV-Wellenlängenbereich
JP6303346B2 (ja) * 2013-09-09 2018-04-04 凸版印刷株式会社 反射型マスクブランクおよび反射型マスク
SG10201805252RA (en) * 2013-12-22 2018-08-30 Applied Materials Inc Extreme ultraviolet lithography system having chuck assembly and method of manufacturing thereof
JP2016122751A (ja) * 2014-12-25 2016-07-07 Hoya株式会社 多層反射膜付き基板、反射型マスクブランク及び反射型マスク、並びに多層反射膜付き基板、反射型マスクブランク及び半導体装置の製造方法
US10606166B2 (en) * 2015-06-17 2020-03-31 Hoya Corporation Substrate with electrically conductive film, substrate with multilayer reflective film, reflective mask blank, reflective mask, and method of manufacturing semiconductor device
NL2018691B1 (en) * 2016-04-25 2018-03-13 Asml Netherlands Bv A membrane for euv lithography
US10775693B2 (en) * 2016-12-07 2020-09-15 Fundacio Institut De Ciencies Fotoniques Transparent and electrically conductive coatings containing nitrides, borides or carbides
JP6904234B2 (ja) * 2017-12-15 2021-07-14 Ａｇｃ株式会社 マスクブランク用基板およびマスクブランク
SG11202005918UA (en) * 2017-12-27 2020-07-29 Hoya Corp Substrate with conductive film, substrate with multilayer reflective film, reflective mask blank, reflective mask, and semiconductor device manufacturing method
US11448955B2 (en) * 2018-09-27 2022-09-20 Taiwan Semiconductor Manufacturing Co., Ltd. Mask for lithography process and method for manufacturing the same
US11119398B2 (en) * 2018-09-28 2021-09-14 Taiwan Semiconductor Manufacturing Co., Ltd. EUV photo masks
WO2020100632A1 (ja) * 2018-11-15 2020-05-22 凸版印刷株式会社 反射型フォトマスクブランク及び反射型フォトマスク
KR20200088543A (ko) * 2019-01-14 2020-07-23 삼성전자주식회사 포토 마스크, 이의 제조방법, 및 이를 이용한 반도체 소자의 제조방법
KR20220006543A (ko) * 2019-05-21 2022-01-17 에이지씨 가부시키가이샤 Euv 리소그래피용 반사형 마스크 블랭크
US11506969B2 (en) 2020-05-26 2022-11-22 Taiwan Semiconductor Manufacturing Co., Ltd. EUV photo masks and manufacturing method thereof
CN113253563A (zh) 2020-05-26 2021-08-13 台湾积体电路制造股份有限公司 Euv光掩模及其制造方法

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6098408A (en) 1998-11-11 2000-08-08 Advanced Micro Devices System for controlling reflection reticle temperature in microlithography
JP2000208594A (ja) 1999-01-08 2000-07-28 Nissin Electric Co Ltd ガラス基板の吸着保持方法
WO2000075727A2 (en) 1999-06-07 2000-12-14 The Regents Of The University Of California Coatings on reflective mask substrates
JP3939132B2 (ja) * 2000-11-22 2007-07-04 Ｈｏｙａ株式会社 多層膜付き基板、露光用反射型マスクブランク、露光用反射型マスクおよびその製造方法、並びに半導体の製造方法
US6737201B2 (en) 2000-11-22 2004-05-18 Hoya Corporation Substrate with multilayer film, reflection type mask blank for exposure, reflection type mask for exposure and production method thereof as well as production method of semiconductor device
US6749973B2 (en) 2001-02-14 2004-06-15 Hoya Corporation Reflection type mask blank for EUV exposure and reflection type mask for EUV exposure as well as method of producing the mask
JP4390418B2 (ja) 2001-02-14 2009-12-24 Ｈｏｙａ株式会社 Ｅｕｖ露光用反射型マスクブランクおよびｅｕｖ露光用反射型マスク並びに半導体の製造方法
JP2002299228A (ja) * 2001-04-03 2002-10-11 Nikon Corp レチクル、それを用いた露光装置及び露光方法
DE10245204B4 (de) * 2001-09-28 2008-02-07 Hoya Corp. Maskenrohling
US7129010B2 (en) * 2002-08-02 2006-10-31 Schott Ag Substrates for in particular microlithography
DE10255605B4 (de) 2002-11-28 2005-07-07 Infineon Technologies Ag Reflektionsmaske zur Projektion einer Struktur auf einen Halbleiterwafer sowie Verfahren zu deren Herstellung
US6806007B1 (en) * 2003-05-02 2004-10-19 Advanced Micro Devices, Inc. EUV mask which facilitates electro-static chucking
CN1983028B (zh) * 2003-09-29 2012-07-25 Hoya株式会社 掩膜坯及变换掩膜的制造方法
JP4525893B2 (ja) * 2003-10-24 2010-08-18 信越化学工業株式会社 位相シフトマスクブランク、位相シフトマスク及びパターン転写方法
US6984475B1 (en) 2003-11-03 2006-01-10 Advanced Micro Devices, Inc. Extreme ultraviolet (EUV) lithography masks
JP2005210093A (ja) 2003-12-25 2005-08-04 Hoya Corp 多層反射膜付き基板、露光用反射型マスクブランクス及び露光用反射型マスク、並びにそれらの製造方法
US20050238922A1 (en) * 2003-12-25 2005-10-27 Hoya Corporation Substrate with a multilayer reflection film, reflection type mask blank for exposure, reflection type mask for exposure and methods of manufacturing them
US7230695B2 (en) 2004-07-08 2007-06-12 Asahi Glass Company, Ltd. Defect repair device and defect repair method
JP2006267595A (ja) * 2005-03-24 2006-10-05 Toshiba Corp マスクブランクスとその製造方法及び使用方法、並びにマスクとその製造方法及び使用方法

Also Published As

Publication number Publication date
US7960077B2 (en) 2011-06-14
WO2007081059A3 (en) 2007-11-08
US20100167187A1 (en) 2010-07-01
EP1971898A2 (de) 2008-09-24
KR101287697B1 (ko) 2013-07-24
JP4862892B2 (ja) 2012-01-25
WO2007081059A2 (en) 2007-07-19
KR20080092363A (ko) 2008-10-15
TW200741332A (en) 2007-11-01
EP2278395A1 (de) 2011-01-26
JP4862970B2 (ja) 2012-01-25
TWI452418B (zh) 2014-09-11
JP2011228744A (ja) 2011-11-10
JP2009523311A (ja) 2009-06-18
US7678511B2 (en) 2010-03-16
US20070160916A1 (en) 2007-07-12
EP2278394A1 (de) 2011-01-26
EP1971898B1 (de) 2011-11-09

Similar Documents

Publication Publication Date Title
ATE533084T1 (de) Stubstrat mit reflektierenden schichten geeignet zur herstellung von reflexionsmaskenrohlingen für die euv-lithographie
KR102174276B1 (ko) 나노구조화된 전사 테이프의 사용방법 및 그로부터 제조된 제품
US7819652B2 (en) Mold for nano-imprinting and method of manufacturing the same
EP2881790A3 (de) Fotomaskenrohling
TW201614362A (en) Reflective mask blank, method for manufacturing same, reflective mask, method for manufacturing same, and method for manufacturing semiconductor device
WO2008129914A1 (ja) Ｅｕｖマスクブランク
WO2005019503A3 (en) Sub-micron-scale patterning method and system
WO2009078380A1 (ja) ネガ型感光性樹脂積層体を用いたレジスト硬化物の製造方法、ネガ型感光性樹脂積層体、及びネガ型感光性樹脂積層体の使用方法
EP1947682A4 (de) Mehrschichtiger reflektierender spiegel, verfahren zur herstellung eines mehrschichtigen reflektierenden spiegels, optisches system, belichtungsvorrichtung und bauelemente-herstellungsverfahren
WO2007048563A3 (de) Verfahren zum transfer eines mehrschichtkörpers sowie transferfolie
RU2013112860A (ru) Маска для ближнепольной литографии и ее изготовление
WO2008093534A1 (ja) Ｅｕｖリソグラフィ用反射型マスクブランク
TW200736819A (en) Four-gradation photomask manufacturing method and photomask blank for use therein
ATE526679T1 (de) Reflexionsmaskenrohling für euv-lithographie
JP2010039352A5 (de)
JP2005345737A5 (de)
TW200633791A (en) Method for fabricating nano-adhesive
EP1695822A3 (de) Flachdruckplattenvorläufer und lithographisches Druckverfahren
ATE434518T1 (de) Verfahren zur herstellung eines negativ arbeitenden lithographischen druckplattenvorläufers
DE60336322D1 (de) Nanoimprint Lithographie in Mehrschichtsystemem
EP2015139A4 (de) Rolling einer reflektierenden fotomaske, herstellungsprozess dafür, reflektierende fotomaske und prozess zum herstellen eines halbleiterbauelements
CN102311094A (zh) 大面积且尺寸可控的基于su-8光刻胶的纳米流体通道制作方法
TW200643637A (en) Mask blanks
JP2008298962A5 (de)
JP2008116517A5 (de)