SG10201805252RA - Extreme ultraviolet lithography system having chuck assembly and method of manufacturing thereof - Google Patents

Extreme ultraviolet lithography system having chuck assembly and method of manufacturing thereof

Info

Publication number
SG10201805252RA
SG10201805252RA SG10201805252RA SG10201805252RA SG10201805252RA SG 10201805252R A SG10201805252R A SG 10201805252RA SG 10201805252R A SG10201805252R A SG 10201805252RA SG 10201805252R A SG10201805252R A SG 10201805252RA SG 10201805252R A SG10201805252R A SG 10201805252RA
Authority
SG
Singapore
Prior art keywords
manufacturing
lithography system
extreme ultraviolet
chuck
chuck assembly
Prior art date
Application number
SG10201805252RA
Inventor
Majeed A Foad
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of SG10201805252RA publication Critical patent/SG10201805252RA/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/707—Chucks, e.g. chucking or un-chucking operations or structural details
    • G03F7/70708—Chucks, e.g. chucking or un-chucking operations or structural details being electrostatic; Electrostatically deformable vacuum chucks
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/60—Substrates
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70783—Handling stress or warp of chucks, masks or workpieces, e.g. to compensate for imaging errors or considerations related to warpage of masks or workpieces due to their own weight
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
    • G03F7/70875—Temperature, e.g. temperature control of masks or workpieces via control of stage temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks

Abstract

EXTREME ULTRAVIOLET LITHOGRAPHY SYSTEM HAVING CHUCK ASSEMBLY AND METHOD OF MANUFACTURING THEREOF An EUV lithography system and method of manufacturing thereof includes: an EUV light source; a chuck being thermally conducting and smooth having a surface with a predetermined chuck flatness; and a reflective lens system for directing EUV light from the EUV light source over the surface of the chuck. FIG. 2
SG10201805252RA 2013-12-22 2014-12-19 Extreme ultraviolet lithography system having chuck assembly and method of manufacturing thereof SG10201805252RA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US201361919781P 2013-12-22 2013-12-22

Publications (1)

Publication Number Publication Date
SG10201805252RA true SG10201805252RA (en) 2018-08-30

Family

ID=53403784

Family Applications (2)

Application Number Title Priority Date Filing Date
SG11201602922RA SG11201602922RA (en) 2013-12-22 2014-12-19 Extreme ultraviolet lithography system having chuck assembly and method of manufacturing thereof
SG10201805252RA SG10201805252RA (en) 2013-12-22 2014-12-19 Extreme ultraviolet lithography system having chuck assembly and method of manufacturing thereof

Family Applications Before (1)

Application Number Title Priority Date Filing Date
SG11201602922RA SG11201602922RA (en) 2013-12-22 2014-12-19 Extreme ultraviolet lithography system having chuck assembly and method of manufacturing thereof

Country Status (7)

Country Link
US (1) US10691013B2 (en)
JP (1) JP6647198B2 (en)
KR (1) KR102340280B1 (en)
CN (1) CN105684128A (en)
SG (2) SG11201602922RA (en)
TW (1) TWI646576B (en)
WO (1) WO2015095808A1 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
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KR102374206B1 (en) 2017-12-05 2022-03-14 삼성전자주식회사 Method of fabricating semiconductor device
US20220310432A1 (en) * 2021-03-26 2022-09-29 Taiwan Semiconductor Manufacturing Co., Ltd. Substrate holder and methods of use

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US6897940B2 (en) * 2002-06-21 2005-05-24 Nikon Corporation System for correcting aberrations and distortions in EUV lithography
US7108960B2 (en) 2002-08-30 2006-09-19 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP4311711B2 (en) * 2003-02-24 2009-08-12 キヤノン株式会社 Exposure apparatus and device manufacturing method
JP4262031B2 (en) 2003-08-19 2009-05-13 キヤノン株式会社 Exposure apparatus and device manufacturing method
JP3894562B2 (en) * 2003-10-01 2007-03-22 キヤノン株式会社 Substrate adsorption apparatus, exposure apparatus, and device manufacturing method
JP3814598B2 (en) * 2003-10-02 2006-08-30 キヤノン株式会社 Temperature adjustment apparatus, exposure apparatus, and device manufacturing method
JP2005150527A (en) * 2003-11-18 2005-06-09 Canon Inc Holding device, exposure device and manufacturing method using the same
US7081956B1 (en) * 2003-12-04 2006-07-25 Advanced Micro Devices, Inc. Method and device for determining reflection lens pupil transmission distribution and illumination intensity distribution in reflective imaging system
US7407729B2 (en) * 2004-08-05 2008-08-05 Infineon Technologies Ag EUV magnetic contrast lithography mask and manufacture thereof
US7678511B2 (en) 2006-01-12 2010-03-16 Asahi Glass Company, Limited Reflective-type mask blank for EUV lithography
DE202006007122U1 (en) 2006-05-03 2006-09-07 Retzlaff, Udo, Dr. Electrostatic substrate holder e.g. chuck, for semiconductor industry, has substrate material with layers arranged on top of each other so that blocking voltage is formed at pn-junction during inadvertent discharge over contact surfaces
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JP2010122304A (en) * 2008-11-17 2010-06-03 Dainippon Printing Co Ltd Reflective mask blank, reflective mask, method for manufacturing reflective mask blank, and method for manufacturing reflective mask
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JP3199713U (en) * 2012-09-07 2015-09-10 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ Portable electrostatic chuck carrier for thin substrates
JP2014127630A (en) 2012-12-27 2014-07-07 Asahi Glass Co Ltd Reflective mask blank for euv lithography and manufacturing method thereof
US9612521B2 (en) * 2013-03-12 2017-04-04 Applied Materials, Inc. Amorphous layer extreme ultraviolet lithography blank, and manufacturing and lithography systems therefor
US20160035605A1 (en) * 2013-04-09 2016-02-04 Asml Netherlands B.V. Support Structure, Method of Controlling the Temperature Of The Same, and Apparatuses Including the Same
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Also Published As

Publication number Publication date
SG11201602922RA (en) 2016-07-28
JP2017502321A (en) 2017-01-19
KR20160100915A (en) 2016-08-24
TWI646576B (en) 2019-01-01
TW201535472A (en) 2015-09-16
CN105684128A (en) 2016-06-15
US20160342096A1 (en) 2016-11-24
US10691013B2 (en) 2020-06-23
KR102340280B1 (en) 2021-12-15
WO2015095808A1 (en) 2015-06-25
JP6647198B2 (en) 2020-02-14

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