JP4951276B2 - 半導体チップおよび半導体装置 - Google Patents

半導体チップおよび半導体装置 Download PDF

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Publication number
JP4951276B2
JP4951276B2 JP2006148399A JP2006148399A JP4951276B2 JP 4951276 B2 JP4951276 B2 JP 4951276B2 JP 2006148399 A JP2006148399 A JP 2006148399A JP 2006148399 A JP2006148399 A JP 2006148399A JP 4951276 B2 JP4951276 B2 JP 4951276B2
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Japan
Prior art keywords
pads
region
pad
semiconductor chip
main surface
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JP2006148399A
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English (en)
Japanese (ja)
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JP2007318014A5 (https=
JP2007318014A (ja
Inventor
直純 森野
和孝 森
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Electronics Corp
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Renesas Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by Renesas Electronics Corp filed Critical Renesas Electronics Corp
Priority to JP2006148399A priority Critical patent/JP4951276B2/ja
Publication of JP2007318014A publication Critical patent/JP2007318014A/ja
Publication of JP2007318014A5 publication Critical patent/JP2007318014A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/29—Bond pads specially adapted therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/931—Shapes of bond pads
    • H10W72/932—Plan-view shape, i.e. in top view
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/724—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked insulating package substrate, interposer or RDL
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/754—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL

Landscapes

  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Wire Bonding (AREA)
JP2006148399A 2006-05-29 2006-05-29 半導体チップおよび半導体装置 Active JP4951276B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2006148399A JP4951276B2 (ja) 2006-05-29 2006-05-29 半導体チップおよび半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006148399A JP4951276B2 (ja) 2006-05-29 2006-05-29 半導体チップおよび半導体装置

Publications (3)

Publication Number Publication Date
JP2007318014A JP2007318014A (ja) 2007-12-06
JP2007318014A5 JP2007318014A5 (https=) 2009-07-02
JP4951276B2 true JP4951276B2 (ja) 2012-06-13

Family

ID=38851590

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006148399A Active JP4951276B2 (ja) 2006-05-29 2006-05-29 半導体チップおよび半導体装置

Country Status (1)

Country Link
JP (1) JP4951276B2 (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100719157B1 (ko) * 1999-12-21 2007-05-17 소니 가부시끼 가이샤 더빙시스템 및 더빙방법
US10020288B2 (en) 2015-10-06 2018-07-10 Samsung Electronics Co., Ltd. Semiconductor chips including redistribution interconnections and related semiconductor packages

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5027605B2 (ja) 2007-09-25 2012-09-19 パナソニック株式会社 半導体装置
JP4422753B2 (ja) * 2007-12-14 2010-02-24 シャープ株式会社 半導体装置
JP2009246218A (ja) 2008-03-31 2009-10-22 Renesas Technology Corp 半導体装置の製造方法および半導体装置
JP5160295B2 (ja) 2008-04-30 2013-03-13 ルネサスエレクトロニクス株式会社 半導体装置及び検査方法
JP5160498B2 (ja) 2009-05-20 2013-03-13 ルネサスエレクトロニクス株式会社 半導体装置
JP2012151269A (ja) * 2011-01-19 2012-08-09 Seiko Epson Corp 半導体装置、及び半導体装置の製造方法
JP6519135B2 (ja) 2014-09-26 2019-05-29 日亜化学工業株式会社 発光装置及び発光装置用基板
JP6012688B2 (ja) * 2014-10-24 2016-10-25 ルネサスエレクトロニクス株式会社 半導体装置
CN106680547A (zh) * 2015-11-10 2017-05-17 上海和辉光电有限公司 一种测试垫布局结构及电性测试方法
JP6649189B2 (ja) * 2016-06-27 2020-02-19 ルネサスエレクトロニクス株式会社 半導体装置
JP6767789B2 (ja) * 2016-06-29 2020-10-14 ローム株式会社 半導体装置
JP6901902B2 (ja) * 2017-04-27 2021-07-14 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
CN110729252B (zh) * 2019-10-31 2021-12-24 中国电子科技集团公司第十三研究所 0.4mm节距的陶瓷四边引线扁平外壳
CN114973970A (zh) * 2022-06-28 2022-08-30 合肥维信诺科技有限公司 显示面板
CN116313859B (zh) * 2023-05-26 2023-09-15 青岛泰睿思微电子有限公司 悬臂产品的焊线方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59127852A (ja) * 1983-01-12 1984-07-23 Matsushita Electronics Corp 半導体装置
JP2001264391A (ja) * 2000-03-17 2001-09-26 Mitsubishi Materials Corp 電極端子及び該電極端子を有する回路素子
JP2002076075A (ja) * 2000-08-24 2002-03-15 Nec Corp 半導体集積回路
JP2002329742A (ja) * 2001-05-07 2002-11-15 Mitsubishi Electric Corp 半導体装置
WO2006134643A1 (ja) * 2005-06-14 2006-12-21 Renesas Technology Corp. 半導体装置及びその製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100719157B1 (ko) * 1999-12-21 2007-05-17 소니 가부시끼 가이샤 더빙시스템 및 더빙방법
US10020288B2 (en) 2015-10-06 2018-07-10 Samsung Electronics Co., Ltd. Semiconductor chips including redistribution interconnections and related semiconductor packages

Also Published As

Publication number Publication date
JP2007318014A (ja) 2007-12-06

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