JP4523425B2 - 半導体素子搭載用基板 - Google Patents
半導体素子搭載用基板 Download PDFInfo
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- JP4523425B2 JP4523425B2 JP2005005551A JP2005005551A JP4523425B2 JP 4523425 B2 JP4523425 B2 JP 4523425B2 JP 2005005551 A JP2005005551 A JP 2005005551A JP 2005005551 A JP2005005551 A JP 2005005551A JP 4523425 B2 JP4523425 B2 JP 4523425B2
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- 239000004065 semiconductor Substances 0.000 title claims description 105
- 239000000758 substrate Substances 0.000 title claims description 62
- 239000011295 pitch Substances 0.000 claims description 8
- 230000010354 integration Effects 0.000 description 5
- 239000004033 plastic Substances 0.000 description 5
- 239000004020 conductor Substances 0.000 description 4
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000007261 regionalization Effects 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- JYEUMXHLPRZUAT-UHFFFAOYSA-N 1,2,3-triazine Chemical compound C1=CN=NN=C1 JYEUMXHLPRZUAT-UHFFFAOYSA-N 0.000 description 1
- XQUPVDVFXZDTLT-UHFFFAOYSA-N 1-[4-[[4-(2,5-dioxopyrrol-1-yl)phenyl]methyl]phenyl]pyrrole-2,5-dione Chemical compound O=C1C=CC(=O)N1C(C=C1)=CC=C1CC1=CC=C(N2C(C=CC2=O)=O)C=C1 XQUPVDVFXZDTLT-UHFFFAOYSA-N 0.000 description 1
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229920003192 poly(bis maleimide) Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
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- H—ELECTRICITY
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
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- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/0555—Shape
- H01L2224/05552—Shape in top view
- H01L2224/05554—Shape in top view being square
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/494—Connecting portions
- H01L2224/4943—Connecting portions the connecting portions being staggered
- H01L2224/49433—Connecting portions the connecting portions being staggered outside the semiconductor or solid-state body
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
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- H01L2924/181—Encapsulation
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Wire Bonding (AREA)
Description
(1)従来の半導体素子搭載用基板の絶縁基体の上面に形成されるワイヤボンドパッドは、ボンディングワイヤが放射状に広がる場合、複数個が略長方形状の同一形状からなるので、相隣接するワイヤボンドパッドの端部間が近接して短絡の危険性があり、装置の小型化や、半導体素子の高集積化等の要求に伴うワイヤボンドパッドの配置の高密度化に対応できなくなってきている。
(2)特開2004−134647号公報に示すような、バンプ付き半導体素子を半田等で実装する時に配線との短絡を防止するためにパッドに切り欠きを設けた非円形、又は非正方形とする考え方を半導体素子搭載用基板に応用するのでは、この考え方が回路基板の部分的な短絡防止のためであり、半導体素子搭載用基板を用いた装置の小型化や、半導体素子の高集積化等の要求に伴う半導体素子搭載用基板のワイヤボンドパッドの配置の高密度化には対応できない。
(3)特開平10−12800号公報に示すような、基板側の電極パッド(ワイヤボンドパッド)が半導体素子に近い方の先端部を中間部よりも細幅となった同一形状の多角形状とする電極パッドの半導体素子搭載用基板は、同一形状の電極パッドの隣接間に絶縁間隔を設けようとするのに、切り欠き部を大きくした多角形状の電極パッドとなり、ボンディングワイヤを接続するためのエリアが狭くなるので、ボンディングワイヤの不着が発生する場合がある。
本発明は、このような事情に鑑みてなされたものであって、装置の小型化や、半導体素子の高集積化等の要求に伴うワイヤボンドパッドの配置の高密度化に対応でき、ボンディングワイヤを容易に接続できる半導体素子搭載用基板を提供することを目的とする。
ここに、図1は本発明の一実施の形態に係る半導体素子搭載用基板の説明図、図2は同半導体素子搭載用基板の変形例の説明図である。
Claims (1)
- 絶縁基体に、略四角形の半導体素子の少なくとも一辺側に設けられる複数の第1のワイヤボンドパッドの隣接間ピッチの全体長さを超える隣接間ピッチの全体長さからなる複数の第2のワイヤボンドパッドを有し、前記絶縁基体に前記半導体素子が搭載され、前記第1のワイヤボンドパッドと相対向する前記第2のワイヤボンドパッドのそれぞれの中心部がボンディングワイヤで接続されて電気的に導通状態とされる半導体素子搭載用基板において、
前記第2のワイヤボンドパッドが前記ボンディングワイヤの配設方向と並行する側を長さ方向とする略長方形状からなり、相隣接するそれぞれの前記第2のワイヤボンドパッドにそれぞれの前記ボンディングワイヤの配設に対する中間線に平行、且つそれぞれに等距離の位置を切断線として前記中間線側を削除する切り欠き部を有し、しかも該切り欠き部の長さ方向の大きさが前記第2のワイヤボンドパッドの長さ方向の大きさの1/2以下であることを特徴とする半導体素子搭載用基板。
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JP2006196615A JP2006196615A (ja) | 2006-07-27 |
JP4523425B2 true JP4523425B2 (ja) | 2010-08-11 |
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JP2009283835A (ja) * | 2008-05-26 | 2009-12-03 | Elpida Memory Inc | 半導体装置及びその製造方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5555541A (en) * | 1978-10-20 | 1980-04-23 | Hitachi Ltd | Semiconductor element |
JPH0312448U (ja) * | 1989-06-22 | 1991-02-07 | ||
JPH03274738A (ja) * | 1990-03-23 | 1991-12-05 | Toshiba Corp | 配線基板 |
JPH1012800A (ja) * | 1996-06-19 | 1998-01-16 | Unisia Jecs Corp | 半導体素子の接続装置 |
JP2004134647A (ja) * | 2002-10-11 | 2004-04-30 | Seiko Epson Corp | 回路基板、バンプ付き半導体素子の実装構造、及び電気光学装置、並びに電子機器 |
-
2005
- 2005-01-12 JP JP2005005551A patent/JP4523425B2/ja active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5555541A (en) * | 1978-10-20 | 1980-04-23 | Hitachi Ltd | Semiconductor element |
JPH0312448U (ja) * | 1989-06-22 | 1991-02-07 | ||
JPH03274738A (ja) * | 1990-03-23 | 1991-12-05 | Toshiba Corp | 配線基板 |
JPH1012800A (ja) * | 1996-06-19 | 1998-01-16 | Unisia Jecs Corp | 半導体素子の接続装置 |
JP2004134647A (ja) * | 2002-10-11 | 2004-04-30 | Seiko Epson Corp | 回路基板、バンプ付き半導体素子の実装構造、及び電気光学装置、並びに電子機器 |
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