JP4947156B2 - 弾性波デュプレクサ - Google Patents
弾性波デュプレクサ Download PDFInfo
- Publication number
- JP4947156B2 JP4947156B2 JP2010010279A JP2010010279A JP4947156B2 JP 4947156 B2 JP4947156 B2 JP 4947156B2 JP 2010010279 A JP2010010279 A JP 2010010279A JP 2010010279 A JP2010010279 A JP 2010010279A JP 4947156 B2 JP4947156 B2 JP 4947156B2
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- JP
- Japan
- Prior art keywords
- filter element
- wave filter
- elastic wave
- acoustic wave
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/70—Multiple-port networks for connecting several sources or loads, working on different frequencies or frequency bands, to a common load or source
- H03H9/72—Networks using surface acoustic waves
- H03H9/725—Duplexers
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/0538—Constructional combinations of supports or holders with electromechanical or other electronic elements
- H03H9/0566—Constructional combinations of supports or holders with electromechanical or other electronic elements for duplexers
- H03H9/0571—Constructional combinations of supports or holders with electromechanical or other electronic elements for duplexers including bulk acoustic wave [BAW] devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/0538—Constructional combinations of supports or holders with electromechanical or other electronic elements
- H03H9/0566—Constructional combinations of supports or holders with electromechanical or other electronic elements for duplexers
- H03H9/0576—Constructional combinations of supports or holders with electromechanical or other electronic elements for duplexers including surface acoustic wave [SAW] devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/70—Multiple-port networks for connecting several sources or loads, working on different frequencies or frequency bands, to a common load or source
- H03H9/703—Networks using bulk acoustic wave devices
- H03H9/706—Duplexers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/93—Batch processes
- H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
- H01L2924/1815—Shape
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Description
12 基板
12s 上面(主面)
14 チップ素子(送信用弾性波フィルタ素子、受信用弾性波フィルタ素子)
14s 上面
14t 側面
15a〜15e 封止部
16a,16b 基部
16c,16d 下層(基部)
16e 基部
16s 凹部
16t 底面
16k 上面
18a,18b 低誘電率部
18c,18d 上層(低誘電率部)
18e 低誘電率部
18k,18p 上面
Claims (7)
- 基板と、
前記基板の主面にフリップチップ実装された送信用弾性波フィルタ素子と、
前記基板の前記主面にフリップチップ実装された受信用弾性波フィルタ素子と、
前記基板の前記主面にフリップチップ実装された前記送信用弾性波フィルタ素子及び前記受信用弾性波フィルタ素子を覆うように前記基板の前記主面に設けられ、前記送信用弾性波フィルタ素子及び前記受信用弾性波フィルタ素子を封止する封止部と、
を備え、
前記封止部は、
第1の誘電材料を用いて、前記基板の前記主面に接するように形成された基部と、
前記第1の誘電材料の誘電率よりも低い誘電率を有する第2の誘電材料を用いて、少なくとも、前記封止部のうち前記送信用弾性波フィルタ素子に関して前記基板とは反対側において前記送信用弾性波フィルタ素子に対向する領域と、前記封止部のうち前記受信用弾性波フィルタ素子に関して前記基板とは反対側において前記受信用弾性波フィルタ素子に対向する領域との一方の一部に形成された低誘電率部と、
を含むことを特徴とする弾性波デュプレクサ。 - 前記封止部の前記低誘電率部は、前記送信用弾性波フィルタ素子と前記受信用弾性波フィルタ素子との少なくとも一方との間に間隔を設けて形成され、
前記封止部の前記低誘電率部の厚さは、前記封止部の前記低誘電率部と前記送信用弾性波フィルタ素子との間に延在する前記封止部の厚さと、前記封止部の前記低誘電率部と前記受信用弾性波フィルタ素子との間に延在する前記封止部の厚さとの少なくとも一方よりも大きいことを特徴とする、請求項1に記載の弾性波フィルタ素子。 - 前記封止部の前記低誘電率部は、前記送信用弾性波フィルタ素子の前記基板とは反対側の部分と、前記受信用弾性波フィルタ素子の前記基板とは反対側の部分との少なくとも一方に接することを特徴とする、請求項1に記載の弾性波フィルタ素子。
- 前記第1の誘電材料と前記第2の誘電材料の少なくとも一方が樹脂であることを特徴とする、請求項1乃至請求項3のいずれか一つに記載の弾性波デュプレクサ。
- 前記送信用弾性波フィルタ素子と前記受信用弾性波フィルタ素子とは、それぞれ別個のチップ素子に形成されることを特徴とする、請求項1乃至請求項4のいずれか一つに記載の弾性波デュプレクサ。
- 前記送信用弾性波フィルタ素子と前記受信用弾性波フィルタ素子とが同一のチップ素子に形成されることを特徴とする、請求項1乃至請求項4のいずれか一つに記載の弾性波デュプレクサ。
- 前記受信用弾性波フィルタ素子がバランス素子であることを特徴とする、請求項1乃至請求項6のいずれか一つに記載の弾性波デュプレクサ。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010010279A JP4947156B2 (ja) | 2010-01-20 | 2010-01-20 | 弾性波デュプレクサ |
US12/987,214 US8536958B2 (en) | 2010-01-20 | 2011-01-10 | Elastic wave duplexer having a sealing member including two dielectric materials |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010010279A JP4947156B2 (ja) | 2010-01-20 | 2010-01-20 | 弾性波デュプレクサ |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2011151552A JP2011151552A (ja) | 2011-08-04 |
JP4947156B2 true JP4947156B2 (ja) | 2012-06-06 |
Family
ID=44277205
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010010279A Active JP4947156B2 (ja) | 2010-01-20 | 2010-01-20 | 弾性波デュプレクサ |
Country Status (2)
Country | Link |
---|---|
US (1) | US8536958B2 (ja) |
JP (1) | JP4947156B2 (ja) |
Family Cites Families (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH066175A (ja) * | 1992-06-19 | 1994-01-14 | Murata Mfg Co Ltd | 圧電部品 |
JP2802296B2 (ja) * | 1994-05-31 | 1998-09-24 | セイコープレシジョン株式会社 | 水晶発振回路の製造方法 |
JPH09199983A (ja) * | 1996-01-12 | 1997-07-31 | Canon Inc | 弾性表面波装置及びこれを用いた受信装置と通信システム |
JP3982876B2 (ja) * | 1997-06-30 | 2007-09-26 | 沖電気工業株式会社 | 弾性表面波装置 |
JP3514361B2 (ja) * | 1998-02-27 | 2004-03-31 | Tdk株式会社 | チップ素子及びチップ素子の製造方法 |
JP4567986B2 (ja) | 2000-03-17 | 2010-10-27 | パナソニック株式会社 | 電気素子内蔵モジュール及びその製造方法 |
CN1551720A (zh) * | 2000-06-27 | 2004-12-01 | ���µ�����ҵ��ʽ���� | 陶瓷叠层器件 |
JP3376994B2 (ja) * | 2000-06-27 | 2003-02-17 | 株式会社村田製作所 | 弾性表面波装置及びその製造方法 |
JP2002111218A (ja) * | 2000-06-27 | 2002-04-12 | Matsushita Electric Ind Co Ltd | セラミック積層デバイス |
KR100491218B1 (ko) * | 2000-07-06 | 2005-05-25 | 가부시끼가이샤 도시바 | 탄성표면파장치 및 그 제조방법 |
JP4145476B2 (ja) | 2000-09-25 | 2008-09-03 | Tdk株式会社 | 弾性表面波装置の製造方法 |
JP2003087095A (ja) | 2001-07-02 | 2003-03-20 | Toshiba Corp | 弾性表面波装置 |
JP2003258162A (ja) * | 2002-02-27 | 2003-09-12 | Toshiba Corp | 1次,2次実装体 |
JP2003297982A (ja) * | 2002-04-01 | 2003-10-17 | Nec Compound Semiconductor Devices Ltd | 高周波電子デバイスとその製造方法 |
DE10239317A1 (de) * | 2002-08-27 | 2004-03-11 | Epcos Ag | Resonator und Bauelement mit hermetischer Verkapselung |
JP4353187B2 (ja) * | 2003-05-14 | 2009-10-28 | 株式会社村田製作所 | 弾性表面波分波器 |
JP4375037B2 (ja) * | 2004-02-05 | 2009-12-02 | パナソニック株式会社 | 弾性表面波素子 |
JP4458954B2 (ja) * | 2004-06-28 | 2010-04-28 | 京セラ株式会社 | 弾性表面波装置およびその製造方法ならびに通信装置 |
JP4587732B2 (ja) * | 2004-07-28 | 2010-11-24 | 京セラ株式会社 | 弾性表面波装置 |
JP4645233B2 (ja) * | 2005-03-03 | 2011-03-09 | パナソニック株式会社 | 弾性表面波装置 |
JP2006279604A (ja) * | 2005-03-29 | 2006-10-12 | Tdk Corp | 弾性表面波装置 |
FR2890490A1 (fr) * | 2005-09-05 | 2007-03-09 | St Microelectronics Sa | Support de resonateur acoustique et circuit integre correspondant |
WO2007148510A1 (ja) * | 2006-06-21 | 2007-12-27 | Murata Manufacturing Co., Ltd. | 弾性波フィルタ装置及びデュプレクサ |
EP2131493A4 (en) * | 2007-05-29 | 2011-07-20 | Murata Manufacturing Co | ACOUSTIC WAVE DISCHARGE FILTER |
WO2009057195A1 (ja) * | 2007-10-30 | 2009-05-07 | Fujitsu Limited | 弾性波素子、デュープレクサ、通信モジュール、および通信装置 |
JP5029704B2 (ja) * | 2010-01-20 | 2012-09-19 | 株式会社村田製作所 | 弾性波デュプレクサ |
-
2010
- 2010-01-20 JP JP2010010279A patent/JP4947156B2/ja active Active
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2011
- 2011-01-10 US US12/987,214 patent/US8536958B2/en active Active
Also Published As
Publication number | Publication date |
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JP2011151552A (ja) | 2011-08-04 |
US20110175688A1 (en) | 2011-07-21 |
US8536958B2 (en) | 2013-09-17 |
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