JP4587732B2 - 弾性表面波装置 - Google Patents
弾性表面波装置 Download PDFInfo
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- JP4587732B2 JP4587732B2 JP2004220060A JP2004220060A JP4587732B2 JP 4587732 B2 JP4587732 B2 JP 4587732B2 JP 2004220060 A JP2004220060 A JP 2004220060A JP 2004220060 A JP2004220060 A JP 2004220060A JP 4587732 B2 JP4587732 B2 JP 4587732B2
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- 238000010897 surface acoustic wave method Methods 0.000 title claims description 152
- 239000000758 substrate Substances 0.000 claims description 239
- 239000004020 conductor Substances 0.000 claims description 65
- 230000005284 excitation Effects 0.000 claims description 60
- 239000010410 layer Substances 0.000 claims description 44
- 239000000463 material Substances 0.000 claims description 36
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 18
- 239000010453 quartz Substances 0.000 claims description 14
- 239000011347 resin Substances 0.000 claims description 14
- 229920005989 resin Polymers 0.000 claims description 14
- 239000012790 adhesive layer Substances 0.000 claims description 11
- 238000007789 sealing Methods 0.000 claims description 8
- 238000002955 isolation Methods 0.000 description 65
- 230000003071 parasitic effect Effects 0.000 description 28
- 230000006866 deterioration Effects 0.000 description 24
- 238000000034 method Methods 0.000 description 20
- 230000005540 biological transmission Effects 0.000 description 18
- 238000010586 diagram Methods 0.000 description 14
- 230000015556 catabolic process Effects 0.000 description 10
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 description 9
- 239000013078 crystal Substances 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 8
- 230000008859 change Effects 0.000 description 7
- 230000000694 effects Effects 0.000 description 7
- 239000010931 gold Substances 0.000 description 7
- 239000010980 sapphire Substances 0.000 description 7
- 229910052594 sapphire Inorganic materials 0.000 description 7
- 239000000919 ceramic Substances 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 6
- 229910052737 gold Inorganic materials 0.000 description 6
- 230000001681 protective effect Effects 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 238000004544 sputter deposition Methods 0.000 description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 229910000679 solder Inorganic materials 0.000 description 5
- 239000011651 chromium Substances 0.000 description 4
- 238000004891 communication Methods 0.000 description 4
- 230000006378 damage Effects 0.000 description 4
- 238000005566 electron beam evaporation Methods 0.000 description 4
- 238000001020 plasma etching Methods 0.000 description 4
- 230000005616 pyroelectricity Effects 0.000 description 4
- 238000004088 simulation Methods 0.000 description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 238000005219 brazing Methods 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 239000000945 filler Substances 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 210000004127 vitreous body Anatomy 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 229910001020 Au alloy Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 229920000106 Liquid crystal polymer Polymers 0.000 description 1
- 239000004977 Liquid-crystal polymers (LCPs) Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910001362 Ta alloys Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000006061 abrasive grain Substances 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- PSHMSSXLYVAENJ-UHFFFAOYSA-N dilithium;[oxido(oxoboranyloxy)boranyl]oxy-oxoboranyloxyborinate Chemical compound [Li+].[Li+].O=BOB([O-])OB([O-])OB=O PSHMSSXLYVAENJ-UHFFFAOYSA-N 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000002241 glass-ceramic Substances 0.000 description 1
- 239000003353 gold alloy Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 238000003698 laser cutting Methods 0.000 description 1
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 230000003014 reinforcing effect Effects 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/10—Mounting in enclosures
- H03H9/1064—Mounting in enclosures for surface acoustic wave [SAW] devices
- H03H9/1085—Mounting in enclosures for surface acoustic wave [SAW] devices the enclosure being defined by a non-uniform sealing mass covering the non-active sides of the BAW device
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02543—Characteristics of substrate, e.g. cutting angles
- H03H9/02574—Characteristics of substrate, e.g. cutting angles of combined substrates, multilayered substrates, piezoelectrical layers on not-piezoelectrical substrate
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02614—Treatment of substrates, e.g. curved, spherical, cylindrical substrates ensuring closed round-about circuits for the acoustical waves
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02818—Means for compensation or elimination of undesirable effects
- H03H9/02952—Means for compensation or elimination of undesirable effects of parasitic capacitance
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02984—Protection measures against damaging
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/0538—Constructional combinations of supports or holders with electromechanical or other electronic elements
- H03H9/0566—Constructional combinations of supports or holders with electromechanical or other electronic elements for duplexers
- H03H9/0576—Constructional combinations of supports or holders with electromechanical or other electronic elements for duplexers including surface acoustic wave [SAW] devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/058—Holders; Supports for surface acoustic wave devices
- H03H9/059—Holders; Supports for surface acoustic wave devices consisting of mounting pads or bumps
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/10—Mounting in enclosures
- H03H9/1064—Mounting in enclosures for surface acoustic wave [SAW] devices
- H03H9/1092—Mounting in enclosures for surface acoustic wave [SAW] devices the enclosure being defined by a cover cap mounted on an element forming part of the surface acoustic wave [SAW] device on the side of the IDT's
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/70—Multiple-port networks for connecting several sources or loads, working on different frequencies or frequency bands, to a common load or source
- H03H9/72—Networks using surface acoustic waves
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/70—Multiple-port networks for connecting several sources or loads, working on different frequencies or frequency bands, to a common load or source
- H03H9/72—Networks using surface acoustic waves
- H03H9/725—Duplexers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Description
本発明の弾性表面波装置に使用される弾性表面波素子の実施の形態の例1における弾性表面波素子の一方主面を示す上面図は、図5と同様である。また、この例1における弾性表面波素子の断面図を図1に示す。また、この例1の弾性表面波素子を実装した弾性表面波装置の断面図を図2に示す。
図3に本発明の弾性表面波装置に使用される弾性表面波素子の実施の形態の例2における弾性表面波素子の断面図を示す。この例2の弾性表面波素子1’では、圧電体からなる第1の基板2の一方主面に励振電極3が形成され、第1の基板2の他方主面に第1の基板2より比誘電率が小さい材料からなる第2の基板21の一方主面が接着層23を介して接合され、第2の基板21の他方主面の全面に導体層22が形成されている。接着層23としてダイボンド材の役割をする材料としては、ホウケイ酸ガラス,石英ガラスやガラスセラミックス等から成るガラス質体や、有機物または有機物を含む接着剤を用いることができる。接着層23による第1の基板2と第2の基板21との接合状態を良好に保つためには、接着した後、熱処理を加えてもよい。
図4に本発明の弾性表面波装置に使用される弾性表面波素子の実施の形態の例3における弾性表面波素子の断面図を示す。この例3の弾性表面波素子1”では、圧電体からなる第1の基板2’の一方主面に励振電極3が形成され、第1の基板2’の他方主面に第1の基板2’より比誘電率が小さい材料からなる第2の基板21の一方主面が例2と同様に接着層23を介して接合され、第2の基板21の他方主面の全面に導体層22が形成されている。また、第1の基板2の他方主面が一方主面より粗面であるものとしている。第1の基板2’の他方主面を一方主面より粗面であるものとするには、例えば砥粒を用いて他方主面を研磨することにより所望の粗面化を実現することができる。
2,2’:第1の基板
3:励振電極
4:接続電極
5:送信側フィルタの入力パッド部
6:送信側フィルタの出力パッド部
7:受信側フィルタの入力パッド部
8:受信側フィルタの出力パッド部
9:接地電極
10:環状導体
11:接地電極パッド
12:送信側フィルタ領域
13:受信側フィルタ領域
14:弾性表面波の漏れ
21:第2の基板
22:導体層
23:接着層
30:保護膜
31:実装用基体
32:基体側環状導体
33:ろう材
34:封止樹脂
Claims (3)
- 圧電体からなる第1の基板の一方主面にそれぞれ励振電極と入力パッド部と出力パッド部とを具備する送信側フィルタ領域および受信側フィルタ領域が形成されているとともに、前記第1の基板の他方主面に前記第1の基板より比誘電率が小さい材料からなる第2の基板の一方主面が接合され、前記第2の基板の他方主面の全面に他の電極と接続されない導体層が形成されている弾性表面波素子と、
上面を有し、該上面に前記第1の基板の一方主面が対面するようにして前記弾性表面波素子がフリップチップ実装される平板状の実装用基体と、
前記弾性表面波素子を被覆する封止樹脂と、
を備え、
前記第1の基板がLiTaO3からなり、前記第2の基板が石英からなり、前記第1の基板の厚みと前記第2の基板の厚みが等しくされている弾性表面波装置。 - 前記第2の基板は接着層を介して前記第1の基板に接合されていることを特徴とする請求項1記載の弾性表面波装置。
- 前記第1の基板の前記他方主面が前記第1の基板の前記一方主面より粗面であることを特徴とする請求項2記載の弾性表面波装置。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004220060A JP4587732B2 (ja) | 2004-07-28 | 2004-07-28 | 弾性表面波装置 |
US11/190,515 US7609129B2 (en) | 2004-07-28 | 2005-07-27 | Surface acoustic wave device, surface acoustic wave apparatus, and communications equipment |
CNB2005100879325A CN100539413C (zh) | 2004-07-28 | 2005-07-27 | 弹性表面波元件、弹性表面波装置以及通信装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004220060A JP4587732B2 (ja) | 2004-07-28 | 2004-07-28 | 弾性表面波装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006042008A JP2006042008A (ja) | 2006-02-09 |
JP4587732B2 true JP4587732B2 (ja) | 2010-11-24 |
Family
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Application Number | Title | Priority Date | Filing Date |
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JP2004220060A Expired - Fee Related JP4587732B2 (ja) | 2004-07-28 | 2004-07-28 | 弾性表面波装置 |
Country Status (3)
Country | Link |
---|---|
US (1) | US7609129B2 (ja) |
JP (1) | JP4587732B2 (ja) |
CN (1) | CN100539413C (ja) |
Families Citing this family (52)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102005055870A1 (de) * | 2005-11-23 | 2007-05-24 | Epcos Ag | Elektroakustisches Bauelement |
KR100979952B1 (ko) * | 2006-02-16 | 2010-09-03 | 파나소닉 주식회사 | 탄성 표면파 디바이스, 및 이를 이용한 탄성 표면파 필터와 안테나 공용기, 및 이를 이용한 전자 기기 |
TWI325687B (en) * | 2006-02-23 | 2010-06-01 | Murata Manufacturing Co | Boundary acoustic wave device and method for producing the same |
JP4718352B2 (ja) * | 2006-03-20 | 2011-07-06 | 京セラ株式会社 | 弾性表面波装置および弾性表面波装置の製造方法 |
JP4535286B2 (ja) * | 2006-03-31 | 2010-09-01 | Tdk株式会社 | 弾性表面波素子および当該素子を備えた弾性表面波装置 |
JP4992908B2 (ja) * | 2006-11-13 | 2012-08-08 | 株式会社村田製作所 | 弾性境界波素子、弾性境界波装置及び弾性境界波装置の製造方法 |
JP2008131152A (ja) | 2006-11-17 | 2008-06-05 | Fujitsu Media Device Kk | 弾性表面波デバイス |
JP4316632B2 (ja) * | 2007-04-16 | 2009-08-19 | 富士通メディアデバイス株式会社 | 弾性表面波装置及び分波器 |
DE102007037502B4 (de) * | 2007-08-08 | 2014-04-03 | Epcos Ag | Bauelement mit reduziertem Temperaturgang |
US7911111B2 (en) | 2008-04-15 | 2011-03-22 | Ngk Insulators, Ltd. | Surface acoustic wave devices |
US8115365B2 (en) | 2008-04-15 | 2012-02-14 | Ngk Insulators, Ltd. | Surface acoustic wave devices |
JP4956569B2 (ja) | 2008-04-15 | 2012-06-20 | 日本碍子株式会社 | 弾性表面波素子 |
CN102057571B (zh) * | 2008-06-06 | 2014-03-19 | 松下电器产业株式会社 | 弹性波双工器 |
JP4594415B2 (ja) * | 2008-07-09 | 2010-12-08 | 日本電波工業株式会社 | デュプレクサ |
WO2010007805A1 (ja) * | 2008-07-17 | 2010-01-21 | 株式会社 村田製作所 | 分波器 |
JP4760884B2 (ja) * | 2008-09-26 | 2011-08-31 | セイコーエプソン株式会社 | 水晶振動子パッケージ、電子部品の実装構造体、及び電子部品の製造方法 |
JP5234780B2 (ja) * | 2008-12-24 | 2013-07-10 | 日本碍子株式会社 | 複合基板の製造方法及び複合基板 |
JP2010187373A (ja) | 2009-01-19 | 2010-08-26 | Ngk Insulators Ltd | 複合基板及びそれを用いた弾性波デバイス |
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CN100539413C (zh) | 2009-09-09 |
US7609129B2 (en) | 2009-10-27 |
CN1728550A (zh) | 2006-02-01 |
US20060022768A1 (en) | 2006-02-02 |
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