JP4944399B2 - 固体撮像装置 - Google Patents

固体撮像装置 Download PDF

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Publication number
JP4944399B2
JP4944399B2 JP2005195281A JP2005195281A JP4944399B2 JP 4944399 B2 JP4944399 B2 JP 4944399B2 JP 2005195281 A JP2005195281 A JP 2005195281A JP 2005195281 A JP2005195281 A JP 2005195281A JP 4944399 B2 JP4944399 B2 JP 4944399B2
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Japan
Prior art keywords
layer
wiring layer
optical black
solid
state imaging
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Expired - Fee Related
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JP2005195281A
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English (en)
Japanese (ja)
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JP2007013061A5 (enExample
JP2007013061A (ja
Inventor
智之 野田
優也 藤野
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Canon Inc
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Canon Inc
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Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2005195281A priority Critical patent/JP4944399B2/ja
Priority to US11/477,418 priority patent/US7382011B2/en
Publication of JP2007013061A publication Critical patent/JP2007013061A/ja
Priority to US12/105,354 priority patent/US7679117B2/en
Publication of JP2007013061A5 publication Critical patent/JP2007013061A5/ja
Application granted granted Critical
Publication of JP4944399B2 publication Critical patent/JP4944399B2/ja
Anticipated expiration legal-status Critical
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/026—Wafer-level processing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP2005195281A 2005-07-04 2005-07-04 固体撮像装置 Expired - Fee Related JP4944399B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2005195281A JP4944399B2 (ja) 2005-07-04 2005-07-04 固体撮像装置
US11/477,418 US7382011B2 (en) 2005-07-04 2006-06-30 Solid-state image sensing device equipped with inner lens
US12/105,354 US7679117B2 (en) 2005-07-04 2008-04-18 Solid-state image sensing device equipped with inner lens

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005195281A JP4944399B2 (ja) 2005-07-04 2005-07-04 固体撮像装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2011107623A Division JP5425138B2 (ja) 2011-05-12 2011-05-12 固体撮像装置の製造方法

Publications (3)

Publication Number Publication Date
JP2007013061A JP2007013061A (ja) 2007-01-18
JP2007013061A5 JP2007013061A5 (enExample) 2008-08-14
JP4944399B2 true JP4944399B2 (ja) 2012-05-30

Family

ID=37588436

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005195281A Expired - Fee Related JP4944399B2 (ja) 2005-07-04 2005-07-04 固体撮像装置

Country Status (2)

Country Link
US (2) US7382011B2 (enExample)
JP (1) JP4944399B2 (enExample)

Families Citing this family (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1788797B1 (en) * 2005-11-18 2013-06-26 Canon Kabushiki Kaisha Solid-state image pickup device
KR101176545B1 (ko) * 2006-07-26 2012-08-28 삼성전자주식회사 마이크로 렌즈의 형성방법과 마이크로 렌즈를 포함한이미지 센서 및 그의 제조방법
JP4315457B2 (ja) * 2006-08-31 2009-08-19 キヤノン株式会社 光電変換装置及び撮像システム
KR100780246B1 (ko) * 2006-09-26 2007-11-27 동부일렉트로닉스 주식회사 이미지 센서 제조방법
KR100835439B1 (ko) * 2006-12-28 2008-06-04 동부일렉트로닉스 주식회사 이미지 센서 및 그의 제조방법
KR100825805B1 (ko) * 2007-02-13 2008-04-29 삼성전자주식회사 이미지 센서 소자 및 그 센서 소자의 제조방법
JP5159120B2 (ja) * 2007-02-23 2013-03-06 キヤノン株式会社 光電変換装置およびその製造方法
JP4799522B2 (ja) * 2007-10-12 2011-10-26 株式会社東芝 撮像装置
JP4548519B2 (ja) * 2007-10-16 2010-09-22 セイコーエプソン株式会社 光源装置
US8482639B2 (en) * 2008-02-08 2013-07-09 Omnivision Technologies, Inc. Black reference pixel for backside illuminated image sensor
JP5288823B2 (ja) 2008-02-18 2013-09-11 キヤノン株式会社 光電変換装置、及び光電変換装置の製造方法
JP5371463B2 (ja) 2008-02-28 2013-12-18 キヤノン株式会社 撮像装置、撮像システム、および、撮像装置の制御方法
JP5357441B2 (ja) * 2008-04-04 2013-12-04 キヤノン株式会社 固体撮像装置の製造方法
US8003425B2 (en) * 2008-05-14 2011-08-23 International Business Machines Corporation Methods for forming anti-reflection structures for CMOS image sensors
US7759755B2 (en) 2008-05-14 2010-07-20 International Business Machines Corporation Anti-reflection structures for CMOS image sensors
JP2009283503A (ja) * 2008-05-19 2009-12-03 Panasonic Corp 半導体装置及びその製造方法
JP5383124B2 (ja) * 2008-09-05 2014-01-08 キヤノン株式会社 固体撮像装置およびその製造方法
KR101057653B1 (ko) * 2008-11-07 2011-08-18 주식회사 동부하이텍 이미지 센서 및 그 제조 방법
JP5203913B2 (ja) * 2008-12-15 2013-06-05 キヤノン株式会社 光電変換装置、撮像システム、及び光電変換装置の駆動方法
JP2010177391A (ja) * 2009-01-29 2010-08-12 Sony Corp 固体撮像装置、電子機器、固体撮像装置の製造方法
JP5438374B2 (ja) * 2009-05-12 2014-03-12 キヤノン株式会社 固体撮像装置
US8233066B2 (en) 2010-02-18 2012-07-31 Omnivision Technologies, Inc. Image sensor with improved black level calibration
US8338856B2 (en) 2010-08-10 2012-12-25 Omnivision Technologies, Inc. Backside illuminated image sensor with stressed film
US20120261731A1 (en) * 2011-04-12 2012-10-18 Cheng-Hung Yu Image sensor
JP6071183B2 (ja) 2011-10-20 2017-02-01 キヤノン株式会社 固体撮像装置およびカメラ
US9236521B2 (en) * 2012-10-30 2016-01-12 Avago Technologies General Ip (Singapore) Pte. Ltd. Optocoupler having lens layer
US11335721B2 (en) 2013-11-06 2022-05-17 Taiwan Semiconductor Manufacturing Co., Ltd. Backside illuminated image sensor device with shielding layer
JP2016001633A (ja) * 2014-06-11 2016-01-07 ソニー株式会社 固体撮像素子、および電子装置
US10249661B2 (en) * 2014-08-22 2019-04-02 Visera Technologies Company Limited Imaging devices with dummy patterns
CN104465687B (zh) * 2014-12-09 2018-01-05 上海集成电路研发中心有限公司 一种cmos图像传感器像素单元阵列
US10297629B2 (en) * 2017-09-11 2019-05-21 Semiconductor Components Industries, Llc Image sensors with in-pixel lens arrays
US10283543B2 (en) 2017-09-28 2019-05-07 Semiconductor Components Industries, Llc Image sensors with diffractive lenses
US10312280B2 (en) 2017-09-28 2019-06-04 Semiconductor Components Industries, Llc Image sensors with diffractive lenses for stray light control
TWI646678B (zh) * 2017-12-07 2019-01-01 晶相光電股份有限公司 影像感測裝置
US10483309B1 (en) 2018-09-07 2019-11-19 Semiductor Components Industries, Llc Image sensors with multipart diffractive lenses
US10957727B2 (en) 2018-09-26 2021-03-23 Semiconductor Components Industries, Llc Phase detection pixels with diffractive lenses
US11244978B2 (en) 2018-10-17 2022-02-08 Canon Kabushiki Kaisha Photoelectric conversion apparatus and equipment including the same
JP2020145397A (ja) * 2018-10-17 2020-09-10 キヤノン株式会社 光電変換装置、および、それを含む機器
US11121160B2 (en) 2018-10-17 2021-09-14 Canon Kabushiki Kaisha Photoelectric conversion apparatus and equipment comprising a light shielding part in a light receiving region and a light shielding film in a light shielded region

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2910161B2 (ja) * 1990-05-31 1999-06-23 ソニー株式会社 固体撮像素子
JPH0837287A (ja) * 1994-07-23 1996-02-06 Sony Corp 固体撮像素子とその製造方法
JP2001127275A (ja) * 1999-10-26 2001-05-11 Sony Corp 固体撮像装置
JP3495979B2 (ja) * 2000-10-17 2004-02-09 キヤノン株式会社 固体撮像素子及び撮像装置
JP4774649B2 (ja) * 2001-08-03 2011-09-14 ソニー株式会社 固体撮像素子およびその製造方法
JP2003204050A (ja) * 2002-01-08 2003-07-18 Canon Inc 固体撮像装置
JP4383959B2 (ja) * 2003-05-28 2009-12-16 キヤノン株式会社 光電変換装置およびその製造方法
JP4412710B2 (ja) 2003-11-25 2010-02-10 キヤノン株式会社 光電変換装置の設計方法
US7443005B2 (en) * 2004-06-10 2008-10-28 Tiawan Semiconductor Manufacturing Co., Ltd. Lens structures suitable for use in image sensors and method for making the same
JP4466213B2 (ja) * 2004-06-14 2010-05-26 ソニー株式会社 固体撮像装置の製造方法
JP4668040B2 (ja) * 2005-11-18 2011-04-13 富士フイルム株式会社 動画生成装置、動画生成方法、及びプログラム
EP1788797B1 (en) 2005-11-18 2013-06-26 Canon Kabushiki Kaisha Solid-state image pickup device

Also Published As

Publication number Publication date
JP2007013061A (ja) 2007-01-18
US20080191301A1 (en) 2008-08-14
US7382011B2 (en) 2008-06-03
US20070001252A1 (en) 2007-01-04
US7679117B2 (en) 2010-03-16

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