JP4412710B2 - 光電変換装置の設計方法 - Google Patents
光電変換装置の設計方法 Download PDFInfo
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- JP4412710B2 JP4412710B2 JP2003393978A JP2003393978A JP4412710B2 JP 4412710 B2 JP4412710 B2 JP 4412710B2 JP 2003393978 A JP2003393978 A JP 2003393978A JP 2003393978 A JP2003393978 A JP 2003393978A JP 4412710 B2 JP4412710 B2 JP 4412710B2
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- 238000000034 method Methods 0.000 title claims description 46
- 238000006243 chemical reaction Methods 0.000 title claims description 32
- 230000003595 spectral effect Effects 0.000 claims description 63
- 238000013461 design Methods 0.000 claims description 38
- 238000002834 transmittance Methods 0.000 claims description 21
- 230000008859 change Effects 0.000 claims description 17
- 230000003247 decreasing effect Effects 0.000 claims description 2
- 238000003384 imaging method Methods 0.000 description 21
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 18
- 229910052814 silicon oxide Inorganic materials 0.000 description 18
- 239000010410 layer Substances 0.000 description 17
- 229910052581 Si3N4 Inorganic materials 0.000 description 11
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 11
- 238000010586 diagram Methods 0.000 description 7
- 239000011229 interlayer Substances 0.000 description 7
- 239000000758 substrate Substances 0.000 description 7
- 229910004298 SiO 2 Inorganic materials 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 238000012545 processing Methods 0.000 description 5
- 238000012546 transfer Methods 0.000 description 5
- 238000001514 detection method Methods 0.000 description 4
- 230000035945 sensitivity Effects 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- 230000009471 action Effects 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 241000519995 Stachys sylvatica Species 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000005375 photometry Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14621—Colour filter arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02162—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14627—Microlenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Light Receiving Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Description
前記反射防止膜の膜厚を第1の膜厚から第2の膜厚へ変化させた場合に、
最も短波長の光を透過するカラーフィルタの分光特性のピーク波長における分光透過率と、最も長波長の光を透過するカラーフィルタの分光特性のピーク波長における分光透過率とが増大方向もしくは減少方向のうち同一の方向に変化するように、前記反射防止膜の膜厚範囲を設計することを特徴とする。
(実施例1)
本発明の設計方法に基づき、図1の光電変換装置の絶縁膜をシリコン酸化膜で8nm形成し、反射防止膜をシリコン窒化膜で30nm形成した後、配線層を形成し、レッド、グリーン、ブルーのカラーフィルタ層を形成した光電変換装置を作製した。本実施例では反射防止膜にばらつきを持たせて作製した。図5に本実施例の分光特性を示す。101は反射防止膜が設計値(30nm)の時の分光特性である。102は、ばらつきで反射防止膜が10%厚くなった(33nm)場合の分光特性である。103は、ばらつきで反射防止膜が10%薄くなった場合(27nm)の分光特性である。104はブルーカラーフィルタの分光特性、105はグリーンカラーフィルタの分光特性、106は赤外カットフィルタを透過した後のレッドカラーフィルタの分光特性である。それぞれのフィルタのピーク波長は、ブルーは450nm、グリーンは550nm、レッドは630nmである。
本発明の設計方法に基づき、図1の光電変換装置の絶縁膜をシリコン酸化膜で8nm形成し、反射防止膜をシリコン窒化膜で30nm形成した後、配線層を形成し、レッド、グリーン、ブルーのカラーフィルタ層を形成した光電変換装置を作製した。本実施例では絶縁膜にばらつきを持たせて作製した。図6に本実施例の分光特性を示す。201は絶縁膜が設計値の時(8nm)の分光特性である。202は、ばらつきで絶縁膜が10%厚くなった場合の分光特性である。203は、ばらつきで絶縁膜が10%薄くなった場合の分光特性である。204はブルーカラーフィルタの分光特性、205はグリーンカラーフィルタの分光特性、206は赤外カットフィルタ透過後のレッドカラーフィルタの分光特性である。それぞれのフィルタのピーク波長は、ブルーは450nm、グリーンは550nm、レッドは630nmである。
本発明の設計方法に基づき、図1の光電変換装置の絶縁膜をシリコン酸化膜(n=1.66)で8nm形成し、反射防止膜をシリコン酸窒化膜で50nm形成した後、配線層を形成し、レッド、グリーン、ブルーのカラーフィルタ層を形成した光電変換装置を作製した。本実施例では反射防止膜、絶縁膜にばらつきを持たせて作製した。図7に本実施例の分光特性を示す。301は反射防止膜が設計値の時の分光特性である。302は、ばらつきで反射防止膜、絶縁膜がそれぞれ10%厚くなった場合の分光特性である。303は、ばらつきで反射防止膜、絶縁膜がそれぞれ10%薄くなった場合の分光特性である。304はブルーカラーフィルタの分光特性、305はグリーンカラーフィルタの分光特性、306はレッドカラーフィルタの分光特性である。それぞれのフィルタのピーク波長は、ブルーは450nm、グリーンは550nm、レッドは630nmである。
そのデータを基に露出の演算を全体制御・演算部9で行う。
33 AL配線層
31 層間膜(SiO2)
34 AL配線層
32、層間膜(SiO2)
35 平坦化層
36 カラーフィルタ(CF)層
37 平坦化層
38 マイクロレンズ
40 p型シリコン基板
43 受光部
44a 検出部
41 絶縁膜
42 転送ゲート電極
45a 反射防止膜
46a 絶縁膜
44b 電界緩和領域
45b、46b ゲート電極の側部絶縁膜
Claims (2)
- 複数の受光部と、前記受光部上に設けられた反射防止膜と、前記反射防止膜上に設けられた複数色のカラーフィルタ層とを有する光電変換装置の設計方法において、
前記反射防止膜の膜厚を第1の膜厚から第2の膜厚へ変化させた場合に、
最も短波長の光を透過するカラーフィルタの分光特性のピーク波長における分光透過率と、最も長波長の光を透過するカラーフィルタの分光特性のピーク波長における分光透過率とが増大方向もしくは減少方向のうち同一の方向に変化するように、前記反射防止膜の膜厚範囲を設計することを特徴とする光電変換装置の設計方法。 - 前記最も短波長の光を透過するカラーフィルタはブルーのカラーフィルタであり、前記最も長波長の光を透過するカラーフィルタはレッドのカラーフィルタであることを特徴とする請求項1に記載の光電変換装置の設計方法。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003393978A JP4412710B2 (ja) | 2003-11-25 | 2003-11-25 | 光電変換装置の設計方法 |
US10/986,945 US7518096B2 (en) | 2003-11-25 | 2004-11-15 | Method of designing photoelectric conversion apparatus with carefully set antireflective film thickness |
US12/397,751 US7985947B2 (en) | 2003-11-25 | 2009-03-04 | Photoelectric conversion apparatus and image pickup system using photoelectric conversion apparatus |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003393978A JP4412710B2 (ja) | 2003-11-25 | 2003-11-25 | 光電変換装置の設計方法 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2005158940A JP2005158940A (ja) | 2005-06-16 |
JP2005158940A5 JP2005158940A5 (ja) | 2007-01-18 |
JP4412710B2 true JP4412710B2 (ja) | 2010-02-10 |
Family
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Family Applications (1)
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JP2003393978A Expired - Fee Related JP4412710B2 (ja) | 2003-11-25 | 2003-11-25 | 光電変換装置の設計方法 |
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US (2) | US7518096B2 (ja) |
JP (1) | JP4412710B2 (ja) |
Families Citing this family (21)
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KR100753391B1 (ko) * | 2004-05-14 | 2007-08-30 | 매그나칩 반도체 유한회사 | 씨모스 이미지센서 |
JP4944399B2 (ja) * | 2005-07-04 | 2012-05-30 | キヤノン株式会社 | 固体撮像装置 |
US8274715B2 (en) | 2005-07-28 | 2012-09-25 | Omnivision Technologies, Inc. | Processing color and panchromatic pixels |
US8139130B2 (en) | 2005-07-28 | 2012-03-20 | Omnivision Technologies, Inc. | Image sensor with improved light sensitivity |
EP1788797B1 (en) * | 2005-11-18 | 2013-06-26 | Canon Kabushiki Kaisha | Solid-state image pickup device |
US7916362B2 (en) | 2006-05-22 | 2011-03-29 | Eastman Kodak Company | Image sensor with improved light sensitivity |
US8031258B2 (en) | 2006-10-04 | 2011-10-04 | Omnivision Technologies, Inc. | Providing multiple video signals from single sensor |
US8896712B2 (en) * | 2007-07-20 | 2014-11-25 | Omnivision Technologies, Inc. | Determining and correcting for imaging device motion during an exposure |
JP4548519B2 (ja) * | 2007-10-16 | 2010-09-22 | セイコーエプソン株式会社 | 光源装置 |
US7924504B2 (en) * | 2008-01-01 | 2011-04-12 | United Microelectronics Corp. | Color filter structure having inorganic layers |
JP5371463B2 (ja) | 2008-02-28 | 2013-12-18 | キヤノン株式会社 | 撮像装置、撮像システム、および、撮像装置の制御方法 |
JP5314914B2 (ja) * | 2008-04-04 | 2013-10-16 | キヤノン株式会社 | 光電変換装置、撮像システム、設計方法、及び光電変換装置の製造方法 |
US8350952B2 (en) * | 2008-06-04 | 2013-01-08 | Omnivision Technologies, Inc. | Image sensors with improved angle response |
US7915067B2 (en) * | 2008-07-09 | 2011-03-29 | Eastman Kodak Company | Backside illuminated image sensor with reduced dark current |
US7859033B2 (en) | 2008-07-09 | 2010-12-28 | Eastman Kodak Company | Wafer level processing for backside illuminated sensors |
US20100006908A1 (en) * | 2008-07-09 | 2010-01-14 | Brady Frederick T | Backside illuminated image sensor with shallow backside trench for photodiode isolation |
JP5203913B2 (ja) * | 2008-12-15 | 2013-06-05 | キヤノン株式会社 | 光電変換装置、撮像システム、及び光電変換装置の駆動方法 |
JP2010238848A (ja) * | 2009-03-31 | 2010-10-21 | Sony Corp | 固体撮像装置および電子機器 |
US8237831B2 (en) * | 2009-05-28 | 2012-08-07 | Omnivision Technologies, Inc. | Four-channel color filter array interpolation |
JP2012038938A (ja) * | 2010-08-06 | 2012-02-23 | Canon Inc | 固体撮像素子およびカメラ |
JP6071183B2 (ja) | 2011-10-20 | 2017-02-01 | キヤノン株式会社 | 固体撮像装置およびカメラ |
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JP3079567B2 (ja) | 1990-11-30 | 2000-08-21 | ソニー株式会社 | 固体撮像装置 |
CN1070292C (zh) * | 1995-03-23 | 2001-08-29 | 松下电器产业株式会社 | 光学用板及使用它的透射式屏 |
JP3070513B2 (ja) * | 1997-04-07 | 2000-07-31 | 日本電気株式会社 | 固体撮像素子及びその製造方法 |
JP3620237B2 (ja) * | 1997-09-29 | 2005-02-16 | ソニー株式会社 | 固体撮像素子 |
JP3103064B2 (ja) * | 1998-04-23 | 2000-10-23 | 松下電子工業株式会社 | 固体撮像装置およびその製造方法 |
WO2000063924A1 (fr) * | 1999-04-20 | 2000-10-26 | Matsushita Electric Industrial Co., Ltd. | Substrat transparent presentant un revetement multicouche antireflet conducteur, ecran tactile utilisant ce substrat transparent, et dispositif electronique utilisant ledit ecran tactile |
JP2001352051A (ja) | 2000-06-07 | 2001-12-21 | Sony Corp | 固体撮像素子及びその製造方法 |
US6497981B2 (en) * | 2001-03-07 | 2002-12-24 | United Microelectronics Corp. | Method of forming color filter array |
US6828259B2 (en) * | 2001-03-28 | 2004-12-07 | Advanced Micro Devices, Inc. | Enhanced transistor gate using E-beam radiation |
WO2003005069A1 (fr) * | 2001-07-05 | 2003-01-16 | Teijin Dupon Films Japan Limited | Couche mince antireflet et procede de production associe |
JP2003197949A (ja) * | 2001-12-26 | 2003-07-11 | Sharp Corp | 受光素子および回路内蔵型受光装置および光ディスク装置 |
JP2003229562A (ja) | 2002-02-05 | 2003-08-15 | Sony Corp | 半導体装置、その製造方法及び半導体製造装置 |
US6884702B2 (en) * | 2002-06-04 | 2005-04-26 | Advanced Micro Devices, Inc. | Method of making an SOI semiconductor device having enhanced, self-aligned dielectric regions in the bulk silicon substrate |
-
2003
- 2003-11-25 JP JP2003393978A patent/JP4412710B2/ja not_active Expired - Fee Related
-
2004
- 2004-11-15 US US10/986,945 patent/US7518096B2/en not_active Expired - Fee Related
-
2009
- 2009-03-04 US US12/397,751 patent/US7985947B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US7518096B2 (en) | 2009-04-14 |
US7985947B2 (en) | 2011-07-26 |
US20050110002A1 (en) | 2005-05-26 |
US20090189060A1 (en) | 2009-07-30 |
JP2005158940A (ja) | 2005-06-16 |
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