JP4939749B2 - 化合物半導体スイッチ回路装置 - Google Patents

化合物半導体スイッチ回路装置 Download PDF

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Publication number
JP4939749B2
JP4939749B2 JP2004371832A JP2004371832A JP4939749B2 JP 4939749 B2 JP4939749 B2 JP 4939749B2 JP 2004371832 A JP2004371832 A JP 2004371832A JP 2004371832 A JP2004371832 A JP 2004371832A JP 4939749 B2 JP4939749 B2 JP 4939749B2
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JP
Japan
Prior art keywords
layer
region
pad
control terminal
switch circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2004371832A
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English (en)
Japanese (ja)
Other versions
JP2006179707A (ja
Inventor
哲郎 浅野
幹人 榊原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
On Semiconductor Trading Ltd
Original Assignee
On Semiconductor Trading Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by On Semiconductor Trading Ltd filed Critical On Semiconductor Trading Ltd
Priority to JP2004371832A priority Critical patent/JP4939749B2/ja
Priority to TW094135632A priority patent/TWI296462B/zh
Priority to CN2005101317077A priority patent/CN1794583B/zh
Priority to KR1020050123945A priority patent/KR100725884B1/ko
Priority to US11/314,178 priority patent/US8450805B2/en
Publication of JP2006179707A publication Critical patent/JP2006179707A/ja
Application granted granted Critical
Publication of JP4939749B2 publication Critical patent/JP4939749B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0605—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits made of compound material, e.g. AIIIBV
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP2004371832A 2004-12-22 2004-12-22 化合物半導体スイッチ回路装置 Expired - Fee Related JP4939749B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2004371832A JP4939749B2 (ja) 2004-12-22 2004-12-22 化合物半導体スイッチ回路装置
TW094135632A TWI296462B (en) 2004-12-22 2005-10-13 Compound semiconductor switch circuit device
CN2005101317077A CN1794583B (zh) 2004-12-22 2005-12-13 化合物半导体开关电路装置
KR1020050123945A KR100725884B1 (ko) 2004-12-22 2005-12-15 화합물 반도체 스위치 회로 장치
US11/314,178 US8450805B2 (en) 2004-12-22 2005-12-22 Compound semiconductor switch circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004371832A JP4939749B2 (ja) 2004-12-22 2004-12-22 化合物半導体スイッチ回路装置

Publications (2)

Publication Number Publication Date
JP2006179707A JP2006179707A (ja) 2006-07-06
JP4939749B2 true JP4939749B2 (ja) 2012-05-30

Family

ID=36695872

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004371832A Expired - Fee Related JP4939749B2 (ja) 2004-12-22 2004-12-22 化合物半導体スイッチ回路装置

Country Status (5)

Country Link
US (1) US8450805B2 (zh)
JP (1) JP4939749B2 (zh)
KR (1) KR100725884B1 (zh)
CN (1) CN1794583B (zh)
TW (1) TWI296462B (zh)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4535668B2 (ja) * 2002-09-09 2010-09-01 三洋電機株式会社 半導体装置
EP1538673A4 (en) 2002-09-09 2009-07-15 Sanyo Electric Co PROTECTION DEVICE
JP2004260139A (ja) * 2003-02-06 2004-09-16 Sanyo Electric Co Ltd 半導体装置
JP4939750B2 (ja) * 2004-12-22 2012-05-30 オンセミコンダクター・トレーディング・リミテッド 化合物半導体スイッチ回路装置
TW200642268A (en) * 2005-04-28 2006-12-01 Sanyo Electric Co Compound semiconductor switching circuit device
US7840195B2 (en) * 2006-04-28 2010-11-23 Infineon Technologies Ag Multifunction-RF-circuit
US8502273B2 (en) * 2010-10-20 2013-08-06 National Semiconductor Corporation Group III-nitride HEMT having a well region formed on the surface of substrate and contacted the buffer layer to increase breakdown voltage and the method for forming the same
JP5728258B2 (ja) * 2011-03-10 2015-06-03 株式会社東芝 半導体装置
JP6451605B2 (ja) * 2015-11-18 2019-01-16 株式会社村田製作所 高周波モジュール及び通信装置
JP6658253B2 (ja) * 2016-04-21 2020-03-04 富士通株式会社 半導体装置及び半導体装置の製造方法
JP7180359B2 (ja) * 2018-12-19 2022-11-30 富士電機株式会社 抵抗素子
WO2023034685A1 (en) 2021-09-01 2023-03-09 Exxonmobil Chemical Patents Inc. Variable temperature tubular reactor profiles and intermediate density polyethylene compositions produced therefrom

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JP2005353993A (ja) * 2004-06-14 2005-12-22 Sanyo Electric Co Ltd 化合物半導体装置およびその製造方法
JP2005353992A (ja) * 2004-06-14 2005-12-22 Sanyo Electric Co Ltd 化合物半導体装置およびその製造方法
JP4939750B2 (ja) * 2004-12-22 2012-05-30 オンセミコンダクター・トレーディング・リミテッド 化合物半導体スイッチ回路装置
JP4939748B2 (ja) * 2004-12-22 2012-05-30 オンセミコンダクター・トレーディング・リミテッド 化合物半導体スイッチ回路装置
JP2006310512A (ja) * 2005-04-28 2006-11-09 Sanyo Electric Co Ltd 化合物半導体スイッチ回路装置
TW200642268A (en) * 2005-04-28 2006-12-01 Sanyo Electric Co Compound semiconductor switching circuit device
JP5112620B2 (ja) * 2005-05-31 2013-01-09 オンセミコンダクター・トレーディング・リミテッド 化合物半導体装置
EP2239283B1 (en) * 2009-11-10 2012-01-25 Basell Polyolefine GmbH High pressure LDPE for medical applications

Also Published As

Publication number Publication date
CN1794583B (zh) 2011-09-21
JP2006179707A (ja) 2006-07-06
KR100725884B1 (ko) 2007-06-08
US8450805B2 (en) 2013-05-28
CN1794583A (zh) 2006-06-28
TW200623627A (en) 2006-07-01
US20060163659A1 (en) 2006-07-27
TWI296462B (en) 2008-05-01
KR20060071877A (ko) 2006-06-27

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