JP4926692B2 - 配線基板及びその製造方法と半導体装置 - Google Patents
配線基板及びその製造方法と半導体装置 Download PDFInfo
- Publication number
- JP4926692B2 JP4926692B2 JP2006351000A JP2006351000A JP4926692B2 JP 4926692 B2 JP4926692 B2 JP 4926692B2 JP 2006351000 A JP2006351000 A JP 2006351000A JP 2006351000 A JP2006351000 A JP 2006351000A JP 4926692 B2 JP4926692 B2 JP 4926692B2
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- Prior art keywords
- wiring board
- wiring
- base
- resin
- silicon interposer
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
- H01L23/3128—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation the substrate having spherical bumps for external connection
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/565—Moulds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49833—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers the chip support structure consisting of a plurality of insulating substrates
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/0556—Disposition
- H01L2224/05568—Disposition the whole external layer protruding from the surface
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05573—Single external layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
- H01L23/147—Semiconductor insulating substrates
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
- H01L23/49816—Spherical bumps on the substrate for external connection, e.g. ball grid arrays [BGA]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49827—Via connections through the substrates, e.g. pins going through the substrate, coaxial cables
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/50—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor for integrated circuit devices, e.g. power bus, number of leads
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/10251—Elemental semiconductors, i.e. Group IV
- H01L2924/10253—Silicon [Si]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/157—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/1901—Structure
- H01L2924/1904—Component type
- H01L2924/19041—Component type being a capacitor
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
- Y10T29/49126—Assembling bases
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Production Of Multi-Layered Print Wiring Board (AREA)
- Structures For Mounting Electric Components On Printed Circuit Boards (AREA)
- Non-Metallic Protective Coatings For Printed Circuits (AREA)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006351000A JP4926692B2 (ja) | 2006-12-27 | 2006-12-27 | 配線基板及びその製造方法と半導体装置 |
| TW096141679A TW200832673A (en) | 2006-12-27 | 2007-11-05 | Wiring substrate, manufacturing method thereof, and semiconductor device |
| US11/984,004 US7901986B2 (en) | 2006-12-27 | 2007-11-13 | Wiring substrate, manufacturing method thereof, and semiconductor device |
| CNA2007103011690A CN101211888A (zh) | 2006-12-27 | 2007-12-26 | 布线基板及其制造方法以及半导体装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006351000A JP4926692B2 (ja) | 2006-12-27 | 2006-12-27 | 配線基板及びその製造方法と半導体装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2008166327A JP2008166327A (ja) | 2008-07-17 |
| JP2008166327A5 JP2008166327A5 (enExample) | 2009-12-10 |
| JP4926692B2 true JP4926692B2 (ja) | 2012-05-09 |
Family
ID=39581929
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006351000A Active JP4926692B2 (ja) | 2006-12-27 | 2006-12-27 | 配線基板及びその製造方法と半導体装置 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US7901986B2 (enExample) |
| JP (1) | JP4926692B2 (enExample) |
| CN (1) | CN101211888A (enExample) |
| TW (1) | TW200832673A (enExample) |
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| CN102017133B (zh) | 2008-05-09 | 2012-10-10 | 国立大学法人九州工业大学 | 芯片尺寸两面连接封装件及其制造方法 |
| US20090277670A1 (en) * | 2008-05-10 | 2009-11-12 | Booth Jr Roger A | High Density Printed Circuit Board Interconnect and Method of Assembly |
| KR20100037300A (ko) * | 2008-10-01 | 2010-04-09 | 삼성전자주식회사 | 내장형 인터포저를 갖는 반도체장치의 형성방법 |
| JP5518879B2 (ja) * | 2009-09-21 | 2014-06-11 | 株式会社東芝 | 3次元集積回路製造方法、及び装置 |
| US8592973B2 (en) * | 2009-10-16 | 2013-11-26 | Stats Chippac Ltd. | Integrated circuit packaging system with package-on-package stacking and method of manufacture thereof |
| JP5352437B2 (ja) * | 2009-11-30 | 2013-11-27 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
| US8581394B2 (en) | 2010-06-21 | 2013-11-12 | Samsung Electro-Mechanics Co., Ltd | Semiconductor package module and electric circuit assembly with the same |
| US9059187B2 (en) * | 2010-09-30 | 2015-06-16 | Ibiden Co., Ltd. | Electronic component having encapsulated wiring board and method for manufacturing the same |
| KR101719636B1 (ko) * | 2011-01-28 | 2017-04-05 | 삼성전자 주식회사 | 반도체 장치 및 그 제조 방법 |
| US20120292777A1 (en) * | 2011-05-18 | 2012-11-22 | Lotz Jonathan P | Backside Power Delivery Using Die Stacking |
| US20130154106A1 (en) | 2011-12-14 | 2013-06-20 | Broadcom Corporation | Stacked Packaging Using Reconstituted Wafers |
| US9548251B2 (en) | 2012-01-12 | 2017-01-17 | Broadcom Corporation | Semiconductor interposer having a cavity for intra-interposer die |
| US20130187284A1 (en) | 2012-01-24 | 2013-07-25 | Broadcom Corporation | Low Cost and High Performance Flip Chip Package |
| US8558395B2 (en) | 2012-02-21 | 2013-10-15 | Broadcom Corporation | Organic interface substrate having interposer with through-semiconductor vias |
| US8587132B2 (en) | 2012-02-21 | 2013-11-19 | Broadcom Corporation | Semiconductor package including an organic substrate and interposer having through-semiconductor vias |
| US9275976B2 (en) | 2012-02-24 | 2016-03-01 | Broadcom Corporation | System-in-package with integrated socket |
| US8872321B2 (en) | 2012-02-24 | 2014-10-28 | Broadcom Corporation | Semiconductor packages with integrated heat spreaders |
| US8749072B2 (en) | 2012-02-24 | 2014-06-10 | Broadcom Corporation | Semiconductor package with integrated selectively conductive film interposer |
| DE102012202826A1 (de) * | 2012-02-24 | 2013-08-29 | Robert Bosch Gmbh | Stromsensor zur Befestigung an einer Stromschiene |
| US8928128B2 (en) | 2012-02-27 | 2015-01-06 | Broadcom Corporation | Semiconductor package with integrated electromagnetic shielding |
| US9368458B2 (en) | 2013-07-10 | 2016-06-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | Die-on-interposer assembly with dam structure and method of manufacturing the same |
| CN105493268B (zh) | 2013-08-26 | 2019-01-22 | 日立金属株式会社 | 安装基板用衬底、多层陶瓷基板、安装基板、芯片模块和安装基板用衬底的制造方法 |
| TWI493195B (zh) * | 2013-11-04 | 2015-07-21 | Via Tech Inc | 探針卡 |
| US12068231B2 (en) * | 2014-05-24 | 2024-08-20 | Broadpak Corporation | 3D integrations and methods of making thereof |
| JP2016058596A (ja) * | 2014-09-11 | 2016-04-21 | ソニー株式会社 | 電子デバイス、部品実装基板及び電子機器 |
| TWI566305B (zh) * | 2014-10-29 | 2017-01-11 | 巨擘科技股份有限公司 | 製造三維積體電路的方法 |
| US9971970B1 (en) * | 2015-04-27 | 2018-05-15 | Rigetti & Co, Inc. | Microwave integrated quantum circuits with VIAS and methods for making the same |
| US9859202B2 (en) * | 2015-06-24 | 2018-01-02 | Dyi-chung Hu | Spacer connector |
| EP3376537A4 (en) * | 2015-11-11 | 2019-04-17 | KYOCERA Corporation | PACKAGING FOR AN ELECTRONIC COMPONENT |
| FR3044864B1 (fr) * | 2015-12-02 | 2018-01-12 | Valeo Systemes De Controle Moteur | Dispositif electrique et procede d'assemblage d'un tel dispositif electrique |
| US10181447B2 (en) | 2017-04-21 | 2019-01-15 | Invensas Corporation | 3D-interconnect |
| US10687419B2 (en) | 2017-06-13 | 2020-06-16 | Advanced Semiconductor Engineering, Inc. | Semiconductor package device and method of manufacturing the same |
| US11121301B1 (en) | 2017-06-19 | 2021-09-14 | Rigetti & Co, Inc. | Microwave integrated quantum circuits with cap wafers and their methods of manufacture |
| US10628354B2 (en) * | 2017-12-11 | 2020-04-21 | Micron Technology, Inc. | Translation system for finer grain memory architectures |
| KR102661196B1 (ko) * | 2019-11-08 | 2024-04-29 | 삼성전자 주식회사 | 적층형 기판을 포함하는 전자 장치 |
| US11515173B2 (en) * | 2019-12-27 | 2022-11-29 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor devices and methods of manufacturing |
| CN113053758A (zh) | 2019-12-27 | 2021-06-29 | 台湾积体电路制造股份有限公司 | 半导体器件的制造方法 |
| US20220069489A1 (en) * | 2020-08-28 | 2022-03-03 | Unimicron Technology Corp. | Circuit board structure and manufacturing method thereof |
| US11540396B2 (en) * | 2020-08-28 | 2022-12-27 | Unimicron Technology Corp. | Circuit board structure and manufacturing method thereof |
| CN111933590B (zh) * | 2020-09-11 | 2021-01-01 | 甬矽电子(宁波)股份有限公司 | 封装结构和封装结构制作方法 |
| CN113270327B (zh) * | 2021-07-20 | 2021-12-07 | 珠海越亚半导体股份有限公司 | 主被动器件垂直叠层嵌埋封装结构及其制作方法 |
| US12040284B2 (en) | 2021-11-12 | 2024-07-16 | Invensas Llc | 3D-interconnect with electromagnetic interference (“EMI”) shield and/or antenna |
| CN116825746A (zh) * | 2023-07-03 | 2023-09-29 | 武汉新芯集成电路制造有限公司 | 半导体封装结构及其制造方法 |
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| TW434756B (en) * | 1998-06-01 | 2001-05-16 | Hitachi Ltd | Semiconductor device and its manufacturing method |
| JP2001102479A (ja) | 1999-09-27 | 2001-04-13 | Toshiba Corp | 半導体集積回路装置およびその製造方法 |
| JP2002222901A (ja) * | 2001-01-29 | 2002-08-09 | Sony Corp | 半導体デバイスの実装方法及びその実装構造、半導体装置の製造方法及び半導体装置 |
| JP3679786B2 (ja) * | 2002-06-25 | 2005-08-03 | 松下電器産業株式会社 | 半導体装置の製造方法 |
| JP4390541B2 (ja) * | 2003-02-03 | 2009-12-24 | Necエレクトロニクス株式会社 | 半導体装置及びその製造方法 |
| JP3917946B2 (ja) * | 2003-03-11 | 2007-05-23 | 富士通株式会社 | 積層型半導体装置 |
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| JP2005039232A (ja) * | 2003-06-24 | 2005-02-10 | Ngk Spark Plug Co Ltd | 半導体素子付き中継基板、中継基板付き基板、半導体素子と中継基板と基板とからなる構造体 |
| JP4205613B2 (ja) * | 2004-03-01 | 2009-01-07 | エルピーダメモリ株式会社 | 半導体装置 |
| JP4441328B2 (ja) * | 2004-05-25 | 2010-03-31 | 株式会社ルネサステクノロジ | 半導体装置及びその製造方法 |
| US7105918B2 (en) * | 2004-07-29 | 2006-09-12 | Micron Technology, Inc. | Interposer with flexible solder pad elements and methods of manufacturing the same |
| JP4551255B2 (ja) * | 2005-03-31 | 2010-09-22 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
| JP2007036104A (ja) * | 2005-07-29 | 2007-02-08 | Nec Electronics Corp | 半導体装置およびその製造方法 |
| US7608921B2 (en) * | 2006-12-07 | 2009-10-27 | Stats Chippac, Inc. | Multi-layer semiconductor package |
-
2006
- 2006-12-27 JP JP2006351000A patent/JP4926692B2/ja active Active
-
2007
- 2007-11-05 TW TW096141679A patent/TW200832673A/zh unknown
- 2007-11-13 US US11/984,004 patent/US7901986B2/en active Active
- 2007-12-26 CN CNA2007103011690A patent/CN101211888A/zh active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| US7901986B2 (en) | 2011-03-08 |
| TW200832673A (en) | 2008-08-01 |
| US20080155820A1 (en) | 2008-07-03 |
| JP2008166327A (ja) | 2008-07-17 |
| CN101211888A (zh) | 2008-07-02 |
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