JP4919370B2 - 半導体受光装置及び半導体受光装置の製造方法 - Google Patents
半導体受光装置及び半導体受光装置の製造方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims description 186
- 238000004519 manufacturing process Methods 0.000 title claims description 26
- 239000012535 impurity Substances 0.000 claims description 70
- 238000005468 ion implantation Methods 0.000 claims description 51
- 239000000758 substrate Substances 0.000 claims description 32
- 238000000926 separation method Methods 0.000 claims description 31
- 238000000034 method Methods 0.000 claims description 18
- 238000009792 diffusion process Methods 0.000 claims description 15
- 150000002500 ions Chemical class 0.000 claims description 13
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- 230000035945 sensitivity Effects 0.000 description 33
- 235000005811 Viola adunca Nutrition 0.000 description 19
- 240000009038 Viola odorata Species 0.000 description 19
- 235000013487 Viola odorata Nutrition 0.000 description 19
- 235000002254 Viola papilionacea Nutrition 0.000 description 19
- 230000007423 decrease Effects 0.000 description 9
- 230000003287 optical effect Effects 0.000 description 8
- 238000002955 isolation Methods 0.000 description 6
- 238000009413 insulation Methods 0.000 description 4
- 230000010355 oscillation Effects 0.000 description 4
- 238000005215 recombination Methods 0.000 description 4
- 230000006798 recombination Effects 0.000 description 4
- 239000000969 carrier Substances 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 238000004088 simulation Methods 0.000 description 3
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F24—HEATING; RANGES; VENTILATING
- F24C—DOMESTIC STOVES OR RANGES ; DETAILS OF DOMESTIC STOVES OR RANGES, OF GENERAL APPLICATION
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
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- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
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Description
本発明では、分離部の不純物濃度が、第1濃度以下になるので、青紫レーザ光を照射したときでも、分離部での受光感度の低下を防止できる。それにより、照射位置に関わらず、受光感度を一定にすることができる。
2、2’、2−1、2−2、…、2−n、102 フォトダイオード部
3、103 回路部
10、110 p−型半導体基板
11、11a、104 p+型埋込層
12、12a n+型埋込層
13、113 n型エピタキシャル層
14、14a p−型イオン注入層
15、15a p型イオン注入層
16、105 n+型拡散層
17、106 コレクタ引き出し部
18、107 ベース部
19、108 エミッタ部
20、109 青紫レーザ光
21、22 分離部
Claims (9)
- 半導体基板上に設けられ、受光した光を電気に変換する複数のフォトダイオード部と、
前記複数のフォトダイオード部を互いに電気的に分離する分離部と
を具備し、
前記複数のフォトダイオード部の各々は、
前記複数のフォトダイオード部に共通の第1導電型の第1半導体層と、
前記第1半導体層上に接合された第2導電型の第2半導体層と
を備え、
前記分離部は、
表面から前記第1半導体層まで貫通する前記第1導電型の第3半導体部を備え、
前記第2半導体層の前記第2導電型の不純物濃度は、前記第3半導体部の前記第1導電型の不純物濃度よりも小さく、
前記第3半導体部は、表面部分よりも深い位置に、前記第1導電型の不純物濃度の極大値を持つ
半導体受光装置。 - 請求項1に記載の半導体受光装置において、
前記第3半導体部の前記表面部分における前記第1導電型の不純物濃度は、5×1016cm−3以下で、前記第2半導体層の前記第2導電型の不純物濃度より高い
半導体受光装置。 - 請求項1又は2に記載の半導体受光装置において、
前記第2半導体層は、受光側に設けられた前記第2導電型の第4半導体層を含む
半導体受光装置。 - 請求項1乃至3のいずれか一項に記載の半導体受光装置において、
前記第3半導体部における前記第1導電型の不純物濃度の前記極大値は、前記第3半導体における前記光の吸収長よりも深い位置にある
半導体受光装置。 - 第1導電型の半導体基板と、
前記半導体基板上に設けられた第2導電型の成膜層と、
前記成膜層の表面における互いに隣接する複数の領域に設けられた前記第2導電型の複数の第1埋込層と、
前記複数の領域の前記成膜層を互いに電気的に分割し、前記成膜層の表面から前記半導体基板へ伸び、前記第1導電型を有する第2埋込層と
を具備し、
前記成膜層の前記第2導電型の不純物濃度は、前記第2埋込層の前記第1導電型の不純物濃度よりも小さく、
前記第2埋込層は、表面部分よりも深い位置に、前記第1導電型の不純物濃度の極大値を持つ
半導体受光装置。 - (a)第1導電型の第1半導体層上の所定の位置に、前記第1半導体層の前記第1導電型の不純物濃度よりも高い前記第1導電型の不純物濃度を有する埋込層を形成する工程と、
(b)前記第1半導体層及び前記埋込層を覆うように第2導電型の第2半導体層を形成する工程と、
(c)前記第2半導体層における前記埋込層の上方において、前記第2半導体層の表面の前記第1導電型の不純物濃度が前記第2半導体層の前記第2導電型の不純物濃度の濃度より高い第1イオン注入層を形成するように、前記第1導電型の不純物を含むイオンを前記第2半導体層へ注入する工程と、
(d)前記埋込層と前記第1イオン注入層とがつながった分離部を形成するように熱処理を行う工程と
を具備し、
前記分離部は、表面よりも深い位置に、前記第1導電型の不純物濃度の極大値を持つ
半導体受光装置の製造方法。 - 請求項6に記載の半導体受光装置の製造方法において、
前記(c)工程は、
(c1)前記第2半導体層における前記第1イオン注入層を形成する領域を除くフォトダイオード領域において、前記第2半導体層の前記第2導電型の不純物濃度よりも高い前記第2導電型の不純物濃度を有する第2イオン注入層を表面に形成するように前記第2導電型の不純物を含むイオンを前記第2半導体層へ注入する工程を備える
半導体受光装置の製造方法。 - (a)第1導電型の第1半導体層上の所定の位置に、前記第1半導体層の前記第1導電型の不純物濃度よりも高い前記第1導電型の不純物濃度を有する埋込層を形成する工程と、
(b)前記第1半導体層及び前記埋込層を覆うように第2導電型の第2半導体層を形成する工程と、
(c)前記第2半導体層における前記埋込層の上方において、前記第2半導体層の表面の前記第1導電型の不純物濃度が前記第2半導体層の前記第2導電型の不純物濃度の濃度より高い第1イオン注入層を形成するように、前記第1導電型の不純物を含むイオンを前記第2半導体層へ注入する工程と、
(d)前記埋込層と前記第1イオン注入層とがつながった分離部を形成するように熱処理を行う工程と
を具備し、
前記(c)工程は、
(c2)前記第1イオン注入層の表面に、前記第1導電型の第3イオン注入層を形成するように前記第1導電型の不純物を含むイオンを前記第1イオン注入層へ注入する工程を備え、
前記第3イオン注入層の表面の前記第1導電型の不純物濃度は、前記第2半導体層の前記第2導電型の不純物濃度の濃度より高く、
前記分離部は、表面よりも深い位置に、前記第1導電型の不純物濃度の極大値を持つ
半導体受光装置の製造方法。 - (a)第1導電型の第1半導体層上の所定の位置に、前記第1半導体層の前記第1導電型の不純物濃度よりも高い前記第1導電型の不純物濃度を有する埋込層を形成する工程と、
(b)前記第1半導体層及び前記埋込層を覆うように第2導電型の第2半導体層を形成する工程と、
(c)前記第2半導体層における前記埋込層の上方において、前記第2半導体層の表面の前記第1導電型の不純物濃度が前記第2半導体層の前記第2導電型の不純物濃度の濃度より高い第1イオン注入層を形成するように、前記第1導電型の不純物を含むイオンを前記第2半導体層へ注入する工程と、
(d)前記埋込層と前記第1イオン注入層とがつながった分離部を形成するように熱処理を行う工程と
を具備し、
前記(c)工程は、
(c3)前記第1イオン注入層の表面に、前記第1導電型の拡散層を形成するように前記第1導電型の不純物を前記第1イオン注入層へ拡散させる工程を備え、
前記拡散層の表面の前記第1導電型の不純物濃度は、前記第2半導体層の前記第2導電型の不純物濃度の濃度より高く、
前記分離部は、表面よりも深い位置に、前記第1導電型の不純物濃度の極大値を持つ
半導体受光装置の製造方法。
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JP2005102836A JP4919370B2 (ja) | 2005-03-31 | 2005-03-31 | 半導体受光装置及び半導体受光装置の製造方法 |
EP06006425A EP1708267A1 (en) | 2005-03-31 | 2006-03-28 | Semiconductor light receiving device with electrical pixel isolation and method of manufacturing the same |
KR1020060028409A KR20060106753A (ko) | 2005-03-31 | 2006-03-29 | 반도체수광장치 및 그 제조방법 |
TW095111171A TW200644267A (en) | 2005-03-31 | 2006-03-30 | Semiconductor light receiving device and method of manufacturing the same |
US11/393,789 US7655965B2 (en) | 2005-03-31 | 2006-03-31 | Semiconductor light receiving device and method of manufacturing the same |
CNB2006100738567A CN100485945C (zh) | 2005-03-31 | 2006-03-31 | 半导体光接收器件及其制造方法 |
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JP5538922B2 (ja) | 2009-02-06 | 2014-07-02 | キヤノン株式会社 | 固体撮像装置の製造方法 |
JP2010206178A (ja) | 2009-02-06 | 2010-09-16 | Canon Inc | 光電変換装置、及び光電変換装置の製造方法 |
JP2010206181A (ja) | 2009-02-06 | 2010-09-16 | Canon Inc | 光電変換装置及び撮像システム |
JP5539105B2 (ja) * | 2009-09-24 | 2014-07-02 | キヤノン株式会社 | 光電変換装置およびそれを用いた撮像システム |
JP7039205B2 (ja) * | 2017-07-27 | 2022-03-22 | キヤノン株式会社 | 固体撮像装置、固体撮像装置の製造方法、及び撮像装置 |
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JP3317942B2 (ja) * | 1999-11-08 | 2002-08-26 | シャープ株式会社 | 半導体装置およびその製造方法 |
JP2002100060A (ja) | 2000-09-27 | 2002-04-05 | Matsushita Electric Ind Co Ltd | 記録再生装置用受光素子と受光回路 |
JP2002203954A (ja) * | 2000-10-31 | 2002-07-19 | Sharp Corp | 回路内蔵受光素子 |
JP2003051589A (ja) * | 2001-08-07 | 2003-02-21 | Sharp Corp | 受光素子内蔵型半導体装置の製造方法及び受光素子内蔵型半導体装置 |
JP2002329853A (ja) * | 2002-02-22 | 2002-11-15 | Sharp Corp | 回路内蔵受光素子 |
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- 2006-03-28 EP EP06006425A patent/EP1708267A1/en not_active Withdrawn
- 2006-03-29 KR KR1020060028409A patent/KR20060106753A/ko active Search and Examination
- 2006-03-30 TW TW095111171A patent/TW200644267A/zh unknown
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US20060220079A1 (en) | 2006-10-05 |
CN1841755A (zh) | 2006-10-04 |
KR20060106753A (ko) | 2006-10-12 |
TW200644267A (en) | 2006-12-16 |
CN100485945C (zh) | 2009-05-06 |
EP1708267A1 (en) | 2006-10-04 |
JP2006286806A (ja) | 2006-10-19 |
US7655965B2 (en) | 2010-02-02 |
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