CN1841755A - 半导体光接收器件及其制造方法 - Google Patents
半导体光接收器件及其制造方法 Download PDFInfo
- Publication number
- CN1841755A CN1841755A CNA2006100738567A CN200610073856A CN1841755A CN 1841755 A CN1841755 A CN 1841755A CN A2006100738567 A CNA2006100738567 A CN A2006100738567A CN 200610073856 A CN200610073856 A CN 200610073856A CN 1841755 A CN1841755 A CN 1841755A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 175
- 238000004519 manufacturing process Methods 0.000 title claims description 24
- 239000012535 impurity Substances 0.000 claims abstract description 63
- 230000035945 sensitivity Effects 0.000 claims abstract description 40
- 230000003287 optical effect Effects 0.000 claims description 49
- 239000000758 substrate Substances 0.000 claims description 30
- 238000000034 method Methods 0.000 claims description 26
- 238000009792 diffusion process Methods 0.000 claims description 17
- 230000015572 biosynthetic process Effects 0.000 claims description 6
- 235000005811 Viola adunca Nutrition 0.000 abstract 1
- 240000009038 Viola odorata Species 0.000 abstract 1
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- 235000002254 Viola papilionacea Nutrition 0.000 abstract 1
- 241001062009 Indigofera Species 0.000 description 14
- 235000000177 Indigofera tinctoria Nutrition 0.000 description 13
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- COHYTHOBJLSHDF-UHFFFAOYSA-N indigo powder Natural products N1C2=CC=CC=C2C(=O)C1=C1C(=O)C2=CC=CC=C2N1 COHYTHOBJLSHDF-UHFFFAOYSA-N 0.000 description 13
- 230000005611 electricity Effects 0.000 description 7
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- 238000009413 insulation Methods 0.000 description 6
- 239000002800 charge carrier Substances 0.000 description 4
- 230000010355 oscillation Effects 0.000 description 4
- 238000009826 distribution Methods 0.000 description 3
- 230000031700 light absorption Effects 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 230000008929 regeneration Effects 0.000 description 2
- 238000011069 regeneration method Methods 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 230000004913 activation Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1463—Pixel isolation structures
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F24—HEATING; RANGES; VENTILATING
- F24C—DOMESTIC STOVES OR RANGES ; DETAILS OF DOMESTIC STOVES OR RANGES, OF GENERAL APPLICATION
- F24C15/00—Details
- F24C15/20—Removing cooking fumes
- F24C15/2064—Removing cooking fumes illumination for cooking hood
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V33/00—Structural combinations of lighting devices with other articles, not otherwise provided for
- F21V33/0088—Ventilating systems
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14689—MOS based technologies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/1446—Devices controlled by radiation in a repetitive configuration
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
- H01L31/035281—Shape of the body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
- H01L31/03529—Shape of the potential jump barrier or surface barrier
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Combustion & Propulsion (AREA)
- Light Receiving Elements (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
Description
Claims (14)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005102836A JP4919370B2 (ja) | 2005-03-31 | 2005-03-31 | 半導体受光装置及び半導体受光装置の製造方法 |
JP2005102836 | 2005-03-31 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1841755A true CN1841755A (zh) | 2006-10-04 |
CN100485945C CN100485945C (zh) | 2009-05-06 |
Family
ID=36295513
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2006100738567A Expired - Fee Related CN100485945C (zh) | 2005-03-31 | 2006-03-31 | 半导体光接收器件及其制造方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US7655965B2 (zh) |
EP (1) | EP1708267A1 (zh) |
JP (1) | JP4919370B2 (zh) |
KR (1) | KR20060106753A (zh) |
CN (1) | CN100485945C (zh) |
TW (1) | TW200644267A (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102034837A (zh) * | 2009-09-24 | 2011-04-27 | 佳能株式会社 | 光电转换装置和使用光电转换装置的成像系统 |
CN112885858A (zh) * | 2021-03-31 | 2021-06-01 | 华虹半导体(无锡)有限公司 | Cmos图像传感器及其制造方法 |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20030186882A1 (en) * | 2001-07-31 | 2003-10-02 | Podolsky Daniel K. | Methods and compositions for treating and preventing distal bowel lesions |
KR100937670B1 (ko) | 2007-12-28 | 2010-01-19 | 주식회사 동부하이텍 | 씨모스(cmos) 이미지 센서의 제조방법 |
JP5538922B2 (ja) | 2009-02-06 | 2014-07-02 | キヤノン株式会社 | 固体撮像装置の製造方法 |
JP2010206178A (ja) | 2009-02-06 | 2010-09-16 | Canon Inc | 光電変換装置、及び光電変換装置の製造方法 |
JP2010206181A (ja) | 2009-02-06 | 2010-09-16 | Canon Inc | 光電変換装置及び撮像システム |
JP7039205B2 (ja) * | 2017-07-27 | 2022-03-22 | キヤノン株式会社 | 固体撮像装置、固体撮像装置の製造方法、及び撮像装置 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6161457A (ja) * | 1984-09-01 | 1986-03-29 | Canon Inc | 光センサおよびその製造方法 |
JP2800827B2 (ja) * | 1988-02-12 | 1998-09-21 | 浜松ホトニクス株式会社 | 光半導体装置およびその製造方法 |
JP2557750B2 (ja) * | 1991-02-27 | 1996-11-27 | 三洋電機株式会社 | 光半導体装置 |
JP3244425B2 (ja) | 1996-04-17 | 2002-01-07 | 三洋電機株式会社 | 光半導体集積回路 |
JP3170463B2 (ja) * | 1996-09-30 | 2001-05-28 | シャープ株式会社 | 回路内蔵受光素子 |
US5831322A (en) * | 1997-06-25 | 1998-11-03 | Advanced Photonix, Inc. | Active large area avalanche photodiode array |
DE69906923T2 (de) * | 1998-12-28 | 2004-02-26 | Sharp K.K. | Lichtempfänger mit integrierter Schaltung |
JP2000223735A (ja) | 1999-01-28 | 2000-08-11 | Nec Corp | 半導体受光装置とその製造方法 |
JP2001119060A (ja) * | 1999-10-18 | 2001-04-27 | Seiko Instruments Inc | フォトダイオード |
JP3317942B2 (ja) * | 1999-11-08 | 2002-08-26 | シャープ株式会社 | 半導体装置およびその製造方法 |
JP2002100060A (ja) | 2000-09-27 | 2002-04-05 | Matsushita Electric Ind Co Ltd | 記録再生装置用受光素子と受光回路 |
JP2002203954A (ja) * | 2000-10-31 | 2002-07-19 | Sharp Corp | 回路内蔵受光素子 |
JP2003051589A (ja) * | 2001-08-07 | 2003-02-21 | Sharp Corp | 受光素子内蔵型半導体装置の製造方法及び受光素子内蔵型半導体装置 |
JP2002329853A (ja) * | 2002-02-22 | 2002-11-15 | Sharp Corp | 回路内蔵受光素子 |
-
2005
- 2005-03-31 JP JP2005102836A patent/JP4919370B2/ja not_active Expired - Fee Related
-
2006
- 2006-03-28 EP EP06006425A patent/EP1708267A1/en not_active Withdrawn
- 2006-03-29 KR KR1020060028409A patent/KR20060106753A/ko active Search and Examination
- 2006-03-30 TW TW095111171A patent/TW200644267A/zh unknown
- 2006-03-31 US US11/393,789 patent/US7655965B2/en not_active Expired - Fee Related
- 2006-03-31 CN CNB2006100738567A patent/CN100485945C/zh not_active Expired - Fee Related
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102034837A (zh) * | 2009-09-24 | 2011-04-27 | 佳能株式会社 | 光电转换装置和使用光电转换装置的成像系统 |
CN102034837B (zh) * | 2009-09-24 | 2012-07-11 | 佳能株式会社 | 光电转换装置和使用光电转换装置的成像系统 |
CN112885858A (zh) * | 2021-03-31 | 2021-06-01 | 华虹半导体(无锡)有限公司 | Cmos图像传感器及其制造方法 |
Also Published As
Publication number | Publication date |
---|---|
US20060220079A1 (en) | 2006-10-05 |
JP4919370B2 (ja) | 2012-04-18 |
KR20060106753A (ko) | 2006-10-12 |
TW200644267A (en) | 2006-12-16 |
CN100485945C (zh) | 2009-05-06 |
EP1708267A1 (en) | 2006-10-04 |
JP2006286806A (ja) | 2006-10-19 |
US7655965B2 (en) | 2010-02-02 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: ACER COMPUTER (CHINA) CO., LTD. Free format text: FORMER OWNER: BEIDA FANGZHENG SCIENCE + TECHNOLOGY COMPUTER SYSTEM CO., LTD., SHANGHAI Effective date: 20101029 |
|
C41 | Transfer of patent application or patent right or utility model | ||
COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 200120 36/F, SHANGHAI INTERNATIONAL BUILDING, NO.360, PUDONG SOUTH ROAD, PUDONG NEW DISTRICT, SHANGHAI TO: 200001 3/F, NO.168, XIZANG MIDDLE ROAD, HUANGPU DISTRICT, SHANGHAI |
|
TR01 | Transfer of patent right |
Effective date of registration: 20101105 Address after: Kanagawa, Japan Patentee after: Renesas Electronics Corporation Address before: Kanagawa, Japan Patentee before: NEC Corp. |
|
C17 | Cessation of patent right | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20090506 Termination date: 20140331 |