JP4906047B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

Info

Publication number
JP4906047B2
JP4906047B2 JP2005342479A JP2005342479A JP4906047B2 JP 4906047 B2 JP4906047 B2 JP 4906047B2 JP 2005342479 A JP2005342479 A JP 2005342479A JP 2005342479 A JP2005342479 A JP 2005342479A JP 4906047 B2 JP4906047 B2 JP 4906047B2
Authority
JP
Japan
Prior art keywords
output
input
wiring layer
power supply
surface side
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2005342479A
Other languages
English (en)
Japanese (ja)
Other versions
JP2007149977A (ja
JP2007149977A5 (enExample
Inventor
泰弘 吉川
元大 諏訪
博 豊嶋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Electronics Corp
Original Assignee
Renesas Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Electronics Corp filed Critical Renesas Electronics Corp
Priority to JP2005342479A priority Critical patent/JP4906047B2/ja
Priority to KR1020060117069A priority patent/KR101277381B1/ko
Priority to US11/563,312 priority patent/US7800214B2/en
Publication of JP2007149977A publication Critical patent/JP2007149977A/ja
Publication of JP2007149977A5 publication Critical patent/JP2007149977A5/ja
Priority to US12/860,415 priority patent/US7888788B2/en
Application granted granted Critical
Publication of JP4906047B2 publication Critical patent/JP4906047B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • H10W70/60
    • H10W20/43
    • H10W70/65
    • H10W72/00
    • H10W72/90
    • H10W72/9415
    • H10W90/724

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
JP2005342479A 2005-11-28 2005-11-28 半導体装置 Expired - Fee Related JP4906047B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2005342479A JP4906047B2 (ja) 2005-11-28 2005-11-28 半導体装置
KR1020060117069A KR101277381B1 (ko) 2005-11-28 2006-11-24 반도체 장치
US11/563,312 US7800214B2 (en) 2005-11-28 2006-11-27 Semiconductor device
US12/860,415 US7888788B2 (en) 2005-11-28 2010-08-20 Semiconductor device with reduced cross talk

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005342479A JP4906047B2 (ja) 2005-11-28 2005-11-28 半導体装置

Publications (3)

Publication Number Publication Date
JP2007149977A JP2007149977A (ja) 2007-06-14
JP2007149977A5 JP2007149977A5 (enExample) 2009-01-22
JP4906047B2 true JP4906047B2 (ja) 2012-03-28

Family

ID=38086644

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005342479A Expired - Fee Related JP4906047B2 (ja) 2005-11-28 2005-11-28 半導体装置

Country Status (3)

Country Link
US (2) US7800214B2 (enExample)
JP (1) JP4906047B2 (enExample)
KR (1) KR101277381B1 (enExample)

Families Citing this family (44)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4906047B2 (ja) * 2005-11-28 2012-03-28 ルネサスエレクトロニクス株式会社 半導体装置
JP4638902B2 (ja) 2007-09-27 2011-02-23 Okiセミコンダクタ株式会社 半導体素子、及びそのレイアウト方法
JP4645635B2 (ja) * 2007-11-02 2011-03-09 セイコーエプソン株式会社 電子部品
JP2010093109A (ja) * 2008-10-09 2010-04-22 Renesas Technology Corp 半導体装置、半導体装置の製造方法および半導体モジュールの製造方法
US8386229B1 (en) * 2009-04-17 2013-02-26 Xilinx, Inc. Integrated circuit package component and ball grid array simulation model
JP5405283B2 (ja) * 2009-12-10 2014-02-05 シャープ株式会社 半導体装置およびその電力供給方法
US8891246B2 (en) * 2010-03-17 2014-11-18 Intel Corporation System-in-package using embedded-die coreless substrates, and processes of forming same
US8901747B2 (en) 2010-07-29 2014-12-02 Mosys, Inc. Semiconductor chip layout
US8513817B2 (en) 2011-07-12 2013-08-20 Invensas Corporation Memory module in a package
US8823165B2 (en) 2011-07-12 2014-09-02 Invensas Corporation Memory module in a package
US8502390B2 (en) 2011-07-12 2013-08-06 Tessera, Inc. De-skewed multi-die packages
US8659141B2 (en) 2011-10-03 2014-02-25 Invensas Corporation Stub minimization using duplicate sets of terminals for wirebond assemblies without windows
US8525327B2 (en) 2011-10-03 2013-09-03 Invensas Corporation Stub minimization for assemblies without wirebonds to package substrate
EP2769409A1 (en) 2011-10-03 2014-08-27 Invensas Corporation Stub minimization for multi-die wirebond assemblies with orthogonal windows
KR101894823B1 (ko) 2011-10-03 2018-09-04 인벤사스 코포레이션 평행한 윈도우를 갖는 다중-다이 와이어 본드 어셈블리를 위한 스터브 최소화
WO2013052321A2 (en) * 2011-10-03 2013-04-11 Invensas Corporation Stub minimization using duplicate sets of signal terminals in assemblies without wirebonds to package substrate
WO2013052544A1 (en) 2011-10-03 2013-04-11 Invensas Corporation Stub minimization with terminal grids offset from center of package
WO2013052411A1 (en) * 2011-10-03 2013-04-11 Invensas Corporation Stub minimization for wirebond assemblies without windows
US8659143B2 (en) 2011-10-03 2014-02-25 Invensas Corporation Stub minimization for wirebond assemblies without windows
US8659140B2 (en) 2011-10-03 2014-02-25 Invensas Corporation Stub minimization using duplicate sets of signal terminals in assemblies without wirebonds to package substrate
WO2013052345A1 (en) 2011-10-03 2013-04-11 Invensas Corporation Stub minimization for assemblies without wirebonds to package substrate
WO2013052323A1 (en) * 2011-10-03 2013-04-11 Invensas Corporation Stub minimization using duplicate sets of terminals for wirebond assemblies without windows
CN103137210A (zh) * 2011-11-23 2013-06-05 鸿富锦精密工业(深圳)有限公司 Ddr信号测试辅助治具
US8848392B2 (en) 2012-08-27 2014-09-30 Invensas Corporation Co-support module and microelectronic assembly
US8787034B2 (en) 2012-08-27 2014-07-22 Invensas Corporation Co-support system and microelectronic assembly
US8848391B2 (en) 2012-08-27 2014-09-30 Invensas Corporation Co-support component and microelectronic assembly
US9368477B2 (en) 2012-08-27 2016-06-14 Invensas Corporation Co-support circuit panel and microelectronic packages
US9070423B2 (en) 2013-06-11 2015-06-30 Invensas Corporation Single package dual channel memory with co-support
US9123555B2 (en) 2013-10-25 2015-09-01 Invensas Corporation Co-support for XFD packaging
JP2015153808A (ja) * 2014-02-12 2015-08-24 ソニー株式会社 半導体チップ、および、半導体モジュール
US9281296B2 (en) 2014-07-31 2016-03-08 Invensas Corporation Die stacking techniques in BGA memory package for small footprint CPU and memory motherboard design
US9691437B2 (en) 2014-09-25 2017-06-27 Invensas Corporation Compact microelectronic assembly having reduced spacing between controller and memory packages
JP6527420B2 (ja) * 2015-07-31 2019-06-05 ルネサスエレクトロニクス株式会社 半導体装置
US9484080B1 (en) 2015-11-09 2016-11-01 Invensas Corporation High-bandwidth memory application with controlled impedance loading
JP6599813B2 (ja) 2016-04-12 2019-10-30 三重富士通セミコンダクター株式会社 半導体集積回路及び半導体集積回路の設計方法
US9679613B1 (en) 2016-05-06 2017-06-13 Invensas Corporation TFD I/O partition for high-speed, high-density applications
US9842181B1 (en) * 2016-05-24 2017-12-12 Altera Corporation Method to optimize general-purpose input/output interface pad assignments for integrated circuit
KR102639101B1 (ko) * 2017-02-24 2024-02-22 에스케이하이닉스 주식회사 전자기간섭 차폐 구조를 갖는 반도체 패키지
JP6402217B2 (ja) * 2017-03-15 2018-10-10 アオイ電子株式会社 半導体装置および半導体装置の製造方法
US10314163B2 (en) * 2017-05-17 2019-06-04 Xilinx, Inc. Low crosstalk vertical connection interface
KR102449619B1 (ko) 2017-12-14 2022-09-30 삼성전자주식회사 반도체 패키지 및 이를 포함하는 반도체 모듈
CN109411436B (zh) * 2018-09-05 2021-04-30 湖北三江航天险峰电子信息有限公司 一种64路模拟量采集bga封装芯片
US11670578B2 (en) * 2020-06-02 2023-06-06 Micron Technology, Inc. Ball grid arrays and associated apparatuses and systems
CN115705959B (zh) * 2021-08-17 2024-09-10 比亚迪股份有限公司 母线电容及汽车

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02177394A (ja) * 1988-12-27 1990-07-10 Nec Corp マイクロ波回路構造
JPH11135668A (ja) 1997-10-31 1999-05-21 Nec Corp 半導体装置
US6008534A (en) * 1998-01-14 1999-12-28 Lsi Logic Corporation Integrated circuit package having signal traces interposed between power and ground conductors in order to form stripline transmission lines
JP2001044591A (ja) * 1999-08-03 2001-02-16 Ngk Spark Plug Co Ltd 配線基板
JP2001203298A (ja) 2000-01-19 2001-07-27 Hitachi Ltd 半導体装置およびその製造方法
TW577152B (en) * 2000-12-18 2004-02-21 Hitachi Ltd Semiconductor integrated circuit device
JP2002222892A (ja) * 2001-01-26 2002-08-09 Kyocera Corp 多層配線基板
US6800947B2 (en) * 2001-06-27 2004-10-05 Intel Corporation Flexible tape electronics packaging
JP4079699B2 (ja) * 2001-09-28 2008-04-23 富士通株式会社 多層配線回路基板
JP2003264256A (ja) * 2002-03-08 2003-09-19 Hitachi Ltd 半導体装置
JP4211378B2 (ja) * 2002-12-13 2009-01-21 ソニー株式会社 キャパシタ素子
US7791210B2 (en) * 2003-11-05 2010-09-07 Lsi Corporation Semiconductor package having discrete non-active electrical components incorporated into the package
JP4671261B2 (ja) * 2003-11-14 2011-04-13 ルネサスエレクトロニクス株式会社 半導体装置
JP4647243B2 (ja) * 2004-05-24 2011-03-09 ルネサスエレクトロニクス株式会社 半導体装置
JP4906047B2 (ja) * 2005-11-28 2012-03-28 ルネサスエレクトロニクス株式会社 半導体装置

Also Published As

Publication number Publication date
KR20070055959A (ko) 2007-05-31
US7888788B2 (en) 2011-02-15
US20070120245A1 (en) 2007-05-31
JP2007149977A (ja) 2007-06-14
KR101277381B1 (ko) 2013-06-20
US7800214B2 (en) 2010-09-21
US20100314761A1 (en) 2010-12-16

Similar Documents

Publication Publication Date Title
JP4906047B2 (ja) 半導体装置
JP4647243B2 (ja) 半導体装置
KR102163707B1 (ko) 전자기간섭 차폐층을 갖는 반도체 패키지 및 테스트 방법
US7888795B2 (en) Semiconductor device
US8861215B2 (en) Semiconductor device
JP2010192680A (ja) 半導体装置
JP2012104707A (ja) 半導体パッケージ
US7456505B2 (en) Integrated circuit chip and integrated device
JP2012235048A (ja) 半導体装置
JP2012169468A (ja) 半導体装置及び電子装置
WO2014061426A1 (ja) 半導体装置
JP4707095B2 (ja) 半導体回路
JP5401699B2 (ja) 半導体装置
US8362614B2 (en) Fine pitch grid array type semiconductor device
CN106373937B (zh) 具有紧密布置的接触端子的半导体芯片
US20140175680A1 (en) Electrical characteristics of package substrates and semiconductor packages including the same
TWI471993B (zh) 半導體封裝及形成半導體封裝的方法
CN112151506B (zh) 电子封装结构及其晶片
JP5855913B2 (ja) 半導体装置
TWI703693B (zh) 電子封裝結構及其晶片
US8669593B2 (en) Semiconductor integrated circuit
JP2010245180A (ja) 半導体装置及びパッケージ基板
JP2010287733A (ja) 半導体装置
JP2008060215A (ja) 半導体装置
US20110063936A1 (en) Semiconductor device including plural electrode pads

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20081127

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20081127

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20090402

A711 Notification of change in applicant

Free format text: JAPANESE INTERMEDIATE CODE: A712

Effective date: 20100507

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20110421

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20110610

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20120105

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20120106

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20150120

Year of fee payment: 3

R150 Certificate of patent or registration of utility model

Ref document number: 4906047

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

S531 Written request for registration of change of domicile

Free format text: JAPANESE INTERMEDIATE CODE: R313531

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

LAPS Cancellation because of no payment of annual fees