JP4901745B2 - 集積回路のためのカーボンナノチューブを基材とする充填材 - Google Patents

集積回路のためのカーボンナノチューブを基材とする充填材 Download PDF

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JP4901745B2
JP4901745B2 JP2007539700A JP2007539700A JP4901745B2 JP 4901745 B2 JP4901745 B2 JP 4901745B2 JP 2007539700 A JP2007539700 A JP 2007539700A JP 2007539700 A JP2007539700 A JP 2007539700A JP 4901745 B2 JP4901745 B2 JP 4901745B2
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integrated circuit
circuit chip
carbon nanotube
substrate
filler
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JP2008519453A5 (enExample
JP2008519453A (ja
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ワイランド クリス
ヨハネス ヤコブス トーネン ヘンドリクス
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台灣積體電路製造股▲ふん▼有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
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    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/563—Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
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    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293—Organic, e.g. plastic
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    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
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    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
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    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/29393—Base material with a principal constituent of the material being a solid not provided for in groups H01L2224/293 - H01L2224/29391, e.g. allotropes of carbon, fullerene, graphite, carbon-nanotubes, diamond
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    • H01L2224/732—Location after the connecting process
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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Materials Engineering (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Wire Bonding (AREA)
JP2007539700A 2004-11-04 2005-11-04 集積回路のためのカーボンナノチューブを基材とする充填材 Expired - Lifetime JP4901745B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US62545204P 2004-11-04 2004-11-04
US60/625,452 2004-11-04
PCT/IB2005/053623 WO2006048844A1 (en) 2004-11-04 2005-11-04 Carbon nanotube-based filler for integrated circuits

Publications (3)

Publication Number Publication Date
JP2008519453A JP2008519453A (ja) 2008-06-05
JP2008519453A5 JP2008519453A5 (enExample) 2012-01-26
JP4901745B2 true JP4901745B2 (ja) 2012-03-21

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US (1) US20110156255A1 (enExample)
EP (2) EP1810324A1 (enExample)
JP (1) JP4901745B2 (enExample)
KR (1) KR101183754B1 (enExample)
CN (1) CN100521126C (enExample)
TW (1) TWI393226B (enExample)
WO (1) WO2006048844A1 (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070145097A1 (en) 2005-12-20 2007-06-28 Intel Corporation Carbon nanotubes solder composite for high performance interconnect
US7781260B2 (en) * 2007-09-11 2010-08-24 Intel Corporation Methods of forming nano-coatings for improved adhesion between first level interconnects and epoxy under-fills in microelectronic packages and structures formed thereby
US9041228B2 (en) 2008-12-23 2015-05-26 Micron Technology, Inc. Molding compound including a carbon nano-tube dispersion
JP4913853B2 (ja) * 2009-08-31 2012-04-11 Ｓｍｋ株式会社 微細コネクタ
US20110309481A1 (en) * 2010-06-18 2011-12-22 Rui Huang Integrated circuit packaging system with flip chip mounting and method of manufacture thereof
TWI452960B (zh) * 2010-11-25 2014-09-11 光宏精密股份有限公司 具有熱傳導性質的模塑互連組件及其製造方法
CN103311195A (zh) * 2012-03-15 2013-09-18 南亚科技股份有限公司 散热结构
WO2013142074A2 (en) * 2012-03-21 2013-09-26 Applied Nanotech Holdings, Inc. Polymer composites with silicon dioxide particles
US9321245B2 (en) 2013-06-24 2016-04-26 Globalfoundries Inc. Injection of a filler material with homogeneous distribution of anisotropic filler particles through implosion
US20170141007A1 (en) * 2015-11-17 2017-05-18 Advanced Semiconductor Engineering, Inc. Filler compositions and underfill compositions and molding compounds including the same for preparing semiconductor packages
WO2025245156A1 (en) * 2024-05-23 2025-11-27 Micron Technology, Inc. Method of forming stacked semiconductor devices with carbon nanofiber structures and associated systems and methods

Family Cites Families (43)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL7614456A (nl) * 1976-12-28 1978-06-30 Stamicarbon Kringloopproces voor de bereiding en verwerking van een hydroxylammoniumzoutoplossing.
US5371404A (en) * 1993-02-04 1994-12-06 Motorola, Inc. Thermally conductive integrated circuit package with radio frequency shielding
US5641997A (en) * 1993-09-14 1997-06-24 Kabushiki Kaisha Toshiba Plastic-encapsulated semiconductor device
DE69514201T2 (de) * 1994-11-24 2000-08-03 Dow Corning Toray Silicone Co., Ltd. Verfahren zur Herstellung eines Halbleiterbauelements
DE69618458T2 (de) * 1995-05-22 2002-11-07 Hitachi Chemical Co., Ltd. Halbleiterteil mit einem zu einem verdrahtungsträger elektrisch verbundenem chip
WO1996042107A1 (fr) * 1995-06-13 1996-12-27 Hitachi Chemical Company, Ltd. Dispositif a semi-conducteurs, tableau de connexions servant a monter ce dispositif et son procede de fabrication
US5880530A (en) * 1996-03-29 1999-03-09 Intel Corporation Multiregion solder interconnection structure
JPH1154662A (ja) * 1997-08-01 1999-02-26 Nec Corp フリップチップ樹脂封止構造及び樹脂封入方法
US6156256A (en) * 1998-05-13 2000-12-05 Applied Sciences, Inc. Plasma catalysis of carbon nanofibers
US6060777A (en) * 1998-07-21 2000-05-09 Intel Corporation Underside heat slug for ball grid array packages
JP2000113919A (ja) * 1998-08-03 2000-04-21 Sony Corp 電気的接続装置と電気的接続方法
WO2000033375A1 (fr) * 1998-12-02 2000-06-08 Seiko Epson Corporation Couche conductrice anisotrope, puce a semi-conducteur et procede de conditionnement
US6322713B1 (en) * 1999-07-15 2001-11-27 Agere Systems Guardian Corp. Nanoscale conductive connectors and method for making same
US6440560B1 (en) * 1999-07-26 2002-08-27 International Business Machines Corporation Nanoparticles formed with rigid connector compounds
SE9903242D0 (sv) * 1999-09-13 1999-09-13 Acreo Ab A semiconductor device
US6373142B1 (en) * 1999-11-15 2002-04-16 Lsi Logic Corporation Method of adding filler into a non-filled underfill system by using a highly filled fillet
US6256996B1 (en) * 1999-12-09 2001-07-10 International Business Machines Corporation Nanoscopic thermoelectric coolers
US7557452B1 (en) * 2000-06-08 2009-07-07 Micron Technology, Inc. Reinforced, self-aligning conductive structures for semiconductor device components and methods for fabricating same
US6569753B1 (en) * 2000-06-08 2003-05-27 Micron Technology, Inc. Collar positionable about a periphery of a contact pad and around a conductive structure secured to the contact pads, semiconductor device components including same, and methods for fabricating same
FR2813146A1 (fr) * 2000-08-21 2002-02-22 Orient Semiconductor Elect Ltd Amelioration de la structure thermo-dissipative d'un module de puce a protuberances
TW464927B (en) * 2000-08-29 2001-11-21 Unipac Optoelectronics Corp Metal bump with an insulating sidewall and method of fabricating thereof
JP4759122B2 (ja) * 2000-09-12 2011-08-31 ポリマテック株式会社 熱伝導性シート及び熱伝導性グリス
JP2002121404A (ja) * 2000-10-19 2002-04-23 Polymatech Co Ltd 熱伝導性高分子シート
JP2002146672A (ja) * 2000-11-06 2002-05-22 Polymatech Co Ltd 熱伝導性充填剤及び熱伝導性接着剤並びに半導体装置
US6441483B1 (en) * 2001-03-30 2002-08-27 Micron Technology, Inc. Die stacking scheme
US6674172B2 (en) * 2001-05-08 2004-01-06 International Business Machines Corporation Flip-chip package with underfill having low density filler
JP2002341060A (ja) * 2001-05-11 2002-11-27 Seiko Instruments Inc 複合電気部品、地板構造体及びこれを用いた電子時計
JP2002363395A (ja) * 2001-05-31 2002-12-18 Toray Ind Inc 封止用樹脂組成物、成形品および電子封止部品
DE10200648A1 (de) * 2002-01-10 2003-07-24 Inst Neue Mat Gemein Gmbh Verfahren zur Herstellung Optischer Elemente mit Gradientenstruktur
JP2003246927A (ja) * 2002-02-26 2003-09-05 Kanegafuchi Chem Ind Co Ltd ポリイミド樹脂組成物、ポリイミドフィルム、ポリイミド管状物及び電子写真用管状物
US6548313B1 (en) * 2002-05-31 2003-04-15 Intel Corporation Amorphous carbon insulation and carbon nanotube wires
JP2004051852A (ja) * 2002-07-22 2004-02-19 Polymatech Co Ltd 熱伝導性高分子成形体及びその製造方法
WO2004015786A2 (en) * 2002-08-07 2004-02-19 Pieder Beeli Electrical and electro-mechanical applications of superconducting phenomena in carbon nanotubes
US6919420B2 (en) * 2002-12-05 2005-07-19 International Business Machines Corporation Acid-cleavable acetal and ketal based epoxy oligomers
US7250477B2 (en) * 2002-12-20 2007-07-31 General Electric Company Thermoset composite composition, method, and article
US7094679B1 (en) * 2003-03-11 2006-08-22 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Carbon nanotube interconnect
JP4889190B2 (ja) * 2003-04-16 2012-03-07 スリーエム イノベイティブ プロパティズ カンパニー アクリル系熱伝導性組成物及び熱伝導性シート
US6982492B2 (en) * 2003-10-23 2006-01-03 Intel Corporation No-flow underfill composition and method
US20060035413A1 (en) * 2004-01-13 2006-02-16 Cookson Electronics, Inc. Thermal protection for electronic components during processing
US20050247916A1 (en) * 2004-05-06 2005-11-10 Mccormick Demetrius Compositions for use in electronics devices
US7109591B2 (en) * 2004-06-04 2006-09-19 Hack Jonathan A Integrated circuit device
US7221046B2 (en) * 2004-10-21 2007-05-22 Intel Corporation System to control effective series resistance of power delivery circuit
US20090173516A1 (en) * 2005-04-22 2009-07-09 Burke Peter J Nanotubes as microwave frequency interconnects

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TW200633158A (en) 2006-09-16
EP2302669A1 (en) 2011-03-30
US20110156255A1 (en) 2011-06-30
TWI393226B (zh) 2013-04-11
EP1810324A1 (en) 2007-07-25
KR20070084429A (ko) 2007-08-24
KR101183754B1 (ko) 2012-09-17
JP2008519453A (ja) 2008-06-05
WO2006048844A1 (en) 2006-05-11
CN100521126C (zh) 2009-07-29

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