TWI393226B - 基於奈米管之填充物 - Google Patents
基於奈米管之填充物 Download PDFInfo
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Description
本發明係針對積體電路裝置及方法,且更特定言之係針對使用奈米管材料之積體電路模具或附著填充物。
諸如封膠及填底膠之用於積體電路晶片應用之填充物材料在製造及建構電路中扮演著重要角色。舉例而言,積體電路、覆晶型電路及其它電路經常安裝於基板上,其中一模具型材料囊封基板上之電路。對於某些應用,填充物材料作為填底膠使用於電路(例如,晶片)下方、諸如焊球型連接器之電路連接中及周圍。在囊封模具型應用或填底膠應用中,填充物材料起著將電路及/或晶片緊固於適當位置之作用。另外,填充物材料可用於電絕緣某些電路及連接器。
多種填充物材料已用於此等目的。矽係一類用於填底膠及封膠之填充物材料。矽通常混合於諸如環氧樹脂之另一材料中,且給予該材料用於具有積體電路及封裝之應用所需的特徵,諸如用於支撐此等電路及封裝之強度。另一類填充物材料為銀。銀亦通常與環氧樹脂混合,且經常用於將晶粒附著至封裝。
在許多電路應用中,管理由電路生成之熱係重要的。隨著積體電路裝置變得更小,電路徑封裝更為接近於一起,且因此顯著數量之電流流過較小區域。增加之密度及/或功率消耗通常導致增加之熱量生成,其對電路組件可能造成潛在的問題。
具有封膠、填底膠材料(處於晶片與封裝之間)及具有晶粒附著材料之填充物材料及應用的熱導率對於自晶片及封裝中之電路以及連接該等兩者之電路去除熱具有影響。矽石具有相對於例如諸如金屬之導電材料的通常較低之熱導率。對於此等特徵,自採用使用矽石填充物之封裝材料之電路充分地去除熱具有挑戰性。
在某些實例中,未充分去除熱可導致使用壽命及效能之問題。因為製造之積體電路裝置具有較高密度,所以此問題加劇。此外,因為需要積體電路具有較高效能,所以與熱問題相關之效能波動可導致效能問題。
此等及其它困難呈現對於建構用於多種應用之電路基板的挑戰。
本發明之各種態樣涉及可使用積體電路及其它裝置建構之基板及/或封裝。本發明例示於許多建構及應用中,其中一些概述如下。
本發明之各種應用係針對以碳奈米管增強之積體電路晶片封裝配置。在許多實例實施例中,以碳奈米管增強之材料經建構以促進在一支撐基板與一積體電路晶片之間的配置及關係。
根據一實例實施例,一積體電路介面型材料包括碳奈米管。該介面型材料促進該積體電路晶片在一具有支撐基板之配置中的結構支撐。
在本發明之另一實例實施例中,一積體電路晶片配置包括一以碳奈米管增強之封膠。一積體電路晶片耦接至一支撐基板。該封膠一般在該積體電路晶片及該支撐基板之一部分之上方。在某些應用中,封膠充分囊封積體電路晶片及在該晶片與支撐基板或其它組件之間的電連接。封膠中之碳奈米管材料促進自積體電路晶片及/或其電連接傳遞熱。
在本發明之另一實例實施例中,一積體電路晶片配置包括以碳奈米管增強之填底膠材料。一積體電路晶片經由積體電路晶片與一支撐基板之間的電導體耦接至該支撐基板。以碳奈米管增強之填底膠材料流動於積體電路晶片與基板之間,大體圍繞及支撐該等電導體。在填底膠材料中之碳奈米管材料促進自該等導體及/或該積體電路晶片及/或該支撐基板傳遞熱。
結合本發明之另一實例實施例,一以碳奈米管增強之接合材料用於將一積體電路晶片緊固至一支撐基板。該接合材料形成於積體電路晶片與支撐基板之間,且使該等兩者實體耦接。接合材料中之碳奈米管材料促進自積體電路晶片、支撐基板及/或其間之連接器傳遞熱。在一建構中,接合材料具有足以使該接合材料具有導電性之濃度的碳奈米管材料。
本發明之以上概述並非意欲描述本發明之每一所說明之實施例或每一建構。下面由圖式簡單說明及實施方式更加特定地例示此等實施例。
雖然本發明可服從於各種修正及替代形式,但是其之細節已藉由圖式中之實例而予以展示,且將詳細地描述。然而應瞭解,目的並非將本發明限制於所描述之特定實施例。相反,目的為涵蓋屬於如由附屬專利申請範圍所界定之本發明之範疇的所有修正、均等物及替代。
據信本發明可適用於涉及及/或得益於封裝材料(且特定言之得益於諸如與晶片封裝配置一起使用之模具或填充物材料的封裝材料)之多種電路及方法。雖然本發明不必受限於此等應用,但是經由對此環境中各實例之論述可最佳地獲得對本發明之各種態樣的瞭解。
根據本發明之一實例實施例,一碳奈米管型填充物材料係使用一積體電路晶片封裝配置而建構。各種應用涉及將一積體電路晶片緊固至一封裝型基板。其它應用涉及在電路之間建立介面(無需緊固),諸如在一晶片與封裝基板之間。其它應用涉及將一晶片緊固至一封裝型基板及在該晶片與該基板之間建立介面兩者。
在本發明之另一實例實施例中,一模具型碳奈米管化合物用於覆蓋及/或囊封在一封裝基板上之一積體電路晶片。該積體電路晶片通常配置於封裝基板上,其中電路將晶片連接至封裝以在其間傳遞訊號(意即,輸入及輸出)。模具型碳奈米管化合物形成於積體電路晶片及連接電路(例如,接合線(bondwire)、焊球及/或引線框)上方,且使晶片與任一連接器彼此電絕緣。模具中之碳奈米管促進傳遞熱遠離積體電路晶片及/或安裝有積體電路晶片之封裝基板。
在另一實例實施例中,一積體電路封裝介面材料包括碳奈米管填充物。該介面材料經調適成在積體電路晶片與封裝型基板經耦接於一起時填充其間之空隙。在某些應用中,介面材料填充圍繞積體電路晶片與封裝基板之間之電路連接的區域,諸如圍繞使用覆晶型應用建構之焊料凸塊。碳奈米管型材料經建構以傳導由使用該材料建構之積體電路晶片(或多個晶片)所生成的熱。
在一應用中,介面材料係一經組態以流動於積體電路晶片與封裝基板之間之填底膠材料。碳奈米管混合於整個填底膠材料中,選擇該填底膠材料以達成促進填充晶片與封裝之間之電路連接器周圍的空隙之流動特徵。填底膠材料可(例如)使用先前用於填底膠應用中之材料來建構。奈米管隨著填底膠材料流動至空隙中且促進傳遞熱遠離電路連接器,及視配置而促進傳遞熱遠離晶片及/或封裝。
在另一實例實施例中,碳奈米管用於支撐或硬挺如上文所論述之與積體電路晶片一起使用的基板型材料。諸如藉由在積體電路晶片與封裝基板之間形成緊固介面或藉由囊封封裝基板,以碳奈米管硬挺之材料經配置以使積體電路晶片與封裝基板緊固。
在某些應用中,以碳奈米管硬挺之材料提供充分支撐以維持在積體電路晶片與封裝基板之間的配置。舉例而言,相對於封裝基板,以碳奈米管硬挺之材料可經配置以提供固持積體電路晶片於適當位置之實體支撐的大部分。在其它應用中,以碳奈米管硬挺之材料提供超過75%之使積體電路晶片固持於適當位置的實體支撐。在此等應用中,實體支撐可與以碳奈米管硬挺之材料維持積體電路晶片與封裝基板有關之能力(意即,在無該材料之情況下晶片在較小壓力下將相對於封裝移動)有關。
在另一實例實施例中,一具有碳奈米管填充物之模具型材料經選擇性地置放而與諸如電路、電路組件、積體電路晶片及連接電路之熱生成組件相鄰。一般而言,模具型材料可使用囊封封膠、填底膠材料及晶粒附著材料中之一或多者來建構。模具型材料傳導由熱生成組件所生成之熱能。模具型材料諸如使用基板自身及/或封裝之其它部分、諸如使用用於將電路封裝組件接合在一起、用於囊封晶片或用於填充電路組件之間的空隙之材料而建構於電路基板之封裝中。在某些應用中,模具型材料經配置以傳導熱遠離特定電路。在其它應用中,模具型材料經配置以一般在特定層或基板中均勻地散熱。
多種類型之碳奈米管材料可用於本文所論述之各種應用中,且在特定應用中與其它材料混合以符合選定之需要。舉例而言,碳奈米管粉體、多壁及單壁碳奈米管及其它以碳奈米管為基礎之材料用於不同應用中。此等碳奈米管材料一般較小;意即,小於矽石或其它普通的填充物材料。
另外,可選擇碳奈米管材料之類型以特別地處理應用要求,諸如硬度、強度、熱導率、電導率(或其之缺乏)及使材料與諸如環氧樹脂或樹脂之其它材料混合的能力。舉例而言,在要求碳奈米管材料及混合有碳奈米管材料之材料流動之情況下,諸如在填底膠應用中,碳奈米管材料之尺寸理想地為較小以促進流動。在此方面,較小尺寸之碳奈米管粉體易於混合至填底膠型材料中。因此,選擇其中混合有碳奈米管材料之材料之類型以達成諸如強度、耐久性及易燃性之各種特徵。
在各種支撐及/或熱耗散實施例中,碳奈米管定向於特定之方向上以促進特殊支撐或熱耗散要求。在某些應用中,碳奈米管材料隨機地或均一地混合於諸如環氧樹脂或塑膠之整個模具型材料中。在其它應用中,碳奈米管配置於特定之定向上以達成用於支撐應用之特定的硬度及/或強度。
現參看圖式,圖1A根據本發明之一實例實施例展示具有碳奈米管填充物之基板型材料100的剖視圖。在基板型材料100中碳奈米管填充物展示為小圓,其中代表性填充物材料標為110。雖然填充物材料藉由實例展示為小圓,但是其可使用諸如粉體及單壁及/或多壁碳奈米管之多種類型的碳奈米管材料來建構。此外,所展示之配置亦係藉由實例,其中配置及置放碳奈米管填充物之多種方法可適用於此實施例。在此方面,在圖1A中以及如下文所論述之圖1B中之碳奈米管填充物的所展示形狀及配置係出於實例之目的且包含多種形狀及配置。
圖1B根據本發明之另一實例實施例展示具有碳奈米管及矽石填充物之基板型材料120的剖視圖。基板型材料120與圖1A中之材料100類似,除碳奈米管填充物以外還具有矽石填充物。與在圖1A中所展示之類似,小空心圓用於展示碳奈米管填充物之實例表示,其中代表性碳奈米管填充物標為130。帶陰影線之小圓用於展示矽石填充物之實例表示,其中代表性矽石填充物標為132。
圖1A之基板型材料100及圖1B之基板型材料120可諸如使用囊封封膠、晶粒附著材料及填底膠而建構於多種應用中。在此方面,材料100及120可使用本文所描述之各種實例來建構,包括下文所論述之圖式。
選擇圖1A及1B中分別展示之基板型材料100及120中之碳奈米管填充物(130)及/或矽石填充物(132)的濃度以滿足各種條件。舉例而言,對於需要較高熱傳遞及耐受電導率之應用而言,碳奈米管填充物之濃度相對較高。在基板型材料不可導電之應用中(例如,在填底膠應用中),奈米管填充物之濃度保持充分低以抑制電導率。對於關於填充物應用之總體資訊及對於與可結合本文所論述之此及/或其它實施例而建構之填充物濃度相關的傳導率之特殊資訊,可參考Patrick Collins及John Hagerstrom之"Creating High Performance Conductive Composites with Carbon Nanotubes",其全部內容以引用的方式併入本文中。
在一建構中,藉由形成具有充分低濃度之碳奈米管填充物材料(圖1A之110、圖1B之130)來抑制電導率。相對於基板型材料與圖1B之實例中之矽石(或其它)填充物材料之組合物來控制此碳奈米管填充物濃度。舉例而言,在基板型材料一般電絕緣之情況下,可建構較高濃度之碳奈米管材料,同時將整個基板材料維持於一一般非導電之配置中。
可獨立於或相對於諸如矽石之其它填充物材料來建構碳奈米管材料之濃度。舉例而言,在某些應用中,維持特定數量之組合填充物,其中相對於矽石填充物選擇碳奈米管填充物之濃度(例如,較少之碳奈米管填充物意謂較多之矽石填充物)。相對於矽石填充物提高或降低碳奈米管填充物之濃度以相應提高或降低建構有填充物之基板型材料的傳導率。
選擇分別用於圖1A及1B中之基板型材料100或120的材料(包圍填充物)以滿足特定應用之要求。舉例而言,在要求基板型材料支撐積體電路晶片(諸如藉由將晶片緊固至封裝)之情況下,選擇用於達成附著型特徵之材料。在要求基板型材料流動之情況下,可根據流動性選擇材料。對於得益於較強連接之應用,可使用環氧樹脂型材料。在得益於較不強連接或較軟附著之應用中,可使用低溫熱塑性材料。
圖2根據本發明之另一實例實施例展示使用碳奈米管填充物材料之覆晶裝置200。覆晶裝置200包括反向或倒裝、電路側向下安裝至封裝基板210上之積體電路晶片220(覆晶)。相對於具有面向上之電路側之習知定向的晶片,此方法使得覆晶220中之電路更加接近於至封裝基板210之連接,從而減小連接電路之長度,且因此促進增加裝置200之速度。
一串連接器連接覆晶220與封裝基板210,其包括處於覆晶220相對兩端處並分別標為230及232之代表性習知焊球連接器。填底膠材料240定位於覆晶220與封裝基板210之間,且填充包括彼等標為230及232之連接器周圍的空隙。
填底膠材料240有助於密封覆晶220與封裝基板210之間之連接,以及密封在覆晶及封裝基板自身上之任一電路介面(例如,襯墊)。在此方面,填底膠材料240達到所要求之非導電程度以抑制在覆晶220與封裝基板210之間的導電電路之間的電傳導。
以將填底膠維持於一般非導電狀態之方式,在特定濃度下使用諸如環氧樹脂之材料來建構填底膠材料240中之碳奈米管填充物材料。例如如在圖1A及/或1B中展示,混合碳奈米管填充物材料。使用此方法,碳奈米管填充物材料增強填底膠材料240之熱導率,同時維持填底膠之一般非導電之特徵。
在一建構中,連接器(包括焊球230及232)塗覆有或另外地配置有諸如氧化物之電絕緣材料,該電絕緣材料使得連接器自填底膠材料240分離並電絕緣。因此填底膠240中之碳奈米管材料較小可能地自絕緣電路組件傳導電流。在某些實例中,絕緣材料使電路自填底膠充分絕緣,使得形成之填底膠具有可使填底膠導電之相對較高濃度的碳奈米管材料。
在另一建構中,填底膠材料240經調適成支撐包括代表性習知焊球連接器230及232之電路連接器。由填底膠材料240(具有碳奈米管填充物)提供之結構支撐抗衡施加至電路連接器上之應力且有助於防止破裂及其它損害。舉例而言,在覆晶220與封裝基板210之熱膨脹係數不同之情況下,當覆晶裝置200之運作溫度改變時可將應力施加至電路連接器上。在無填底膠材料之支撐之情況下,在高溫運作下熱應力可引起電路連接器破裂。在此方面,使用碳奈米管填充物加強填底膠材料240以減輕(例如,抗衡或防止)熱誘發之應力破裂。
圖3根據本發明之另一實例實施例展示使用以碳奈米管填充之封膠的積體電路裝置300。裝置300包括BGA型基板350,其中一積體電路晶片340配置於該基板上。BGA型基板接著使用焊球連接器串390經由配置360耦接至外部電路。具有碳奈米管填充物之封膠330將積體電路晶片340緊固至BGA型基板350,且經由碳奈米管填充物促進自積體電路晶片、基板及其之電連接傳遞熱。封膠進一步密封及/或保護在積體電路晶片340與BGA型基板350之間的電連接,其中代表性連接器380及382藉由實例而展示。
在裝置300中之選定介面處添加任意以碳奈米管填充之介面材料。藉由實例,展示介面區域372(處於積體電路晶片與封膠330之間)、374(處於積體電路晶片與BGA型基板350之間)及376(處於BGA型基板與外部電路配置360之間)。此等介面材料促進介面材料內之熱擴散以及遠離裝置300之熱能傳導。與所示之區域372、374及376結合或分離之其它介面類型應用(諸如關於圖1所描述之填底膠方法)可視情況使用裝置300實施。舉例而言,填底膠型方法可使用BGA型基板與外部電路配置360之間之區域376實施,並填充焊球連接器串390周圍之空隙。
在區域374處之以碳奈米管填充之介面材料可視情況建構為晶粒附著化合物,其中材料將積體電路晶片340(晶粒)實體緊固至BGA型基板350。用於區域374中之與碳奈米管填充物一起使用之材料因此在結構上係硬性的且耦接至積體電路晶片340及BGA型基板350兩者。
選擇封膠330中之碳奈米管填充物之組份及配置以滿足各種應用要求。為滿足此等要求,碳奈米管填充物可混合於封膠330中及/或與諸如在圖1A及/或1B中展示之其它填充物材料組合。在一建構中,碳奈米管填充物在封膠330中之濃度足以增強封膠中之電導率。封膠330與導電電路相鄰之部分得以絕緣。為使封膠導電所需要之相對較高濃度之碳奈米管填充物亦促進熱導率,且因此促進自裝置300去除熱。
在一應用中,封膠330之碳奈米管填充物之濃度充分地高以用促進封膠中之"傳輸線效應"之方式(類似於例如通常與同軸電纜相關聯之傳輸線效應)來促進傳導率。此充分之濃度與特定應用之特徵相關,諸如封膠之厚度、任一相關電場之強度及電路之接近性。相對於導電封膠330產生一電場,且該電場與積體電路晶片340一起用於多種目的。舉例而言,根據諸如電流通過量、碳奈米管填充物之位置及電流頻率之特徵,封膠330中通過之電流引起與積體電路晶片340中之電流的交互作用。因此選擇此等特徵以滿足每一特定應用所需之交互作用,例如,以使任一產生之電場在相鄰電路中引起特徵反應。
選擇用於封膠330之塊狀材料(固持碳奈米管填充物之材料)以滿足應用要求,諸如關於熱導率或電導率之彼等要求,以及關於強度、耐久性及易燃性之實體要求。諸如環氧樹脂、聯苯及其它塑膠之材料為用於各種應用之實例。
在各種應用中,選擇具有碳奈米管填充物之塊狀材料之與製造相關的特徵以處理諸如接合線變形(清掃)及與置放裝置300之應力相關之其它者的其它挑戰。舉例而言,碳奈米管填充物材料之尺寸一般維持較小以促進封膠330圍繞諸如連接器380及382之電路連接器流動。
在本發明之另一實例實施例中,使用具有本質上ESD(靜電放電)保護之碳奈米管填充物濃度之化合物材料來建構封膠。使用圖3作為實例,積體電路晶片340由具有封膠330之絕緣化合物囊封及/或塗覆有包括碳奈米管之塑膠。封膠(及碳奈米管塗覆(若可適用))大體缺乏磁性粒子,其使與塗覆之極性誘導交互作用最小。當裝置300運作時封膠(或碳奈米管塗覆)促進相對較小之電流洩漏。此方法適用於多種裝置,其中本文中結合圖3之描述為一特定實例。使用此方法易於建構包括應用圖1A及1B中之配置之彼等應用的其它應用。
上文描述之及在圖式中展示之各種實施例僅以說明之方式提供且不應當解釋為限制本發明。基於上文之論述及說明,熟習此項技術者將易於認識到,在未嚴格遵循本文所說明及描述之實例實施例及應用之情況下,可對本發明進行各種修正及改變。舉例而言,可使用不同於碳或除碳以外之材料(諸如硼)來建構碳奈米管。作為另一實例,替代於碳奈米管填充物或除使用碳奈米管填充物以外,可使用具有類似於碳奈米管之特徵之填充物材料(例如,具有近3000 W/mK之熱導率及約0.25 ppm之熱膨脹係數的材料)。另外,藉由實例論述之基板型材料可使用眾多不同類型之材料來建構,該等材料可單獨使用及/或彼此結合使用或與上文所描述之材料結合使用。此等修正及改變並不脫離本發明之實際精神及範疇。
100...基板型材料
110...碳奈米管填充材料
120...基板型材料
130...碳奈米管填充物
132...矽石填充物
200...積體電路晶片配置/覆晶裝置
210...支撐基板/封裝基板
220...積體電路晶片/覆晶
230...焊球連接器/電導體
232...焊球連接器/電導體
240...填底膠材料
300...積體電路晶片配置
330...封膠材料
340...積體電路晶片
350...支撐基板/BGA型基板
360...外部電路配置
372...介面區域
374...晶粒附著/介面區域
376...介面區域
380...連接器
382...連接器
390...焊球連接器串
圖1A根據本發明之一實例實施例展示具有碳奈米管填充物之基板型材料的剖示圖;圖1B根據本發明之另一實例實施例展示具有碳奈米管及矽石填充物之基板型材料的剖示圖;圖2根據本發明之另一實例實施例展示具有碳奈米管填底膠材料之覆晶裝置;及圖3根據本發明之另一實例實施例展示具有BGA型基板及耦接至該BGA型基板之積體電路晶片的積體電路裝置。
100...基板型材料
110...碳奈米管填充材料
Claims (29)
- 一種積體電路晶片配置(200),其包含:一積體電路晶片(220);一支撐基板(210),其經配置以實體支撐該積體電路晶片;及一包括碳奈米管材料之介面區域(240),該介面區域經組態及配置以促進該積體電路晶片在一具有該支撐基板之配置中的結構支撐,其中該介面區域係一將該積體電路晶片實質地耦接至該支撐基板之耦接材料,該積體電路晶片配置進一步包含:延伸通過該介面區域之至少一部分之至少一電路;及經組態及配置以使該介面區域中之碳奈米管自該至少一電路電絕緣之絕緣材料。
- 如請求項1之配置,其中該介面區域係一將該積體電路晶片實質地囊封於該支撐基板上之封膠。
- 如請求項2之配置,其中該介面區域經組態及配置以將該積體電路晶片實質地耦接至該支撐基板。
- 如請求項1之配置,其中該介面區域係一經組態及配置以在該積體電路晶片與該支撐基板之間建立介面且與該積體電路晶片及該支撐基板接觸之填底膠材料。
- 如請求項4之配置,其中該積體電路晶片及該支撐基板經由一導電介面材料而實體耦接及電耦接,且其中該填底膠材料經配置為與該導電介面材料相鄰且經組態及配置以藉由傳導熱遠離該導電介面材料來促進該積體電路晶片在其具有該支撐基板之配置中的該結構支撐。
- 如請求項5之配置,其中該填底膠材料經組態及配置以 填充該導電介面材料、該積體電路晶片與該支撐基板之間之間隔。
- 如請求項6之配置,其中該填底膠材料經組態及配置以流動至該導電介面材料、該積體電路晶片與該支撐基板之間之間隔中。
- 如請求項5之配置,其中該填底膠材料經組態及配置以在該導電介面材料之不同部分之間抑制電傳導。
- 如請求項4之配置,其中該填底膠材料經組態及配置以在結構上支撐在該積體電路晶片與該支撐基板之間之電路連接器,以在涉及熱相關應力之應用期間減輕該等電路連接器之破裂。
- 如請求項1之配置,其中該介面區域在該積體電路晶片與該支撐基板之間包括一導電材料層。
- 如請求項10之配置,其中該導電材料層包括經組態及配置以在該積體電路晶片與該支撐基板之間傳導電流的眾多碳奈米管結構。
- 如請求項1之配置,其中該介面材料具有一分級濃度之碳奈米管填充物,該碳奈米管填充物在與該積體電路晶片配置中之電路鄰近處具有一較低濃度以在該奈米管填充物與該電路之間抑制電傳導,且在遠離該電路處具有一較高濃度以促進遠離該電路之熱的熱傳導。
- 如請求項1之配置,其中該介面材料具有充分之碳奈米管材料以傳導電流,且其中該碳奈米管材料經進一步組態及配置以在該積體電路晶片中引起一傳輸線效應。
- 一種積體電路晶片配置(300),其包含:一支撐基板(350);一耦接至該支撐基板之積體電路晶片(340);及一在該積體電路晶片及該基板之至少一部分上之封膠材料(330),該封膠材料包括促進該積體電路晶片在一具有該支撐基板之配置中之結構支撐的碳奈米管材料,其中該封膠包括:在該封膠之一非導電區域中之一相對較低濃度的碳奈米管材料,該非導電區域與該積體電路晶片之導電部分直接相鄰;及在該封膠之一導電區域中之一相對較高濃度的碳奈米管材料,該導電區域藉由該非導電區域自該積體電路晶片之該等導電部分分離。
- 如請求項14之配置,其中該封膠材料包括混合於一模具基板中之碳奈米管填充物。
- 如請求項15之配置,其中該碳奈米管填充物係碳奈米管粉體。
- 如請求項15之配置,其中該碳奈米管填充物在該模具基板中具有一濃度,該碳奈米管填充物連同該模具基板係大體非導電的。
- 如請求項17之配置,其中該封膠經配置以抑制自該積體電路晶片及至其之電連接的電傳導。
- 如請求項14之配置,其中該封膠包括一混合於一模具材料中之填充物材料,該填充物材料包括矽石及碳奈米管填充物材料,碳奈米管與矽石填充物之比率低於一臨限比率,在該臨限比率下該封膠將係電傳導的。
- 如請求項14之配置,其進一步包含:一電絕緣材料, 其經配置以使該積體電路晶片之電導體自該封膠材料電絕緣;且其中該碳奈米管材料在該封膠材料中具有一充分之濃度,以在該封膠中傳導電流並引起該積體電路晶片之一傳輸線效應。
- 一種積體電路晶片配置(200),其包含:一支撐基板(210);一積體電路晶片(220),其經由在該積體電路晶片與該支撐基板之間之電導體(230,232)耦接至該支撐基板;及一填底膠材料(240),其處於該積體電路晶片與該基板之間,該填底膠材料包括碳奈米管材料,該碳奈米管材料藉由支撐該等電導體而促進在一具有該支撐基板之配置中的該積體電路晶片之間的結構關係,其中該積體電路晶片及該支撐基板經配置於一覆晶封裝配置中,其中該積體電路晶片之一電路側向下配置於該支撐基板上且在其間形成電連接。
- 如請求項21之配置,其中該填底膠材料經調適成圍繞該等電導體流動。
- 如請求項22之配置,其中該填底膠材料經調適成填充該積體電路晶片與該支撐基板之間之空隙且圍繞該等電導體。
- 如請求項21之配置,其中該碳奈米管材料在一抑制該等電導體與該碳奈米管材料之間之電導率的濃度及配置下混合於該填底膠材料中。
- 一種積體電路晶片配置,其包含:一支撐基板;一耦接至該支撐基板之積體電路晶片;及一處於該積體電路晶片與該基板之間的接合材料,該接合材料包括碳奈米管材料且 促進該積體電路晶片在一具有該支撐基板之配置中的附著。
- 如請求項25之配置,其中該接合材料包括一經組態及配置以固持該碳奈米管材料之塑膠型材料。
- 如請求項25之配置,其中該碳奈米管材料在一充分之濃度處以使該接合材料電傳導。
- 如請求項25之配置,其中該碳奈米管材料在一大體較低之濃度處以抑制與該積體電路晶片之電導率。
- 如請求項25之配置,其中該碳奈米管材料經配置於該接合材料中以傳導熱遠離該積體電路晶片及該支撐基板中之至少一者。
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- 2005-11-04 WO PCT/IB2005/053623 patent/WO2006048844A1/en active Application Filing
- 2005-11-04 US US11/718,711 patent/US20110156255A1/en not_active Abandoned
- 2005-11-04 EP EP11150596A patent/EP2302669A1/en not_active Ceased
- 2005-11-04 EP EP05800507A patent/EP1810324A1/en not_active Ceased
- 2005-11-04 KR KR1020077011528A patent/KR101183754B1/ko active IP Right Grant
- 2005-11-04 CN CNB2005800456738A patent/CN100521126C/zh active Active
- 2005-11-04 JP JP2007539700A patent/JP4901745B2/ja active Active
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Also Published As
Publication number | Publication date |
---|---|
CN101095219A (zh) | 2007-12-26 |
JP4901745B2 (ja) | 2012-03-21 |
TW200633158A (en) | 2006-09-16 |
US20110156255A1 (en) | 2011-06-30 |
WO2006048844A1 (en) | 2006-05-11 |
EP2302669A1 (en) | 2011-03-30 |
KR101183754B1 (ko) | 2012-09-17 |
JP2008519453A (ja) | 2008-06-05 |
CN100521126C (zh) | 2009-07-29 |
KR20070084429A (ko) | 2007-08-24 |
EP1810324A1 (en) | 2007-07-25 |
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