KR101183754B1 - 집적 회로 칩 장치 - Google Patents
집적 회로 칩 장치 Download PDFInfo
- Publication number
- KR101183754B1 KR101183754B1 KR1020077011528A KR20077011528A KR101183754B1 KR 101183754 B1 KR101183754 B1 KR 101183754B1 KR 1020077011528 A KR1020077011528 A KR 1020077011528A KR 20077011528 A KR20077011528 A KR 20077011528A KR 101183754 B1 KR101183754 B1 KR 101183754B1
- Authority
- KR
- South Korea
- Prior art keywords
- integrated circuit
- circuit chip
- delete delete
- carbon nanotube
- filler
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/563—Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
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- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/293—Organic, e.g. plastic
- H01L23/295—Organic, e.g. plastic containing a filler
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- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
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- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
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- H01L2224/29001—Core members of the layer connector
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- H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
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- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
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- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29199—Material of the matrix
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- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29299—Base material
- H01L2224/29393—Base material with a principal constituent of the material being a solid not provided for in groups H01L2224/293 - H01L2224/29391, e.g. allotropes of carbon, fullerene, graphite, carbon-nanotubes, diamond
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- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
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- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00013—Fully indexed content
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- H01L2924/01005—Boron [B]
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- H01L2924/06—Polymers
- H01L2924/0665—Epoxy resin
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- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
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- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
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- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- H01L2924/30—Technical effects
- H01L2924/35—Mechanical effects
- H01L2924/351—Thermal stress
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Materials Engineering (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Carbon And Carbon Compounds (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Wire Bonding (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US62545204P | 2004-11-04 | 2004-11-04 | |
| US60/625,452 | 2004-11-04 | ||
| PCT/IB2005/053623 WO2006048844A1 (en) | 2004-11-04 | 2005-11-04 | Carbon nanotube-based filler for integrated circuits |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20070084429A KR20070084429A (ko) | 2007-08-24 |
| KR101183754B1 true KR101183754B1 (ko) | 2012-09-17 |
Family
ID=35784720
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020077011528A Expired - Lifetime KR101183754B1 (ko) | 2004-11-04 | 2005-11-04 | 집적 회로 칩 장치 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US20110156255A1 (enExample) |
| EP (2) | EP1810324A1 (enExample) |
| JP (1) | JP4901745B2 (enExample) |
| KR (1) | KR101183754B1 (enExample) |
| CN (1) | CN100521126C (enExample) |
| TW (1) | TWI393226B (enExample) |
| WO (1) | WO2006048844A1 (enExample) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070145097A1 (en) | 2005-12-20 | 2007-06-28 | Intel Corporation | Carbon nanotubes solder composite for high performance interconnect |
| US7781260B2 (en) * | 2007-09-11 | 2010-08-24 | Intel Corporation | Methods of forming nano-coatings for improved adhesion between first level interconnects and epoxy under-fills in microelectronic packages and structures formed thereby |
| US9041228B2 (en) | 2008-12-23 | 2015-05-26 | Micron Technology, Inc. | Molding compound including a carbon nano-tube dispersion |
| JP4913853B2 (ja) * | 2009-08-31 | 2012-04-11 | Smk株式会社 | 微細コネクタ |
| US20110309481A1 (en) * | 2010-06-18 | 2011-12-22 | Rui Huang | Integrated circuit packaging system with flip chip mounting and method of manufacture thereof |
| TWI452960B (zh) * | 2010-11-25 | 2014-09-11 | 光宏精密股份有限公司 | 具有熱傳導性質的模塑互連組件及其製造方法 |
| CN103311195A (zh) * | 2012-03-15 | 2013-09-18 | 南亚科技股份有限公司 | 散热结构 |
| WO2013142074A2 (en) * | 2012-03-21 | 2013-09-26 | Applied Nanotech Holdings, Inc. | Polymer composites with silicon dioxide particles |
| US9321245B2 (en) | 2013-06-24 | 2016-04-26 | Globalfoundries Inc. | Injection of a filler material with homogeneous distribution of anisotropic filler particles through implosion |
| US20170141007A1 (en) * | 2015-11-17 | 2017-05-18 | Advanced Semiconductor Engineering, Inc. | Filler compositions and underfill compositions and molding compounds including the same for preparing semiconductor packages |
| WO2025245156A1 (en) * | 2024-05-23 | 2025-11-27 | Micron Technology, Inc. | Method of forming stacked semiconductor devices with carbon nanofiber structures and associated systems and methods |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002146672A (ja) | 2000-11-06 | 2002-05-22 | Polymatech Co Ltd | 熱伝導性充填剤及び熱伝導性接着剤並びに半導体装置 |
| JP2002363395A (ja) | 2001-05-31 | 2002-12-18 | Toray Ind Inc | 封止用樹脂組成物、成形品および電子封止部品 |
Family Cites Families (41)
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| NL7614456A (nl) * | 1976-12-28 | 1978-06-30 | Stamicarbon | Kringloopproces voor de bereiding en verwerking van een hydroxylammoniumzoutoplossing. |
| US5371404A (en) * | 1993-02-04 | 1994-12-06 | Motorola, Inc. | Thermally conductive integrated circuit package with radio frequency shielding |
| US5641997A (en) * | 1993-09-14 | 1997-06-24 | Kabushiki Kaisha Toshiba | Plastic-encapsulated semiconductor device |
| DE69514201T2 (de) * | 1994-11-24 | 2000-08-03 | Dow Corning Toray Silicone Co., Ltd. | Verfahren zur Herstellung eines Halbleiterbauelements |
| DE69618458T2 (de) * | 1995-05-22 | 2002-11-07 | Hitachi Chemical Co., Ltd. | Halbleiterteil mit einem zu einem verdrahtungsträger elektrisch verbundenem chip |
| WO1996042107A1 (fr) * | 1995-06-13 | 1996-12-27 | Hitachi Chemical Company, Ltd. | Dispositif a semi-conducteurs, tableau de connexions servant a monter ce dispositif et son procede de fabrication |
| US5880530A (en) * | 1996-03-29 | 1999-03-09 | Intel Corporation | Multiregion solder interconnection structure |
| JPH1154662A (ja) * | 1997-08-01 | 1999-02-26 | Nec Corp | フリップチップ樹脂封止構造及び樹脂封入方法 |
| US6156256A (en) * | 1998-05-13 | 2000-12-05 | Applied Sciences, Inc. | Plasma catalysis of carbon nanofibers |
| US6060777A (en) * | 1998-07-21 | 2000-05-09 | Intel Corporation | Underside heat slug for ball grid array packages |
| JP2000113919A (ja) * | 1998-08-03 | 2000-04-21 | Sony Corp | 電気的接続装置と電気的接続方法 |
| WO2000033375A1 (fr) * | 1998-12-02 | 2000-06-08 | Seiko Epson Corporation | Couche conductrice anisotrope, puce a semi-conducteur et procede de conditionnement |
| US6322713B1 (en) * | 1999-07-15 | 2001-11-27 | Agere Systems Guardian Corp. | Nanoscale conductive connectors and method for making same |
| US6440560B1 (en) * | 1999-07-26 | 2002-08-27 | International Business Machines Corporation | Nanoparticles formed with rigid connector compounds |
| SE9903242D0 (sv) * | 1999-09-13 | 1999-09-13 | Acreo Ab | A semiconductor device |
| US6373142B1 (en) * | 1999-11-15 | 2002-04-16 | Lsi Logic Corporation | Method of adding filler into a non-filled underfill system by using a highly filled fillet |
| US6256996B1 (en) * | 1999-12-09 | 2001-07-10 | International Business Machines Corporation | Nanoscopic thermoelectric coolers |
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| US6569753B1 (en) * | 2000-06-08 | 2003-05-27 | Micron Technology, Inc. | Collar positionable about a periphery of a contact pad and around a conductive structure secured to the contact pads, semiconductor device components including same, and methods for fabricating same |
| FR2813146A1 (fr) * | 2000-08-21 | 2002-02-22 | Orient Semiconductor Elect Ltd | Amelioration de la structure thermo-dissipative d'un module de puce a protuberances |
| TW464927B (en) * | 2000-08-29 | 2001-11-21 | Unipac Optoelectronics Corp | Metal bump with an insulating sidewall and method of fabricating thereof |
| JP4759122B2 (ja) * | 2000-09-12 | 2011-08-31 | ポリマテック株式会社 | 熱伝導性シート及び熱伝導性グリス |
| JP2002121404A (ja) * | 2000-10-19 | 2002-04-23 | Polymatech Co Ltd | 熱伝導性高分子シート |
| US6441483B1 (en) * | 2001-03-30 | 2002-08-27 | Micron Technology, Inc. | Die stacking scheme |
| US6674172B2 (en) * | 2001-05-08 | 2004-01-06 | International Business Machines Corporation | Flip-chip package with underfill having low density filler |
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- 2005-11-04 EP EP05800507A patent/EP1810324A1/en not_active Ceased
- 2005-11-04 KR KR1020077011528A patent/KR101183754B1/ko not_active Expired - Lifetime
- 2005-11-04 WO PCT/IB2005/053623 patent/WO2006048844A1/en not_active Ceased
- 2005-11-04 EP EP11150596A patent/EP2302669A1/en not_active Ceased
- 2005-11-04 CN CNB2005800456738A patent/CN100521126C/zh not_active Expired - Lifetime
- 2005-11-04 JP JP2007539700A patent/JP4901745B2/ja not_active Expired - Lifetime
- 2005-11-04 US US11/718,711 patent/US20110156255A1/en not_active Abandoned
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| JP2002146672A (ja) | 2000-11-06 | 2002-05-22 | Polymatech Co Ltd | 熱伝導性充填剤及び熱伝導性接着剤並びに半導体装置 |
| JP2002363395A (ja) | 2001-05-31 | 2002-12-18 | Toray Ind Inc | 封止用樹脂組成物、成形品および電子封止部品 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101095219A (zh) | 2007-12-26 |
| TW200633158A (en) | 2006-09-16 |
| EP2302669A1 (en) | 2011-03-30 |
| US20110156255A1 (en) | 2011-06-30 |
| TWI393226B (zh) | 2013-04-11 |
| EP1810324A1 (en) | 2007-07-25 |
| KR20070084429A (ko) | 2007-08-24 |
| JP2008519453A (ja) | 2008-06-05 |
| WO2006048844A1 (en) | 2006-05-11 |
| JP4901745B2 (ja) | 2012-03-21 |
| CN100521126C (zh) | 2009-07-29 |
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