JP4818499B2 - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法 Download PDF

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Publication number
JP4818499B2
JP4818499B2 JP2000265567A JP2000265567A JP4818499B2 JP 4818499 B2 JP4818499 B2 JP 4818499B2 JP 2000265567 A JP2000265567 A JP 2000265567A JP 2000265567 A JP2000265567 A JP 2000265567A JP 4818499 B2 JP4818499 B2 JP 4818499B2
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JP
Japan
Prior art keywords
region
insulating film
forming
semiconductor substrate
resist mask
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2000265567A
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English (en)
Japanese (ja)
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JP2002076136A (ja
JP2002076136A5 (enExample
Inventor
弘和 佐山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Electronics Corp
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Renesas Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Electronics Corp filed Critical Renesas Electronics Corp
Priority to JP2000265567A priority Critical patent/JP4818499B2/ja
Priority to US09/796,597 priority patent/US6667206B2/en
Publication of JP2002076136A publication Critical patent/JP2002076136A/ja
Publication of JP2002076136A5 publication Critical patent/JP2002076136A5/ja
Application granted granted Critical
Publication of JP4818499B2 publication Critical patent/JP4818499B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0181—Manufacturing their gate insulating layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0184—Manufacturing their gate sidewall spacers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe

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  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP2000265567A 2000-09-01 2000-09-01 半導体装置の製造方法 Expired - Fee Related JP4818499B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2000265567A JP4818499B2 (ja) 2000-09-01 2000-09-01 半導体装置の製造方法
US09/796,597 US6667206B2 (en) 2000-09-01 2001-03-02 Method of manufacturing semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000265567A JP4818499B2 (ja) 2000-09-01 2000-09-01 半導体装置の製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2010099097A Division JP2010187013A (ja) 2010-04-22 2010-04-22 半導体装置の製造方法

Publications (3)

Publication Number Publication Date
JP2002076136A JP2002076136A (ja) 2002-03-15
JP2002076136A5 JP2002076136A5 (enExample) 2007-10-18
JP4818499B2 true JP4818499B2 (ja) 2011-11-16

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000265567A Expired - Fee Related JP4818499B2 (ja) 2000-09-01 2000-09-01 半導体装置の製造方法

Country Status (2)

Country Link
US (1) US6667206B2 (enExample)
JP (1) JP4818499B2 (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1253929C (zh) 2003-03-04 2006-04-26 松下电器产业株式会社 半导体装置及其制造方法
US7135373B2 (en) * 2003-09-23 2006-11-14 Texas Instruments Incorporated Reduction of channel hot carrier effects in transistor devices
US6927137B2 (en) * 2003-12-01 2005-08-09 Texas Instruments Incorporated Forming a retrograde well in a transistor to enhance performance of the transistor
JP2005209836A (ja) * 2004-01-22 2005-08-04 Toshiba Corp 半導体装置の製造方法
WO2007045658A1 (en) * 2005-10-18 2007-04-26 Stmicroelectronics Crolles 2 Sas Selective removal of a silicon oxide layer
JP5283827B2 (ja) * 2006-03-30 2013-09-04 富士通セミコンダクター株式会社 半導体装置の製造方法
JP2006339670A (ja) * 2006-08-21 2006-12-14 Fujitsu Ltd 半導体装置及びその製造方法
US7629655B2 (en) * 2007-03-20 2009-12-08 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device with multiple silicide regions
KR101095679B1 (ko) * 2008-12-26 2011-12-19 주식회사 하이닉스반도체 Ｐｍｏｓ 트랜지스터의 제조방법
US8592264B2 (en) * 2011-12-21 2013-11-26 International Business Machines Corporation Source-drain extension formation in replacement metal gate transistor device
CN103151388B (zh) 2013-03-05 2015-11-11 京东方科技集团股份有限公司 一种多晶硅薄膜晶体管及其制备方法、阵列基板

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5712548A (en) 1980-06-27 1982-01-22 Oki Electric Ind Co Ltd Manufacture of complementary type mos semiconductor device
US5153144A (en) * 1988-05-10 1992-10-06 Hitachi, Ltd. Method of making tunnel EEPROM
JPH04170067A (ja) 1990-11-01 1992-06-17 Nippon Sheet Glass Co Ltd Ｃｍｏｓトランジスタの製造方法
US5532176A (en) * 1992-04-17 1996-07-02 Nippondenso Co., Ltd. Process for fabricating a complementary MIS transistor
JPH0669231A (ja) 1992-08-12 1994-03-11 Yamaha Corp Ｍｏｓ型トランジスタの製法
JPH07307467A (ja) * 1994-05-13 1995-11-21 Fujitsu Ltd 半導体装置及びその製造方法
JPH0855914A (ja) * 1994-08-10 1996-02-27 Ricoh Co Ltd Ｃｍｏｓ半導体装置とその製造方法
US5405791A (en) * 1994-10-04 1995-04-11 Micron Semiconductor, Inc. Process for fabricating ULSI CMOS circuits using a single polysilicon gate layer and disposable spacers
JP3381110B2 (ja) * 1995-01-20 2003-02-24 ソニー株式会社 半導体装置の製造方法
JPH08241984A (ja) * 1995-03-03 1996-09-17 Hitachi Ltd 半導体装置の製造方法
JPH08321557A (ja) 1995-05-24 1996-12-03 Nec Corp Ｃｍｏｓ半導体装置の製造方法
JPH09205151A (ja) * 1996-01-26 1997-08-05 Sony Corp 相補型半導体装置の製造方法
JPH10261792A (ja) * 1997-03-18 1998-09-29 Hitachi Ltd 半導体装置およびその製造方法
US6221709B1 (en) * 1997-06-30 2001-04-24 Stmicroelectronics, Inc. Method of fabricating a CMOS integrated circuit device with LDD N-channel transistor and non-LDD P-channel transistor
US6137144A (en) * 1998-04-08 2000-10-24 Texas Instruments Incorporated On-chip ESD protection in dual voltage CMOS
JP3293567B2 (ja) * 1998-09-30 2002-06-17 日本電気株式会社 半導体装置の製造方法
US6235568B1 (en) * 1999-01-22 2001-05-22 Intel Corporation Semiconductor device having deposited silicon regions and a method of fabrication

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Publication number Publication date
US6667206B2 (en) 2003-12-23
US20020031883A1 (en) 2002-03-14
JP2002076136A (ja) 2002-03-15

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