JP4805831B2 - 半導体発光装置、照明モジュール、照明装置、表面実装部品、および表示装置 - Google Patents

半導体発光装置、照明モジュール、照明装置、表面実装部品、および表示装置 Download PDF

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Publication number
JP4805831B2
JP4805831B2 JP2006529398A JP2006529398A JP4805831B2 JP 4805831 B2 JP4805831 B2 JP 4805831B2 JP 2006529398 A JP2006529398 A JP 2006529398A JP 2006529398 A JP2006529398 A JP 2006529398A JP 4805831 B2 JP4805831 B2 JP 4805831B2
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light emitting
layer
side electrode
light
semiconductor
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Japanese (ja)
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JP2007529879A5 (enExample
JP2007529879A (ja
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秀男 永井
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Panasonic Corp
Panasonic Holdings Corp
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Panasonic Corp
Matsushita Electric Industrial Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8314—Electrodes characterised by their shape extending at least partially onto an outer side surface of the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls

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  • Led Devices (AREA)
  • Non-Portable Lighting Devices Or Systems Thereof (AREA)
JP2006529398A 2004-03-18 2005-03-16 半導体発光装置、照明モジュール、照明装置、表面実装部品、および表示装置 Expired - Lifetime JP4805831B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2006529398A JP4805831B2 (ja) 2004-03-18 2005-03-16 半導体発光装置、照明モジュール、照明装置、表面実装部品、および表示装置

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP2004079299 2004-03-18
JP2004079299 2004-03-18
JP2004208524 2004-07-15
JP2004208524 2004-07-15
PCT/JP2005/005296 WO2005091388A1 (en) 2004-03-18 2005-03-16 Nitride based led with a p-type injection region
JP2006529398A JP4805831B2 (ja) 2004-03-18 2005-03-16 半導体発光装置、照明モジュール、照明装置、表面実装部品、および表示装置

Publications (3)

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JP2007529879A JP2007529879A (ja) 2007-10-25
JP2007529879A5 JP2007529879A5 (enExample) 2008-04-24
JP4805831B2 true JP4805831B2 (ja) 2011-11-02

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Country Status (5)

Country Link
US (1) US7420218B2 (enExample)
EP (1) EP1733439B1 (enExample)
JP (1) JP4805831B2 (enExample)
TW (1) TWI362760B (enExample)
WO (1) WO2005091388A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019191134A1 (en) * 2018-03-26 2019-10-03 Lawrence Livermore National Security, Llc Engineered current-density profile diode laser

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