JP2017204640A - 発光デバイス及びその製造方法 - Google Patents
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/0004—Devices characterised by their operation
- H01L33/002—Devices characterised by their operation having heterojunctions or graded gap
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/42—Transparent materials
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
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- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/642—Heat extraction or cooling elements characterized by the shape
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L2933/0016—Processes relating to electrodes
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- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
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Abstract
Description
102 緩衝層
103 第一接触層
104 発光積層
104a 第一極性半導体層
104b 活性領域
104c 第二極性半導体層
105 第二接触層
106 絶縁層
106h 第一開口
107 第一透明導電層
108 第二透明導電層
109 反射層
110 接合構造
110a 第一接合層
110b 第二接合層
110c 第三接合層
111 永久基板
112 上接触層
H1 第二開口
H4 第四開口
113 側壁絶縁層
114 上電極
114S 金属層
115 保護層
115h 第三開口
111E 下電極
D1、D2、D3、D4 孔洞直径
116 第一半導体層
117 第二半導体層
d 最小距離
W 厚さ
W1 幅
h 高さ
1051 表面
1071 表面
118 導熱層
118t 頂面
118s 側面
118a 内輪郭
118b 外輪郭
Claims (27)
- 発光デバイスであって、
基板と、
前記基板の上方に位置し、かつ第一開口を含む絶縁層と、
前記絶縁層の上方に位置し、かつ活性領域及び上表面を含む発光積層と、
前記発光積層の前記上表面の第一部分を被覆し、かつ前記上表面の第二部分を露出させる非透光層とを含み、
前記第二部分が前記第一開口の真上に位置する発光デバイス。 - 前記発光デバイスはさらに側壁絶縁層を含み、
前記非透光層はさらに前記発光積層の側壁の少なくとも一部を被覆し、かつ前記側壁絶縁層が前記非透光層と前記発光積層の前記側壁との間に位置する、請求項1に記載の発光デバイス。 - 前記活性領域は多重量子井戸(MQW)構造を含み、かつ前記多重量子井戸(MQW)構造が30から50個の井戸層を含む、請求項1に記載の発光デバイス。
- 前記上表面の前記第一部分の面積が前記第二部分の面積より大きい、請求項1に記載の発光デバイス。
- 前記第一開口の断面積と前記上表面の面積の比率が約1.5%から5%である、請求項1に記載の発光デバイス。
- 前記発光デバイスはさらに反射層及び第一透明導電層を含み、
前記反射層は前記絶縁層及び前記基板の間に位置し、前記第一透明導電層は前記絶縁層及び前記反射層の間に位置し、
前記第一透明導電層は前記第一開口によって前記発光積層と電気的に接続する、請求項1に記載の発光デバイス。 - 前記発光積層の上に位置する第一接触層と、
前記第一接触層を貫通する第二開口とをさらに含む、請求項1に記載の発光デバイス。 - 前記第二開口が前記第一開口の真上に位置する、請求項7に記載の発光デバイス。
- 前記非透光層を貫通する第二開口をさらに含む、請求項1に記載の発光デバイス。
- 前記活性領域は多重量子井戸(MQW)構造を含み、かつ前記多重量子井戸(MQW)構造が複数のバリア層を含み、
各前記バリア層は、(AlyGa(1−y))1−xInxPで示されるリン化アルミニウムガリウムインジウム系の材料を含み、かつ、0≦x<1、0.4≦y≦0.7である、請求項1に記載の発光デバイス。 - 前記第二部分の上に設けられた導熱層をさらに含む、請求項1に記載の発光デバイス。
- 前記導熱層は導熱係数が100W/(m×K)以上の材料を含む、請求項11に記載の発光デバイス。
- 前記発光積層中に設けられた導熱層をさらに含む、請求項1に記載の発光デバイス。
- 前記導熱層は導熱係数が100W/(m×K)以上の材料を含む、請求項13に記載の発光デバイス。
- 前記導熱層は、前記第一開口と位置が対応する開口を有する、請求項13に記載の発光デバイス。
- 前記導熱層の前記開口の上面視面積が前記第二部分の上面視面積より大きい、請求項15に記載の発光デバイス。
- 断面から見て、前記導熱層の面積が前記発光積層の面積より大きい、請求項13に記載の発光デバイス。
- 発光デバイスの製造方法であって、
活性領域を含む発光積層を形成するステップと、
前記発光積層の上方に、第一開口を含む絶縁層を形成するステップと、
基板を提供するステップと、
前記基板と前記発光積層とを接合させるステップと、
前記発光積層の前記基板と接合する方向と反対側において、前記発光積層の表面の第一部分を被覆し、かつ前記表面の第二部分を露出させるように、非透光層を形成するステップとを含み、
前記第二部分の位置と前記絶縁層の前記第一開口の位置とが対応する、発光デバイスの製造方法。 - 前記発光積層の側壁にさらに側壁絶縁層を形成するステップを含み、
前記非透光層がさらに前記発光積層の側壁の少なくとも一部を被覆し、かつ前記側壁絶縁層が前記非透光層と前記発光積層との間に位置する、請求項18に記載の発光デバイスの製造方法。 - 前記発光積層の前記表面の前記第一部分の面積が前記第二部分の面積より大きい、請求項18に記載に発光デバイスの製造方法。
- 前記第一開口の断面積と前記表面の面積の比率が約1.5%から5%である、請求項18に記載の発光デバイスの製造方法。
- 前記基板と前記発光積層を接合させる前に、さらに、前記絶縁層の上に第一透明導電層を形成するステップを含み、
前記第一透明導電層は前記第一開口によって前記発光積層と電気的に接続する、請求項18に記載の発光デバイスの製造方法。 - さらに、前記非透光層を貫通する第二開口を形成するステップを含む、請求項18に記載の発光デバイスの製造方法。
- 前記第二開口が前記第一開口の真上に位置する、請求項23に記載の発光デバイスの製造方法。
- 前記活性領域が多重量子井戸(MQW)構造であり、かつ前記多重量子井戸(MQW)構造が30から50個の井戸層を含む、請求項18に記載の発光デバイスの製造方法。
- 前記活性領域は多重量子井戸(MQW)構造であり、かつ前記多重量子井戸(MQW)構造が複数個のバリア層を含み、
各前記バリア層は、(AlyGa(1−y))1−xInxPで示されるリン化アルミニウムガリウムインジウム系材料を含み、かつ、0≦x<1、0.4≦y≦0.7である、請求項18に記載の発光デバイスの製造方法。 - 前記発光積層を形成する前に、さらに第一接触層を形成するステップを含み、
かつ、前記基板と前記発光積層とを接合させた後、さらに前記第一接触層を貫通する第二開口を形成するステップを含む、請求項18に記載の発光デバイスの製造方法。
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