JP4799543B2 - 半導体パッケージ及びカメラモジュール - Google Patents
半導体パッケージ及びカメラモジュール Download PDFInfo
- Publication number
- JP4799543B2 JP4799543B2 JP2007338200A JP2007338200A JP4799543B2 JP 4799543 B2 JP4799543 B2 JP 4799543B2 JP 2007338200 A JP2007338200 A JP 2007338200A JP 2007338200 A JP2007338200 A JP 2007338200A JP 4799543 B2 JP4799543 B2 JP 4799543B2
- Authority
- JP
- Japan
- Prior art keywords
- main surface
- electrode
- substrate
- semiconductor substrate
- camera module
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
- H04N23/57—Mechanical or electrical details of cameras or camera modules specially adapted for being embedded in other devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/804—Containers or encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/806—Optical elements or arrangements associated with the image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/01—Manufacture or treatment
- H10W20/021—Manufacture or treatment of interconnections within wafers or substrates
- H10W20/023—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias
- H10W20/0234—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias comprising etching via holes that stop on pads or on electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/20—Interconnections within wafers or substrates, e.g. through-silicon vias [TSV]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/20—Interconnections within wafers or substrates, e.g. through-silicon vias [TSV]
- H10W20/211—Through-semiconductor vias, e.g. TSVs
- H10W20/216—Through-semiconductor vias, e.g. TSVs characterised by dielectric material at least partially filling the via holes, e.g. covering the through-semiconductor vias in the via holes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
- H10W70/62—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
- H10W70/65—Shapes or dispositions of interconnections
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/01—Manufacture or treatment
- H10W72/019—Manufacture or treatment of bond pads
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
- H10W72/241—Dispositions, e.g. layouts
- H10W72/242—Dispositions, e.g. layouts relative to the surface, e.g. recessed, protruding
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
- H10W72/241—Dispositions, e.g. layouts
- H10W72/244—Dispositions, e.g. layouts relative to underlying supporting features, e.g. bond pads, RDLs or vias
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
- H10W72/251—Materials
- H10W72/252—Materials comprising solid metals or solid metalloids, e.g. PbSn, Ag or Cu
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
- H10W72/29—Bond pads specially adapted therefor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/90—Bond pads, in general
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/90—Bond pads, in general
- H10W72/921—Structures or relative sizes of bond pads
- H10W72/922—Bond pads being integral with underlying chip-level interconnections
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/90—Bond pads, in general
- H10W72/941—Dispositions of bond pads
- H10W72/944—Dispositions of multiple bond pads
Landscapes
- Engineering & Computer Science (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007338200A JP4799543B2 (ja) | 2007-12-27 | 2007-12-27 | 半導体パッケージ及びカメラモジュール |
| KR1020097014440A KR101032182B1 (ko) | 2007-12-27 | 2008-12-19 | 반도체 패키지 및 카메라 모듈 |
| PCT/JP2008/073883 WO2009084701A1 (en) | 2007-12-27 | 2008-12-19 | Semiconductor package and camera module |
| EP08868575.5A EP2179445A4 (en) | 2007-12-27 | 2008-12-19 | SEMICONDUCTOR PACK AND CAMERA MODULE |
| TW097150750A TWI387075B (zh) | 2007-12-27 | 2008-12-25 | 半導體封裝以及攝影機模組 |
| US12/511,099 US8228426B2 (en) | 2007-12-27 | 2009-07-29 | Semiconductor package and camera module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007338200A JP4799543B2 (ja) | 2007-12-27 | 2007-12-27 | 半導体パッケージ及びカメラモジュール |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2009158863A JP2009158863A (ja) | 2009-07-16 |
| JP2009158863A5 JP2009158863A5 (https=) | 2011-03-03 |
| JP4799543B2 true JP4799543B2 (ja) | 2011-10-26 |
Family
ID=40824414
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007338200A Expired - Fee Related JP4799543B2 (ja) | 2007-12-27 | 2007-12-27 | 半導体パッケージ及びカメラモジュール |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US8228426B2 (https=) |
| EP (1) | EP2179445A4 (https=) |
| JP (1) | JP4799543B2 (https=) |
| KR (1) | KR101032182B1 (https=) |
| TW (1) | TWI387075B (https=) |
| WO (1) | WO2009084701A1 (https=) |
Families Citing this family (42)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4585561B2 (ja) * | 2007-09-04 | 2010-11-24 | 株式会社東芝 | 半導体装置の製造方法 |
| JP4762264B2 (ja) * | 2008-04-01 | 2011-08-31 | 岩手東芝エレクトロニクス株式会社 | カメラモジュールおよびカメラモジュールの製造方法 |
| JP5356742B2 (ja) * | 2008-07-10 | 2013-12-04 | ラピスセミコンダクタ株式会社 | 半導体装置、半導体装置の製造方法および半導体パッケージの製造方法 |
| JP5150566B2 (ja) * | 2009-06-22 | 2013-02-20 | 株式会社東芝 | 半導体装置およびカメラモジュール |
| JP2011009645A (ja) * | 2009-06-29 | 2011-01-13 | Toshiba Corp | 半導体装置及びその製造方法 |
| FR2948815B1 (fr) * | 2009-07-31 | 2012-02-03 | E2V Semiconductors | Structure de plots de connexion pour composant electronique |
| JP5356264B2 (ja) * | 2010-01-18 | 2013-12-04 | シャープ株式会社 | カメラモジュールおよびその製造方法、電子情報機器 |
| JP2011187754A (ja) * | 2010-03-10 | 2011-09-22 | Toshiba Corp | 固体撮像装置及びその製造方法 |
| JP5017406B2 (ja) * | 2010-03-24 | 2012-09-05 | 株式会社東芝 | カメラモジュール |
| JP2011205222A (ja) | 2010-03-24 | 2011-10-13 | Toshiba Corp | カメラモジュール |
| JP5757749B2 (ja) | 2010-05-19 | 2015-07-29 | 富士フイルム株式会社 | 重合性組成物 |
| JP5352534B2 (ja) * | 2010-05-31 | 2013-11-27 | パナソニック株式会社 | 半導体装置及びその製造方法 |
| US8536671B2 (en) * | 2010-06-07 | 2013-09-17 | Tsang-Yu Liu | Chip package |
| US8598695B2 (en) | 2010-07-23 | 2013-12-03 | Tessera, Inc. | Active chip on carrier or laminated chip having microelectronic element embedded therein |
| JP5544239B2 (ja) | 2010-07-29 | 2014-07-09 | 富士フイルム株式会社 | 重合性組成物 |
| JP5709435B2 (ja) | 2010-08-23 | 2015-04-30 | キヤノン株式会社 | 撮像モジュール及びカメラ |
| JP2012044091A (ja) * | 2010-08-23 | 2012-03-01 | Canon Inc | 撮像装置、撮像モジュール及びカメラ |
| JP5682185B2 (ja) * | 2010-09-07 | 2015-03-11 | ソニー株式会社 | 半導体パッケージおよび半導体パッケージの製造方法ならびに光学モジュール |
| JP5221615B2 (ja) * | 2010-09-21 | 2013-06-26 | 株式会社東芝 | 撮像装置およびその製造方法 |
| JP2012084609A (ja) * | 2010-10-07 | 2012-04-26 | Sony Corp | 固体撮像装置とその製造方法、及び電子機器 |
| JP5417364B2 (ja) | 2011-03-08 | 2014-02-12 | 富士フイルム株式会社 | 固体撮像素子用硬化性組成物、並びに、これを用いた感光層、永久パターン、ウエハレベルレンズ、固体撮像素子、及び、パターン形成方法 |
| JP5958732B2 (ja) | 2011-03-11 | 2016-08-02 | ソニー株式会社 | 半導体装置、製造方法、および電子機器 |
| JP2012242587A (ja) * | 2011-05-19 | 2012-12-10 | Toshiba Corp | カメラモジュールおよびカメラモジュールの製造方法 |
| US8890191B2 (en) * | 2011-06-30 | 2014-11-18 | Chuan-Jin Shiu | Chip package and method for forming the same |
| JP2013041878A (ja) | 2011-08-11 | 2013-02-28 | Sony Corp | 撮像装置およびカメラモジュール |
| SG11201504182RA (en) | 2012-11-30 | 2015-06-29 | Fujifilm Corp | Curable resin composition, production method of image sensor chip using the same, and image sensor chip |
| SG11201504205WA (en) | 2012-11-30 | 2015-07-30 | Fujifilm Corp | Curable resin composition, production method of image sensor chip using the same, and image sensor chip |
| SG11201505047WA (en) | 2012-12-28 | 2015-08-28 | Fujifilm Corp | Curable resin composition for forming infrared reflective film, infrared reflective film and manufacturing method thereof, infrared ray cutoff filter and solid-state imaging device using the same |
| JP6343446B2 (ja) | 2012-12-28 | 2018-06-13 | 富士フイルム株式会社 | 硬化性樹脂組成物、赤外線カットフィルタ及びこれを用いた固体撮像素子 |
| EP2772939B1 (en) * | 2013-03-01 | 2016-10-19 | Ams Ag | Semiconductor device for detection of radiation and method of producing a semiconductor device for detection of radiation |
| US9142695B2 (en) * | 2013-06-03 | 2015-09-22 | Optiz, Inc. | Sensor package with exposed sensor array and method of making same |
| US20150189204A1 (en) * | 2013-12-27 | 2015-07-02 | Optiz, Inc. | Semiconductor Device On Cover Substrate And Method Of Making Same |
| JP6300029B2 (ja) | 2014-01-27 | 2018-03-28 | ソニー株式会社 | 撮像素子、製造装置、製造方法 |
| JP6727948B2 (ja) * | 2015-07-24 | 2020-07-22 | ソニーセミコンダクタソリューションズ株式会社 | 撮像素子、製造方法 |
| JP6662610B2 (ja) * | 2015-11-12 | 2020-03-11 | 旭化成エレクトロニクス株式会社 | 光センサ装置 |
| US10466501B2 (en) * | 2016-05-26 | 2019-11-05 | Ams Sensors Singapore Pte. Ltd. | Optoelectronic modules including an optical system tilted with respect to a focal plane |
| WO2017209296A1 (ja) * | 2016-06-03 | 2017-12-07 | 大日本印刷株式会社 | 貫通電極基板及びその製造方法、並びに実装基板 |
| US9996725B2 (en) | 2016-11-03 | 2018-06-12 | Optiz, Inc. | Under screen sensor assembly |
| JP6963396B2 (ja) * | 2017-02-28 | 2021-11-10 | キヤノン株式会社 | 電子部品の製造方法 |
| US12132063B2 (en) | 2019-05-30 | 2024-10-29 | Sony Semiconductor Solutions Corporation | Semiconductor package and method for manufacturing semiconductor package |
| KR102859087B1 (ko) | 2020-08-13 | 2025-09-12 | 삼성전자주식회사 | 반도체 패키지 및 그 제조방법 |
| KR20240104293A (ko) | 2022-12-27 | 2024-07-05 | 삼성전자주식회사 | 반도체 패키지 및 반도체 패키지의 제조 방법 |
Family Cites Families (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002094082A (ja) * | 2000-07-11 | 2002-03-29 | Seiko Epson Corp | 光素子及びその製造方法並びに電子機器 |
| JP2007134735A (ja) | 2000-07-11 | 2007-05-31 | Seiko Epson Corp | 光素子及びその製造方法並びに電子機器 |
| JP4000507B2 (ja) * | 2001-10-04 | 2007-10-31 | ソニー株式会社 | 固体撮像装置の製造方法 |
| US7074638B2 (en) * | 2002-04-22 | 2006-07-11 | Fuji Photo Film Co., Ltd. | Solid-state imaging device and method of manufacturing said solid-state imaging device |
| JP2004226872A (ja) * | 2003-01-27 | 2004-08-12 | Sanyo Electric Co Ltd | カメラモジュール及びその製造方法 |
| US7180149B2 (en) * | 2003-08-28 | 2007-02-20 | Fujikura Ltd. | Semiconductor package with through-hole |
| JP4198072B2 (ja) * | 2004-01-23 | 2008-12-17 | シャープ株式会社 | 半導体装置、光学装置用モジュール及び半導体装置の製造方法 |
| JP4236594B2 (ja) * | 2004-01-27 | 2009-03-11 | シャープ株式会社 | 光学装置用モジュール及び光学装置用モジュールの製造方法 |
| JP4477956B2 (ja) * | 2004-07-14 | 2010-06-09 | 積水化学工業株式会社 | 軒樋用ストッパ |
| JP4139803B2 (ja) * | 2004-09-28 | 2008-08-27 | シャープ株式会社 | 半導体装置の製造方法 |
| TWI303864B (en) * | 2004-10-26 | 2008-12-01 | Sanyo Electric Co | Semiconductor device and method for making the same |
| US8368096B2 (en) * | 2005-01-04 | 2013-02-05 | Aac Technologies Japan R&D Center Co., Ltd. | Solid state image pick-up device and method for manufacturing the same with increased structural integrity |
| JP4951989B2 (ja) * | 2006-02-09 | 2012-06-13 | 富士通セミコンダクター株式会社 | 半導体装置 |
| JP2007273629A (ja) * | 2006-03-30 | 2007-10-18 | Fujifilm Corp | 固体撮像装置の製造方法及び固体撮像装置 |
| JP2007305955A (ja) * | 2006-04-10 | 2007-11-22 | Toshiba Corp | 半導体装置及びその製造方法 |
| JP2007305960A (ja) * | 2006-04-14 | 2007-11-22 | Sharp Corp | 半導体装置およびその製造方法 |
| JP4483896B2 (ja) * | 2007-05-16 | 2010-06-16 | ソニー株式会社 | 半導体装置及びその製造方法 |
| JP5159192B2 (ja) * | 2007-07-06 | 2013-03-06 | 株式会社東芝 | 半導体装置の製造方法 |
| JP2009064839A (ja) * | 2007-09-04 | 2009-03-26 | Panasonic Corp | 光学デバイス及びその製造方法 |
| JP4799542B2 (ja) * | 2007-12-27 | 2011-10-26 | 株式会社東芝 | 半導体パッケージ |
| JP5317586B2 (ja) * | 2008-08-28 | 2013-10-16 | ラピスセミコンダクタ株式会社 | カメラモジュール及びその製造方法 |
| JP5418044B2 (ja) * | 2009-07-30 | 2014-02-19 | ソニー株式会社 | 固体撮像装置およびその製造方法 |
| JP5709435B2 (ja) * | 2010-08-23 | 2015-04-30 | キヤノン株式会社 | 撮像モジュール及びカメラ |
-
2007
- 2007-12-27 JP JP2007338200A patent/JP4799543B2/ja not_active Expired - Fee Related
-
2008
- 2008-12-19 EP EP08868575.5A patent/EP2179445A4/en not_active Withdrawn
- 2008-12-19 WO PCT/JP2008/073883 patent/WO2009084701A1/en not_active Ceased
- 2008-12-19 KR KR1020097014440A patent/KR101032182B1/ko not_active Expired - Fee Related
- 2008-12-25 TW TW097150750A patent/TWI387075B/zh not_active IP Right Cessation
-
2009
- 2009-07-29 US US12/511,099 patent/US8228426B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| TWI387075B (zh) | 2013-02-21 |
| WO2009084701A1 (en) | 2009-07-09 |
| TW200933845A (en) | 2009-08-01 |
| JP2009158863A (ja) | 2009-07-16 |
| US20090284631A1 (en) | 2009-11-19 |
| US8228426B2 (en) | 2012-07-24 |
| KR101032182B1 (ko) | 2011-05-02 |
| EP2179445A1 (en) | 2010-04-28 |
| EP2179445A4 (en) | 2013-08-21 |
| KR20090099552A (ko) | 2009-09-22 |
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