EP2179445A4 - SEMICONDUCTOR PACK AND CAMERA MODULE - Google Patents

SEMICONDUCTOR PACK AND CAMERA MODULE

Info

Publication number
EP2179445A4
EP2179445A4 EP08868575.5A EP08868575A EP2179445A4 EP 2179445 A4 EP2179445 A4 EP 2179445A4 EP 08868575 A EP08868575 A EP 08868575A EP 2179445 A4 EP2179445 A4 EP 2179445A4
Authority
EP
European Patent Office
Prior art keywords
camera module
semiconductor housing
semiconductor
housing
camera
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP08868575.5A
Other languages
German (de)
English (en)
French (fr)
Other versions
EP2179445A1 (en
Inventor
Mie Matsuo
Atsuko Kawasaki
Kenji Takahashi
Masahiro Sekiguchi
Kazumasa Tanida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Publication of EP2179445A1 publication Critical patent/EP2179445A1/en
Publication of EP2179445A4 publication Critical patent/EP2179445A4/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/57—Mechanical or electrical details of cameras or camera modules specially adapted for being embedded in other devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/804—Containers or encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/021—Manufacture or treatment of interconnections within wafers or substrates
    • H10W20/023—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias
    • H10W20/0234—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias comprising etching via holes that stop on pads or on electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/20—Interconnections within wafers or substrates, e.g. through-silicon vias [TSV]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/20—Interconnections within wafers or substrates, e.g. through-silicon vias [TSV]
    • H10W20/211—Through-semiconductor vias, e.g. TSVs
    • H10W20/216—Through-semiconductor vias, e.g. TSVs characterised by dielectric material at least partially filling the via holes, e.g. covering the through-semiconductor vias in the via holes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/62—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
    • H10W70/65—Shapes or dispositions of interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/019—Manufacture or treatment of bond pads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/241—Dispositions, e.g. layouts
    • H10W72/242—Dispositions, e.g. layouts relative to the surface, e.g. recessed, protruding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/241—Dispositions, e.g. layouts
    • H10W72/244—Dispositions, e.g. layouts relative to underlying supporting features, e.g. bond pads, RDLs or vias
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/251—Materials
    • H10W72/252—Materials comprising solid metals or solid metalloids, e.g. PbSn, Ag or Cu
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/29—Bond pads specially adapted therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/921—Structures or relative sizes of bond pads
    • H10W72/922—Bond pads being integral with underlying chip-level interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/941—Dispositions of bond pads
    • H10W72/944—Dispositions of multiple bond pads

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
EP08868575.5A 2007-12-27 2008-12-19 SEMICONDUCTOR PACK AND CAMERA MODULE Withdrawn EP2179445A4 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007338200A JP4799543B2 (ja) 2007-12-27 2007-12-27 半導体パッケージ及びカメラモジュール
PCT/JP2008/073883 WO2009084701A1 (en) 2007-12-27 2008-12-19 Semiconductor package and camera module

Publications (2)

Publication Number Publication Date
EP2179445A1 EP2179445A1 (en) 2010-04-28
EP2179445A4 true EP2179445A4 (en) 2013-08-21

Family

ID=40824414

Family Applications (1)

Application Number Title Priority Date Filing Date
EP08868575.5A Withdrawn EP2179445A4 (en) 2007-12-27 2008-12-19 SEMICONDUCTOR PACK AND CAMERA MODULE

Country Status (6)

Country Link
US (1) US8228426B2 (https=)
EP (1) EP2179445A4 (https=)
JP (1) JP4799543B2 (https=)
KR (1) KR101032182B1 (https=)
TW (1) TWI387075B (https=)
WO (1) WO2009084701A1 (https=)

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JP4585561B2 (ja) * 2007-09-04 2010-11-24 株式会社東芝 半導体装置の製造方法
JP4762264B2 (ja) * 2008-04-01 2011-08-31 岩手東芝エレクトロニクス株式会社 カメラモジュールおよびカメラモジュールの製造方法
JP5356742B2 (ja) * 2008-07-10 2013-12-04 ラピスセミコンダクタ株式会社 半導体装置、半導体装置の製造方法および半導体パッケージの製造方法
JP5150566B2 (ja) * 2009-06-22 2013-02-20 株式会社東芝 半導体装置およびカメラモジュール
JP2011009645A (ja) * 2009-06-29 2011-01-13 Toshiba Corp 半導体装置及びその製造方法
FR2948815B1 (fr) * 2009-07-31 2012-02-03 E2V Semiconductors Structure de plots de connexion pour composant electronique
JP5356264B2 (ja) * 2010-01-18 2013-12-04 シャープ株式会社 カメラモジュールおよびその製造方法、電子情報機器
JP2011187754A (ja) * 2010-03-10 2011-09-22 Toshiba Corp 固体撮像装置及びその製造方法
JP5017406B2 (ja) * 2010-03-24 2012-09-05 株式会社東芝 カメラモジュール
JP2011205222A (ja) 2010-03-24 2011-10-13 Toshiba Corp カメラモジュール
JP5757749B2 (ja) 2010-05-19 2015-07-29 富士フイルム株式会社 重合性組成物
JP5352534B2 (ja) * 2010-05-31 2013-11-27 パナソニック株式会社 半導体装置及びその製造方法
US8536671B2 (en) * 2010-06-07 2013-09-17 Tsang-Yu Liu Chip package
US8598695B2 (en) 2010-07-23 2013-12-03 Tessera, Inc. Active chip on carrier or laminated chip having microelectronic element embedded therein
JP5544239B2 (ja) 2010-07-29 2014-07-09 富士フイルム株式会社 重合性組成物
JP5709435B2 (ja) 2010-08-23 2015-04-30 キヤノン株式会社 撮像モジュール及びカメラ
JP2012044091A (ja) * 2010-08-23 2012-03-01 Canon Inc 撮像装置、撮像モジュール及びカメラ
JP5682185B2 (ja) * 2010-09-07 2015-03-11 ソニー株式会社 半導体パッケージおよび半導体パッケージの製造方法ならびに光学モジュール
JP5221615B2 (ja) * 2010-09-21 2013-06-26 株式会社東芝 撮像装置およびその製造方法
JP2012084609A (ja) * 2010-10-07 2012-04-26 Sony Corp 固体撮像装置とその製造方法、及び電子機器
JP5417364B2 (ja) 2011-03-08 2014-02-12 富士フイルム株式会社 固体撮像素子用硬化性組成物、並びに、これを用いた感光層、永久パターン、ウエハレベルレンズ、固体撮像素子、及び、パターン形成方法
JP5958732B2 (ja) 2011-03-11 2016-08-02 ソニー株式会社 半導体装置、製造方法、および電子機器
JP2012242587A (ja) * 2011-05-19 2012-12-10 Toshiba Corp カメラモジュールおよびカメラモジュールの製造方法
US8890191B2 (en) * 2011-06-30 2014-11-18 Chuan-Jin Shiu Chip package and method for forming the same
JP2013041878A (ja) 2011-08-11 2013-02-28 Sony Corp 撮像装置およびカメラモジュール
SG11201504182RA (en) 2012-11-30 2015-06-29 Fujifilm Corp Curable resin composition, production method of image sensor chip using the same, and image sensor chip
SG11201504205WA (en) 2012-11-30 2015-07-30 Fujifilm Corp Curable resin composition, production method of image sensor chip using the same, and image sensor chip
SG11201505047WA (en) 2012-12-28 2015-08-28 Fujifilm Corp Curable resin composition for forming infrared reflective film, infrared reflective film and manufacturing method thereof, infrared ray cutoff filter and solid-state imaging device using the same
JP6343446B2 (ja) 2012-12-28 2018-06-13 富士フイルム株式会社 硬化性樹脂組成物、赤外線カットフィルタ及びこれを用いた固体撮像素子
EP2772939B1 (en) * 2013-03-01 2016-10-19 Ams Ag Semiconductor device for detection of radiation and method of producing a semiconductor device for detection of radiation
US9142695B2 (en) * 2013-06-03 2015-09-22 Optiz, Inc. Sensor package with exposed sensor array and method of making same
US20150189204A1 (en) * 2013-12-27 2015-07-02 Optiz, Inc. Semiconductor Device On Cover Substrate And Method Of Making Same
JP6300029B2 (ja) 2014-01-27 2018-03-28 ソニー株式会社 撮像素子、製造装置、製造方法
JP6727948B2 (ja) * 2015-07-24 2020-07-22 ソニーセミコンダクタソリューションズ株式会社 撮像素子、製造方法
JP6662610B2 (ja) * 2015-11-12 2020-03-11 旭化成エレクトロニクス株式会社 光センサ装置
US10466501B2 (en) * 2016-05-26 2019-11-05 Ams Sensors Singapore Pte. Ltd. Optoelectronic modules including an optical system tilted with respect to a focal plane
WO2017209296A1 (ja) * 2016-06-03 2017-12-07 大日本印刷株式会社 貫通電極基板及びその製造方法、並びに実装基板
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JP6963396B2 (ja) * 2017-02-28 2021-11-10 キヤノン株式会社 電子部品の製造方法
US12132063B2 (en) 2019-05-30 2024-10-29 Sony Semiconductor Solutions Corporation Semiconductor package and method for manufacturing semiconductor package
KR102859087B1 (ko) 2020-08-13 2025-09-12 삼성전자주식회사 반도체 패키지 및 그 제조방법
KR20240104293A (ko) 2022-12-27 2024-07-05 삼성전자주식회사 반도체 패키지 및 반도체 패키지의 제조 방법

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Title
See also references of WO2009084701A1 *

Also Published As

Publication number Publication date
TWI387075B (zh) 2013-02-21
WO2009084701A1 (en) 2009-07-09
TW200933845A (en) 2009-08-01
JP2009158863A (ja) 2009-07-16
US20090284631A1 (en) 2009-11-19
JP4799543B2 (ja) 2011-10-26
US8228426B2 (en) 2012-07-24
KR101032182B1 (ko) 2011-05-02
EP2179445A1 (en) 2010-04-28
KR20090099552A (ko) 2009-09-22

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