JP4771526B2 - 軟金属導体 - Google Patents
軟金属導体 Download PDFInfo
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- JP4771526B2 JP4771526B2 JP2005295811A JP2005295811A JP4771526B2 JP 4771526 B2 JP4771526 B2 JP 4771526B2 JP 2005295811 A JP2005295811 A JP 2005295811A JP 2005295811 A JP2005295811 A JP 2005295811A JP 4771526 B2 JP4771526 B2 JP 4771526B2
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- soft metal
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- 229910052751 metal Inorganic materials 0.000 title claims description 103
- 239000002184 metal Substances 0.000 title claims description 103
- 239000004020 conductor Substances 0.000 title claims description 36
- 229910018182 Al—Cu Inorganic materials 0.000 claims description 30
- 229910010038 TiAl Inorganic materials 0.000 claims description 18
- 239000004065 semiconductor Substances 0.000 claims description 14
- 239000000956 alloy Substances 0.000 claims description 7
- 238000000137 annealing Methods 0.000 claims description 7
- 229910045601 alloy Inorganic materials 0.000 claims description 3
- 238000009792 diffusion process Methods 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 104
- 239000002245 particle Substances 0.000 description 46
- 238000000034 method Methods 0.000 description 35
- 238000005498 polishing Methods 0.000 description 25
- 238000000151 deposition Methods 0.000 description 17
- 229910052802 copper Inorganic materials 0.000 description 12
- 239000010949 copper Substances 0.000 description 12
- 229910052782 aluminium Inorganic materials 0.000 description 11
- 235000019589 hardness Nutrition 0.000 description 9
- 239000002923 metal particle Substances 0.000 description 9
- 238000001020 plasma etching Methods 0.000 description 9
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 8
- 230000008021 deposition Effects 0.000 description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 7
- 238000007517 polishing process Methods 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 238000004151 rapid thermal annealing Methods 0.000 description 6
- 238000005137 deposition process Methods 0.000 description 5
- 150000002739 metals Chemical class 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 239000002344 surface layer Substances 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- WYTGDNHDOZPMIW-RCBQFDQVSA-N alstonine Natural products C1=CC2=C3C=CC=CC3=NC2=C2N1C[C@H]1[C@H](C)OC=C(C(=O)OC)[C@H]1C2 WYTGDNHDOZPMIW-RCBQFDQVSA-N 0.000 description 4
- WPPDFTBPZNZZRP-UHFFFAOYSA-N aluminum copper Chemical compound [Al].[Cu] WPPDFTBPZNZZRP-UHFFFAOYSA-N 0.000 description 4
- 238000004458 analytical method Methods 0.000 description 4
- 238000001312 dry etching Methods 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000005240 physical vapour deposition Methods 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 239000002002 slurry Substances 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 230000003628 erosive effect Effects 0.000 description 3
- 238000011049 filling Methods 0.000 description 3
- 239000007769 metal material Substances 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- 229910002056 binary alloy Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000008119 colloidal silica Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 239000012044 organic layer Substances 0.000 description 2
- 229910002058 ternary alloy Inorganic materials 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 239000011800 void material Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 239000006117 anti-reflective coating Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000007373 indentation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
- H01L21/76805—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics the opening being a via or contact hole penetrating the underlying conductor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/7684—Smoothing; Planarisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/5226—Via connections in a multilevel interconnection structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
- H01L23/53214—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being aluminium
- H01L23/53223—Additional layers associated with aluminium layers, e.g. adhesion, barrier, cladding layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Electrodes Of Semiconductors (AREA)
Description
例1は、本発明の方法による2レベルの軟金属埋め込みバイア構造の形成を示している。まず、乾式エッチング法の1つである反応性イオン・エッチング(RIE)を使用して、アルミニウム−銅を付着する前に境界面をきれいにする。図1に示すように、半導体基板(図示せず)上に形成され、すでに反応性イオン・エッチングされた、図1にM1として示されている金属層の上に、バイア構造10が形成される。金属層M1は、下側のTi層、その上のAl−Cu層、その上のTi層22および上側のTiN層20からなる。酸化物層12またはその他の低誘電率無機または有機層を付着し、コロイド・シリカを使用する化学的機械的研磨によって平坦化する。追加の酸化物14を付着し、次に線およびバイア用のパターンを形成する。次に、RIE技法を使用して、金属層M1に対するバイア領域に開孔を形成する。RIE技法は、すでに形成したM1層の上のすべての非Al−Cu層を除去するための重要なステップである。次に、PVDプロセスを使用して、30nm未満のTiの層16と、Al−Cuの層18と、Ti/TiNの最終層(図示せず)を順に付着する。Al−Cu層の付着は、軟金属層の厚さの少なくとも約20%の粒子サイズを有する金属粒子を生成することによって実施する。次に、シリカ粒子を含むスラリーと低圧を使用してこの構造を化学的に研磨し、1つのステップで素子間結線とバイアを形成する。
乾式エッチングRIE技法を使用して、Al−Cuの付着前に境界面をきれいにすることにより形成した単一レベルの軟金属埋め込み構造を図3に示す。バイア構造50は、すでに反応性イオン・エッチングを施したTi/Al−Cu/Ti/TiNのM1層の上に形成されている。酸化物またはその他の低誘電率無機または有機層54を付着し、コロイド・シリカを使用する化学的機械的研磨によって平坦化する。酸化物層54には、バイア50用にパターンを形成する。RIE技法を使用して、第1のバイアを開く。RIE技法を使用して、すでに形成したM1層の上のすべての非Al−Cu層を除去することは、重要なステップである。次に、PVDプロセスを使用して、全体が30nm未満の厚さの第1のTi層58と、次にAl−Cuの層60とを形成する。これについては図4に示す。Ti層58および68は、その後、400℃でのアニール後にTiAl3を形成する。Al−Cu層の付着プロセスを行うと、その結果、軟金属層の厚さの少なくとも約20%の粒子サイズを有する層が付着される。次に、シリカ粒子を加えたスラリーと低圧を使用して、バイア構造50を化学的に研磨する。次に、非常に薄い、すなわち、30nm未満のTi層64を下にして層M2を付着し、パターン形成し、反応性イオン・エッチングを施して、素子間結線構造を形成する。上部のTi層64は下部のTi層58より厚くすることができる。TiNの層62および66は、フォトマスク・プロセス用の反射防止膜として形成される。
Al、CuおよびAgから成るグループから選択された単金属材料、または、Al、CuおよびAgから成るグループから選択された2元合金材料もしくは3元合金材料から成る第1の軟金属層と、
前記第1の軟金属層の上に形成され、厚さが30nm未満の第1のTi層と、
Al、CuおよびAgから成るグループから選択された単金属材料、または、Al、CuおよびAgから成るグループから選択された2元合金材料もしくは3元合金材料から成り、前記第1のTi層の上に形成された第2の軟金属層であって、当該第2の軟金属層の厚さの20%以上の粒子サイズの金属粒子をその最上層に有する第2の軟金属層と、
前記第2の軟金属層の上にある第2のTi層とを含み、
室温より高い温度でアニールしたときに、2つの軟金属層の間に挟まれた少なくとも前記第1のTi層がTiAl3に転換させ、電流が前記第1のTi層を通過するときに前記TiAl3を通しての前記軟金属の原子の拡散を生じさせることにより、前記軟金属導体のエレクトロマイグレーション抵抗を改善した軟金属導体。
(2)前記第2のTi層が30nm未満の厚さを有することを特徴とする上記(1)に記載の軟金属導体。
(3)前記第1のTi層が、バイアの最下部に位置することを特徴とする上記(2)に記載の軟金属導体。
12 酸化物層
14 酸化物
16 Tiの層
18 Al−Cuの層
20 TiNの層
M1 Ti/Al−Cu/Tiの層
M2 Ti/Al−Cu/Tiの層
Claims (1)
- 半導体素子に使用するための軟金属導体において、
Al−Cu合金から成る第1の軟金属層と、
前記第1の軟金属層の上に形成されるTiAl3層であって、前記第1の軟金属層の上に形成したTi層をアニールによって転換してなるTiAl3層と、
Al−Cu合金から成り、前記TiAl3層の上にバイア構造として形成された第2の軟金属層
とを含み、
前記TiAl3層が、前記バイアの最下部の肩部において存在しない態様で該最下部に形成され、
電流が前記TiAl3層を通過するときに前記TiAl3層を通しての前記軟金属の原子の拡散を生じさせることにより、前記軟金属導体のエレクトロマイグレーション抵抗を改善した軟金属導体。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US367565 | 1995-01-03 | ||
US08/367,565 US6285082B1 (en) | 1995-01-03 | 1995-01-03 | Soft metal conductor |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7340833A Division JPH08236481A (ja) | 1995-01-03 | 1995-12-27 | 軟金属導体およびその形成方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006066930A JP2006066930A (ja) | 2006-03-09 |
JP4771526B2 true JP4771526B2 (ja) | 2011-09-14 |
Family
ID=23447700
Family Applications (4)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7340833A Pending JPH08236481A (ja) | 1995-01-03 | 1995-12-27 | 軟金属導体およびその形成方法 |
JP2003091887A Expired - Lifetime JP4215546B2 (ja) | 1995-01-03 | 2003-03-28 | 軟金属導体およびその形成方法 |
JP2005295811A Expired - Lifetime JP4771526B2 (ja) | 1995-01-03 | 2005-10-11 | 軟金属導体 |
JP2008106417A Expired - Lifetime JP5132400B2 (ja) | 1995-01-03 | 2008-04-16 | 軟金属導体およびその形成方法 |
Family Applications Before (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7340833A Pending JPH08236481A (ja) | 1995-01-03 | 1995-12-27 | 軟金属導体およびその形成方法 |
JP2003091887A Expired - Lifetime JP4215546B2 (ja) | 1995-01-03 | 2003-03-28 | 軟金属導体およびその形成方法 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008106417A Expired - Lifetime JP5132400B2 (ja) | 1995-01-03 | 2008-04-16 | 軟金属導体およびその形成方法 |
Country Status (6)
Country | Link |
---|---|
US (4) | US6285082B1 (ja) |
EP (1) | EP0721216B1 (ja) |
JP (4) | JPH08236481A (ja) |
KR (1) | KR100239027B1 (ja) |
DE (1) | DE69517295T2 (ja) |
TW (1) | TW351833B (ja) |
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-
1995
- 1995-01-03 US US08/367,565 patent/US6285082B1/en not_active Expired - Lifetime
- 1995-12-15 EP EP95119793A patent/EP0721216B1/en not_active Expired - Lifetime
- 1995-12-15 DE DE69517295T patent/DE69517295T2/de not_active Expired - Lifetime
- 1995-12-18 TW TW084113521A patent/TW351833B/zh not_active IP Right Cessation
- 1995-12-21 KR KR1019950053758A patent/KR100239027B1/ko not_active IP Right Cessation
- 1995-12-27 JP JP7340833A patent/JPH08236481A/ja active Pending
-
1997
- 1997-07-29 US US08/902,616 patent/US6030895A/en not_active Expired - Lifetime
-
1998
- 1998-07-09 US US09/112,885 patent/US6335569B1/en not_active Expired - Lifetime
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2002
- 2002-01-18 US US10/052,451 patent/US20020096768A1/en not_active Abandoned
-
2003
- 2003-03-28 JP JP2003091887A patent/JP4215546B2/ja not_active Expired - Lifetime
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2005
- 2005-10-11 JP JP2005295811A patent/JP4771526B2/ja not_active Expired - Lifetime
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Also Published As
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JPH08236481A (ja) | 1996-09-13 |
DE69517295T2 (de) | 2000-12-21 |
US20020096768A1 (en) | 2002-07-25 |
US6335569B1 (en) | 2002-01-01 |
KR100239027B1 (ko) | 2000-01-15 |
TW351833B (en) | 1999-02-01 |
DE69517295D1 (de) | 2000-07-06 |
JP4215546B2 (ja) | 2009-01-28 |
EP0721216B1 (en) | 2000-05-31 |
JP2004006768A (ja) | 2004-01-08 |
EP0721216A3 (ja) | 1996-08-14 |
JP2008182269A (ja) | 2008-08-07 |
US6285082B1 (en) | 2001-09-04 |
JP2006066930A (ja) | 2006-03-09 |
EP0721216A2 (en) | 1996-07-10 |
JP5132400B2 (ja) | 2013-01-30 |
US6030895A (en) | 2000-02-29 |
KR960030335A (ko) | 1996-08-17 |
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