JP4769429B2 - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法 Download PDF

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Publication number
JP4769429B2
JP4769429B2 JP2004155881A JP2004155881A JP4769429B2 JP 4769429 B2 JP4769429 B2 JP 4769429B2 JP 2004155881 A JP2004155881 A JP 2004155881A JP 2004155881 A JP2004155881 A JP 2004155881A JP 4769429 B2 JP4769429 B2 JP 4769429B2
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JP
Japan
Prior art keywords
wafer
manufacturing
semiconductor device
semiconductor wafer
tape
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2004155881A
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English (en)
Japanese (ja)
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JP2005340423A (ja
JP2005340423A5 (enExample
Inventor
由之 阿部
忠一 宮崎
俊英 植松
稔 木村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Electronics Corp
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Renesas Electronics Corp
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Filing date
Publication date
Application filed by Renesas Electronics Corp filed Critical Renesas Electronics Corp
Priority to JP2004155881A priority Critical patent/JP4769429B2/ja
Publication of JP2005340423A publication Critical patent/JP2005340423A/ja
Publication of JP2005340423A5 publication Critical patent/JP2005340423A5/ja
Application granted granted Critical
Publication of JP4769429B2 publication Critical patent/JP4769429B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H10P54/00—
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/40—Removing material taking account of the properties of the material involved
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/50—Working by transmitting the laser beam through or within the workpiece
    • B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
    • H10P72/7402—
    • H10W46/00—
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/16—Composite materials, e.g. fibre reinforced
    • B23K2103/166—Multilayered materials
    • B23K2103/172—Multilayered materials wherein at least one of the layers is non-metallic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
    • H10P72/7416—
    • H10P72/742—
    • H10P72/7422—
    • H10P72/744—
    • H10P74/277—
    • H10W46/101—
    • H10W46/301—
    • H10W46/503—
    • H10W72/0198—
    • H10W72/073—
    • H10W72/075—
    • H10W72/877—
    • H10W72/884—
    • H10W72/932—
    • H10W74/00—
    • H10W90/724—
    • H10W90/732—
    • H10W90/734—
    • H10W90/736—
    • H10W90/754—
    • H10W90/756—

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Laser Beam Processing (AREA)
  • Dicing (AREA)
JP2004155881A 2004-05-26 2004-05-26 半導体装置の製造方法 Expired - Fee Related JP4769429B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2004155881A JP4769429B2 (ja) 2004-05-26 2004-05-26 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004155881A JP4769429B2 (ja) 2004-05-26 2004-05-26 半導体装置の製造方法

Publications (3)

Publication Number Publication Date
JP2005340423A JP2005340423A (ja) 2005-12-08
JP2005340423A5 JP2005340423A5 (enExample) 2007-07-05
JP4769429B2 true JP4769429B2 (ja) 2011-09-07

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ID=35493652

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004155881A Expired - Fee Related JP4769429B2 (ja) 2004-05-26 2004-05-26 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JP4769429B2 (enExample)

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4833657B2 (ja) * 2005-12-19 2011-12-07 株式会社ディスコ ウエーハの分割方法
JP2007207871A (ja) * 2006-01-31 2007-08-16 Denso Corp 複数の半導体装置を備えた半導体ウェハ
JP2007250598A (ja) * 2006-03-14 2007-09-27 Renesas Technology Corp 半導体装置の製造方法
JP4480728B2 (ja) 2006-06-09 2010-06-16 パナソニック株式会社 Ｍｅｍｓマイクの製造方法
JP4910746B2 (ja) * 2007-02-13 2012-04-04 セイコーエプソン株式会社 基材の分割方法、及び液滴吐出ヘッドの製造方法。
JP4835583B2 (ja) * 2007-11-26 2011-12-14 パナソニック株式会社 ダイアタッチフィルム付きの半導体装置の製造方法
JP5163358B2 (ja) * 2008-03-26 2013-03-13 日立化成株式会社 半導体ウエハのダイシング方法
JP5217557B2 (ja) * 2008-03-27 2013-06-19 パナソニック株式会社 電子部品の製造方法
US8017942B2 (en) 2008-11-25 2011-09-13 Infineon Technologies Ag Semiconductor device and method
JP2010177277A (ja) * 2009-01-27 2010-08-12 Tokyo Seimitsu Co Ltd レーザーダイシング方法及びレーザーダイシング装置
JP5401301B2 (ja) 2009-12-28 2014-01-29 ルネサスエレクトロニクス株式会社 半導体装置の製造方法及び半導体装置
JP2012089709A (ja) * 2010-10-20 2012-05-10 Disco Abrasive Syst Ltd ワークの分割方法
JP2012134333A (ja) * 2010-12-22 2012-07-12 Disco Abrasive Syst Ltd 測定方法
US8809120B2 (en) 2011-02-17 2014-08-19 Infineon Technologies Ag Method of dicing a wafer
JP2012070004A (ja) * 2011-12-21 2012-04-05 Mitsumi Electric Co Ltd 半導体装置の製造方法
US9040389B2 (en) 2012-10-09 2015-05-26 Infineon Technologies Ag Singulation processes
JP2015056605A (ja) 2013-09-13 2015-03-23 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP5770245B2 (ja) * 2013-10-28 2015-08-26 ルネサスエレクトロニクス株式会社 半導体装置
JP5906265B2 (ja) * 2014-03-03 2016-04-20 株式会社ディスコ ウエーハの分割方法
JP6633447B2 (ja) * 2016-04-27 2020-01-22 株式会社ディスコ ウエーハの加工方法
JP6633446B2 (ja) * 2016-04-27 2020-01-22 株式会社ディスコ ウエーハの加工方法
JP2018074083A (ja) * 2016-11-02 2018-05-10 株式会社ディスコ ウエーハの加工方法
KR102399356B1 (ko) * 2017-03-10 2022-05-19 삼성전자주식회사 기판, 기판의 쏘잉 방법, 및 반도체 소자
JP6888809B2 (ja) * 2017-03-30 2021-06-16 三星ダイヤモンド工業株式会社 金属膜付き脆性材料基板の分断方法並びに分断装置
JP6903532B2 (ja) * 2017-09-20 2021-07-14 キオクシア株式会社 半導体装置およびその製造方法
JP7049941B2 (ja) * 2018-06-22 2022-04-07 株式会社ディスコ ウエーハの加工方法
JP7401183B2 (ja) * 2018-08-07 2023-12-19 株式会社ディスコ ウェーハの加工方法
KR102653165B1 (ko) * 2018-11-22 2024-04-01 삼성전자주식회사 반도체 장치, 반도체 칩 및 반도체 기판의 반도체 기판의 소잉 방법
US11031308B2 (en) * 2019-05-30 2021-06-08 Sandisk Technologies Llc Connectivity detection for wafer-to-wafer alignment and bonding
KR102868185B1 (ko) 2019-08-16 2025-10-01 삼성전자주식회사 반도체 기판 및 이의 절단 방법
JP7459490B2 (ja) * 2019-11-28 2024-04-02 株式会社ソシオネクスト 半導体ウェハ及び半導体装置
CN113972143A (zh) * 2021-10-18 2022-01-25 长鑫存储技术有限公司 半导体结构的键合方法和半导体设备

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000216123A (ja) * 1999-01-22 2000-08-04 Okamoto Machine Tool Works Ltd ウエハの裏面研削およびダイシング方法
JP3368876B2 (ja) * 1999-11-05 2003-01-20 株式会社東京精密 半導体チップ製造方法
JP3339485B2 (ja) * 2000-01-24 2002-10-28 日本電気株式会社 半導体装置
JP2002093750A (ja) * 2000-09-13 2002-03-29 Toshiba Microelectronics Corp 半導体装置
JP3624909B2 (ja) * 2002-03-12 2005-03-02 浜松ホトニクス株式会社 レーザ加工方法
JP2004079746A (ja) * 2002-08-16 2004-03-11 Tokyo Seimitsu Co Ltd チップ製造方法
JP2004111601A (ja) * 2002-09-18 2004-04-08 Tokyo Seimitsu Co Ltd ダイボンダ
JP3825753B2 (ja) * 2003-01-14 2006-09-27 株式会社東芝 半導体装置の製造方法

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JP2005340423A (ja) 2005-12-08

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