JP4756221B2 - 半導体記憶装置 - Google Patents

半導体記憶装置 Download PDF

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Publication number
JP4756221B2
JP4756221B2 JP2010147238A JP2010147238A JP4756221B2 JP 4756221 B2 JP4756221 B2 JP 4756221B2 JP 2010147238 A JP2010147238 A JP 2010147238A JP 2010147238 A JP2010147238 A JP 2010147238A JP 4756221 B2 JP4756221 B2 JP 4756221B2
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diffusion layer
transistor
layer
nmos
transistors
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JP2010272874A (ja
JP2010272874A5 (enrdf_load_stackoverflow
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富士雄 舛岡
紳太郎 新井
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Unisantis Electronics Japan Ltd
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Unisantis Electronics Japan Ltd
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  • Insulated Gate Type Field-Effect Transistor (AREA)
JP2010147238A 2010-06-29 2010-06-29 半導体記憶装置 Active JP4756221B2 (ja)

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JP2010147238A JP4756221B2 (ja) 2010-06-29 2010-06-29 半導体記憶装置

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JP2010147238A JP4756221B2 (ja) 2010-06-29 2010-06-29 半導体記憶装置

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JP2009123882 Division 2009-05-22 2009-05-22

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JP2010272874A JP2010272874A (ja) 2010-12-02
JP2010272874A5 JP2010272874A5 (enrdf_load_stackoverflow) 2011-01-20
JP4756221B2 true JP4756221B2 (ja) 2011-08-24

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Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9117528B2 (en) 2014-01-20 2015-08-25 Unisantis Electronics Singapore Pte. Ltd. Semiconductor device
US9449988B2 (en) 2013-08-08 2016-09-20 Unisantis Electronics Singapore Pte. Ltd. Semiconductor device with six transistors forming a nor circuit
US9484424B2 (en) 2013-07-30 2016-11-01 Unisantis Electronics Singapore Pte. Ltd. Semiconductor device with a NAND circuit having four transistors
US9590631B2 (en) 2014-04-22 2017-03-07 Unisantis Electronics Singapore Pte. Ltd. Semiconductor device
US9601510B2 (en) 2013-08-08 2017-03-21 Unisantis Electronics Singapore Pte. Ltd. Semiconductor device with six transistors forming a NAND circuit
US9627496B2 (en) 2013-07-30 2017-04-18 Unisantis Electronics Singapore Pte. Ltd. Semiconductor with a two-input NOR circuit
US9627407B2 (en) 2014-04-22 2017-04-18 Unisantis Electronics Singapore Pte. Ltd. Semiconductor device comprising a NOR decoder with an inverter
US9641179B2 (en) 2014-04-10 2017-05-02 Unisantis Electronics Singapore Pte. Ltd. Semiconductor device
US9646991B2 (en) 2013-09-03 2017-05-09 Unisantis Electronics Singapore Pte. Ltd. Semiconductor device with surrounding gate transistors in a NOR circuit
US9716092B2 (en) 2013-09-03 2017-07-25 Unisantis Electronics Singapore Pte. Ltd. Semiconductor device with surrounding gate transistors in a NAND circuit
US9876504B2 (en) 2014-04-10 2018-01-23 Unisantis Electronics Singapore Pte. Ltd. Semiconductor device

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8759178B2 (en) 2011-11-09 2014-06-24 Unisantis Electronics Singapore Pte. Ltd. Method for manufacturing semiconductor device and semiconductor device
US10438836B2 (en) 2011-11-09 2019-10-08 Unisantis Electronics Singapore Pte. Ltd. Method for manufacturing a semiconductor device
JP5695745B2 (ja) * 2011-11-09 2015-04-08 ユニサンティス エレクトロニクス シンガポール プライベート リミテッドＵｎｉｓａｎｔｉｓ Ｅｌｅｃｔｒｏｎｉｃｓ Ｓｉｎｇａｐｏｒｅ Ｐｔｅ Ｌｔｄ． 半導体装置の製造方法及び半導体装置
JP5749818B2 (ja) * 2012-06-08 2015-07-15 ユニサンティス エレクトロニクス シンガポール プライベート リミテッドＵｎｉｓａｎｔｉｓ Ｅｌｅｃｔｒｏｎｉｃｓ Ｓｉｎｇａｐｏｒｅ Ｐｔｅ Ｌｔｄ． 半導体装置の製造方法、及び、半導体装置
US8836051B2 (en) 2012-06-08 2014-09-16 Unisantis Electronics Singapore Pte. Ltd. Method for producing semiconductor device and semiconductor device
US9000513B2 (en) 2012-11-12 2015-04-07 Unisantis Electronics Singapore Pte. Ltd. Method for manufacturing a semiconductor device and semiconductor device with surrounding gate transistor
WO2014171014A1 (ja) * 2013-04-19 2014-10-23 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド 半導体装置の製造方法、及び、半導体装置
WO2015037086A1 (ja) * 2013-09-11 2015-03-19 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド 半導体装置
WO2015071966A1 (ja) * 2013-11-12 2015-05-21 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド 半導体装置
WO2015071965A1 (ja) * 2013-11-12 2015-05-21 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド 半導体装置
WO2015087413A1 (ja) * 2013-12-11 2015-06-18 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド 半導体装置
WO2015097800A1 (ja) * 2013-12-26 2015-07-02 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド 半導体装置
JP5936653B2 (ja) * 2014-08-06 2016-06-22 ユニサンティス エレクトロニクス シンガポール プライベート リミテッドＵｎｉｓａｎｔｉｓ Ｅｌｅｃｔｒｏｎｉｃｓ Ｓｉｎｇａｐｏｒｅ Ｐｔｅ Ｌｔｄ． 半導体装置
JP5869079B2 (ja) * 2014-09-02 2016-02-24 ユニサンティス エレクトロニクス シンガポール プライベート リミテッドＵｎｉｓａｎｔｉｓ Ｅｌｅｃｔｒｏｎｉｃｓ Ｓｉｎｇａｐｏｒｅ Ｐｔｅ Ｌｔｄ． 半導体装置の製造方法、及び、半導体装置
JP6156883B2 (ja) * 2015-02-06 2017-07-05 ユニサンティス エレクトロニクス シンガポール プライベート リミテッドＵｎｉｓａｎｔｉｓ Ｅｌｅｃｔｒｏｎｉｃｓ Ｓｉｎｇａｐｏｒｅ Ｐｔｅ Ｌｔｄ． 半導体装置の製造方法及び半導体装置
JP6427068B2 (ja) * 2015-05-27 2018-11-21 ユニサンティス エレクトロニクス シンガポール プライベート リミテッドＵｎｉｓａｎｔｉｓ Ｅｌｅｃｔｒｏｎｉｃｓ Ｓｉｎｇａｐｏｒｅ Ｐｔｅ Ｌｔｄ． 半導体装置
WO2017077578A1 (ja) * 2015-11-02 2017-05-11 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド 半導体装置
JP6329301B2 (ja) * 2017-05-01 2018-05-23 ユニサンティス エレクトロニクス シンガポール プライベート リミテッドＵｎｉｓａｎｔｉｓ Ｅｌｅｃｔｒｏｎｉｃｓ Ｓｉｎｇａｐｏｒｅ Ｐｔｅ Ｌｔｄ． 半導体装置の製造方法及び半導体装置
JP6503421B2 (ja) * 2017-09-06 2019-04-17 ユニサンティス エレクトロニクス シンガポール プライベート リミテッドＵｎｉｓａｎｔｉｓ Ｅｌｅｃｔｒｏｎｉｃｓ Ｓｉｎｇａｐｏｒｅ Ｐｔｅ Ｌｔｄ． 半導体装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03225873A (ja) * 1990-01-30 1991-10-04 Mitsubishi Electric Corp 半導体装置
JP3403231B2 (ja) * 1993-05-12 2003-05-06 三菱電機株式会社 半導体装置およびその製造方法
JPH1079482A (ja) * 1996-08-09 1998-03-24 Rai Hai 超高密度集積回路
US6304483B1 (en) * 1998-02-24 2001-10-16 Micron Technology, Inc. Circuits and methods for a static random access memory using vertical transistors
JP4674386B2 (ja) * 1999-02-17 2011-04-20 ソニー株式会社 半導体記憶装置
JP2005078741A (ja) * 2003-09-02 2005-03-24 Renesas Technology Corp 半導体記憶装置
JP5114968B2 (ja) * 2007-02-20 2013-01-09 富士通セミコンダクター株式会社 半導体装置及びその製造方法
JP5503971B2 (ja) * 2007-11-07 2014-05-28 ルネサスエレクトロニクス株式会社 半導体装置

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9484424B2 (en) 2013-07-30 2016-11-01 Unisantis Electronics Singapore Pte. Ltd. Semiconductor device with a NAND circuit having four transistors
US9627496B2 (en) 2013-07-30 2017-04-18 Unisantis Electronics Singapore Pte. Ltd. Semiconductor with a two-input NOR circuit
US9449988B2 (en) 2013-08-08 2016-09-20 Unisantis Electronics Singapore Pte. Ltd. Semiconductor device with six transistors forming a nor circuit
US9601510B2 (en) 2013-08-08 2017-03-21 Unisantis Electronics Singapore Pte. Ltd. Semiconductor device with six transistors forming a NAND circuit
US9646991B2 (en) 2013-09-03 2017-05-09 Unisantis Electronics Singapore Pte. Ltd. Semiconductor device with surrounding gate transistors in a NOR circuit
US9716092B2 (en) 2013-09-03 2017-07-25 Unisantis Electronics Singapore Pte. Ltd. Semiconductor device with surrounding gate transistors in a NAND circuit
US9117528B2 (en) 2014-01-20 2015-08-25 Unisantis Electronics Singapore Pte. Ltd. Semiconductor device
US9641179B2 (en) 2014-04-10 2017-05-02 Unisantis Electronics Singapore Pte. Ltd. Semiconductor device
US9876504B2 (en) 2014-04-10 2018-01-23 Unisantis Electronics Singapore Pte. Ltd. Semiconductor device
US9590631B2 (en) 2014-04-22 2017-03-07 Unisantis Electronics Singapore Pte. Ltd. Semiconductor device
US9627407B2 (en) 2014-04-22 2017-04-18 Unisantis Electronics Singapore Pte. Ltd. Semiconductor device comprising a NOR decoder with an inverter

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