JP4725046B2 - ディスプレイ用プラスチック基板および表示素子 - Google Patents
ディスプレイ用プラスチック基板および表示素子 Download PDFInfo
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- JP4725046B2 JP4725046B2 JP2004201584A JP2004201584A JP4725046B2 JP 4725046 B2 JP4725046 B2 JP 4725046B2 JP 2004201584 A JP2004201584 A JP 2004201584A JP 2004201584 A JP2004201584 A JP 2004201584A JP 4725046 B2 JP4725046 B2 JP 4725046B2
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- Prior art keywords
- plastic substrate
- display
- fumaric acid
- substrate
- acid diester
- Prior art date
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- 239000000758 substrate Substances 0.000 title claims description 122
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- 239000004033 plastic Substances 0.000 title claims description 87
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- 239000011347 resin Substances 0.000 claims description 55
- -1 fumaric acid diester Chemical class 0.000 claims description 49
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 claims description 45
- VZCYOOQTPOCHFL-OWOJBTEDSA-N Fumaric acid Natural products OC(=O)\C=C\C(O)=O VZCYOOQTPOCHFL-OWOJBTEDSA-N 0.000 claims description 44
- 239000001530 fumaric acid Substances 0.000 claims description 44
- 239000003963 antioxidant agent Substances 0.000 claims description 33
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- 230000004888 barrier function Effects 0.000 claims description 15
- 238000005259 measurement Methods 0.000 claims description 15
- 238000002834 transmittance Methods 0.000 claims description 11
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 9
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 9
- 238000005227 gel permeation chromatography Methods 0.000 claims description 7
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 claims description 6
- 230000008859 change Effects 0.000 claims description 6
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- BLKQQTCUGZJWLN-VAWYXSNFSA-N dicyclohexyl (e)-but-2-enedioate Chemical group C1CCCCC1OC(=O)/C=C/C(=O)OC1CCCCC1 BLKQQTCUGZJWLN-VAWYXSNFSA-N 0.000 description 3
- SIISCSYILCBRQH-MDZDMXLPSA-N dicyclopentyl (e)-but-2-enedioate Chemical group C1CCCC1OC(=O)/C=C/C(=O)OC1CCCC1 SIISCSYILCBRQH-MDZDMXLPSA-N 0.000 description 3
- MSVGHYYKWDQHFV-BQYQJAHWSA-N ditert-butyl (e)-but-2-enedioate Chemical group CC(C)(C)OC(=O)\C=C\C(=O)OC(C)(C)C MSVGHYYKWDQHFV-BQYQJAHWSA-N 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
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- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 3
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- 239000003505 polymerization initiator Substances 0.000 description 3
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- PSGCQDPCAWOCSH-UHFFFAOYSA-N (4,7,7-trimethyl-3-bicyclo[2.2.1]heptanyl) prop-2-enoate Chemical compound C1CC2(C)C(OC(=O)C=C)CC1C2(C)C PSGCQDPCAWOCSH-UHFFFAOYSA-N 0.000 description 2
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- IYAZLDLPUNDVAG-UHFFFAOYSA-N 2-(benzotriazol-2-yl)-4-(2,4,4-trimethylpentan-2-yl)phenol Chemical compound CC(C)(C)CC(C)(C)C1=CC=C(O)C(N2N=C3C=CC=CC3=N2)=C1 IYAZLDLPUNDVAG-UHFFFAOYSA-N 0.000 description 2
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- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G63/00—Macromolecular compounds obtained by reactions forming a carboxylic ester link in the main chain of the macromolecule
- C08G63/66—Polyesters containing oxygen in the form of ether groups
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
- B32B27/36—Layered products comprising a layer of synthetic resin comprising polyesters
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G63/00—Macromolecular compounds obtained by reactions forming a carboxylic ester link in the main chain of the macromolecule
- C08G63/02—Polyesters derived from hydroxycarboxylic acids or from polycarboxylic acids and polyhydroxy compounds
- C08G63/12—Polyesters derived from hydroxycarboxylic acids or from polycarboxylic acids and polyhydroxy compounds derived from polycarboxylic acids and polyhydroxy compounds
- C08G63/16—Dicarboxylic acids and dihydroxy compounds
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L35/00—Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a carboxyl radical, and containing at least one other carboxyl radical in the molecule, or of salts, anhydrides, esters, amides, imides or nitriles thereof; Compositions of derivatives of such polymers
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/04—Optical elements characterised by the material of which they are made; Optical coatings for optical elements made of organic materials, e.g. plastics
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
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Description
ゲル・パーミエイション・クロマトグラフィー(GPC)(東ソー(株)製、商品名HLC−802A)を用い測定した樹脂の溶出曲線により、標準ポリスチレン換算値として測定した。
示差走査型熱量計(セイコー電子工業(株)製、商品名DSC2000)を用い、10℃/min.の昇温速度にて測定した。
透明性の一評価として、JIS K7105(1981年版)に準拠して全光線透過率の測定を行った。
透明性の一評価として、JIS K7105(1981年版)に準拠してヘーズの測定を行った。
JIS K 7142(1981年版)に準拠して測定を行った。
光弾性定数は、光レオメーター(オーク製作所製、商品名HRS−100)を用い、引張速度1%/sで測定した。
高分子素材の偏光顕微鏡入門(粟屋裕著、アグネ技術センター版、第5章、pp78〜82(2001))に記載のセナルモン・コンペンセーターを用いた偏光顕微鏡(Senarmont干渉法)により位相差量の測定を行った。
樹脂の耐熱性は、所定温度に設定されたオーブン中に作成した基板を1時間放置し、変形、着色の見られない最高温度とした。
3リットルオートクレーブ中に、部分ケン化ポリビニルアルコール0.2wt%を含む蒸留水1800g、フマル酸ジイソプロピル300g、重合開始剤としてアゾビスイソ酪酸ジメチル0.35gを仕込み、重合温度55℃、重合時間50時間の条件にて懸濁ラジカル重合反応を行った。得られ重合体粒子を濾過回収し、メタノールで十分に洗浄し80℃にて乾燥することにより、フマル酸ジイソプロピル単独樹脂を得た。得られたフマル酸ジイソプロピル単独樹脂の数平均分子量は60000であった。
フマル酸ジイソプロピルの代わりに、フマル酸ジ−n−ブチルを用いた以外は合成例1と同様の方法により、フマル酸ジ−n−ブチル単独樹脂を得た。
合成例1により得られたフマル酸ジイソプロピル単独樹脂をクロロフォルムに溶解し20重量%溶液とし、さらにフマル酸ジイソプロピル単独樹脂100重量部に対し、酸化防止剤としてトリス(2,4−ジ−t−ブチルフェニル)フォスファイト0.35重量部およびペンタエリスリトール−テトラキス(3−(3,5−ジ−t−ブチル−4−ヒドロキシフェニル)プロピオネート)0.15重量部を添加した後、Tダイ法により溶液流延装置の支持体に流延し、乾燥温度40℃、次いで80℃、さらに120℃と段階的に乾燥した後、幅300mm、厚み120μmのディスプレイ用プラスチック基板を得た。
合成例1により得られたフマル酸ジイソプロピル単独樹脂をテトラヒドロフラン(THF)に溶解し20%溶液とし、さらにフマル酸ジイソプロピル単独樹脂100重量部に対し、酸化防止剤としてトリス(2,4−ジ−t−ブチルフェニル)フォスファイト0.35重量部およびペンタエリスリトール−テトラキス(3−(3,5−ジ−t−ブチル−4−ヒドロキシフェニル)プロピオネート)0.15重量部を添加した後、Tダイ法により溶液流延装置の支持体に流延し、乾燥温度40℃、次いで80℃、さらに120℃と段階的に乾燥した後、幅300mm、厚み150μmの基材を得た。
ポリエーテルサルフォン(アルドリッチ製)を用いて、実施例1と同様の方法により、厚み120μmのプラスチック基材を得た。
ポリカーボネート(アルドリッチ製)を用いて、実施例1と同様の方法により、厚み120μmのプラスチック基材を得た。
合成例2により得られたフマル酸ジ−n−ブチル単独重合体を用いて、実施例1と同様の方法により、プラスチック基材の製造を試みたが、乾燥工程で軟化し良好なプラスチック基材を作成することができなかった。別途、該フマル酸ジ−n−ブチル単独樹脂よりなる基材の耐熱温度を測定したところ、20℃程度と低いものであった。
合成例1により得られたフマル酸ジイソプロピル単独樹脂100重量部に対し、ヒンダードフェノール系酸化防止剤としてペンタエリスリトールテトラキス(3−(3,5−ジ−t−ブチル−4−ヒドロキシフェニル)プロピオネート)、リン系酸化防止剤としてビス(2,6−ジ−t−ブチル−4−メチルフェニル)ペンタエリスリトールジホスファイトを酸化防止剤として表2に記載の量、クロロフォルム400重量部を配合することにより溶液を得た。そして、該溶液により実施例1と同様の方法により厚み140μmのディスプレイ用プラスチック基板を得た。
実施例7により得られたディスプレイ用プラスチック基板を熱処理なし、200℃,1時間、220℃,1時間による熱処理を行った。それぞれのディスプレイ用プラスチック基板を室温から200℃に加熱し一時間保持を行った後、再び室温に戻した際の寸法を測定し寸法変化率を評価した。その結果を表3に示す。
合成例1により得られたフマル酸ジイソプロピル単独樹脂100重量部に対し、ペンタエリスリトールテトラキス(3−(3,5−ジ−t−ブチル−4−ヒドロキシフェニル)プロピオネート)0.35重量部、ビス(2,6−ジ−t−ブチル−4−メチルフェニル)ペンタエリスリトールジホスファイト1.05重量部、クロロフォルム400重量部を配合することにより溶液を得た。そして、該溶液により実施例1と同様の方法により厚み140μmのディスプレイ用プラスチック基板を得、さらに220℃で1時間熱処理を行った。
実施例12により得られたディスプレイ用プラスチック基板の両面に製膜温度:室温、バックグランド圧:1×10−7torr、スパッタガス圧0.6Pa(Ar:80SCCM、N2:20SCCM)、印加電圧:RFマグネトロン500Wの条件で、スパッタにより厚み100nmの窒化ケイ素膜を形成した。同様に酸化ケイ素膜、窒化酸化ケイ素膜を両面に形成したディスプレイ用プラスチック基板を得た。
実施例12により得られたディスプレイ用プラスチック基板の表面硬度、耐スチールウール性、N−メチル−2−ピロリドンに対する耐溶剤性を評価した結果を表5に示す。
実施例12により得られたディスプレイ用プラスチック基板の両面に、紫外線硬化型ウレタンアクリレート75重量、1,6−ヘキサンジオールアクリレート10重量部、イソボルニルアクリレート10重量部、光開始剤(チバスペシャルティーケミカル製、商品名ダロキュア1173)3.5重量部、酸化防止剤(チバスペシャルティーケミカル製、商品名Irganox1010)1.4重量部、シリコン系レベリング剤0.1重量部からなる紫外線硬化型樹脂組成物をコーターで4μmの厚みに塗布し、高圧水銀灯で紫外線照射し、ハードコート層を有するディスプレイ用プラスチック基板を調製し、実施例16と同様の方法により評価した結果を表5に示す。得られたディスプレイ用プラスチック基板は、優れた表面硬度を有したものであった。
実施例13により得られた窒化ケイ素膜を有するディスプレイ用プラスチック基板に、紫外線硬化型エポキシアクリレート60重量部、1,6−ヘキサンジオールアクリレート20重量部、イソボルニルアクリレート15重量部、光開始剤(チバスペシャルティーケミカル製、商品名ダロキュア1173)3.5重量部、酸化防止剤(チバスペシャルティーケミカル製、商品名Irganox1010)1.4重量部、シリコン系レベリング剤0.1重量部からなる紫外線硬化型樹脂組成物をコーターで4μmの厚みに塗布し、高圧水銀灯で紫外線照射し、ガスバリア層及びハードコート層を有するディスプレイ用プラスチック基板を調製し、実施例16と同様の方法により評価した結果を表5に示す。得られたディスプレイ用プラスチック基板は、優れた表面硬度を有したものであった。
実施例18により得られたガスバリア層およびハードコート層を有するディスプレイ用プラスチック基板に、スパッタにより透明電極(ITO)を設けた(スパッタ温度:200℃)。更にITO層にポリイミド配向膜をスピンコートにより塗布し180℃で1時間ベーク後、ラビング処理を行った。このようにして作成した基板にスペーサーを散布し、2枚を上下ラビング方向が垂直となるようにシール剤で固定した。シール剤を硬化後真空注入により液晶を注入しエポキシ樹脂で封止し液晶セルを作成した。
Claims (13)
- 一般式(1)に示されるフマル酸ジエステル残基単位が100モル%であるフマル酸ジエステル単独樹脂よりなることを特徴とする請求項1に記載のディスプレイ用プラスチック基板。
- フマル酸ジエステル系樹脂100重量部に対し、ヒンダードフェノール系酸化防止剤/リン系酸化防止剤=100/0〜100/1000(重量比)からなる酸化防止剤0.01〜10重量部を含んでなることを特徴とする請求項1又は2のいずれかに記載のディスプレイ用プラスチック基板。
- フマル酸ジエステル系樹脂を1軸又は2軸延伸加工してなることを特徴とする請求項1〜3のいずれか1項に記載のディスプレイ用プラスチック基板。
- 測定波長400nmにおける光線透過率80%以上、JIS K7105(1981年版)に準拠したヘーズが2%以下であることを特徴とする請求項1〜4のいずれか1項に記載のディスプレイ用プラスチック基板。
- 厚みむらが10μm以下、かつ基板の正面から測定した位相差量が10nm以下、基板面内の位相差むらが5nm以下であることを特徴とする請求項1〜5のいずれか1項に記載のディスプレイ用プラスチック基板。
- 200℃に1時間保持した後、室温に戻した際の寸法変化率が絶対値として0.1%以下であることを特徴とする請求項1〜6のいずれか1項に記載のディスプレイ用プラスチック基板。
- さらに少なくとも一層以上のガスバリア層を積層してなる積層体であることを特徴とする請求項1〜7のいずれか1項に記載のディスプレイ用プラスチック基板。
- ガスバリア層が、窒化ケイ素、酸化ケイ素、窒化酸化ケイ素からなる群より選ばれる成分を主体とする層であることを特徴とする請求項8に記載のディスプレイ用プラスチック基板。
- さらに少なくとも一層以上のハードコート層を積層してなる積層体であることを特徴とする請求項1〜9のいずれか1項に記載のディスプレイ用プラスチック基板。
- ハードコート層が、紫外線硬化型樹脂であることを特徴とする請求項10に記載のディスプレイ用プラスチック基板。
- 請求項1〜11のいずれか1項に記載のディスプレイ用プラスチック基板を用いることを特徴とする表示素子。
- 請求項1〜11のいずれか1項に記載のディスプレイ用プラスチック基板を用いることを特徴とする液晶表示素子。
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JP2004201584A JP4725046B2 (ja) | 2003-08-20 | 2004-07-08 | ディスプレイ用プラスチック基板および表示素子 |
TW93124823A TWI353301B (en) | 2003-08-20 | 2004-08-18 | Plastic substrate for display and display element |
US10/921,212 US7160587B2 (en) | 2003-08-20 | 2004-08-19 | Plastic substrate for display and display element |
CNB2004100575768A CN100483192C (zh) | 2003-08-20 | 2004-08-20 | 显示器用塑料基板及显示元件 |
KR1020040065637A KR100939481B1 (ko) | 2003-08-20 | 2004-08-20 | 디스플레이용 플라스틱기판 및 표시소자 |
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Also Published As
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CN1584683A (zh) | 2005-02-23 |
KR20050020686A (ko) | 2005-03-04 |
CN100483192C (zh) | 2009-04-29 |
JP2005097544A (ja) | 2005-04-14 |
KR100939481B1 (ko) | 2010-01-29 |
US20050059777A1 (en) | 2005-03-17 |
TW200515996A (en) | 2005-05-16 |
US7160587B2 (en) | 2007-01-09 |
TWI353301B (en) | 2011-12-01 |
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