JP4711901B2 - 半導体処理装置において熱膨張差を有する材料間の結合に有用なシーリングデバイス及び方法 - Google Patents
半導体処理装置において熱膨張差を有する材料間の結合に有用なシーリングデバイス及び方法 Download PDFInfo
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- JP4711901B2 JP4711901B2 JP2006190468A JP2006190468A JP4711901B2 JP 4711901 B2 JP4711901 B2 JP 4711901B2 JP 2006190468 A JP2006190468 A JP 2006190468A JP 2006190468 A JP2006190468 A JP 2006190468A JP 4711901 B2 JP4711901 B2 JP 4711901B2
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- 238000007789 sealing Methods 0.000 title claims description 43
- 238000012545 processing Methods 0.000 title claims description 32
- 239000004065 semiconductor Substances 0.000 title claims description 24
- 239000000463 material Substances 0.000 title description 92
- 238000000034 method Methods 0.000 title description 30
- 239000000758 substrate Substances 0.000 claims description 98
- 229910052751 metal Inorganic materials 0.000 claims description 60
- 239000002184 metal Substances 0.000 claims description 60
- 238000001816 cooling Methods 0.000 claims description 49
- 238000012546 transfer Methods 0.000 claims description 27
- 238000010438 heat treatment Methods 0.000 claims description 23
- 239000000919 ceramic Substances 0.000 claims description 11
- 239000012298 atmosphere Substances 0.000 claims description 6
- 238000012544 monitoring process Methods 0.000 claims 3
- 239000007788 liquid Substances 0.000 claims 1
- 238000005219 brazing Methods 0.000 description 32
- 239000013529 heat transfer fluid Substances 0.000 description 15
- 230000008569 process Effects 0.000 description 14
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 12
- 239000003989 dielectric material Substances 0.000 description 10
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 8
- 239000007789 gas Substances 0.000 description 8
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical group N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 7
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 7
- 229910052782 aluminium Inorganic materials 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 239000004332 silver Substances 0.000 description 6
- 239000010935 stainless steel Substances 0.000 description 6
- 229910001220 stainless steel Inorganic materials 0.000 description 6
- 238000005240 physical vapour deposition Methods 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- 229910000990 Ni alloy Inorganic materials 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 4
- 239000012530 fluid Substances 0.000 description 4
- 229910000833 kovar Inorganic materials 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- 239000010937 tungsten Substances 0.000 description 4
- 229910001316 Ag alloy Inorganic materials 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 3
- 230000001747 exhibiting effect Effects 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910001092 metal group alloy Inorganic materials 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 239000011733 molybdenum Substances 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 229910052582 BN Inorganic materials 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910000640 Fe alloy Inorganic materials 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910001069 Ti alloy Inorganic materials 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 229910010293 ceramic material Inorganic materials 0.000 description 2
- 239000012809 cooling fluid Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910000531 Co alloy Inorganic materials 0.000 description 1
- 239000012491 analyte Substances 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000004568 cement Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 239000007822 coupling agent Substances 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/541—Heating or cooling of the substrates
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
-
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
-
- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S269/00—Work holders
- Y10S269/903—Work holder for electrical circuit assemblages or wiring systems
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S277/00—Seal for a joint or juncture
- Y10S277/913—Seal for fluid pressure below atmospheric, e.g. vacuum
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S277/00—Seal for a joint or juncture
- Y10S277/922—Bonding or joining for manufacture of seal
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S277/00—Seal for a joint or juncture
- Y10S277/931—Seal including temperature responsive feature
- Y10S277/932—Bi-metallic
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T279/00—Chucks or sockets
- Y10T279/23—Chucks or sockets with magnetic or electrostatic means
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T403/00—Joints and connections
- Y10T403/47—Molded joint
- Y10T403/477—Fusion bond, e.g., weld, etc.
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Physical Vapour Deposition (AREA)
- Gasket Seals (AREA)
- Diaphragms And Bellows (AREA)
- Drying Of Semiconductors (AREA)
- Sealing Devices (AREA)
- Resistance Heating (AREA)
Description
本発明は異なる圧力下で作動される半導体処理炉の2つの部分間にシール部材を与えるために使用される装置と方法に関する。特に、該半導体処理炉が広い温度範囲(約600℃)で作動し、シールが実質上異なる膨脹係数を有する2つの材料間を結合しなければならない場合に、当該装置と方法は特に有用である。
半導体デバイス等の電子部品の作成においては、製造処理(製造プロセス)は基板が約10-3Torr以下の分圧(a partial pressure)に露出されつつ冷却されることが頻繁に必要となる。その様な分圧真空状態下での基板冷却を要する処理(プロセス)としては、例えば、物理的蒸着法(PVD法)、イオンインジェクション法、及び特別な形態のプラズマエッチングがある。
上記に参照した米国特許は、冷却する事が含まれた場合、冷却は流体の流動を用いて達成される。a)接触している誘導体に適合した膨脹係数を持った、特殊な金属合金との直接接触によるか、または、b)誘電材料自体に直接接触させるかのいずれかである。これは、伝導/対流による熱伝達が実質的に不可能な部分真空下で、基板処理が行われる真空チャンバ全体が操作されるという理由で、必要になる。上記に参照した特許に記載された、この種の特殊金属合金ヒートシンクベースを用いることは、非常に高価である。更に、一般に記載されているこの種の誘電材料冷却流体との直接接触は、効果的な熱伝達を生じないかもしれず、かつ、結果として誘電材料自体の破壊につながるかもしれない。誘電体として、典型的に用いられるセラミック材料は、温度差に一般的に敏感であり、かつ、加熱要素とその近くの冷却要素との間の温度差は、そのセラミックに破壊を引き起こすかもしれない。
本願に従い、半導体処理リアクタにおいて異なる圧力で作動する2つの部分の間をシールする装置と方法が開示される。このようにシールを与えることにより、基板支持プラットフォームの少なくとも基板接触部分を除く部分を、伝導や対流の熱移動手段を用いた熱移動が可能となる適切な圧力下におきつつ、伝導や対流による熱移動が実用的でない不完全真空下での基板の処理を可能とする。
本発明は半導体処理(半導体プロセス)の間に、実質的に異なる線膨張係数を有する2つの材料間を結合するために用いられるシール手段であって、半導体処理チャンバの異なる部分が、例えば、室温から約600℃までの広い温度範囲にわたり、異なる絶対圧力下で作動される場合に関する。
以上説明したように本発明によれば、半導体処理チャンバの第1の部分が所定の圧力下で作動されると共に、前記処理チャンバの第2の部分がより高い圧力下で作動される時、前記処理(プロセス)チャンバの前記第1の部分と前記第2の部分を分離するために使用される半導体処理に有用なシール装置において、そのシール装置が少なくとも2つの異なる表面にろう付けされる薄い金属包含層(a thin, metal-comprising layer)を備えており、前記少なくとも2つの異なる表面が、600℃で計測された少なくとも3×10-3in./in./℃(3×10-3mm/mm/℃)の線膨張係数の差を有する場合に、前記シール装置は少なくとも約15psiの圧力差に耐える能力を有すると共に、異なる熱膨張係数を示す、少なくとも2つの材料の表面を準備し、結合される最も低い線膨張係数を有する材料に近い線膨張係数を有する材料の薄い金属包含層を提供し、前記シール部材によって結合されなくてはならない、少なくとも2つの材料の表面のそれぞれに対して、(材料の)前記金属包含層をろう付けすることで、シール装置として機能する。
Claims (19)
- 半導体処理の為の装置であって、
チャンバ雰囲気を内包するチャンバ容量を画成するチャンバと、
熱移動媒体を内包する膨張可能容量と、
前記チャンバ雰囲気から前記熱移動媒体を遮断し、かつ、前記チャンバ容量から前記膨張可能容量を分離する金属シール手段と、
を備え、
前記膨張可能容量は、
前記チャンバ容量内の第1の面、及び、前記膨張可能容量内の第2の面を有する基板支持平盤と、
前記基板支持平盤の前記第2の面に付設され、前記熱移動媒体を前記基板支持平盤の前記第2の面に近接させて保持するための保持手段と、
前記熱移動媒体のソースと前記保持手段との間に配置される展開可能部材と、
を備え、
前記金属シール手段が異なる熱膨張係数を有する2つの表面をシールして結合するものであり、
前記2つの表面のうちの一方の表面が、セラミックであり、該一方の表面に前記金属シール手段をろう付けさせたものである、
ことを特徴とする装置。 - 前記展開可能部材がベローズである、請求項1に記載の装置。
- 前記金属シール手段が、前記基板支持平盤の前記第2の面と前記保持手段との間に付設される、請求項1に記載の装置。
- 前記金属シール手段がメタルストラップであり、これは、一方のエッジに沿って、前記基板支持平盤の前記第2の面から伸びるフランジにろう付けされ、他方のエッジに沿って、前記保持手段にろう付けされる、請求項3に記載の装置。
- 前記保持手段がメタルで作られ、前記基板支持平盤の前記第2の面がセラミックで作られる、請求項3に記載の装置。
- 前記基板支持平盤が更に前記基板支持平盤の前記第1の面の温度を上昇させるための加熱手段を備える、請求項1に記載の装置。
- 前記保持手段が、前記基板支持平盤の前記第2の面を冷却するための冷却手段を取り囲む基板支持ハウジングを備える、請求項1に記載の装置。
- 前記冷却手段が冷却プレートを備え、前記冷却プレートが前記基板支持平盤の前記第2の面と前記冷却プレートとの間の接触を保持するばねを有する、請求項7に記載の装置。
- 前記冷却手段が更に熱移動液体を運ぶ冷却コイルを備え、前記装置が更に前記金属シール手段の一方のエッジにシールして接触する前記保持手段に結合された延長部材を備える、請求項8に記載の装置。
- 前記基板支持平盤が、更に、基板を静電力により前記基板支持平盤の前記第1の面に近接して保持するための、前記基板支持平盤の中に埋め込まれた静電保持手段を備える、請求項1に記載の装置。
- 前記装置が、更に、前記基板支持平盤の温度をモニタするための、前記基板支持平盤内に埋め込まれたモニタ手段を備える、請求項1に記載の装置。
- 前記モニタ手段が熱電対である、請求項11に記載の装置。
- 半導体処理の為の装置であって、
チャンバ雰囲気を内包するチャンバ容量を画成するチャンバと、
加熱移動媒体を内包する為の膨張可能容量と、
を具備し、
前記膨張可能容量が、
前記チャンバ容量内に第1の面、前記膨張可能容量内に第2の面を有する基板支持平盤と、
前記基板支持平盤の前記第2の面に付設され、前記加熱移動媒体を前記基板支持平盤の前記第2の面に近接させて保持するベースであって、前記平盤とは異なる熱膨張係数を有するベースと、
前記平盤と前記ベースとをシールして結合するメタルストリップであって、前記平盤のセラミック面及び前記ベースの金属面にろう付けされ、前記加熱移動媒体を前記チャンバ雰囲気から遮断し、前記チャンバ容量から前記膨張可能容量を分離する、メタルストリップと、
により画成される、
ことを特徴とする装置。 - 前記ベースに結合された延長部材であって、前記ベースと前記延長部材は、異なる熱膨張係数を有し、前記延長部材は、前記ストリップにろう付けされた金属面を備える、前記延長部材を更に備える、請求項13に記載の装置。
- 前記ストリップが前記金属面にろう付けされている、請求項13に記載の装置。
- 前記ストリップが金属バンドを更に備える、請求項13に記載の装置。
- 前記基板支持平盤の前記第2の面を冷却する為の冷却手段を更に備える、請求項13に記載の装置。
- 前記冷却手段が、前記基板支持平盤の前記第2の面に対し附勢された冷却プレートを備える、請求項17に記載の装置。
- 前記冷却手段が、
冷却プレートと、
前記基板支持平盤の第2の面と前記冷却プレートとの間の接触を保持するばねと、
を備える、請求項17に記載の装置。
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US08/073,029 US5511799A (en) | 1993-06-07 | 1993-06-07 | Sealing device useful in semiconductor processing apparatus for bridging materials having a thermal expansion differential |
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JP10263029A Ceased JPH11193868A (ja) | 1993-06-07 | 1998-09-17 | 半導体処理装置において熱膨張差を有する材料間の結合に有用なシーリングデバイス及び方法 |
JP2006190468A Expired - Lifetime JP4711901B2 (ja) | 1993-06-07 | 2006-07-11 | 半導体処理装置において熱膨張差を有する材料間の結合に有用なシーリングデバイス及び方法 |
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- 1994-06-06 ES ES94108636T patent/ES2102727T3/es not_active Expired - Lifetime
- 1994-06-06 EP EP96109032A patent/EP0734057A3/en not_active Withdrawn
- 1994-06-06 DE DE69402467T patent/DE69402467T2/de not_active Expired - Fee Related
- 1994-06-06 EP EP96112332A patent/EP0746010A3/en not_active Ceased
- 1994-06-07 JP JP6125159A patent/JP2945834B2/ja not_active Expired - Fee Related
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- 1995-05-05 US US08/436,057 patent/US5507499A/en not_active Expired - Fee Related
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Also Published As
Publication number | Publication date |
---|---|
JP2945834B2 (ja) | 1999-09-06 |
US5511799A (en) | 1996-04-30 |
JP2007036222A (ja) | 2007-02-08 |
EP0628989A2 (en) | 1994-12-14 |
KR950001872A (ko) | 1995-01-04 |
EP0734057A2 (en) | 1996-09-25 |
EP0746010A3 (en) | 1997-05-07 |
EP0628989B1 (en) | 1997-04-09 |
DE69402467D1 (de) | 1997-05-15 |
US5673167A (en) | 1997-09-30 |
EP0628989A3 (ja) | 1994-12-28 |
US5735339A (en) | 1998-04-07 |
US5507499A (en) | 1996-04-16 |
EP0746010A2 (en) | 1996-12-04 |
US6509069B1 (en) | 2003-01-21 |
ES2102727T3 (es) | 1997-08-01 |
JPH0774070A (ja) | 1995-03-17 |
EP0734057A3 (en) | 1996-11-20 |
US20010040029A1 (en) | 2001-11-15 |
JPH11193868A (ja) | 1999-07-21 |
DE69402467T2 (de) | 1997-12-04 |
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