JP4703815B2 - Ｍｏｓ型センサの駆動方法、及び撮像方法 - Google Patents

Ｍｏｓ型センサの駆動方法、及び撮像方法 Download PDF

Info

Publication number
JP4703815B2
JP4703815B2 JP2000156111A JP2000156111A JP4703815B2 JP 4703815 B2 JP4703815 B2 JP 4703815B2 JP 2000156111 A JP2000156111 A JP 2000156111A JP 2000156111 A JP2000156111 A JP 2000156111A JP 4703815 B2 JP4703815 B2 JP 4703815B2
Authority
JP
Japan
Prior art keywords
signal
pixels
reset
imaging unit
time
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2000156111A
Other languages
English (en)
Japanese (ja)
Other versions
JP2001339640A5 (enExample
JP2001339640A (ja
Inventor
肇 木村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2000156111A priority Critical patent/JP4703815B2/ja
Priority to US09/864,280 priority patent/US7224391B2/en
Publication of JP2001339640A publication Critical patent/JP2001339640A/ja
Priority to US11/802,634 priority patent/US7787039B2/en
Publication of JP2001339640A5 publication Critical patent/JP2001339640A5/ja
Priority to US12/869,872 priority patent/US8164652B2/en
Application granted granted Critical
Publication of JP4703815B2 publication Critical patent/JP4703815B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/57—Control of the dynamic range
    • H04N25/58—Control of the dynamic range involving two or more exposures
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N2101/00—Still video cameras
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/30—Cameras or camera modules comprising electronic image sensors; Control thereof for generating image signals from X-rays

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Thin Film Transistor (AREA)
JP2000156111A 2000-05-26 2000-05-26 Ｍｏｓ型センサの駆動方法、及び撮像方法 Expired - Fee Related JP4703815B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2000156111A JP4703815B2 (ja) 2000-05-26 2000-05-26 Ｍｏｓ型センサの駆動方法、及び撮像方法
US09/864,280 US7224391B2 (en) 2000-05-26 2001-05-25 MOS sensor and drive method thereof
US11/802,634 US7787039B2 (en) 2000-05-26 2007-05-24 MOS sensor and drive method thereof
US12/869,872 US8164652B2 (en) 2000-05-26 2010-08-27 MOS sensor and drive method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000156111A JP4703815B2 (ja) 2000-05-26 2000-05-26 Ｍｏｓ型センサの駆動方法、及び撮像方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2010052753A Division JP4943525B2 (ja) 2010-03-10 2010-03-10 Ｍｏｓ型センサ、モジュール及び電子機器

Publications (3)

Publication Number Publication Date
JP2001339640A JP2001339640A (ja) 2001-12-07
JP2001339640A5 JP2001339640A5 (enExample) 2007-07-12
JP4703815B2 true JP4703815B2 (ja) 2011-06-15

Family

ID=18660943

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000156111A Expired - Fee Related JP4703815B2 (ja) 2000-05-26 2000-05-26 Ｍｏｓ型センサの駆動方法、及び撮像方法

Country Status (2)

Country Link
US (3) US7224391B2 (enExample)
JP (1) JP4703815B2 (enExample)

Families Citing this family (127)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4703815B2 (ja) * 2000-05-26 2011-06-15 株式会社半導体エネルギー研究所 Ｍｏｓ型センサの駆動方法、及び撮像方法
JP4485087B2 (ja) * 2001-03-01 2010-06-16 株式会社半導体エネルギー研究所 半導体装置の動作方法
JP4703883B2 (ja) 2001-04-09 2011-06-15 株式会社半導体エネルギー研究所 半導体装置の作製方法
US7351605B2 (en) 2001-04-09 2008-04-01 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
US20030191693A1 (en) 2002-04-08 2003-10-09 Itamar Aphek System and method for conducting an advertising business
CA2351025A1 (en) * 2001-06-19 2002-12-19 Symagery Microsystems Inc. Method and apparatus for controlling power consumption in an active pixel sensor array
JP2003032453A (ja) * 2001-07-12 2003-01-31 Canon Inc 画像処理装置
US7205988B2 (en) * 2002-07-12 2007-04-17 Toshiba Matsushita Display Technology Co., Ltd. Display device
US7265740B2 (en) * 2002-08-30 2007-09-04 Toshiba Matsushita Display Technology Co., Ltd. Suppression of leakage current in image acquisition
JP2004110438A (ja) * 2002-09-18 2004-04-08 Nec Corp 画像処理装置、画像処理方法及びプログラム
EP1593159B1 (en) * 2003-02-14 2013-05-29 Canon Kabushiki Kaisha Radiation image pickup device
JP4120453B2 (ja) 2003-04-18 2008-07-16 ソニー株式会社 固体撮像装置とその駆動制御方法
US7253391B2 (en) 2003-09-19 2007-08-07 Semiconductor Energy Laboratory Co., Ltd. Optical sensor device and electronic apparatus
CA2443206A1 (en) 2003-09-23 2005-03-23 Ignis Innovation Inc. Amoled display backplanes - pixel driver circuits, array architecture, and external compensation
CN100477240C (zh) * 2003-10-06 2009-04-08 株式会社半导体能源研究所 半导体器件以及制造该器件的方法
US7440009B2 (en) * 2004-02-13 2008-10-21 Matsushita Electric Industrial Co., Ltd. High definition imaging method and imaging apparatus having electro-optical polarization element between two birefrigent elements forming alternately on sensor single and overlapping images
US7612818B2 (en) 2004-03-29 2009-11-03 Toshiba Matsushita Display Technology Co., Ltd. Input sensor containing display device and method for driving the same
WO2005109037A1 (ja) * 2004-05-11 2005-11-17 Hamamatsu Photonics K.K. 放射線撮像装置
CA2472671A1 (en) 2004-06-29 2005-12-29 Ignis Innovation Inc. Voltage-programming scheme for current-driven amoled displays
JP4817636B2 (ja) 2004-10-04 2011-11-16 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
KR20060062164A (ko) * 2004-12-03 2006-06-12 삼성전자주식회사 광센서를 내장하는 표시 장치
CA2490858A1 (en) 2004-12-07 2006-06-07 Ignis Innovation Inc. Driving method for compensated voltage-programming of amoled displays
US9275579B2 (en) 2004-12-15 2016-03-01 Ignis Innovation Inc. System and methods for extraction of threshold and mobility parameters in AMOLED displays
US9280933B2 (en) 2004-12-15 2016-03-08 Ignis Innovation Inc. System and methods for extraction of threshold and mobility parameters in AMOLED displays
US10013907B2 (en) 2004-12-15 2018-07-03 Ignis Innovation Inc. Method and system for programming, calibrating and/or compensating, and driving an LED display
US20140111567A1 (en) 2005-04-12 2014-04-24 Ignis Innovation Inc. System and method for compensation of non-uniformities in light emitting device displays
US8599191B2 (en) 2011-05-20 2013-12-03 Ignis Innovation Inc. System and methods for extraction of threshold and mobility parameters in AMOLED displays
US8576217B2 (en) 2011-05-20 2013-11-05 Ignis Innovation Inc. System and methods for extraction of threshold and mobility parameters in AMOLED displays
US10012678B2 (en) 2004-12-15 2018-07-03 Ignis Innovation Inc. Method and system for programming, calibrating and/or compensating, and driving an LED display
US9171500B2 (en) 2011-05-20 2015-10-27 Ignis Innovation Inc. System and methods for extraction of parasitic parameters in AMOLED displays
WO2006063448A1 (en) 2004-12-15 2006-06-22 Ignis Innovation Inc. Method and system for programming, calibrating and driving a light emitting device display
US9799246B2 (en) 2011-05-20 2017-10-24 Ignis Innovation Inc. System and methods for extraction of threshold and mobility parameters in AMOLED displays
JP5254530B2 (ja) * 2005-01-26 2013-08-07 株式会社ジャパンディスプレイセントラル 平面表示装置
JP4425809B2 (ja) * 2005-02-03 2010-03-03 富士通マイクロエレクトロニクス株式会社 撮像装置
CA2496642A1 (en) 2005-02-10 2006-08-10 Ignis Innovation Inc. Fast settling time driving method for organic light-emitting diode (oled) displays based on current programming
US20090066825A1 (en) * 2005-02-28 2009-03-12 Matsushita Electric Industrial Co., Ltd. Solid-state imaging device and its driving method
JP5355080B2 (ja) 2005-06-08 2013-11-27 イグニス・イノベイション・インコーポレーテッド 発光デバイス・ディスプレイを駆動するための方法およびシステム
GB0517741D0 (en) * 2005-08-31 2005-10-12 E2V Tech Uk Ltd Image sensor
CA2518276A1 (en) 2005-09-13 2007-03-13 Ignis Innovation Inc. Compensation technique for luminance degradation in electro-luminance devices
US9489891B2 (en) 2006-01-09 2016-11-08 Ignis Innovation Inc. Method and system for driving an active matrix display circuit
US9269322B2 (en) 2006-01-09 2016-02-23 Ignis Innovation Inc. Method and system for driving an active matrix display circuit
JP5164857B2 (ja) 2006-01-09 2013-03-21 イグニス・イノベイション・インコーポレーテッド アクティブマトリクスディスプレイ回路の駆動方法および表示システム
US8477121B2 (en) 2006-04-19 2013-07-02 Ignis Innovation, Inc. Stable driving scheme for active matrix displays
JP4891666B2 (ja) * 2006-06-22 2012-03-07 東芝モバイルディスプレイ株式会社 液晶表示装置
CA2556961A1 (en) 2006-08-15 2008-02-15 Ignis Innovation Inc. Oled compensation technique based on oled capacitance
DE102006052059A1 (de) * 2006-11-04 2008-05-08 Leopold Kostal Gmbh & Co. Kg Verfahren zum Betreiben eines photoelektrischen Sensorarrays
US7924273B2 (en) 2006-11-06 2011-04-12 Toshiba Matsushita Display Technology Co., Ltd. Display apparatus with optical input function
JP4793281B2 (ja) 2007-02-21 2011-10-12 ソニー株式会社 撮像装置および表示装置
JP4882825B2 (ja) * 2007-03-28 2012-02-22 セイコーエプソン株式会社 検出装置、その駆動方法、および電子機器
WO2008126873A1 (ja) * 2007-04-09 2008-10-23 Sharp Kabushiki Kaisha 表示装置
EP1986238A3 (en) * 2007-04-27 2010-12-29 Semiconductor Energy Laboratory Co., Ltd. Resin molded optical semiconductor device and corresponding fabrication method
JP4659845B2 (ja) * 2008-02-08 2011-03-30 シャープ株式会社 原稿読取装置及び画像形成装置
US8614652B2 (en) 2008-04-18 2013-12-24 Ignis Innovation Inc. System and driving method for light emitting device display
GB0807619D0 (en) * 2008-04-28 2008-06-04 Whitton Peter A Production of bio fuels from plant tissue culture sources
US8736587B2 (en) 2008-07-10 2014-05-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
CA2637343A1 (en) 2008-07-29 2010-01-29 Ignis Innovation Inc. Improving the display source driver
JP5415749B2 (ja) * 2008-11-26 2014-02-12 京セラ株式会社 携帯電子機器
TWI585955B (zh) 2008-11-28 2017-06-01 半導體能源研究所股份有限公司 光感測器及顯示裝置
US9370075B2 (en) 2008-12-09 2016-06-14 Ignis Innovation Inc. System and method for fast compensation programming of pixels in a display
US8385868B2 (en) 2009-06-15 2013-02-26 Agc Automotive Americas R&D, Inc. Diversity antenna system and method utilizing a threshold value
CA2669367A1 (en) 2009-06-16 2010-12-16 Ignis Innovation Inc Compensation technique for color shift in displays
CA2688870A1 (en) 2009-11-30 2011-05-30 Ignis Innovation Inc. Methode and techniques for improving display uniformity
US9384698B2 (en) 2009-11-30 2016-07-05 Ignis Innovation Inc. System and methods for aging compensation in AMOLED displays
US9311859B2 (en) 2009-11-30 2016-04-12 Ignis Innovation Inc. Resetting cycle for aging compensation in AMOLED displays
US10319307B2 (en) 2009-06-16 2019-06-11 Ignis Innovation Inc. Display system with compensation techniques and/or shared level resources
JP5489570B2 (ja) * 2009-07-27 2014-05-14 キヤノン株式会社 光電変換装置及び撮像システム
US8624875B2 (en) * 2009-08-24 2014-01-07 Semiconductor Energy Laboratory Co., Ltd. Method for driving touch panel
JP5740132B2 (ja) 2009-10-26 2015-06-24 株式会社半導体エネルギー研究所 表示装置及び半導体装置
EP2497011A4 (en) * 2009-11-06 2013-10-02 Semiconductor Energy Lab TOUCH PANEL AND METHOD FOR CONTROLLING TOUCH PANEL
US8283967B2 (en) 2009-11-12 2012-10-09 Ignis Innovation Inc. Stable current source for system integration to display substrate
JP2011123876A (ja) * 2009-11-12 2011-06-23 Semiconductor Energy Lab Co Ltd 半導体装置
US10996258B2 (en) 2009-11-30 2021-05-04 Ignis Innovation Inc. Defect detection and correction of pixel circuits for AMOLED displays
US8803417B2 (en) 2009-12-01 2014-08-12 Ignis Innovation Inc. High resolution pixel architecture
CA2687631A1 (en) 2009-12-06 2011-06-06 Ignis Innovation Inc Low power driving scheme for display applications
US10176736B2 (en) 2010-02-04 2019-01-08 Ignis Innovation Inc. System and methods for extracting correlation curves for an organic light emitting device
US9881532B2 (en) 2010-02-04 2018-01-30 Ignis Innovation Inc. System and method for extracting correlation curves for an organic light emitting device
US10089921B2 (en) 2010-02-04 2018-10-02 Ignis Innovation Inc. System and methods for extracting correlation curves for an organic light emitting device
CA2692097A1 (en) 2010-02-04 2011-08-04 Ignis Innovation Inc. Extracting correlation curves for light emitting device
US20140313111A1 (en) 2010-02-04 2014-10-23 Ignis Innovation Inc. System and methods for extracting correlation curves for an organic light emitting device
US10163401B2 (en) 2010-02-04 2018-12-25 Ignis Innovation Inc. System and methods for extracting correlation curves for an organic light emitting device
CA2696778A1 (en) * 2010-03-17 2011-09-17 Ignis Innovation Inc. Lifetime, uniformity, parameter extraction methods
KR101082234B1 (ko) * 2010-05-13 2011-11-09 삼성모바일디스플레이주식회사 유기전계발광 표시장치 및 그의 구동방법
JP5763474B2 (ja) * 2010-08-27 2015-08-12 株式会社半導体エネルギー研究所 光センサ
US9209209B2 (en) 2010-10-29 2015-12-08 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and method for operating the same
US8907991B2 (en) 2010-12-02 2014-12-09 Ignis Innovation Inc. System and methods for thermal compensation in AMOLED displays
US9886899B2 (en) 2011-05-17 2018-02-06 Ignis Innovation Inc. Pixel Circuits for AMOLED displays
US9351368B2 (en) 2013-03-08 2016-05-24 Ignis Innovation Inc. Pixel circuits for AMOLED displays
US20140368491A1 (en) 2013-03-08 2014-12-18 Ignis Innovation Inc. Pixel circuits for amoled displays
US9530349B2 (en) 2011-05-20 2016-12-27 Ignis Innovations Inc. Charged-based compensation and parameter extraction in AMOLED displays
US9466240B2 (en) 2011-05-26 2016-10-11 Ignis Innovation Inc. Adaptive feedback system for compensating for aging pixel areas with enhanced estimation speed
EP3547301A1 (en) 2011-05-27 2019-10-02 Ignis Innovation Inc. Systems and methods for aging compensation in amoled displays
CN103597534B (zh) 2011-05-28 2017-02-15 伊格尼斯创新公司 用于快速补偿显示器中的像素的编程的系统和方法
US9324268B2 (en) 2013-03-15 2016-04-26 Ignis Innovation Inc. Amoled displays with multiple readout circuits
US10089924B2 (en) 2011-11-29 2018-10-02 Ignis Innovation Inc. Structural and low-frequency non-uniformity compensation
US8937632B2 (en) 2012-02-03 2015-01-20 Ignis Innovation Inc. Driving system for active-matrix displays
US9747834B2 (en) 2012-05-11 2017-08-29 Ignis Innovation Inc. Pixel circuits including feedback capacitors and reset capacitors, and display systems therefore
US8922544B2 (en) 2012-05-23 2014-12-30 Ignis Innovation Inc. Display systems with compensation for line propagation delay
US9336717B2 (en) 2012-12-11 2016-05-10 Ignis Innovation Inc. Pixel circuits for AMOLED displays
US9786223B2 (en) 2012-12-11 2017-10-10 Ignis Innovation Inc. Pixel circuits for AMOLED displays
US9830857B2 (en) 2013-01-14 2017-11-28 Ignis Innovation Inc. Cleaning common unwanted signals from pixel measurements in emissive displays
CN108665836B (zh) 2013-01-14 2021-09-03 伊格尼斯创新公司 补偿测量的器件电流相对于参考电流的偏差的方法和系统
CA2894717A1 (en) 2015-06-19 2016-12-19 Ignis Innovation Inc. Optoelectronic device characterization in array with shared sense line
US9721505B2 (en) 2013-03-08 2017-08-01 Ignis Innovation Inc. Pixel circuits for AMOLED displays
EP2779147B1 (en) 2013-03-14 2016-03-02 Ignis Innovation Inc. Re-interpolation with edge detection for extracting an aging pattern for AMOLED displays
DE112014002086T5 (de) 2013-04-22 2016-01-14 Ignis Innovation Inc. Prüfsystem für OLED-Anzeigebildschirme
CN107452314B (zh) 2013-08-12 2021-08-24 伊格尼斯创新公司 用于要被显示器显示的图像的补偿图像数据的方法和装置
US9761170B2 (en) 2013-12-06 2017-09-12 Ignis Innovation Inc. Correction for localized phenomena in an image array
US9741282B2 (en) 2013-12-06 2017-08-22 Ignis Innovation Inc. OLED display system and method
US9502653B2 (en) 2013-12-25 2016-11-22 Ignis Innovation Inc. Electrode contacts
TWI556644B (zh) * 2014-01-10 2016-11-01 恆景科技股份有限公司 像素電路和影像感測器
US10192479B2 (en) 2014-04-08 2019-01-29 Ignis Innovation Inc. Display system using system level resources to calculate compensation parameters for a display module in a portable device
CA2873476A1 (en) 2014-12-08 2016-06-08 Ignis Innovation Inc. Smart-pixel display architecture
CA2879462A1 (en) 2015-01-23 2016-07-23 Ignis Innovation Inc. Compensation for color variation in emissive devices
CA2886862A1 (en) 2015-04-01 2016-10-01 Ignis Innovation Inc. Adjusting display brightness for avoiding overheating and/or accelerated aging
CA2889870A1 (en) 2015-05-04 2016-11-04 Ignis Innovation Inc. Optical feedback system
CA2892714A1 (en) 2015-05-27 2016-11-27 Ignis Innovation Inc Memory bandwidth reduction in compensation system
US10373554B2 (en) 2015-07-24 2019-08-06 Ignis Innovation Inc. Pixels and reference circuits and timing techniques
US10657895B2 (en) 2015-07-24 2020-05-19 Ignis Innovation Inc. Pixels and reference circuits and timing techniques
CA2898282A1 (en) 2015-07-24 2017-01-24 Ignis Innovation Inc. Hybrid calibration of current sources for current biased voltage progra mmed (cbvp) displays
CA2900170A1 (en) 2015-08-07 2017-02-07 Gholamreza Chaji Calibration of pixel based on improved reference values
CA2908285A1 (en) 2015-10-14 2017-04-14 Ignis Innovation Inc. Driver with multiple color pixel structure
JP6679897B2 (ja) * 2015-11-20 2020-04-15 富士通株式会社 情報処理装置、生体認証方法および生体認証プログラム
CN106682640B (zh) * 2017-01-04 2019-04-05 京东方科技集团股份有限公司 指纹识别电路及其驱动方法、显示装置
CN107104108B (zh) * 2017-05-19 2020-08-21 京东方科技集团股份有限公司 一种阵列基板及其制作方法、平板探测器及影像设备
US10346665B2 (en) * 2017-05-30 2019-07-09 Sunasic Technologies Limited Noise reduced capacitive image sensor and method operating the same
JP7019471B2 (ja) * 2018-03-19 2022-02-15 キヤノン株式会社 固体撮像装置及び撮像システム
CN111404533B (zh) * 2019-01-02 2022-06-03 京东方科技集团股份有限公司 检测电路、纹路识别装置及驱动方法

Family Cites Families (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61265534A (ja) * 1985-05-20 1986-11-25 Fuji Photo Film Co Ltd 蓄積型イメ−ジセンサ−
JPS6216684A (ja) * 1985-07-16 1987-01-24 Olympus Optical Co Ltd 測光機能を有する固体撮像装置
JPS63161780A (ja) 1986-12-25 1988-07-05 Hamamatsu Photonics Kk 固体撮像素子
US4839735A (en) 1986-12-22 1989-06-13 Hamamatsu Photonics K.K. Solid state image sensor having variable charge accumulation time period
JPH03106184A (ja) * 1989-09-20 1991-05-02 Olympus Optical Co Ltd 固体撮像装置
JPH0451785A (ja) * 1990-06-20 1992-02-20 Olympus Optical Co Ltd 固体撮像装置
JP2927970B2 (ja) * 1990-12-06 1999-07-28 キヤノン株式会社 撮像装置
JP2998410B2 (ja) * 1991-10-18 2000-01-11 富士ゼロックス株式会社 ２次元密着型イメージセンサ及びその駆動方法
JP3359063B2 (ja) 1992-09-28 2002-12-24 キヤノン株式会社 固体撮像素子
US5872596A (en) 1992-09-28 1999-02-16 Canon Kabushiki Kaisha Device for widening the dynamic range of solid-state image pickup elements
JP3053721B2 (ja) 1993-08-06 2000-06-19 キヤノン株式会社 固体撮像装置
JP3441761B2 (ja) 1993-05-28 2003-09-02 キヤノン株式会社 イメージセンサ
EP0627847B1 (en) 1993-05-28 2001-04-11 Canon Kabushiki Kaisha Photoelectric conversion device
DE69434241T2 (de) 1993-05-28 2005-12-29 Canon K.K. Leseverfahren für Festkörper-Bildsensor
US5452004A (en) * 1993-06-17 1995-09-19 Litton Systems, Inc. Focal plane array imaging device with random access architecture
JP2953297B2 (ja) * 1994-03-30 1999-09-27 日本電気株式会社 受光素子およびその駆動方法
GB2308267B (en) * 1995-08-25 2000-06-28 Psc Inc Optical reader with imaging array having reduced pattern density
JP3473658B2 (ja) * 1996-07-18 2003-12-08 アルプス電気株式会社 指紋読取り装置
US6515702B1 (en) * 1997-07-14 2003-02-04 California Institute Of Technology Active pixel image sensor with a winner-take-all mode of operation
US6243134B1 (en) * 1998-02-27 2001-06-05 Intel Corporation Method to reduce reset noise in photodiode based CMOS image sensors
JP4109743B2 (ja) * 1998-03-19 2008-07-02 株式会社東芝 固体撮像装置
US6307956B1 (en) * 1998-04-07 2001-10-23 Gerald R. Black Writing implement for identity verification system
US6040570A (en) * 1998-05-29 2000-03-21 Sarnoff Corporation Extended dynamic range image sensor system
KR100280488B1 (ko) * 1998-06-09 2001-02-01 김영환 전자셔터 기능을 가지는 액티브 픽셀 센서 방식의 픽셀 구조
US6665010B1 (en) * 1998-07-21 2003-12-16 Intel Corporation Controlling integration times of pixel sensors
JP2000078484A (ja) * 1998-08-28 2000-03-14 Olympus Optical Co Ltd 画像入力装置
JP3275846B2 (ja) 1998-08-31 2002-04-22 日本電気株式会社 情報表示装置および情報表示プログラムを記録した記録媒体
JP2000078483A (ja) 1998-09-03 2000-03-14 Canon Inc 固体撮像装置と自動露光装置
JP3722352B2 (ja) 1999-04-09 2005-11-30 カシオ計算機株式会社 フォトセンサシステム及びそのフォトセンサシステムにおけるフォトセンサの駆動制御方法
CN1224240C (zh) 1999-04-09 2005-10-19 卡西欧计算机株式会社 用于光敏元件系统的驱动控制法
JP4076109B2 (ja) * 1999-06-08 2008-04-16 富士フイルム株式会社 固体撮像装置の制御方法
US7158183B1 (en) * 1999-09-03 2007-01-02 Nikon Corporation Digital camera
JP4281199B2 (ja) * 2000-02-18 2009-06-17 株式会社ニコン 電子カメラ
JP3922509B2 (ja) * 2000-01-25 2007-05-30 カシオ計算機株式会社 フォトセンサシステム及びその感度設定方法
US6867811B2 (en) * 1999-11-08 2005-03-15 Casio Computer Co., Ltd. Photosensor system and drive control method thereof
JP4081641B2 (ja) 2001-06-29 2008-04-30 カシオ計算機株式会社 ２次元画像読取装置の感度調整装置及びその感度調整方法
ATE512547T1 (de) * 1999-11-08 2011-06-15 Casio Computer Co Ltd Ansteuerungsverfahren für photosensorsystem
US6510202B2 (en) * 2000-03-31 2003-01-21 Canon Kabushiki Kaisha Imaging apparatus, imaging method, and storage medium
JP4703815B2 (ja) * 2000-05-26 2011-06-15 株式会社半導体エネルギー研究所 Ｍｏｓ型センサの駆動方法、及び撮像方法

Also Published As

Publication number Publication date
US7787039B2 (en) 2010-08-31
US20070268389A1 (en) 2007-11-22
US8164652B2 (en) 2012-04-24
US7224391B2 (en) 2007-05-29
US20020012057A1 (en) 2002-01-31
US20100321548A1 (en) 2010-12-23
JP2001339640A (ja) 2001-12-07

Similar Documents

Publication Publication Date Title
JP4703815B2 (ja) Ｍｏｓ型センサの駆動方法、及び撮像方法
KR100794287B1 (ko) 반도체장치 및 그의 구동방법
JP4197217B2 (ja) 装置
JP2001308306A (ja) 半導体装置およびその駆動方法
JP4954404B2 (ja) 表示装置
US20060081957A1 (en) Solid-state imaging device
JP4943525B2 (ja) Ｍｏｓ型センサ、モジュール及び電子機器
JP2015056702A (ja) 撮像装置、撮像装置の駆動方法、および、カメラ
JP5581436B2 (ja) Ｘ線カメラ
JP5470475B2 (ja) 半導体装置及び電子機器
JP5205430B2 (ja) 半導体装置
JP5619122B2 (ja) 半導体装置、ｘ線カメラ及び電子機器
JP2010200328A (ja) 半導体装置及び半導体装置の作製方法
JP5326022B2 (ja) 半導体装置、及び電子機器
JP2010068545A (ja) 半導体装置の駆動方法
JP2012054952A (ja) 半導体装置及び半導体装置の駆動方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20070525

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20070525

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20091102

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20100119

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20100310

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20100406

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20101130

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20110202

A911 Transfer to examiner for re-examination before appeal (zenchi)

Free format text: JAPANESE INTERMEDIATE CODE: A911

Effective date: 20110210

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20110301

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20110309

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20140318

Year of fee payment: 3

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees