JP4685023B2 - 高純度ＺｒＢ２粉末及びその製造方法 - Google Patents

高純度ＺｒＢ２粉末及びその製造方法 Download PDF

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Publication number
JP4685023B2
JP4685023B2 JP2006539192A JP2006539192A JP4685023B2 JP 4685023 B2 JP4685023 B2 JP 4685023B2 JP 2006539192 A JP2006539192 A JP 2006539192A JP 2006539192 A JP2006539192 A JP 2006539192A JP 4685023 B2 JP4685023 B2 JP 4685023B2
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JP
Japan
Prior art keywords
powder
purity
zrb
zro
single crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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JP2006539192A
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English (en)
Japanese (ja)
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JPWO2006038406A1 (ja
Inventor
裕一朗 新藤
幸一 竹本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
JX Nippon Mining and Metals Corp
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JX Nippon Mining and Metals Corp
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Publication date
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Priority to JP2006539192A priority Critical patent/JP4685023B2/ja
Publication of JPWO2006038406A1 publication Critical patent/JPWO2006038406A1/ja
Application granted granted Critical
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Expired - Fee Related legal-status Critical Current
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Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B35/00—Boron; Compounds thereof
    • C01B35/02—Boron; Borides
    • C01B35/04—Metal borides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/16—Heating of the molten zone
    • C30B13/20—Heating of the molten zone by induction, e.g. hot wire technique
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12014—All metal or with adjacent metals having metal particles
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12535—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.] with additional, spatially distinct nonmetal component
    • Y10T428/12576—Boride, carbide or nitride component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/29—Coated or structually defined flake, particle, cell, strand, strand portion, rod, filament, macroscopic fiber or mass thereof
    • Y10T428/2982—Particulate matter [e.g., sphere, flake, etc.]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP2006539192A 2004-10-07 2005-09-05 高純度ＺｒＢ２粉末及びその製造方法 Expired - Fee Related JP4685023B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2006539192A JP4685023B2 (ja) 2004-10-07 2005-09-05 高純度ＺｒＢ２粉末及びその製造方法

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2004294873 2004-10-07
JP2004294873 2004-10-07
JP2006539192A JP4685023B2 (ja) 2004-10-07 2005-09-05 高純度ＺｒＢ２粉末及びその製造方法
PCT/JP2005/016214 WO2006038406A1 (ja) 2004-10-07 2005-09-05 高純度ＺｒＢ２粉末及びその製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2011000037A Division JP2011088819A (ja) 2004-10-07 2011-01-04 高純度ＺｒＢ２粉末及びその製造方法

Publications (2)

Publication Number Publication Date
JPWO2006038406A1 JPWO2006038406A1 (ja) 2008-05-15
JP4685023B2 true JP4685023B2 (ja) 2011-05-18

Family

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Family Applications (3)

Application Number Title Priority Date Filing Date
JP2006539192A Expired - Fee Related JP4685023B2 (ja) 2004-10-07 2005-09-05 高純度ＺｒＢ２粉末及びその製造方法
JP2011000037A Pending JP2011088819A (ja) 2004-10-07 2011-01-04 高純度ＺｒＢ２粉末及びその製造方法
JP2013132633A Pending JP2013216574A (ja) 2004-10-07 2013-06-25 高純度ＺｒＢ２粉末

Family Applications After (2)

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JP2011000037A Pending JP2011088819A (ja) 2004-10-07 2011-01-04 高純度ＺｒＢ２粉末及びその製造方法
JP2013132633A Pending JP2013216574A (ja) 2004-10-07 2013-06-25 高純度ＺｒＢ２粉末

Country Status (4)

Country Link
US (1) US8585995B2 (zh)
JP (3) JP4685023B2 (zh)
TW (1) TWI265159B (zh)
WO (1) WO2006038406A1 (zh)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011063486A (ja) * 2009-09-18 2011-03-31 Sumitomo Osaka Cement Co Ltd 高純度金属ホウ化物粒子の製造方法及びその方法により得られた高純度金属ホウ化物粒子
JP5780540B2 (ja) * 2010-12-24 2015-09-16 国立研究開発法人物質・材料研究機構 二ホウ化ジルコニウム粉末及びその合成方法
CN102050628A (zh) * 2011-01-04 2011-05-11 上海大学 一种制备超细二硼化锆粉体的方法
CN102417188B (zh) * 2011-08-30 2013-10-16 中国科学院上海硅酸盐研究所 一种低氧含量亚微米级过渡金属硼化物粉体的制备方法
CN105084901A (zh) * 2015-06-29 2015-11-25 中国矿业大学 一种制备硼化锆(ZrB2)陶瓷先驱体的新方法
CN105197954B (zh) * 2015-09-29 2018-03-30 山东理工大学 棒状硼化锆粉体的合成方法
CN105645422B (zh) * 2016-01-06 2018-06-15 昆明理工大学 一种液相法制备球形超细硼化锆粉体的工艺
CN108585889B (zh) * 2018-04-28 2021-04-16 武汉科技大学 一种棒状硼化锆-片状碳化硅单晶复合粉体及其制备方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63282165A (ja) * 1987-05-11 1988-11-18 Matsushita Electric Ind Co Ltd 酸化ジルコニウムとホウ化物を含む混合粉末及びそれらを含む複合焼結体の製造方法
JPS63297273A (ja) * 1987-05-29 1988-12-05 Ube Ind Ltd ＺｒＢ↓２焼結体の製造方法
JPH07277734A (ja) * 1994-04-08 1995-10-24 Tosoh Corp ホウ化ジルコニウム系多孔体
JP2004203666A (ja) * 2002-12-25 2004-07-22 Kyocera Corp ＺｒＢ２単結晶及びその製造方法並びに半導体薄膜用基板
JP2005145787A (ja) * 2003-11-18 2005-06-09 Kyocera Corp 半導体育成用基板および半導体装置

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4414180A (en) * 1981-10-13 1983-11-08 Fisher Robert P Method for generating chlorine dioxide gas
EP0170864B1 (en) * 1984-07-10 1989-08-23 Asahi Glass Company Ltd. Zrb2 composite sintered material
JPS627673A (ja) * 1985-06-19 1987-01-14 旭硝子株式会社 ＺｒＢ↓２系焼結体
JPS6395113A (ja) * 1986-10-13 1988-04-26 Kawasaki Steel Corp 金属硼化物を主成分とする微粉末の製造方法
US4952532A (en) * 1987-10-06 1990-08-28 Denki Kagaku Kogyo Kabushiki Kaisha Sintered body having high corrosion resistance and containing ZRB2
JPH02239156A (ja) * 1989-03-13 1990-09-21 Central Glass Co Ltd 二ホウ化金属系焼結体およびその製造方法
JPH0585830A (ja) * 1991-09-26 1993-04-06 Showa Denko Kk 硼化ジルコニウム系焼結体及びその製造法
JPH05116961A (ja) * 1991-10-24 1993-05-14 Olympus Optical Co Ltd 光学素子成形用型
US5688731A (en) * 1996-11-13 1997-11-18 Eastman Kodak Company Ceramic articles containing doped zirconia having high electrical conductivity
DE60130477T2 (de) * 2000-10-02 2008-01-03 Nippon Mining & Metals Co., Ltd. Hochreines Zirkonium oder Hafnium, diese beinhaltendes Sputtering Target und mit diesesm hergestellte dünnen Filme, Verfahren zur Herstellung von hochreinem Zirkonium oder Hafnium und Herstellungsverfahren für Pulver aus hochreinem Zirkonium oder Hafnium
NO20010929D0 (no) * 2001-02-23 2001-02-23 Norsk Hydro As FremgangsmÕte for utøvelse av termiske reaksjoner mellom reaktanter samt en ovn for samme
JP4060803B2 (ja) * 2002-03-28 2008-03-12 カウンシル・オブ・サイエンティフィック・アンド・インダストリアル・リサーチ ホウ化ジルコニウム粉末の製造方法
JP4140324B2 (ja) * 2002-09-10 2008-08-27 住友金属鉱山株式会社 金属ホウ化物粉末及びその製造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63282165A (ja) * 1987-05-11 1988-11-18 Matsushita Electric Ind Co Ltd 酸化ジルコニウムとホウ化物を含む混合粉末及びそれらを含む複合焼結体の製造方法
JPS63297273A (ja) * 1987-05-29 1988-12-05 Ube Ind Ltd ＺｒＢ↓２焼結体の製造方法
JPH07277734A (ja) * 1994-04-08 1995-10-24 Tosoh Corp ホウ化ジルコニウム系多孔体
JP2004203666A (ja) * 2002-12-25 2004-07-22 Kyocera Corp ＺｒＢ２単結晶及びその製造方法並びに半導体薄膜用基板
JP2005145787A (ja) * 2003-11-18 2005-06-09 Kyocera Corp 半導体育成用基板および半導体装置

Also Published As

Publication number Publication date
JP2011088819A (ja) 2011-05-06
JPWO2006038406A1 (ja) 2008-05-15
US20080075648A1 (en) 2008-03-27
JP2013216574A (ja) 2013-10-24
TWI265159B (en) 2006-11-01
WO2006038406A1 (ja) 2006-04-13
TW200611885A (en) 2006-04-16
US8585995B2 (en) 2013-11-19

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