JP4675588B2 - 薄膜トランジスタ表示板及びその製造方法 - Google Patents
薄膜トランジスタ表示板及びその製造方法 Download PDFInfo
- Publication number
- JP4675588B2 JP4675588B2 JP2004196782A JP2004196782A JP4675588B2 JP 4675588 B2 JP4675588 B2 JP 4675588B2 JP 2004196782 A JP2004196782 A JP 2004196782A JP 2004196782 A JP2004196782 A JP 2004196782A JP 4675588 B2 JP4675588 B2 JP 4675588B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- semiconductor layer
- gate line
- conductive film
- transistor array
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 91
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 31
- 239000010408 film Substances 0.000 claims abstract description 377
- 239000004065 semiconductor Substances 0.000 claims abstract description 139
- 239000000758 substrate Substances 0.000 claims abstract description 28
- 125000006850 spacer group Chemical group 0.000 claims abstract description 27
- 238000001259 photo etching Methods 0.000 claims abstract description 18
- 238000000151 deposition Methods 0.000 claims abstract description 17
- 239000010410 layer Substances 0.000 claims description 117
- 230000001681 protective effect Effects 0.000 claims description 59
- 239000000463 material Substances 0.000 claims description 57
- 238000000034 method Methods 0.000 claims description 35
- 150000004767 nitrides Chemical class 0.000 claims description 22
- 238000005530 etching Methods 0.000 claims description 19
- 239000012535 impurity Substances 0.000 claims description 12
- 229910000583 Nd alloy Inorganic materials 0.000 claims description 5
- 230000002265 prevention Effects 0.000 claims description 2
- 239000011241 protective layer Substances 0.000 claims 3
- 238000000206 photolithography Methods 0.000 claims 2
- 238000002161 passivation Methods 0.000 abstract 2
- 239000004973 liquid crystal related substance Substances 0.000 description 31
- 239000004020 conductor Substances 0.000 description 20
- 229910021417 amorphous silicon Inorganic materials 0.000 description 14
- 239000003990 capacitor Substances 0.000 description 13
- 239000011651 chromium Substances 0.000 description 10
- 238000003860 storage Methods 0.000 description 10
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
- 229910004205 SiNX Inorganic materials 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 238000004528 spin coating Methods 0.000 description 3
- 206010034972 Photosensitivity reaction Diseases 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 239000011147 inorganic material Substances 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 238000003475 lamination Methods 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- MGRWKWACZDFZJT-UHFFFAOYSA-N molybdenum tungsten Chemical compound [Mo].[W] MGRWKWACZDFZJT-UHFFFAOYSA-N 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 230000036211 photosensitivity Effects 0.000 description 2
- 229910021332 silicide Inorganic materials 0.000 description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 2
- 239000013589 supplement Substances 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910001182 Mo alloy Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical class [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229920001940 conductive polymer Polymers 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 230000003449 preventive effect Effects 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 239000002023 wood Substances 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1345—Conductors connecting electrodes to cell terminals
- G02F1/13458—Terminal pads
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136231—Active matrix addressed cells for reducing the number of lithographic steps
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
- G02F1/13629—Multilayer wirings
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Nonlinear Science (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Optics & Photonics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Mathematical Physics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Description
81、82 接触補助部材
110 基板
121、129 ゲート線
124 ゲート電極
140 ゲート絶縁膜
151、154 半導体
161、163、165 抵抗性接触部材
171、179 データ線
173 ソース電極
175 ドレーン電極
180 保護膜
181、182、185 接触孔
189 開口部
190 画素電極
320 間隔材柱
321 第1間隔材柱
322 第2間隔材柱
Claims (23)
- 基板上にゲート線を形成する段階と、
前記ゲート線上にゲート絶縁膜と半導体層を連続積層する段階と、
前記半導体層上に下部導電膜と上部導電膜を蒸着する段階と、
前記上部導電膜、前記下部導電膜及び前記半導体層を写真エッチングする段階と、
保護膜を蒸着する段階と、
前記保護膜を写真エッチングして前記上部導電膜の第1部分と第2部分を露出させる段階と、
前記上部導電膜の第1部分と第2部分を除去して前記下部導電膜の第1部分と第2部分を露出させる段階と、
前記下部導電膜の第1部分を覆う画素電極を形成する段階と、
前記下部導電膜の第2部分を除去して前記半導体層の一部を露出する段階と、
前記半導体層の露出された部分の上に間隔材柱を形成する段階と、
を含む薄膜トランジスタ表示板の製造方法。 - 前記保護膜写真エッチング段階で、前記上部導電膜の第1部分と、これに隣接するゲート絶縁膜を共に露出する、請求項1に記載の薄膜トランジスタ表示板の製造方法。
- 前記画素電極を形成する段階で、前記下部導電膜の第1部分と、露出された前記ゲート絶縁膜を共に覆い画素電極を形成する、請求項1に記載の薄膜トランジスタ表示板の製造方法。
- 前記保護膜の写真エッチング段階で、前記上部導電膜の第3部分を露出させる、請求項3に記載の薄膜トランジスタ表示板の製造方法。
- 前記上部導電膜除去段階で、前記上部導電膜の第3部分を除去して前記下部導電膜の第3部分を露出させる、請求項4に記載の薄膜トランジスタ表示板の製造方法。
- 前記ゲート線は下部膜と上部膜を含む、請求項5に記載の薄膜トランジスタ表示板の製造方法。
- 前記保護膜の写真エッチング段階で、前記ゲート絶縁膜を共にエッチングして前記ゲート線の上部膜の一部を露出させる、請求項6に記載の薄膜トランジスタ表示板の製造方法。
- 前記上部導電膜の除去段階で、前記ゲート線の上部膜の露出された部分を共に除去して前記ゲート線の下部膜の一部を露出させる、請求項7に記載の薄膜トランジスタ表示板の製造方法。
- 前記下部導電膜の第3部分と前記ゲート線下部膜の露出された部分を覆う、接触補助部材を形成する段階をさらに含む、請求項8に記載の薄膜トランジスタ表示板の製造方法。
- 前記ゲート線の上部膜と前記上部導電膜は同一の物質で形成される、請求項9に記載の薄膜トランジスタ表示板の製造方法。
- 前記ゲート線の上部膜と前記上部導電膜はCrからなり、前記ゲート線の下部膜と前記下部導電膜はAlまたはAl-Nd合金からなる、請求項10に記載の薄膜トランジスタ表示板の製造方法。
- 前記半導体層は真性半導体膜と不純物半導体膜を含み、前記下部導電膜の除去後に、前記不純物半導体膜の露出された部分を除去する段階をさらに含む、請求項1〜11のいずれかに記載の薄膜トランジスタ表示板の製造方法。
- 基板と、
前記基板上に形成され、下部膜と上部膜を含むゲート線と、
前記ゲート線上に形成されているゲート絶縁膜と、
前記ゲート絶縁膜上に形成されている半導体層と、
前記半導体層上に形成されている抵抗性接触部材と、
前記抵抗性接触部材上に形成され、下部膜と上部膜を含むソース電極及びドレーン電極と、
前記ソース電極及び前記ドレーン電極の上に形成され、前記ドレーン電極下部膜の一部及び隣接するゲート絶縁膜を露出させる第1接触孔と、前記半導体層の第1部分を露出させる開口部を有する保護膜と、
前記保護膜上に形成され、前記第1接触孔を通じて前記ドレーン電極の下部膜に接触する画素電極と、
前記半導体層の露出された部分の上に形成されている間隔材柱と、
を含む薄膜トランジスタ表示板。 - 前記開口部の少なくとも一部の境界は、前記半導体層の第1部分の一部境界と一致している、請求項13に記載の薄膜トランジスタ表示板。
- 前記ドレーン電極の上部膜の少なくとも一部の境界は、前記第1接触孔の一部の境界と一致している、請求項13に記載の薄膜トランジスタ表示板。
- 前記ゲート線の下部膜の第1部分は上部膜の外側に露出されており、前記保護膜は、前記ゲート線の下部膜の第1部分を露出する第2接触孔をさらに有し、前記第1部分の境界は前記第2接触孔の境界と一致している、請求項13に記載の薄膜トランジスタ表示板。
- 前記ゲート線の下部膜の第1部分を覆う接触補助部材をさらに含む、請求項16に記載の薄膜トランジスタ表示板。
- 前記ゲート線及び前記データ線の下部膜はCrからなり、前記ゲート線及び前記データ線の上部膜はAlからなる、請求項13に記載の薄膜トランジスタ表示板。
- 基板上にゲート線を形成する段階と、
前記ゲート線上にゲート絶縁膜及び半導体層を連続積層する段階と、
前記半導体層上に下部導電膜及び上部導電膜を蒸着する段階と、
前記上部導電膜、前記下部導電膜、及び前記半導体層を写真エッチングする段階と、
保護膜を蒸着する段階と、
前記保護膜を写真エッチングして前記上部導電膜の第1部分と第2部分を露出させる段階と、
前記上部導電膜の第1部分と第2部分を除去して前記下部導電膜の第1部分と第2部分を露出させる段階と、
前記下部導電膜の第1部分を覆う画素電極を形成する段階と、
前記下部導電膜の第2部分を除去して前記半導体層の一部を露出させる段階と、
を含み、ゲート線とデータ線で定義される複数個の画素のうちいずれかの画素の半導体層の露出された部分の上には、スリット露光で第1間隔材柱を形成し、その他の画素の半導体層の露出された部分の上には完全露光で第2間隔材柱を形成する薄膜トランジスタ表示板の製造方法。 - 基板と、
前記基板上に形成され、下部膜と上部膜を含むゲート線と、
前記ゲート線上に形成されているゲート絶縁膜と、
前記ゲート絶縁膜上に形成されている半導体層と、
前記半導体層上に形成されている抵抗性接触部材と、
前記抵抗性接触部材上に形成され、下部膜と上部膜を含むソース電極及びドレーン電極と、
前記ソース電極及び前記ドレーン電極の上に形成され、前記ドレーン電極下部膜の一部及び隣接するゲート絶縁膜を露出させる第1接触孔と、前記半導体層の第1部分を露出させる開口部を有する保護膜と、
前記保護膜上に形成され、前記第1接触孔を通じて前記ドレーン電極の下部膜に接触する画素電極と、
を含み、ゲート線とデータ線で定義される複数の画素のうちいずれかの画素の前記半導体層の露出された部分上には第1間隔材柱が形成されており、その他の画素の前記半導体層の露出された部分上には第2間隔材柱が形成されている、薄膜トランジスタ表示板。 - 基板上にゲート線を形成する段階と、
前記ゲート線上にゲート絶縁膜及び半導体層を連続積層する段階と、
前記半導体層上に下部導電膜及び上部導電膜を蒸着する段階と、
前記上部導電膜、前記下部導電膜、及び前記半導体層を写真エッチングする段階と、
保護膜を蒸着する段階と、
前記保護膜を写真エッチングして前記上部導電膜の第1部分と第2部分を露出させる段階と、
前記上部導電膜の第1部分と第2部分を除去して前記下部導電膜の第1部分と第2部分を露出させる段階と、
前記下部導電膜の第1部分を覆う画素電極を形成する段階と、
前記下部導電膜の第2部分を除去して前記半導体層の一部を露出させる段階と、
窒化膜を蒸着して前記半導体層の露出された部分を覆う段階と、
前記半導体層の露出された部分を覆う窒化膜上に間隔材柱を形成する段階と、
を含む薄膜トランジスタ表示板の製造方法。 - 前記間隔材柱をエッチング防止膜として前記窒化膜をエッチングすることによって前記半導体層の露出された部分を覆う窒化膜のみを残す、請求項21に記載の薄膜トランジスタ表示板の製造方法。
- 基板と、
前記基板上に形成され、下部膜と上部膜を含むゲート線と、
前記ゲート線上に形成されているゲート絶縁膜と、
前記ゲート絶縁膜上に形成されている半導体層と、
前記半導体層上に形成されている抵抗性接触部材と、
前記抵抗性接触部材上に形成され、下部膜と上部膜を含むソース電極及びドレーン電極と、
前記ソース電極及び前記ドレーン電極の上に形成され、前記ドレーン電極下部膜の一部及び隣接したゲート絶縁膜を露出させる第1接触孔と、前記半導体層の第1部分を露出させる開口部を有する保護膜と、
前記保護膜上に形成され、前記第1接触孔を通じて前記ドレーン電極の下部膜と接触する画素電極と、
前記半導体層の露出された部分上に形成されている間隔材柱と、
前記半導体層の露出された部分と前記間隔材柱との間に形成されている窒化膜と、
を含む薄膜トランジスタ表示板。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020030044581A KR100961951B1 (ko) | 2003-07-02 | 2003-07-02 | 박막 트랜지스터 표시판과 그 제조 방법 |
KR1020030055415A KR100980014B1 (ko) | 2003-08-11 | 2003-08-11 | 박막 트랜지스터 표시판과 그 제조 방법 |
KR1020030055416A KR20050017898A (ko) | 2003-08-11 | 2003-08-11 | 박막 트랜지스터 표시판과 그 제조 방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005025205A JP2005025205A (ja) | 2005-01-27 |
JP4675588B2 true JP4675588B2 (ja) | 2011-04-27 |
Family
ID=36757109
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004196782A Expired - Lifetime JP4675588B2 (ja) | 2003-07-02 | 2004-07-02 | 薄膜トランジスタ表示板及びその製造方法 |
Country Status (4)
Country | Link |
---|---|
US (3) | US7023016B2 (ja) |
JP (1) | JP4675588B2 (ja) |
CN (1) | CN100424573C (ja) |
TW (1) | TWI360008B (ja) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100925458B1 (ko) * | 2003-01-17 | 2009-11-06 | 삼성전자주식회사 | 박막 트랜지스터 표시판 및 그 제조 방법 |
KR100980015B1 (ko) * | 2003-08-19 | 2010-09-03 | 삼성전자주식회사 | 박막 트랜지스터 표시판 및 그 제조 방법 |
KR20060016920A (ko) * | 2004-08-19 | 2006-02-23 | 삼성전자주식회사 | 박막 트랜지스터 표시판 및 그 제조 방법 |
KR20070039274A (ko) * | 2005-10-07 | 2007-04-11 | 삼성전자주식회사 | 박막 트랜지스터 표시판의 제조 방법 |
TWI325077B (en) * | 2005-12-29 | 2010-05-21 | Au Optronics Corp | A liquid crystal display device |
KR20070075808A (ko) * | 2006-01-16 | 2007-07-24 | 삼성전자주식회사 | 표시 기판의 제조 방법 및 이를 이용하여 제조한 표시 기판 |
US20080268938A1 (en) * | 2007-04-28 | 2008-10-30 | Stephane Pierre Doutriaux | Systems and methods for gambling using combinations of gaming devices |
CN101299431B (zh) * | 2007-04-30 | 2011-11-16 | 奇美电子股份有限公司 | 显示面板及其薄膜晶体管基板的制造方法 |
CN101762922B (zh) | 2008-12-24 | 2012-05-30 | 京东方科技集团股份有限公司 | 触摸式电子纸及其制造方法 |
KR101318595B1 (ko) * | 2010-08-03 | 2013-10-15 | 샤프 가부시키가이샤 | 박막 트랜지스터 기판 |
CN103413782B (zh) * | 2013-07-23 | 2015-08-26 | 北京京东方光电科技有限公司 | 一种阵列基板及其制作方法和显示面板 |
KR102182428B1 (ko) * | 2014-02-18 | 2020-11-25 | 삼성디스플레이 주식회사 | 표시 장치 및 그 제조 방법 |
US9576984B1 (en) * | 2016-01-14 | 2017-02-21 | Hon Hai Precision Industry Co., Ltd. | Thin film transistor array panel and conducting structure |
KR102406996B1 (ko) * | 2017-04-07 | 2022-06-08 | 삼성전자주식회사 | 이미지 센서 |
US11476282B2 (en) * | 2019-08-09 | 2022-10-18 | Sharp Kabushiki Kaisha | Active matrix substrate and method for manufacturing same |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6242127A (ja) * | 1985-07-19 | 1987-02-24 | ゼネラル・エレクトリツク・カンパニイ | 光阻止及びセル・スペ−サ構造を持つ液晶表示装置 |
JPH03149525A (ja) * | 1989-09-18 | 1991-06-26 | General Electric Co <Ge> | アモルファスシリコン薄膜トランジスタ用の絶縁構造 |
JP2000122071A (ja) * | 1998-10-13 | 2000-04-28 | Toshiba Corp | 液晶表示素子及び液晶表示素子の製造方法 |
JP2000199917A (ja) * | 1998-10-26 | 2000-07-18 | Sharp Corp | 液晶表示装置の製造方法および液晶表示装置 |
JP2000284326A (ja) * | 1999-03-30 | 2000-10-13 | Hitachi Ltd | 液晶表示装置とその製造方法 |
JP2001332740A (ja) * | 2000-05-24 | 2001-11-30 | Toshiba Corp | アレイ基板の製造方法 |
JP2002214624A (ja) * | 2001-01-23 | 2002-07-31 | Sharp Corp | 液晶表示装置 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4904056A (en) * | 1985-07-19 | 1990-02-27 | General Electric Company | Light blocking and cell spacing for liquid crystal matrix displays |
KR0181781B1 (ko) * | 1995-12-30 | 1999-05-01 | 구자홍 | 액정표시장치의 배열기판 및 그 제조방법 |
KR100223153B1 (ko) * | 1996-05-23 | 1999-10-15 | 구자홍 | 액티브 매트릭스 액정표시장치의 제조방법 및 액티브매트릭스액정표시장치 |
US6255130B1 (en) * | 1998-11-19 | 2001-07-03 | Samsung Electronics Co., Ltd. | Thin film transistor array panel and a method for manufacturing the same |
KR100623974B1 (ko) | 1998-12-08 | 2006-12-05 | 삼성전자주식회사 | 액정 표시 장치 및 그 제조 방법 |
JP4436489B2 (ja) | 1999-07-19 | 2010-03-24 | 新和産業株式会社 | フレキシブルチューブ用継手 |
TW451447B (en) * | 1999-12-31 | 2001-08-21 | Samsung Electronics Co Ltd | Contact structures of wirings and methods for manufacturing the same, and thin film transistor array panels including the same and methods for manufacturing the same |
US6885064B2 (en) * | 2000-01-07 | 2005-04-26 | Samsung Electronics Co., Ltd. | Contact structure of wiring and a method for manufacturing the same |
KR100366768B1 (ko) * | 2000-04-19 | 2003-01-09 | 삼성전자 주식회사 | 배선의 접촉부 및 그의 제조 방법과 이를 포함하는 박막 트랜지스터 기판 및 그 제조 방법 |
KR20030027302A (ko) | 2001-09-28 | 2003-04-07 | 삼성전자주식회사 | 저유전율 절연막을 사용하는 박막 트랜지스터 기판 및 그제조 방법 |
JP2002341355A (ja) | 2001-05-16 | 2002-11-27 | Matsushita Electric Ind Co Ltd | 液晶表示装置の製造方法およびアレイ基板ならびに液晶表示装置 |
US6888586B2 (en) * | 2001-06-05 | 2005-05-03 | Lg. Philips Lcd Co., Ltd. | Array substrate for liquid crystal display and method for fabricating the same |
KR100443829B1 (ko) | 2001-06-05 | 2004-08-09 | 엘지.필립스 엘시디 주식회사 | 액정표시소자용 어레이기판 및 그 제조방법 |
JP4771038B2 (ja) | 2001-09-13 | 2011-09-14 | ゲットナー・ファンデーション・エルエルシー | 液晶表示装置 |
JP4395612B2 (ja) * | 2001-09-26 | 2010-01-13 | カシオ計算機株式会社 | 液晶表示素子 |
-
2004
- 2004-07-01 US US10/884,083 patent/US7023016B2/en not_active Expired - Lifetime
- 2004-07-02 CN CNB2004100624092A patent/CN100424573C/zh not_active Expired - Lifetime
- 2004-07-02 TW TW093120015A patent/TWI360008B/zh not_active IP Right Cessation
- 2004-07-02 JP JP2004196782A patent/JP4675588B2/ja not_active Expired - Lifetime
-
2006
- 2006-03-30 US US11/395,434 patent/US7358123B2/en active Active
-
2008
- 2008-04-11 US US12/082,495 patent/US7960732B2/en active Active
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6242127A (ja) * | 1985-07-19 | 1987-02-24 | ゼネラル・エレクトリツク・カンパニイ | 光阻止及びセル・スペ−サ構造を持つ液晶表示装置 |
JPH03149525A (ja) * | 1989-09-18 | 1991-06-26 | General Electric Co <Ge> | アモルファスシリコン薄膜トランジスタ用の絶縁構造 |
JP2000122071A (ja) * | 1998-10-13 | 2000-04-28 | Toshiba Corp | 液晶表示素子及び液晶表示素子の製造方法 |
JP2000199917A (ja) * | 1998-10-26 | 2000-07-18 | Sharp Corp | 液晶表示装置の製造方法および液晶表示装置 |
JP2000284326A (ja) * | 1999-03-30 | 2000-10-13 | Hitachi Ltd | 液晶表示装置とその製造方法 |
JP2001332740A (ja) * | 2000-05-24 | 2001-11-30 | Toshiba Corp | アレイ基板の製造方法 |
JP2002214624A (ja) * | 2001-01-23 | 2002-07-31 | Sharp Corp | 液晶表示装置 |
Also Published As
Publication number | Publication date |
---|---|
US20050030440A1 (en) | 2005-02-10 |
TWI360008B (en) | 2012-03-11 |
US7358123B2 (en) | 2008-04-15 |
CN1580917A (zh) | 2005-02-16 |
US7023016B2 (en) | 2006-04-04 |
US7960732B2 (en) | 2011-06-14 |
CN100424573C (zh) | 2008-10-08 |
JP2005025205A (ja) | 2005-01-27 |
US20080191212A1 (en) | 2008-08-14 |
TW200508748A (en) | 2005-03-01 |
US20060172472A1 (en) | 2006-08-03 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5107504B2 (ja) | 薄膜トランジスタ表示板とその製造方法 | |
KR101325053B1 (ko) | 박막 트랜지스터 기판 및 이의 제조 방법 | |
JP5106762B2 (ja) | 薄膜トランジスタ表示板及びその製造方法 | |
US7358123B2 (en) | Thin film transistor array panel and manufacturing method thereof | |
JP2003043513A (ja) | 液晶表示装置用アレー基板及びその製造方法 | |
JP4731897B2 (ja) | 薄膜トランジスタ表示板とその製造方法 | |
JP4732722B2 (ja) | 薄膜トランジスタ表示板及びその製造方法 | |
JP4898229B2 (ja) | 光マスク、及びそれを用いた薄膜トランジスタ表示パネルの製造方法 | |
JP2010061095A (ja) | 薄膜トランジスタ表示板及びその製造方法 | |
KR101219041B1 (ko) | 박막 트랜지스터 표시판 및 그 제조 방법 | |
US20210183899A1 (en) | Active matrix substrate and method for manufacturing same | |
JP2007102225A (ja) | 薄膜トランジスタ表示板及びその製造方法 | |
KR20070052823A (ko) | 박막 트랜지스터 표시판 및 그 제조 방법 | |
JP2005026690A (ja) | 薄膜トランジスタ表示板及びその製造方法 | |
KR100961951B1 (ko) | 박막 트랜지스터 표시판과 그 제조 방법 | |
KR100980014B1 (ko) | 박막 트랜지스터 표시판과 그 제조 방법 | |
KR20050017898A (ko) | 박막 트랜지스터 표시판과 그 제조 방법 | |
KR20060004718A (ko) | 박막 트랜지스터 표시판과 그 제조 방법 | |
KR20050034115A (ko) | 박막 트랜지스터 표시판과 그 제조 방법 | |
KR20050079717A (ko) | 박막 트랜지스터 표시판과 그 제조 방법 | |
KR20060020171A (ko) | 박막 트랜지스터 표시판 및 그 제조 방법 | |
KR20050068539A (ko) | 박막 트랜지스터 표시판, 그 제조 방법 및 이를 포함하는액정 표시 장치 | |
KR20060023396A (ko) | 박막 트랜지스터 표시판과 그 제조 방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20070628 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20101019 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20110104 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20110126 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20140204 Year of fee payment: 3 |
|
R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 Ref document number: 4675588 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20140204 Year of fee payment: 3 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313111 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20140204 Year of fee payment: 3 |
|
R371 | Transfer withdrawn |
Free format text: JAPANESE INTERMEDIATE CODE: R371 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313111 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313113 |
|
R360 | Written notification for declining of transfer of rights |
Free format text: JAPANESE INTERMEDIATE CODE: R360 |
|
R360 | Written notification for declining of transfer of rights |
Free format text: JAPANESE INTERMEDIATE CODE: R360 |
|
R371 | Transfer withdrawn |
Free format text: JAPANESE INTERMEDIATE CODE: R371 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313113 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
EXPY | Cancellation because of completion of term |