JP4641396B2 - 薄膜コンデンサとその製造方法 - Google Patents
薄膜コンデンサとその製造方法 Download PDFInfo
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- JP4641396B2 JP4641396B2 JP2004256218A JP2004256218A JP4641396B2 JP 4641396 B2 JP4641396 B2 JP 4641396B2 JP 2004256218 A JP2004256218 A JP 2004256218A JP 2004256218 A JP2004256218 A JP 2004256218A JP 4641396 B2 JP4641396 B2 JP 4641396B2
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- Prior art keywords
- upper electrode
- electrode
- thin film
- lower electrode
- wiring
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/01—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate comprising only passive thin-film or thick-film elements formed on a common insulating substrate
- H01L27/016—Thin-film circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/5222—Capacitive arrangements or effects of, or between wiring layers
- H01L23/5223—Capacitor integral with wiring layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/65—Electrodes comprising a noble metal or a noble metal oxide, e.g. platinum (Pt), ruthenium (Ru), ruthenium dioxide (RuO2), iridium (Ir), iridium dioxide (IrO2)
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
- Semiconductor Integrated Circuits (AREA)
- Ceramic Capacitors (AREA)
Description
さらに、薄膜コンデンサとしては以下の文献に開示するものがある。
絶縁膜に覆われる前記上部電極に対して複数のスリット状の開口部を、その各々が前記上部電極の辺を斜めに横切る方向に延在し、且つその各々の両端が前記上記電極内で終端して設けており、
前記上部電極における、上層配線との接続及び前記下部電極と上層配線との接続用開口を、それぞれ対向する角部の近傍で、且つ前記スリット状の開口部の延在方向に位置するようにして設けているものとしている。
さらに、本発明では、製造方法においても工夫している。
[参考例1]
まず、塗布液は次のようにして形成した。プロピレングリコールモノメチルエーテルにて予め0.5mol/kgの濃度に希釈されたバリウムイソプロポキシドの溶液と、同じくプロピレングリコールモノメチルエーテルにて予め0.5mol/kgの濃度に希釈されたチタンイソプロポキシドの溶液とを、それぞれ1mol相当量ずつ混合し、均一になるように攪拌した。
[実施例2]
[参考例3]
[参考例4]
3 絶縁膜
5 密着層
11,311 上部電極
13,113,213 開口部(スリット)
15,17 配線層(上部配線)
21 下部電極
31 高誘電体膜
41 層間絶縁層
50 レジスト
52 開口(下部電極との接続用)
54 コンタクト孔(上部電極との接続用)
56 コンタクト孔(下部電極との接続用)
57 バリア層
58 密着層
60 パッシベーション膜
Claims (3)
- 下部電極と、下部電極上に設けられた高誘電体膜と、該高誘電体膜上に設けられた矩形状の上部電極とを有する薄膜コンデンサにおいて、
絶縁膜に覆われる前記上部電極に対して複数のスリット状の開口部を、その各々が前記上部電極の辺を斜めに横切る方向に延在し、且つその各々の両端が前記上記電極内で終端して設けており、
前記上部電極における、上層配線との接続及び前記下部電極と上層配線との接続用開口を、それぞれ対向する角部の近傍で、且つ前記スリット状の開口部の延在方向に位置するようにして設けていることを特徴とする薄膜コンデンサ。 - 前記上部電極には前記下部電極と上層配線との接続用開口が設けられ、前記複数の開口部は該接続用開口とは大きさが異なることを特徴とする請求項1記載の薄膜コンデンサ。
- 請求項1又は2記載の薄膜コンデンサの製造方法において、
前記上部電極を形成するための電極材料を設けた後、該電極材料のパターニングとともに前記スリット状の開口部のパターニングを行なうことを特徴とする薄膜コンデンサの製造方法。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004256218A JP4641396B2 (ja) | 2004-09-02 | 2004-09-02 | 薄膜コンデンサとその製造方法 |
US11/181,781 US7436647B2 (en) | 2004-09-02 | 2005-07-15 | Thin-film capacitor including an opening therein |
CN200510087909A CN100587867C (zh) | 2004-09-02 | 2005-07-29 | 薄膜电容器及其制造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004256218A JP4641396B2 (ja) | 2004-09-02 | 2004-09-02 | 薄膜コンデンサとその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006073837A JP2006073837A (ja) | 2006-03-16 |
JP4641396B2 true JP4641396B2 (ja) | 2011-03-02 |
Family
ID=35943827
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004256218A Expired - Fee Related JP4641396B2 (ja) | 2004-09-02 | 2004-09-02 | 薄膜コンデンサとその製造方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US7436647B2 (ja) |
JP (1) | JP4641396B2 (ja) |
CN (1) | CN100587867C (ja) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7216406B2 (en) * | 2004-09-29 | 2007-05-15 | Intel Corporation | Method forming split thin film capacitors with multiple voltages |
WO2006082817A1 (ja) * | 2005-02-04 | 2006-08-10 | Nec Corporation | キャパシタ及びそれを内蔵した配線基板 |
EP1758153A2 (en) * | 2005-08-24 | 2007-02-28 | Tokyo Electron Limited | Perovskite type capacitor and method of manufacturing the same |
CN101253618B (zh) * | 2005-09-09 | 2010-12-01 | 夏普株式会社 | 薄膜元件、使用其的显示装置和存储单元、以及它们的制造方法 |
US20090168299A1 (en) * | 2006-04-26 | 2009-07-02 | Basf Se | Method for the production of a coating of a porous, electrically conductive support material with a dielectric, and production of capacitors having high capacity density with the aid of said method |
US7773364B2 (en) | 2006-07-26 | 2010-08-10 | Tdk Corporation | Method of manufacturing capacitor |
JP4770628B2 (ja) * | 2006-07-26 | 2011-09-14 | Tdk株式会社 | キャパシタの製造方法 |
JP2009246180A (ja) * | 2008-03-31 | 2009-10-22 | Tdk Corp | 薄膜コンデンサ |
KR101032342B1 (ko) * | 2009-04-24 | 2011-05-02 | 삼화콘덴서공업주식회사 | 임베디드 커패시터 및 이를 이용한 임베디드 커패시터 시트, 및 그의 제조방법 |
KR101056233B1 (ko) * | 2010-03-16 | 2011-08-11 | 삼성모바일디스플레이주식회사 | 화소 및 이를 구비한 유기전계발광 표시장치 |
WO2018003445A1 (ja) * | 2016-06-28 | 2018-01-04 | 株式会社村田製作所 | キャパシタ |
WO2018083973A1 (ja) * | 2016-11-02 | 2018-05-11 | 株式会社村田製作所 | キャパシタ |
JP7238771B2 (ja) * | 2017-05-31 | 2023-03-14 | Tdk株式会社 | 薄膜コンデンサ及び薄膜コンデンサの製造方法 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002222925A (ja) * | 2001-01-26 | 2002-08-09 | Fujitsu Ltd | キャパシタ及び半導体装置 |
JP2004095577A (ja) * | 2002-08-29 | 2004-03-25 | Renesas Technology Corp | 半導体装置およびその製造方法 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3067386D1 (en) * | 1980-11-28 | 1984-05-10 | Ibm | Capacitor with four-pole structure, the integrity of which can be controlled by direct current tests |
JPS6329942A (ja) * | 1986-07-24 | 1988-02-08 | Toshiba Corp | Mimキヤパシタの容量測定方法 |
JPS63248156A (ja) * | 1987-04-02 | 1988-10-14 | Nec Corp | 半導体装置 |
JPH01223757A (ja) * | 1988-03-02 | 1989-09-06 | Mitsubishi Electric Corp | 半導体装置 |
JP2765871B2 (ja) * | 1988-09-22 | 1998-06-18 | 株式会社日立製作所 | 半導体装置 |
JPH0474462A (ja) * | 1990-07-17 | 1992-03-09 | Nec Corp | 半導体集積回路用遅延素子 |
JP2944295B2 (ja) * | 1992-02-26 | 1999-08-30 | 日本電気アイシーマイコンシステム株式会社 | 半導体集積回路装置 |
JPH06216316A (ja) * | 1993-01-20 | 1994-08-05 | Oki Electric Ind Co Ltd | キャパシタ |
JP3206243B2 (ja) * | 1993-09-20 | 2001-09-10 | 富士通株式会社 | ボンディングパッド及びその形成方法 |
JP3389435B2 (ja) | 1996-12-26 | 2003-03-24 | 京セラ株式会社 | 薄膜コンデンサ |
TW460748B (en) * | 1998-05-26 | 2001-10-21 | Matsushita Electronics Corp | Capacitor and method for fabricating the same |
US6266227B1 (en) * | 1998-08-26 | 2001-07-24 | Kyocera Corporation | Thin-film capacitor |
US6356429B2 (en) * | 1999-02-18 | 2002-03-12 | Tdk Corporation | Capacitor |
US7161793B2 (en) * | 2002-11-14 | 2007-01-09 | Fujitsu Limited | Layer capacitor element and production process as well as electronic device |
-
2004
- 2004-09-02 JP JP2004256218A patent/JP4641396B2/ja not_active Expired - Fee Related
-
2005
- 2005-07-15 US US11/181,781 patent/US7436647B2/en not_active Expired - Fee Related
- 2005-07-29 CN CN200510087909A patent/CN100587867C/zh not_active Expired - Fee Related
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002222925A (ja) * | 2001-01-26 | 2002-08-09 | Fujitsu Ltd | キャパシタ及び半導体装置 |
JP2004095577A (ja) * | 2002-08-29 | 2004-03-25 | Renesas Technology Corp | 半導体装置およびその製造方法 |
Also Published As
Publication number | Publication date |
---|---|
JP2006073837A (ja) | 2006-03-16 |
US20060046377A1 (en) | 2006-03-02 |
CN100587867C (zh) | 2010-02-03 |
US7436647B2 (en) | 2008-10-14 |
CN1744245A (zh) | 2006-03-08 |
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