CN100587867C - 薄膜电容器及其制造方法 - Google Patents
薄膜电容器及其制造方法 Download PDFInfo
- Publication number
- CN100587867C CN100587867C CN200510087909A CN200510087909A CN100587867C CN 100587867 C CN100587867 C CN 100587867C CN 200510087909 A CN200510087909 A CN 200510087909A CN 200510087909 A CN200510087909 A CN 200510087909A CN 100587867 C CN100587867 C CN 100587867C
- Authority
- CN
- China
- Prior art keywords
- mentioned
- upper electrode
- opening
- film
- lower electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/01—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate comprising only passive thin-film or thick-film elements formed on a common insulating substrate
- H01L27/016—Thin-film circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/5222—Capacitive arrangements or effects of, or between wiring layers
- H01L23/5223—Capacitor integral with wiring layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/65—Electrodes comprising a noble metal or a noble metal oxide, e.g. platinum (Pt), ruthenium (Ru), ruthenium dioxide (RuO2), iridium (Ir), iridium dioxide (IrO2)
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
- Semiconductor Integrated Circuits (AREA)
- Ceramic Capacitors (AREA)
Abstract
Description
Claims (15)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004256218 | 2004-09-02 | ||
JP2004256218A JP4641396B2 (ja) | 2004-09-02 | 2004-09-02 | 薄膜コンデンサとその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1744245A CN1744245A (zh) | 2006-03-08 |
CN100587867C true CN100587867C (zh) | 2010-02-03 |
Family
ID=35943827
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN200510087909A Expired - Fee Related CN100587867C (zh) | 2004-09-02 | 2005-07-29 | 薄膜电容器及其制造方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US7436647B2 (zh) |
JP (1) | JP4641396B2 (zh) |
CN (1) | CN100587867C (zh) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7216406B2 (en) * | 2004-09-29 | 2007-05-15 | Intel Corporation | Method forming split thin film capacitors with multiple voltages |
WO2006082817A1 (ja) * | 2005-02-04 | 2006-08-10 | Nec Corporation | キャパシタ及びそれを内蔵した配線基板 |
EP1758153A2 (en) * | 2005-08-24 | 2007-02-28 | Tokyo Electron Limited | Perovskite type capacitor and method of manufacturing the same |
CN101253618B (zh) * | 2005-09-09 | 2010-12-01 | 夏普株式会社 | 薄膜元件、使用其的显示装置和存储单元、以及它们的制造方法 |
US20090168299A1 (en) * | 2006-04-26 | 2009-07-02 | Basf Se | Method for the production of a coating of a porous, electrically conductive support material with a dielectric, and production of capacitors having high capacity density with the aid of said method |
US7773364B2 (en) | 2006-07-26 | 2010-08-10 | Tdk Corporation | Method of manufacturing capacitor |
JP4770628B2 (ja) * | 2006-07-26 | 2011-09-14 | Tdk株式会社 | キャパシタの製造方法 |
JP2009246180A (ja) * | 2008-03-31 | 2009-10-22 | Tdk Corp | 薄膜コンデンサ |
KR101032342B1 (ko) * | 2009-04-24 | 2011-05-02 | 삼화콘덴서공업주식회사 | 임베디드 커패시터 및 이를 이용한 임베디드 커패시터 시트, 및 그의 제조방법 |
KR101056233B1 (ko) * | 2010-03-16 | 2011-08-11 | 삼성모바일디스플레이주식회사 | 화소 및 이를 구비한 유기전계발광 표시장치 |
WO2018003445A1 (ja) * | 2016-06-28 | 2018-01-04 | 株式会社村田製作所 | キャパシタ |
WO2018083973A1 (ja) * | 2016-11-02 | 2018-05-11 | 株式会社村田製作所 | キャパシタ |
JP7238771B2 (ja) * | 2017-05-31 | 2023-03-14 | Tdk株式会社 | 薄膜コンデンサ及び薄膜コンデンサの製造方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1237792A (zh) * | 1998-05-26 | 1999-12-08 | 松下电子工业株式会社 | 电容元件及其制造方法 |
US6266227B1 (en) * | 1998-08-26 | 2001-07-24 | Kyocera Corporation | Thin-film capacitor |
US6356429B2 (en) * | 1999-02-18 | 2002-03-12 | Tdk Corporation | Capacitor |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3067386D1 (en) * | 1980-11-28 | 1984-05-10 | Ibm | Capacitor with four-pole structure, the integrity of which can be controlled by direct current tests |
JPS6329942A (ja) * | 1986-07-24 | 1988-02-08 | Toshiba Corp | Mimキヤパシタの容量測定方法 |
JPS63248156A (ja) * | 1987-04-02 | 1988-10-14 | Nec Corp | 半導体装置 |
JPH01223757A (ja) * | 1988-03-02 | 1989-09-06 | Mitsubishi Electric Corp | 半導体装置 |
JP2765871B2 (ja) * | 1988-09-22 | 1998-06-18 | 株式会社日立製作所 | 半導体装置 |
JPH0474462A (ja) * | 1990-07-17 | 1992-03-09 | Nec Corp | 半導体集積回路用遅延素子 |
JP2944295B2 (ja) * | 1992-02-26 | 1999-08-30 | 日本電気アイシーマイコンシステム株式会社 | 半導体集積回路装置 |
JPH06216316A (ja) * | 1993-01-20 | 1994-08-05 | Oki Electric Ind Co Ltd | キャパシタ |
JP3206243B2 (ja) * | 1993-09-20 | 2001-09-10 | 富士通株式会社 | ボンディングパッド及びその形成方法 |
JP3389435B2 (ja) | 1996-12-26 | 2003-03-24 | 京セラ株式会社 | 薄膜コンデンサ |
JP4827299B2 (ja) * | 2001-01-26 | 2011-11-30 | 富士通株式会社 | キャパシタ及び半導体装置 |
JP4445189B2 (ja) * | 2002-08-29 | 2010-04-07 | 株式会社ルネサステクノロジ | 半導体装置およびその製造方法 |
US7161793B2 (en) * | 2002-11-14 | 2007-01-09 | Fujitsu Limited | Layer capacitor element and production process as well as electronic device |
-
2004
- 2004-09-02 JP JP2004256218A patent/JP4641396B2/ja not_active Expired - Fee Related
-
2005
- 2005-07-15 US US11/181,781 patent/US7436647B2/en not_active Expired - Fee Related
- 2005-07-29 CN CN200510087909A patent/CN100587867C/zh not_active Expired - Fee Related
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1237792A (zh) * | 1998-05-26 | 1999-12-08 | 松下电子工业株式会社 | 电容元件及其制造方法 |
US6266227B1 (en) * | 1998-08-26 | 2001-07-24 | Kyocera Corporation | Thin-film capacitor |
US6356429B2 (en) * | 1999-02-18 | 2002-03-12 | Tdk Corporation | Capacitor |
Also Published As
Publication number | Publication date |
---|---|
JP2006073837A (ja) | 2006-03-16 |
US20060046377A1 (en) | 2006-03-02 |
JP4641396B2 (ja) | 2011-03-02 |
US7436647B2 (en) | 2008-10-14 |
CN1744245A (zh) | 2006-03-08 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: OKI SEMICONDUCTOR CO., LTD. Free format text: FORMER OWNER: OKI ELECTRIC INDUSTRY CO., LTD. Effective date: 20131210 |
|
C41 | Transfer of patent application or patent right or utility model | ||
C56 | Change in the name or address of the patentee | ||
CP01 | Change in the name or title of a patent holder |
Address after: Tokyo, Japan Patentee after: LAPIS SEMICONDUCTOR Co.,Ltd. Address before: Tokyo, Japan Patentee before: Oki Semiconductor Co.,Ltd. |
|
CP02 | Change in the address of a patent holder |
Address after: yokohama Patentee after: LAPIS SEMICONDUCTOR Co.,Ltd. Address before: Tokyo, Japan Patentee before: LAPIS SEMICONDUCTOR Co.,Ltd. |
|
TR01 | Transfer of patent right |
Effective date of registration: 20131210 Address after: Tokyo, Japan Patentee after: Oki Semiconductor Co.,Ltd. Address before: Tokyo, Japan Patentee before: Oki Electric Industry Co.,Ltd. |
|
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20100203 Termination date: 20140729 |
|
EXPY | Termination of patent right or utility model |