JP4618064B2 - 半導体装置およびその製造方法 - Google Patents

半導体装置およびその製造方法 Download PDF

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Publication number
JP4618064B2
JP4618064B2 JP2005263366A JP2005263366A JP4618064B2 JP 4618064 B2 JP4618064 B2 JP 4618064B2 JP 2005263366 A JP2005263366 A JP 2005263366A JP 2005263366 A JP2005263366 A JP 2005263366A JP 4618064 B2 JP4618064 B2 JP 4618064B2
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JP
Japan
Prior art keywords
layer
low concentration
buried
element isolation
cathode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2005263366A
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English (en)
Japanese (ja)
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JP2007080905A (ja
Inventor
千広 荒井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
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Sony Corp
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Filing date
Publication date
Priority to JP2005263366A priority Critical patent/JP4618064B2/ja
Application filed by Sony Corp filed Critical Sony Corp
Priority to US12/066,629 priority patent/US7928511B2/en
Priority to PCT/JP2006/315837 priority patent/WO2007032165A1/ja
Priority to CN2006800412984A priority patent/CN101300685B/zh
Priority to EP06782631A priority patent/EP1933390A4/en
Priority to KR1020087005372A priority patent/KR101248084B1/ko
Priority to TW095130581A priority patent/TW200715594A/zh
Publication of JP2007080905A publication Critical patent/JP2007080905A/ja
Application granted granted Critical
Publication of JP4618064B2 publication Critical patent/JP4618064B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/103—Integrated devices the at least one element covered by H10F30/00 having potential barriers, e.g. integrated devices comprising photodiodes or phototransistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
    • H01L21/76283—Lateral isolation by refilling of trenches with dielectric material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/201—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/107—Integrated devices having multiple elements covered by H10F30/00 in a repetitive configuration, e.g. radiation detectors comprising photodiode arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/95—Circuit arrangements
    • H10F77/953—Circuit arrangements for devices having potential barriers
    • H10F77/957—Circuit arrangements for devices having potential barriers for position-sensitive photodetectors, e.g. lateral-effect photodiodes or quadrant photodiodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F99/00—Subject matter not provided for in other groups of this subclass

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Light Receiving Elements (AREA)
  • Element Separation (AREA)
  • Solid State Image Pick-Up Elements (AREA)
JP2005263366A 2005-09-12 2005-09-12 半導体装置およびその製造方法 Expired - Fee Related JP4618064B2 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2005263366A JP4618064B2 (ja) 2005-09-12 2005-09-12 半導体装置およびその製造方法
PCT/JP2006/315837 WO2007032165A1 (ja) 2005-09-12 2006-08-10 半導体装置およびその製造方法
CN2006800412984A CN101300685B (zh) 2005-09-12 2006-08-10 半导体装置及其制造方法
EP06782631A EP1933390A4 (en) 2005-09-12 2006-08-10 SEMICONDUCTOR COMPONENT AND METHOD FOR THE PRODUCTION THEREOF
US12/066,629 US7928511B2 (en) 2005-09-12 2006-08-10 Semiconductor device and method for manufacturing semiconductor device
KR1020087005372A KR101248084B1 (ko) 2005-09-12 2006-08-10 반도체 장치 및 그 제조 방법
TW095130581A TW200715594A (en) 2005-09-12 2006-08-21 Semiconductor device and fabrication method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005263366A JP4618064B2 (ja) 2005-09-12 2005-09-12 半導体装置およびその製造方法

Publications (2)

Publication Number Publication Date
JP2007080905A JP2007080905A (ja) 2007-03-29
JP4618064B2 true JP4618064B2 (ja) 2011-01-26

Family

ID=37864763

Family Applications (1)

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JP2005263366A Expired - Fee Related JP4618064B2 (ja) 2005-09-12 2005-09-12 半導体装置およびその製造方法

Country Status (7)

Country Link
US (1) US7928511B2 (enExample)
EP (1) EP1933390A4 (enExample)
JP (1) JP4618064B2 (enExample)
KR (1) KR101248084B1 (enExample)
CN (1) CN101300685B (enExample)
TW (1) TW200715594A (enExample)
WO (1) WO2007032165A1 (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8575010B2 (en) * 2008-02-26 2013-11-05 Soitec Method for fabricating a semiconductor substrate
CN103915525A (zh) * 2014-04-08 2014-07-09 上海电力学院 一种提高光电转化性能的红外焦平面探测器
CN107039425B (zh) * 2017-03-29 2018-07-13 湖北京邦科技有限公司 一种半导体光电倍增器件
FR3071356B1 (fr) * 2017-09-21 2020-11-13 Safran Electronics & Defense Dispositif de detection et de localisation comprenant une pluralite de photodiodes
DE102018105752B4 (de) * 2018-03-13 2019-10-24 X-Fab Semiconductor Foundries Gmbh Elektrisch modulierte Fotodiode und Verfahren zu deren Herstellung
KR102017125B1 (ko) * 2018-03-28 2019-09-03 주식회사 포셈 포토다이오드의 제조방법
CN108573989B (zh) * 2018-04-28 2021-09-14 中国科学院半导体研究所 硅基雪崩光电探测器阵列及其制作方法
JP7039411B2 (ja) 2018-07-20 2022-03-22 株式会社東芝 光検出器、光検出システム、ライダー装置及び車
US11018168B2 (en) * 2018-09-20 2021-05-25 Taiwan Semiconductor Manufacturing Co., Ltd. Image sensor with improved timing resolution and photon detection probability
JP7222851B2 (ja) 2019-08-29 2023-02-15 株式会社東芝 光検出器、光検出システム、ライダー装置、及び車
JP7153001B2 (ja) 2019-09-18 2022-10-13 株式会社東芝 光検出器、光検出システム、ライダー装置、及び車
WO2025085277A1 (en) * 2023-10-18 2025-04-24 Gpd Optoelectronics Corp. Radial wedge and central quadrant photodetector having a lock-in amplifier and/or overlays
CN117954378A (zh) * 2024-03-26 2024-04-30 粤芯半导体技术股份有限公司 一种半导体器件及其制备方法

Family Cites Families (23)

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FR2666453A1 (fr) 1990-08-31 1992-03-06 Commissariat Energie Atomique Batterie de photopiles montees en serie.
JPH0818093A (ja) * 1994-06-30 1996-01-19 Sony Corp 半導体受光素子及び半導体装置並びにそれらの作製方法
US5610790A (en) * 1995-01-20 1997-03-11 Xilinx, Inc. Method and structure for providing ESD protection for silicon on insulator integrated circuits
JPH0953984A (ja) * 1995-08-18 1997-02-25 Mitsubishi Electric Corp 輝度検出回路
JPH09237912A (ja) * 1995-12-28 1997-09-09 Sony Corp 受光素子及びその製造方法
JPH09331080A (ja) * 1996-06-12 1997-12-22 Sony Corp 受光素子を含む半導体装置およびその製造方法
JP3918220B2 (ja) * 1997-02-27 2007-05-23 ソニー株式会社 半導体装置及びその製造方法
JP4131031B2 (ja) 1998-03-17 2008-08-13 ソニー株式会社 受光素子を有する半導体装置、光学ピックアップ装置、および受光素子を有する半導体装置の製造方法
JP2000150842A (ja) * 1998-11-05 2000-05-30 Sharp Corp 受光素子及びその製造方法
JP2000277792A (ja) * 1999-03-29 2000-10-06 Siird Center:Kk 多チャンネルｐｉｎフォトダイオードの駆動方法
JP4131059B2 (ja) 1999-08-23 2008-08-13 ソニー株式会社 受光素子を有する半導体装置、光学ピックアップ装置、および受光素子を有する半導体装置の製造方法
JP3717104B2 (ja) * 2000-05-30 2005-11-16 シャープ株式会社 回路内蔵受光素子
JP3974322B2 (ja) 2000-12-07 2007-09-12 株式会社日立製作所 光半導体集積回路装置及び光記憶再生装置
US6894324B2 (en) * 2001-02-15 2005-05-17 United Microelectronics Corp. Silicon-on-insulator diodes and ESD protection circuits
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Also Published As

Publication number Publication date
CN101300685B (zh) 2010-05-19
TWI307968B (enExample) 2009-03-21
US7928511B2 (en) 2011-04-19
KR101248084B1 (ko) 2013-03-27
EP1933390A1 (en) 2008-06-18
TW200715594A (en) 2007-04-16
KR20080053464A (ko) 2008-06-13
WO2007032165A1 (ja) 2007-03-22
CN101300685A (zh) 2008-11-05
EP1933390A4 (en) 2012-05-23
JP2007080905A (ja) 2007-03-29
US20100155867A1 (en) 2010-06-24

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