JP4595320B2 - 露光装置、及びデバイス製造方法 - Google Patents

露光装置、及びデバイス製造方法 Download PDF

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Publication number
JP4595320B2
JP4595320B2 JP2003412585A JP2003412585A JP4595320B2 JP 4595320 B2 JP4595320 B2 JP 4595320B2 JP 2003412585 A JP2003412585 A JP 2003412585A JP 2003412585 A JP2003412585 A JP 2003412585A JP 4595320 B2 JP4595320 B2 JP 4595320B2
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Prior art keywords
liquid
substrate
optical system
projection optical
exposure
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JP2003412585A
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Japanese (ja)
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JP2004207711A5 (enrdf_load_stackoverflow
JP2004207711A (ja
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博之 長坂
伸貴 馬込
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Nikon Corp
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Nikon Corp
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2003412585A 2002-12-10 2003-12-10 露光装置、及びデバイス製造方法 Expired - Fee Related JP4595320B2 (ja)

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JP2003412585A JP4595320B2 (ja) 2002-12-10 2003-12-10 露光装置、及びデバイス製造方法

Applications Claiming Priority (2)

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JP2002357931 2002-12-10
JP2003412585A JP4595320B2 (ja) 2002-12-10 2003-12-10 露光装置、及びデバイス製造方法

Related Child Applications (2)

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JP2009035502A Division JP4596076B2 (ja) 2002-12-10 2009-02-18 露光装置、露光方法、及びデバイス製造方法
JP2010075762A Division JP2010161409A (ja) 2002-12-10 2010-03-29 露光装置及び露光方法、デバイス製造方法

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JP2004207711A JP2004207711A (ja) 2004-07-22
JP2004207711A5 JP2004207711A5 (enrdf_load_stackoverflow) 2009-04-02
JP4595320B2 true JP4595320B2 (ja) 2010-12-08

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JP2003412585A Expired - Fee Related JP4595320B2 (ja) 2002-12-10 2003-12-10 露光装置、及びデバイス製造方法

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JP (1) JP4595320B2 (enrdf_load_stackoverflow)

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JP4752375B2 (ja) * 2004-08-03 2011-08-17 株式会社ニコン 露光装置、露光方法及びデバイス製造方法
JP3870207B2 (ja) 2004-08-05 2007-01-17 キヤノン株式会社 液浸露光装置及びデバイス製造方法
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JP2006178327A (ja) * 2004-12-24 2006-07-06 Nikon Corp 光学素子及びその製造方法、並びに投影露光装置
JP2006179759A (ja) * 2004-12-24 2006-07-06 Nikon Corp 光学素子及び投影露光装置
JP4551758B2 (ja) * 2004-12-27 2010-09-29 株式会社東芝 液浸露光方法および半導体装置の製造方法
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EP1681597B1 (en) * 2005-01-14 2010-03-10 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
US7710653B2 (en) 2005-01-28 2010-05-04 Nikon Corporation Projection optical system, exposure system, and exposure method
JP4957970B2 (ja) * 2005-01-28 2012-06-20 株式会社ニコン 投影光学系、露光装置、および露光方法
EP1863070B1 (en) 2005-01-31 2016-04-27 Nikon Corporation Exposure apparatus and method for manufacturing device
JP4807086B2 (ja) * 2005-02-21 2011-11-02 株式会社ニコン 露光装置、露光方法、及びデバイス製造方法
JP5343958B2 (ja) * 2005-02-21 2013-11-13 株式会社ニコン 露光装置、露光方法、及びデバイス製造方法
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US7324185B2 (en) 2005-03-04 2008-01-29 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20090047607A1 (en) * 2005-03-31 2009-02-19 Hiroyuki Nagasaka Exposure method, exposure apparatus and device fabricating methods
TW200644079A (en) * 2005-03-31 2006-12-16 Nikon Corp Exposure apparatus, exposure method, and device production method
JP2006310827A (ja) * 2005-03-31 2006-11-09 Nikon Corp 露光装置、露光方法、及びデバイス製造方法
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JP4858062B2 (ja) * 2005-04-27 2012-01-18 株式会社ニコン 露光方法、露光装置、デバイス製造方法、及び膜の評価方法
KR20080005362A (ko) * 2005-04-27 2008-01-11 가부시키가이샤 니콘 노광 방법, 노광 장치, 디바이스 제조 방법 및 막의 평가방법
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KR101544336B1 (ko) 2005-05-12 2015-08-12 가부시키가이샤 니콘 투영 광학계, 노광 장치 및 노광 방법
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