JP4542324B2 - 研磨状態監視装置及びポリッシング装置 - Google Patents
研磨状態監視装置及びポリッシング装置 Download PDFInfo
- Publication number
- JP4542324B2 JP4542324B2 JP2003321639A JP2003321639A JP4542324B2 JP 4542324 B2 JP4542324 B2 JP 4542324B2 JP 2003321639 A JP2003321639 A JP 2003321639A JP 2003321639 A JP2003321639 A JP 2003321639A JP 4542324 B2 JP4542324 B2 JP 4542324B2
- Authority
- JP
- Japan
- Prior art keywords
- polishing
- light
- polished
- light receiving
- sampling
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/12—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving optical means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/005—Control means for lapping machines or devices
- B24B37/013—Devices or means for detecting lapping completion
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Priority Applications (10)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003321639A JP4542324B2 (ja) | 2002-10-17 | 2003-09-12 | 研磨状態監視装置及びポリッシング装置 |
| CN 200910133188 CN101530983B (zh) | 2002-10-17 | 2003-10-15 | 抛光状态监测装置和抛光装置以及方法 |
| KR1020057004531A KR101011425B1 (ko) | 2002-10-17 | 2003-10-15 | 폴리싱 상태 모니터링 장치와 폴리싱 장치 및 방법 |
| US10/526,933 US7252575B2 (en) | 2002-10-17 | 2003-10-15 | Polishing state monitoring apparatus and polishing apparatus and method |
| EP03758725.0A EP1551593B1 (en) | 2002-10-17 | 2003-10-15 | Polishing state monitoring apparatus and polishing apparatus and method |
| PCT/JP2003/013171 WO2004035265A1 (en) | 2002-10-17 | 2003-10-15 | Polishing state monitoring apparatus and polishing apparatus and method |
| TW092128804A TWI336279B (en) | 2002-10-17 | 2003-10-17 | Polishing state monitoring apparatus and polishing apparatus and method |
| US11/819,453 US7438627B2 (en) | 2002-10-17 | 2007-06-27 | Polishing state monitoring method |
| US12/230,317 US7645181B2 (en) | 2002-10-17 | 2008-08-27 | Polishing state monitoring apparatus and polishing apparatus |
| US12/627,333 US8342907B2 (en) | 2002-10-17 | 2009-11-30 | Polishing state monitoring method |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002303628 | 2002-10-17 | ||
| JP2003321639A JP4542324B2 (ja) | 2002-10-17 | 2003-09-12 | 研磨状態監視装置及びポリッシング装置 |
Related Child Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009172232A Division JP2009233853A (ja) | 2002-10-17 | 2009-07-23 | ポリッシング装置及び研磨方法 |
| JP2009172231A Division JP5137910B2 (ja) | 2002-10-17 | 2009-07-23 | ポリッシング装置及び研磨方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2004154928A JP2004154928A (ja) | 2004-06-03 |
| JP2004154928A5 JP2004154928A5 (enExample) | 2006-04-20 |
| JP4542324B2 true JP4542324B2 (ja) | 2010-09-15 |
Family
ID=32109475
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003321639A Expired - Lifetime JP4542324B2 (ja) | 2002-10-17 | 2003-09-12 | 研磨状態監視装置及びポリッシング装置 |
Country Status (6)
| Country | Link |
|---|---|
| US (4) | US7252575B2 (enExample) |
| EP (1) | EP1551593B1 (enExample) |
| JP (1) | JP4542324B2 (enExample) |
| KR (1) | KR101011425B1 (enExample) |
| TW (1) | TWI336279B (enExample) |
| WO (1) | WO2004035265A1 (enExample) |
Families Citing this family (81)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005203729A (ja) * | 2003-12-19 | 2005-07-28 | Ebara Corp | 基板研磨装置 |
| JP4581427B2 (ja) * | 2004-02-27 | 2010-11-17 | 富士電機システムズ株式会社 | 膜厚評価方法、研磨終点検出方法 |
| TWI352645B (en) | 2004-05-28 | 2011-11-21 | Ebara Corp | Apparatus for inspecting and polishing substrate r |
| KR101521414B1 (ko) * | 2005-08-22 | 2015-05-19 | 어플라이드 머티어리얼스, 인코포레이티드 | 화학적 기계적 폴리싱의 스펙트럼 기반 모니터링을 위한 장치 및 방법 |
| US8392012B2 (en) | 2008-10-27 | 2013-03-05 | Applied Materials, Inc. | Multiple libraries for spectrographic monitoring of zones of a substrate during processing |
| US7406394B2 (en) | 2005-08-22 | 2008-07-29 | Applied Materials, Inc. | Spectra based endpointing for chemical mechanical polishing |
| JP5534672B2 (ja) * | 2005-08-22 | 2014-07-02 | アプライド マテリアルズ インコーポレイテッド | 化学機械的研磨のスペクトルに基づく監視のための装置および方法 |
| US7764377B2 (en) | 2005-08-22 | 2010-07-27 | Applied Materials, Inc. | Spectrum based endpointing for chemical mechanical polishing |
| US8260446B2 (en) | 2005-08-22 | 2012-09-04 | Applied Materials, Inc. | Spectrographic monitoring of a substrate during processing using index values |
| US7409260B2 (en) | 2005-08-22 | 2008-08-05 | Applied Materials, Inc. | Substrate thickness measuring during polishing |
| JP2007067179A (ja) * | 2005-08-31 | 2007-03-15 | Shin Etsu Handotai Co Ltd | 半導体ウエーハの鏡面研磨方法及び鏡面研磨システム |
| US7636611B2 (en) * | 2005-10-28 | 2009-12-22 | Samsung Austin Semiconductor, L.P. | Fuzzy logic system for process control in chemical mechanical polishing |
| KR101381341B1 (ko) | 2006-10-06 | 2014-04-04 | 가부시끼가이샤 도시바 | 가공 종점 검지방법, 연마방법 및 연마장치 |
| US7998358B2 (en) | 2006-10-31 | 2011-08-16 | Applied Materials, Inc. | Peak-based endpointing for chemical mechanical polishing |
| US7444198B2 (en) | 2006-12-15 | 2008-10-28 | Applied Materials, Inc. | Determining physical property of substrate |
| JP2008186873A (ja) * | 2007-01-26 | 2008-08-14 | Tokyo Seimitsu Co Ltd | Cmp装置の段差解消終点検知装置及び段差解消終点検知方法 |
| KR101678082B1 (ko) | 2007-02-23 | 2016-11-21 | 어플라이드 머티어리얼스, 인코포레이티드 | 연마 엔드포인트들을 결정하기 위한 스펙트럼 사용 |
| US7952708B2 (en) | 2007-04-02 | 2011-05-31 | Applied Materials, Inc. | High throughput measurement system |
| JP5112007B2 (ja) | 2007-10-31 | 2013-01-09 | 株式会社荏原製作所 | 研磨装置および研磨方法 |
| JP2009129970A (ja) | 2007-11-20 | 2009-06-11 | Ebara Corp | 研磨装置及び研磨方法 |
| US20090275265A1 (en) * | 2008-05-02 | 2009-11-05 | Applied Materials, Inc. | Endpoint detection in chemical mechanical polishing using multiple spectra |
| JP5254668B2 (ja) * | 2008-06-03 | 2013-08-07 | 株式会社荏原製作所 | 研磨終点検出方法 |
| JP4739393B2 (ja) * | 2008-11-11 | 2011-08-03 | 株式会社荏原製作所 | 研磨終点検知用の光の波長選択に用いられるダイヤグラムの作成方法、光の波長選択方法、研磨終点検出方法、研磨終点検出装置、および研磨装置 |
| JP5436969B2 (ja) * | 2009-05-27 | 2014-03-05 | 株式会社荏原製作所 | 研磨終点検知方法、研磨終点検知装置、研磨方法、および研磨装置 |
| US8388408B2 (en) | 2008-10-10 | 2013-03-05 | Ebara Corporation | Method of making diagram for use in selection of wavelength of light for polishing endpoint detection, method for selecting wavelength of light for polishing endpoint detection, and polishing endpoint detection method |
| US20100103422A1 (en) * | 2008-10-27 | 2010-04-29 | Applied Materials, Inc. | Goodness of fit in spectrographic monitoring of a substrate during processing |
| WO2010062497A2 (en) * | 2008-10-27 | 2010-06-03 | Applied Materials, Inc. | Goodness of fit in spectrographic monitoring of a substrate during processing |
| US20100114532A1 (en) * | 2008-11-03 | 2010-05-06 | Applied Materials, Inc. | Weighted spectrographic monitoring of a substrate during processing |
| US8989890B2 (en) * | 2008-11-07 | 2015-03-24 | Applied Materials, Inc. | GST film thickness monitoring |
| US8352061B2 (en) | 2008-11-14 | 2013-01-08 | Applied Materials, Inc. | Semi-quantitative thickness determination |
| KR20110120893A (ko) * | 2009-01-16 | 2011-11-04 | 어플라이드 머티어리얼스, 인코포레이티드 | 윈도우 지지부를 가지는 폴리싱 패드 및 시스템 |
| JP5348530B2 (ja) * | 2009-01-21 | 2013-11-20 | 株式会社ニコン | 研磨装置および研磨方法 |
| US8392009B2 (en) * | 2009-03-31 | 2013-03-05 | Taiwan Semiconductor Manufacturing Company, Ltd. | Advanced process control with novel sampling policy |
| US8157614B2 (en) * | 2009-04-30 | 2012-04-17 | Applied Materials, Inc. | Method of making and apparatus having windowless polishing pad and protected fiber |
| CN101927453B (zh) * | 2009-06-20 | 2015-05-06 | 无锡华润上华半导体有限公司 | 浅沟槽隔离结构的研磨装置 |
| KR101170760B1 (ko) * | 2009-07-24 | 2012-08-03 | 세메스 주식회사 | 기판 연마 장치 |
| JP5583946B2 (ja) | 2009-10-06 | 2014-09-03 | 株式会社荏原製作所 | 研磨終点検知方法および研磨終点検知装置 |
| WO2011056485A2 (en) * | 2009-11-03 | 2011-05-12 | Applied Materials, Inc. | Endpoint method using peak location of spectra contour plots versus time |
| EP2513955A1 (en) | 2009-12-15 | 2012-10-24 | Osaka University | Polishing method, polishing apparatus and polishing tool |
| US8581707B2 (en) * | 2009-12-16 | 2013-11-12 | Pyramid Meriden Inc. | Methods and apparatus for identifying and categorizing distributed devices |
| JP5728239B2 (ja) | 2010-03-02 | 2015-06-03 | 株式会社荏原製作所 | 研磨監視方法、研磨方法、研磨監視装置、および研磨装置 |
| WO2011139571A2 (en) * | 2010-05-05 | 2011-11-10 | Applied Materials, Inc. | Dynamically or adaptively tracking spectrum features for endpoint detection |
| US8834229B2 (en) * | 2010-05-05 | 2014-09-16 | Applied Materials, Inc. | Dynamically tracking spectrum features for endpoint detection |
| JP5612945B2 (ja) | 2010-07-23 | 2014-10-22 | 株式会社荏原製作所 | 基板の研磨の進捗を監視する方法および研磨装置 |
| US8954186B2 (en) | 2010-07-30 | 2015-02-10 | Applied Materials, Inc. | Selecting reference libraries for monitoring of multiple zones on a substrate |
| US20110032225A1 (en) * | 2010-10-05 | 2011-02-10 | Phu Dang | Systems, methods, and articles for manufacture for the intelligent control of decorative bodies |
| JP5980476B2 (ja) | 2010-12-27 | 2016-08-31 | 株式会社荏原製作所 | ポリッシング装置およびポリッシング方法 |
| US8547538B2 (en) | 2011-04-21 | 2013-10-01 | Applied Materials, Inc. | Construction of reference spectra with variations in environmental effects |
| US8657646B2 (en) * | 2011-05-09 | 2014-02-25 | Applied Materials, Inc. | Endpoint detection using spectrum feature trajectories |
| JP6005467B2 (ja) | 2011-10-26 | 2016-10-12 | 株式会社荏原製作所 | 研磨方法および研磨装置 |
| US9744081B2 (en) * | 2012-03-05 | 2017-08-29 | Robbin Field Riordan | Tampon with looped string |
| KR101892914B1 (ko) * | 2012-03-08 | 2018-08-29 | 어플라이드 머티어리얼스, 인코포레이티드 | 측정된 스펙트럼에 대한 광학 모델의 피팅 |
| TW201336622A (zh) * | 2012-03-14 | 2013-09-16 | Hsiu Fong Machinery Co Ltd | 彈性拋光載具及應用其的拋光裝置及拋光方法 |
| JP2013219248A (ja) | 2012-04-10 | 2013-10-24 | Ebara Corp | 研磨装置および研磨方法 |
| US9011202B2 (en) * | 2012-04-25 | 2015-04-21 | Applied Materials, Inc. | Fitting of optical model with diffraction effects to measured spectrum |
| US20140024293A1 (en) * | 2012-07-19 | 2014-01-23 | Jimin Zhang | Control Of Overpolishing Of Multiple Substrates On the Same Platen In Chemical Mechanical Polishing |
| US20140120802A1 (en) * | 2012-10-31 | 2014-05-01 | Wayne O. Duescher | Abrasive platen wafer surface optical monitoring system |
| JP6105371B2 (ja) | 2013-04-25 | 2017-03-29 | 株式会社荏原製作所 | 研磨方法および研磨装置 |
| JP6215602B2 (ja) * | 2013-07-11 | 2017-10-18 | 株式会社荏原製作所 | 研磨装置および研磨状態監視方法 |
| TWI635929B (zh) | 2013-07-11 | 2018-09-21 | 日商荏原製作所股份有限公司 | 研磨裝置及研磨狀態監視方法 |
| JP6275421B2 (ja) * | 2013-09-06 | 2018-02-07 | 株式会社荏原製作所 | 研磨方法および研磨装置 |
| US9375824B2 (en) | 2013-11-27 | 2016-06-28 | Applied Materials, Inc. | Adjustment of polishing rates during substrate polishing with predictive filters |
| KR101539208B1 (ko) * | 2013-12-02 | 2015-07-24 | 주식회사 케이씨텍 | 화학 기계적 연마 시스템의 웨이퍼 막두께 모니터링 장치 및 방법 |
| JP6293519B2 (ja) * | 2014-03-05 | 2018-03-14 | 株式会社荏原製作所 | 研磨装置および研磨方法 |
| JP6423600B2 (ja) | 2014-03-12 | 2018-11-14 | 株式会社荏原製作所 | 膜厚測定装置、及び、研磨装置 |
| US9425109B2 (en) * | 2014-05-30 | 2016-08-23 | Taiwan Semiconductor Manufacturing Co., Ltd. | Planarization method, method for polishing wafer, and CMP system |
| JP6475604B2 (ja) * | 2015-11-24 | 2019-02-27 | 株式会社荏原製作所 | 研磨方法 |
| JP2018001296A (ja) * | 2016-06-28 | 2018-01-11 | 株式会社荏原製作所 | 研磨装置、研磨方法、及び研磨制御プログラム |
| TWI784719B (zh) | 2016-08-26 | 2022-11-21 | 美商應用材料股份有限公司 | 獲得代表在基板上的層的厚度的測量的方法,及量測系統和電腦程式產品 |
| JP6920849B2 (ja) * | 2017-03-27 | 2021-08-18 | 株式会社荏原製作所 | 基板処理方法および装置 |
| JP7023062B2 (ja) | 2017-07-24 | 2022-02-21 | 株式会社荏原製作所 | 基板研磨装置及び方法 |
| JP6847811B2 (ja) * | 2017-10-24 | 2021-03-24 | 株式会社荏原製作所 | 研磨方法および研磨装置 |
| JP7068831B2 (ja) * | 2018-01-18 | 2022-05-17 | 株式会社荏原製作所 | 研磨装置 |
| JP7265885B2 (ja) * | 2019-02-27 | 2023-04-27 | 株式会社荏原製作所 | 研磨装置、研磨方法、プログラムを格納した記憶媒体 |
| JP7253458B2 (ja) * | 2019-06-27 | 2023-04-06 | 株式会社荏原製作所 | 光学式膜厚測定装置の最適な動作レシピを決定する方法、装置、およびシステム |
| JP7464412B2 (ja) * | 2020-03-09 | 2024-04-09 | 株式会社東京精密 | 加工装置 |
| US12288724B2 (en) | 2021-03-04 | 2025-04-29 | Applied Materials, Inc. | Region classification of film non-uniformity based on processing of substrate images |
| JP2023148801A (ja) * | 2022-03-30 | 2023-10-13 | 株式会社東京精密 | 研磨終点検出装置及びcmp装置 |
| CN115308140A (zh) * | 2022-10-11 | 2022-11-08 | 杭州众硅电子科技有限公司 | 一种化学机械抛光的在线监测装置 |
| JP2024117029A (ja) * | 2023-02-16 | 2024-08-28 | 株式会社東京精密 | 研磨終点検出装置及び方法並びにcmp装置 |
| CN120388965B (zh) * | 2025-03-18 | 2025-11-21 | 中国电子产品可靠性与环境试验研究所((工业和信息化部电子第五研究所)(中国赛宝实验室)) | 晶圆的测试结构、测试晶圆和测试晶圆的制备方法 |
Family Cites Families (31)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08174411A (ja) * | 1994-12-22 | 1996-07-09 | Ebara Corp | ポリッシング装置 |
| US5872633A (en) * | 1996-07-26 | 1999-02-16 | Speedfam Corporation | Methods and apparatus for detecting removal of thin film layers during planarization |
| US6111634A (en) * | 1997-05-28 | 2000-08-29 | Lam Research Corporation | Method and apparatus for in-situ monitoring of thickness using a multi-wavelength spectrometer during chemical-mechanical polishing |
| US6271047B1 (en) * | 1998-05-21 | 2001-08-07 | Nikon Corporation | Layer-thickness detection methods and apparatus for wafers and the like, and polishing apparatus comprising same |
| US6361646B1 (en) * | 1998-06-08 | 2002-03-26 | Speedfam-Ipec Corporation | Method and apparatus for endpoint detection for chemical mechanical polishing |
| US6106662A (en) * | 1998-06-08 | 2000-08-22 | Speedfam-Ipec Corporation | Method and apparatus for endpoint detection for chemical mechanical polishing |
| US6280289B1 (en) | 1998-11-02 | 2001-08-28 | Applied Materials, Inc. | Method and apparatus for detecting an end-point in chemical mechanical polishing of metal layers |
| US6159073A (en) * | 1998-11-02 | 2000-12-12 | Applied Materials, Inc. | Method and apparatus for measuring substrate layer thickness during chemical mechanical polishing |
| WO2000026613A1 (en) * | 1998-11-02 | 2000-05-11 | Applied Materials, Inc. | Optical monitoring of radial ranges in chemical mechanical polishing a metal layer on a substrate |
| US7037172B1 (en) * | 1999-04-01 | 2006-05-02 | Beaver Creek Concepts Inc | Advanced wafer planarizing |
| US6204922B1 (en) * | 1998-12-11 | 2001-03-20 | Filmetrics, Inc. | Rapid and accurate thin film measurement of individual layers in a multi-layered or patterned sample |
| US6172756B1 (en) * | 1998-12-11 | 2001-01-09 | Filmetrics, Inc. | Rapid and accurate end point detection in a noisy environment |
| TW428079B (en) * | 1998-12-24 | 2001-04-01 | Sharp Kk | Thickness measurement apparatus of thin film using light interference method |
| US6247998B1 (en) | 1999-01-25 | 2001-06-19 | Applied Materials, Inc. | Method and apparatus for determining substrate layer thickness during chemical mechanical polishing |
| US6190234B1 (en) | 1999-01-25 | 2001-02-20 | Applied Materials, Inc. | Endpoint detection with light beams of different wavelengths |
| JP3367496B2 (ja) | 2000-01-20 | 2003-01-14 | 株式会社ニコン | 研磨体、平坦化装置、半導体デバイス製造方法、および半導体デバイス |
| JP3327289B2 (ja) * | 2000-03-29 | 2002-09-24 | 株式会社ニコン | 工程終了点測定装置及び測定方法及び研磨装置及び半導体デバイス製造方法及び信号処理プログラムを記録した記録媒体 |
| WO2000071971A1 (en) * | 1999-05-24 | 2000-11-30 | Luxtron Corporation | Optical techniques for measuring layer thicknesses |
| JP3782629B2 (ja) * | 1999-12-13 | 2006-06-07 | 株式会社荏原製作所 | 膜厚測定方法及び膜厚測定装置 |
| US6510395B2 (en) | 2000-08-11 | 2003-01-21 | Sensys Instruments Corporation | Method of detecting residue on a polished wafer |
| US6891627B1 (en) * | 2000-09-20 | 2005-05-10 | Kla-Tencor Technologies Corp. | Methods and systems for determining a critical dimension and overlay of a specimen |
| US6805613B1 (en) * | 2000-10-17 | 2004-10-19 | Speedfam-Ipec Corporation | Multiprobe detection system for chemical-mechanical planarization tool |
| JP2002198342A (ja) * | 2000-12-27 | 2002-07-12 | Tokyo Seimitsu Co Ltd | ウェーハ研磨装置の研磨終点検出装置 |
| US6511363B2 (en) * | 2000-12-27 | 2003-01-28 | Tokyo Seimitsu Co., Ltd. | Polishing end point detecting device for wafer polishing apparatus |
| US6747283B1 (en) * | 2001-03-19 | 2004-06-08 | Lam Research Corporation | In-situ detection of thin-metal interface using high resolution spectral analysis of optical interference |
| US6664557B1 (en) * | 2001-03-19 | 2003-12-16 | Lam Research Corporation | In-situ detection of thin-metal interface using optical interference |
| US6812478B2 (en) * | 2001-03-19 | 2004-11-02 | Lam Research Corporation | In-situ detection of thin-metal interface using optical interference via a dynamically updated reference |
| US6618130B2 (en) * | 2001-08-28 | 2003-09-09 | Speedfam-Ipec Corporation | Method and apparatus for optical endpoint detection during chemical mechanical polishing |
| JP4020739B2 (ja) * | 2002-09-27 | 2007-12-12 | 株式会社荏原製作所 | ポリッシング装置 |
| US6969619B1 (en) * | 2003-02-18 | 2005-11-29 | Novellus Systems, Inc. | Full spectrum endpoint detection |
| US6991514B1 (en) * | 2003-02-21 | 2006-01-31 | Verity Instruments, Inc. | Optical closed-loop control system for a CMP apparatus and method of manufacture thereof |
-
2003
- 2003-09-12 JP JP2003321639A patent/JP4542324B2/ja not_active Expired - Lifetime
- 2003-10-15 EP EP03758725.0A patent/EP1551593B1/en not_active Expired - Lifetime
- 2003-10-15 KR KR1020057004531A patent/KR101011425B1/ko not_active Expired - Lifetime
- 2003-10-15 US US10/526,933 patent/US7252575B2/en not_active Expired - Lifetime
- 2003-10-15 WO PCT/JP2003/013171 patent/WO2004035265A1/en not_active Ceased
- 2003-10-17 TW TW092128804A patent/TWI336279B/zh not_active IP Right Cessation
-
2007
- 2007-06-27 US US11/819,453 patent/US7438627B2/en not_active Expired - Lifetime
-
2008
- 2008-08-27 US US12/230,317 patent/US7645181B2/en not_active Expired - Lifetime
-
2009
- 2009-11-30 US US12/627,333 patent/US8342907B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| US20100075576A1 (en) | 2010-03-25 |
| EP1551593B1 (en) | 2013-08-14 |
| US7438627B2 (en) | 2008-10-21 |
| TWI336279B (en) | 2011-01-21 |
| JP2004154928A (ja) | 2004-06-03 |
| KR20050050106A (ko) | 2005-05-27 |
| KR101011425B1 (ko) | 2011-01-28 |
| US20060166606A1 (en) | 2006-07-27 |
| TW200407528A (en) | 2004-05-16 |
| WO2004035265A1 (en) | 2004-04-29 |
| US7252575B2 (en) | 2007-08-07 |
| EP1551593A1 (en) | 2005-07-13 |
| US7645181B2 (en) | 2010-01-12 |
| US20090011680A1 (en) | 2009-01-08 |
| US8342907B2 (en) | 2013-01-01 |
| US20070254557A1 (en) | 2007-11-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP4542324B2 (ja) | 研磨状態監視装置及びポリッシング装置 | |
| JP5137910B2 (ja) | ポリッシング装置及び研磨方法 | |
| JP4464642B2 (ja) | 研磨状態監視装置、研磨状態監視方法、研磨装置及び研磨方法 | |
| KR101357290B1 (ko) | 가공 종점 검지방법, 연마방법 및 연마장치 | |
| TWI661174B (zh) | 膜厚測定方法、膜厚測定裝置、研磨方法及研磨裝置 | |
| US9011202B2 (en) | Fitting of optical model with diffraction effects to measured spectrum | |
| KR20110099651A (ko) | 연마 감시 방법, 연마 방법, 연마 감시 장치, 및 연마 장치 | |
| JP2013219248A (ja) | 研磨装置および研磨方法 | |
| JP5583946B2 (ja) | 研磨終点検知方法および研磨終点検知装置 | |
| JP5254668B2 (ja) | 研磨終点検出方法 | |
| US20250312883A1 (en) | Polishing method and polishing apparatus |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20060222 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20060222 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20090602 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20090723 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20100406 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20100603 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20100622 |
|
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20100625 |
|
| R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 Ref document number: 4542324 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130702 Year of fee payment: 3 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20140702 Year of fee payment: 4 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| EXPY | Cancellation because of completion of term |