TWI336279B - Polishing state monitoring apparatus and polishing apparatus and method - Google Patents

Polishing state monitoring apparatus and polishing apparatus and method Download PDF

Info

Publication number
TWI336279B
TWI336279B TW092128804A TW92128804A TWI336279B TW I336279 B TWI336279 B TW I336279B TW 092128804 A TW092128804 A TW 092128804A TW 92128804 A TW92128804 A TW 92128804A TW I336279 B TWI336279 B TW I336279B
Authority
TW
Taiwan
Prior art keywords
light
polishing
workpiece
unit
sampling
Prior art date
Application number
TW092128804A
Other languages
English (en)
Chinese (zh)
Other versions
TW200407528A (en
Inventor
Yoichi Kobayashi
Shunsuke Nakai
Hitoshi Tsuji
Yasuo Tsukuda
Junki Ishimoto
Kazunari Shinya
Original Assignee
Ebara Corp
Shimadzu Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ebara Corp, Shimadzu Corp filed Critical Ebara Corp
Publication of TW200407528A publication Critical patent/TW200407528A/zh
Application granted granted Critical
Publication of TWI336279B publication Critical patent/TWI336279B/zh

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/12—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving optical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/005—Control means for lapping machines or devices
    • B24B37/013—Devices or means for detecting lapping completion
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
TW092128804A 2002-10-17 2003-10-17 Polishing state monitoring apparatus and polishing apparatus and method TWI336279B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002303628 2002-10-17
JP2003321639A JP4542324B2 (ja) 2002-10-17 2003-09-12 研磨状態監視装置及びポリッシング装置

Publications (2)

Publication Number Publication Date
TW200407528A TW200407528A (en) 2004-05-16
TWI336279B true TWI336279B (en) 2011-01-21

Family

ID=32109475

Family Applications (1)

Application Number Title Priority Date Filing Date
TW092128804A TWI336279B (en) 2002-10-17 2003-10-17 Polishing state monitoring apparatus and polishing apparatus and method

Country Status (6)

Country Link
US (4) US7252575B2 (enExample)
EP (1) EP1551593B1 (enExample)
JP (1) JP4542324B2 (enExample)
KR (1) KR101011425B1 (enExample)
TW (1) TWI336279B (enExample)
WO (1) WO2004035265A1 (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI468256B (enExample) * 2012-03-14 2015-01-11
TWI793138B (zh) * 2017-07-24 2023-02-21 日商荏原製作所股份有限公司 基板研磨裝置及方法
TWI848130B (zh) * 2019-06-27 2024-07-11 日商荏原製作所股份有限公司 決定光學式膜厚測定裝置最適合作動方案之方法、裝置、及系統

Families Citing this family (78)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005203729A (ja) * 2003-12-19 2005-07-28 Ebara Corp 基板研磨装置
JP4581427B2 (ja) * 2004-02-27 2010-11-17 富士電機システムズ株式会社 膜厚評価方法、研磨終点検出方法
TWI352645B (en) 2004-05-28 2011-11-21 Ebara Corp Apparatus for inspecting and polishing substrate r
KR101521414B1 (ko) * 2005-08-22 2015-05-19 어플라이드 머티어리얼스, 인코포레이티드 화학적 기계적 폴리싱의 스펙트럼 기반 모니터링을 위한 장치 및 방법
US8392012B2 (en) 2008-10-27 2013-03-05 Applied Materials, Inc. Multiple libraries for spectrographic monitoring of zones of a substrate during processing
US7406394B2 (en) 2005-08-22 2008-07-29 Applied Materials, Inc. Spectra based endpointing for chemical mechanical polishing
JP5534672B2 (ja) * 2005-08-22 2014-07-02 アプライド マテリアルズ インコーポレイテッド 化学機械的研磨のスペクトルに基づく監視のための装置および方法
US7764377B2 (en) 2005-08-22 2010-07-27 Applied Materials, Inc. Spectrum based endpointing for chemical mechanical polishing
US8260446B2 (en) 2005-08-22 2012-09-04 Applied Materials, Inc. Spectrographic monitoring of a substrate during processing using index values
US7409260B2 (en) 2005-08-22 2008-08-05 Applied Materials, Inc. Substrate thickness measuring during polishing
JP2007067179A (ja) * 2005-08-31 2007-03-15 Shin Etsu Handotai Co Ltd 半導体ウエーハの鏡面研磨方法及び鏡面研磨システム
US7636611B2 (en) * 2005-10-28 2009-12-22 Samsung Austin Semiconductor, L.P. Fuzzy logic system for process control in chemical mechanical polishing
KR101381341B1 (ko) 2006-10-06 2014-04-04 가부시끼가이샤 도시바 가공 종점 검지방법, 연마방법 및 연마장치
US7998358B2 (en) 2006-10-31 2011-08-16 Applied Materials, Inc. Peak-based endpointing for chemical mechanical polishing
US7444198B2 (en) 2006-12-15 2008-10-28 Applied Materials, Inc. Determining physical property of substrate
JP2008186873A (ja) * 2007-01-26 2008-08-14 Tokyo Seimitsu Co Ltd Ｃｍｐ装置の段差解消終点検知装置及び段差解消終点検知方法
KR101678082B1 (ko) 2007-02-23 2016-11-21 어플라이드 머티어리얼스, 인코포레이티드 연마 엔드포인트들을 결정하기 위한 스펙트럼 사용
US7952708B2 (en) 2007-04-02 2011-05-31 Applied Materials, Inc. High throughput measurement system
JP5112007B2 (ja) 2007-10-31 2013-01-09 株式会社荏原製作所 研磨装置および研磨方法
JP2009129970A (ja) 2007-11-20 2009-06-11 Ebara Corp 研磨装置及び研磨方法
US20090275265A1 (en) * 2008-05-02 2009-11-05 Applied Materials, Inc. Endpoint detection in chemical mechanical polishing using multiple spectra
JP5254668B2 (ja) * 2008-06-03 2013-08-07 株式会社荏原製作所 研磨終点検出方法
JP4739393B2 (ja) * 2008-11-11 2011-08-03 株式会社荏原製作所 研磨終点検知用の光の波長選択に用いられるダイヤグラムの作成方法、光の波長選択方法、研磨終点検出方法、研磨終点検出装置、および研磨装置
JP5436969B2 (ja) * 2009-05-27 2014-03-05 株式会社荏原製作所 研磨終点検知方法、研磨終点検知装置、研磨方法、および研磨装置
US8388408B2 (en) 2008-10-10 2013-03-05 Ebara Corporation Method of making diagram for use in selection of wavelength of light for polishing endpoint detection, method for selecting wavelength of light for polishing endpoint detection, and polishing endpoint detection method
US20100103422A1 (en) * 2008-10-27 2010-04-29 Applied Materials, Inc. Goodness of fit in spectrographic monitoring of a substrate during processing
WO2010062497A2 (en) * 2008-10-27 2010-06-03 Applied Materials, Inc. Goodness of fit in spectrographic monitoring of a substrate during processing
US20100114532A1 (en) * 2008-11-03 2010-05-06 Applied Materials, Inc. Weighted spectrographic monitoring of a substrate during processing
US8989890B2 (en) * 2008-11-07 2015-03-24 Applied Materials, Inc. GST film thickness monitoring
US8352061B2 (en) 2008-11-14 2013-01-08 Applied Materials, Inc. Semi-quantitative thickness determination
KR20110120893A (ko) * 2009-01-16 2011-11-04 어플라이드 머티어리얼스, 인코포레이티드 윈도우 지지부를 가지는 폴리싱 패드 및 시스템
JP5348530B2 (ja) * 2009-01-21 2013-11-20 株式会社ニコン 研磨装置および研磨方法
US8392009B2 (en) * 2009-03-31 2013-03-05 Taiwan Semiconductor Manufacturing Company, Ltd. Advanced process control with novel sampling policy
US8157614B2 (en) * 2009-04-30 2012-04-17 Applied Materials, Inc. Method of making and apparatus having windowless polishing pad and protected fiber
CN101927453B (zh) * 2009-06-20 2015-05-06 无锡华润上华半导体有限公司 浅沟槽隔离结构的研磨装置
KR101170760B1 (ko) * 2009-07-24 2012-08-03 세메스 주식회사 기판 연마 장치
JP5583946B2 (ja) 2009-10-06 2014-09-03 株式会社荏原製作所 研磨終点検知方法および研磨終点検知装置
WO2011056485A2 (en) * 2009-11-03 2011-05-12 Applied Materials, Inc. Endpoint method using peak location of spectra contour plots versus time
EP2513955A1 (en) 2009-12-15 2012-10-24 Osaka University Polishing method, polishing apparatus and polishing tool
US8581707B2 (en) * 2009-12-16 2013-11-12 Pyramid Meriden Inc. Methods and apparatus for identifying and categorizing distributed devices
JP5728239B2 (ja) 2010-03-02 2015-06-03 株式会社荏原製作所 研磨監視方法、研磨方法、研磨監視装置、および研磨装置
WO2011139571A2 (en) * 2010-05-05 2011-11-10 Applied Materials, Inc. Dynamically or adaptively tracking spectrum features for endpoint detection
US8834229B2 (en) * 2010-05-05 2014-09-16 Applied Materials, Inc. Dynamically tracking spectrum features for endpoint detection
JP5612945B2 (ja) 2010-07-23 2014-10-22 株式会社荏原製作所 基板の研磨の進捗を監視する方法および研磨装置
US8954186B2 (en) 2010-07-30 2015-02-10 Applied Materials, Inc. Selecting reference libraries for monitoring of multiple zones on a substrate
US20110032225A1 (en) * 2010-10-05 2011-02-10 Phu Dang Systems, methods, and articles for manufacture for the intelligent control of decorative bodies
JP5980476B2 (ja) 2010-12-27 2016-08-31 株式会社荏原製作所 ポリッシング装置およびポリッシング方法
US8547538B2 (en) 2011-04-21 2013-10-01 Applied Materials, Inc. Construction of reference spectra with variations in environmental effects
US8657646B2 (en) * 2011-05-09 2014-02-25 Applied Materials, Inc. Endpoint detection using spectrum feature trajectories
JP6005467B2 (ja) 2011-10-26 2016-10-12 株式会社荏原製作所 研磨方法および研磨装置
US9744081B2 (en) * 2012-03-05 2017-08-29 Robbin Field Riordan Tampon with looped string
KR101892914B1 (ko) * 2012-03-08 2018-08-29 어플라이드 머티어리얼스, 인코포레이티드 측정된 스펙트럼에 대한 광학 모델의 피팅
JP2013219248A (ja) 2012-04-10 2013-10-24 Ebara Corp 研磨装置および研磨方法
US9011202B2 (en) * 2012-04-25 2015-04-21 Applied Materials, Inc. Fitting of optical model with diffraction effects to measured spectrum
US20140024293A1 (en) * 2012-07-19 2014-01-23 Jimin Zhang Control Of Overpolishing Of Multiple Substrates On the Same Platen In Chemical Mechanical Polishing
US20140120802A1 (en) * 2012-10-31 2014-05-01 Wayne O. Duescher Abrasive platen wafer surface optical monitoring system
JP6105371B2 (ja) 2013-04-25 2017-03-29 株式会社荏原製作所 研磨方法および研磨装置
JP6215602B2 (ja) * 2013-07-11 2017-10-18 株式会社荏原製作所 研磨装置および研磨状態監視方法
TWI635929B (zh) 2013-07-11 2018-09-21 日商荏原製作所股份有限公司 研磨裝置及研磨狀態監視方法
JP6275421B2 (ja) * 2013-09-06 2018-02-07 株式会社荏原製作所 研磨方法および研磨装置
US9375824B2 (en) 2013-11-27 2016-06-28 Applied Materials, Inc. Adjustment of polishing rates during substrate polishing with predictive filters
KR101539208B1 (ko) * 2013-12-02 2015-07-24 주식회사 케이씨텍 화학 기계적 연마 시스템의 웨이퍼 막두께 모니터링 장치 및 방법
JP6293519B2 (ja) * 2014-03-05 2018-03-14 株式会社荏原製作所 研磨装置および研磨方法
JP6423600B2 (ja) 2014-03-12 2018-11-14 株式会社荏原製作所 膜厚測定装置、及び、研磨装置
US9425109B2 (en) * 2014-05-30 2016-08-23 Taiwan Semiconductor Manufacturing Co., Ltd. Planarization method, method for polishing wafer, and CMP system
JP6475604B2 (ja) * 2015-11-24 2019-02-27 株式会社荏原製作所 研磨方法
JP2018001296A (ja) * 2016-06-28 2018-01-11 株式会社荏原製作所 研磨装置、研磨方法、及び研磨制御プログラム
TWI784719B (zh) 2016-08-26 2022-11-21 美商應用材料股份有限公司 獲得代表在基板上的層的厚度的測量的方法，及量測系統和電腦程式產品
JP6920849B2 (ja) * 2017-03-27 2021-08-18 株式会社荏原製作所 基板処理方法および装置
JP6847811B2 (ja) * 2017-10-24 2021-03-24 株式会社荏原製作所 研磨方法および研磨装置
JP7068831B2 (ja) * 2018-01-18 2022-05-17 株式会社荏原製作所 研磨装置
JP7265885B2 (ja) * 2019-02-27 2023-04-27 株式会社荏原製作所 研磨装置、研磨方法、プログラムを格納した記憶媒体
JP7464412B2 (ja) * 2020-03-09 2024-04-09 株式会社東京精密 加工装置
US12288724B2 (en) 2021-03-04 2025-04-29 Applied Materials, Inc. Region classification of film non-uniformity based on processing of substrate images
JP2023148801A (ja) * 2022-03-30 2023-10-13 株式会社東京精密 研磨終点検出装置及びｃｍｐ装置
CN115308140A (zh) * 2022-10-11 2022-11-08 杭州众硅电子科技有限公司 一种化学机械抛光的在线监测装置
JP2024117029A (ja) * 2023-02-16 2024-08-28 株式会社東京精密 研磨終点検出装置及び方法並びにｃｍｐ装置
CN120388965B (zh) * 2025-03-18 2025-11-21 中国电子产品可靠性与环境试验研究所（（工业和信息化部电子第五研究所）（中国赛宝实验室）） 晶圆的测试结构、测试晶圆和测试晶圆的制备方法

Family Cites Families (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08174411A (ja) * 1994-12-22 1996-07-09 Ebara Corp ポリッシング装置
US5872633A (en) * 1996-07-26 1999-02-16 Speedfam Corporation Methods and apparatus for detecting removal of thin film layers during planarization
US6111634A (en) * 1997-05-28 2000-08-29 Lam Research Corporation Method and apparatus for in-situ monitoring of thickness using a multi-wavelength spectrometer during chemical-mechanical polishing
US6271047B1 (en) * 1998-05-21 2001-08-07 Nikon Corporation Layer-thickness detection methods and apparatus for wafers and the like, and polishing apparatus comprising same
US6361646B1 (en) * 1998-06-08 2002-03-26 Speedfam-Ipec Corporation Method and apparatus for endpoint detection for chemical mechanical polishing
US6106662A (en) * 1998-06-08 2000-08-22 Speedfam-Ipec Corporation Method and apparatus for endpoint detection for chemical mechanical polishing
US6280289B1 (en) 1998-11-02 2001-08-28 Applied Materials, Inc. Method and apparatus for detecting an end-point in chemical mechanical polishing of metal layers
US6159073A (en) * 1998-11-02 2000-12-12 Applied Materials, Inc. Method and apparatus for measuring substrate layer thickness during chemical mechanical polishing
WO2000026613A1 (en) * 1998-11-02 2000-05-11 Applied Materials, Inc. Optical monitoring of radial ranges in chemical mechanical polishing a metal layer on a substrate
US7037172B1 (en) * 1999-04-01 2006-05-02 Beaver Creek Concepts Inc Advanced wafer planarizing
US6204922B1 (en) * 1998-12-11 2001-03-20 Filmetrics, Inc. Rapid and accurate thin film measurement of individual layers in a multi-layered or patterned sample
US6172756B1 (en) * 1998-12-11 2001-01-09 Filmetrics, Inc. Rapid and accurate end point detection in a noisy environment
TW428079B (en) * 1998-12-24 2001-04-01 Sharp Kk Thickness measurement apparatus of thin film using light interference method
US6247998B1 (en) 1999-01-25 2001-06-19 Applied Materials, Inc. Method and apparatus for determining substrate layer thickness during chemical mechanical polishing
US6190234B1 (en) 1999-01-25 2001-02-20 Applied Materials, Inc. Endpoint detection with light beams of different wavelengths
JP3367496B2 (ja) 2000-01-20 2003-01-14 株式会社ニコン 研磨体、平坦化装置、半導体デバイス製造方法、および半導体デバイス
JP3327289B2 (ja) * 2000-03-29 2002-09-24 株式会社ニコン 工程終了点測定装置及び測定方法及び研磨装置及び半導体デバイス製造方法及び信号処理プログラムを記録した記録媒体
WO2000071971A1 (en) * 1999-05-24 2000-11-30 Luxtron Corporation Optical techniques for measuring layer thicknesses
JP3782629B2 (ja) * 1999-12-13 2006-06-07 株式会社荏原製作所 膜厚測定方法及び膜厚測定装置
US6510395B2 (en) 2000-08-11 2003-01-21 Sensys Instruments Corporation Method of detecting residue on a polished wafer
US6891627B1 (en) * 2000-09-20 2005-05-10 Kla-Tencor Technologies Corp. Methods and systems for determining a critical dimension and overlay of a specimen
US6805613B1 (en) * 2000-10-17 2004-10-19 Speedfam-Ipec Corporation Multiprobe detection system for chemical-mechanical planarization tool
JP2002198342A (ja) * 2000-12-27 2002-07-12 Tokyo Seimitsu Co Ltd ウェーハ研磨装置の研磨終点検出装置
US6511363B2 (en) * 2000-12-27 2003-01-28 Tokyo Seimitsu Co., Ltd. Polishing end point detecting device for wafer polishing apparatus
US6747283B1 (en) * 2001-03-19 2004-06-08 Lam Research Corporation In-situ detection of thin-metal interface using high resolution spectral analysis of optical interference
US6664557B1 (en) * 2001-03-19 2003-12-16 Lam Research Corporation In-situ detection of thin-metal interface using optical interference
US6812478B2 (en) * 2001-03-19 2004-11-02 Lam Research Corporation In-situ detection of thin-metal interface using optical interference via a dynamically updated reference
US6618130B2 (en) * 2001-08-28 2003-09-09 Speedfam-Ipec Corporation Method and apparatus for optical endpoint detection during chemical mechanical polishing
JP4020739B2 (ja) * 2002-09-27 2007-12-12 株式会社荏原製作所 ポリッシング装置
US6969619B1 (en) * 2003-02-18 2005-11-29 Novellus Systems, Inc. Full spectrum endpoint detection
US6991514B1 (en) * 2003-02-21 2006-01-31 Verity Instruments, Inc. Optical closed-loop control system for a CMP apparatus and method of manufacture thereof

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI468256B (enExample) * 2012-03-14 2015-01-11
TWI793138B (zh) * 2017-07-24 2023-02-21 日商荏原製作所股份有限公司 基板研磨裝置及方法
TWI848130B (zh) * 2019-06-27 2024-07-11 日商荏原製作所股份有限公司 決定光學式膜厚測定裝置最適合作動方案之方法、裝置、及系統

Also Published As

Publication number Publication date
US20100075576A1 (en) 2010-03-25
EP1551593B1 (en) 2013-08-14
JP4542324B2 (ja) 2010-09-15
US7438627B2 (en) 2008-10-21
JP2004154928A (ja) 2004-06-03
KR20050050106A (ko) 2005-05-27
KR101011425B1 (ko) 2011-01-28
US20060166606A1 (en) 2006-07-27
TW200407528A (en) 2004-05-16
WO2004035265A1 (en) 2004-04-29
US7252575B2 (en) 2007-08-07
EP1551593A1 (en) 2005-07-13
US7645181B2 (en) 2010-01-12
US20090011680A1 (en) 2009-01-08
US8342907B2 (en) 2013-01-01
US20070254557A1 (en) 2007-11-01

Similar Documents

Publication Publication Date Title
TWI336279B (en) Polishing state monitoring apparatus and polishing apparatus and method
US7042581B2 (en) Optical techniques for measuring layer thicknesses and other surface characteristics of objects such as semiconductor wafers
CN100488729C (zh) 抛光状态监测装置和抛光装置以及方法
USRE39145E1 (en) Method and apparatus for in-situ monitoring of plasma etch and deposition processes using a pulsed broadband light source
JP6005467B2 (ja) 研磨方法および研磨装置
US6654132B1 (en) Optical techniques for measuring layer thicknesses and other surface characteristics of objects such as semiconductor wafers
KR100795616B1 (ko) 상이한 파장을 갖는 광선으로 종료점을 검출하는 방법 및장치
TWI624881B (zh) 研磨方法
JP6473050B2 (ja) 研磨装置
JPH113877A (ja) 研磨方法及びそれを用いた研磨装置
JP2002011655A (ja) 半導体ウェハの研磨終了点検出装置及びその方法
US20090298387A1 (en) Polishing end point detection method
US20060166608A1 (en) Spectral imaging of substrates
JP6902452B2 (ja) 研磨装置
JP2023071317A (ja) 研磨装置および研磨方法
JP2000077371A (ja) 検出方法及び検出装置及び研摩装置
JP2013053923A (ja) 厚さ測定装置
JP2005032849A (ja) ウェーハ研磨装置
JP3460134B2 (ja) 検知方法、膜厚計測方法、検知装置、膜厚計測装置、及び研磨装置
JP2002043262A (ja) 研磨状況モニタ装置、測定装置、研磨装置、半導体デバイス製造方法、及びに半導体デバイス
JP2001260016A (ja) 研磨状態測定装置及び測定方法及び研磨装置及び半導体デバイス製造方法

Legal Events

Date Code Title Description
MK4A Expiration of patent term of an invention patent