JP4542039B2 - 透明導電膜付き透明基体とその製造方法、およびこの基体を含む光電変換素子 - Google Patents
透明導電膜付き透明基体とその製造方法、およびこの基体を含む光電変換素子 Download PDFInfo
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- JP4542039B2 JP4542039B2 JP2005515643A JP2005515643A JP4542039B2 JP 4542039 B2 JP4542039 B2 JP 4542039B2 JP 2005515643 A JP2005515643 A JP 2005515643A JP 2005515643 A JP2005515643 A JP 2005515643A JP 4542039 B2 JP4542039 B2 JP 4542039B2
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- UBHZUDXTHNMNLD-UHFFFAOYSA-N dimethylsilane Chemical compound C[SiH2]C UBHZUDXTHNMNLD-UHFFFAOYSA-N 0.000 description 1
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- PSCMQHVBLHHWTO-UHFFFAOYSA-K indium(iii) chloride Chemical compound Cl[In](Cl)Cl PSCMQHVBLHHWTO-UHFFFAOYSA-K 0.000 description 1
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- JCXJVPUVTGWSNB-UHFFFAOYSA-N nitrogen dioxide Inorganic materials O=[N]=O JCXJVPUVTGWSNB-UHFFFAOYSA-N 0.000 description 1
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- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
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- VIPCDVWYAADTGR-UHFFFAOYSA-N trimethyl(methylsilyl)silane Chemical compound C[SiH2][Si](C)(C)C VIPCDVWYAADTGR-UHFFFAOYSA-N 0.000 description 1
- PQDJYEQOELDLCP-UHFFFAOYSA-N trimethylsilane Chemical compound C[SiH](C)C PQDJYEQOELDLCP-UHFFFAOYSA-N 0.000 description 1
- VEDJZFSRVVQBIL-UHFFFAOYSA-N trisilane Chemical compound [SiH3][SiH2][SiH3] VEDJZFSRVVQBIL-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C15/00—Surface treatment of glass, not in the form of fibres or filaments, by etching
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/22—Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02366—Special surface textures of the substrate or of a layer on the substrate, e.g. textured ITO/glass substrate or superstrate, textured polymer layer on glass substrate
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2217/00—Coatings on glass
- C03C2217/70—Properties of coatings
- C03C2217/77—Coatings having a rough surface
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
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- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24942—Structurally defined web or sheet [e.g., overall dimension, etc.] including components having same physical characteristic in differing degree
- Y10T428/2495—Thickness [relative or absolute]
- Y10T428/24967—Absolute thicknesses specified
- Y10T428/24975—No layer or component greater than 5 mils thick
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
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- Y10T428/264—Up to 3 mils
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Description
日本電色工業社製NDH2000を用い、透明導電膜付き透明基体の、透明基体側から光を入射して、ヘイズ率を測定した。
ダイアインスツルメンツ社製MCP−TESTER LORESTA−FPを用いて、シート抵抗を測定した。
理学電機社製RAD−RC装置によって得られた、結晶のX線回折パターンにおける、各配向面の回折ピーク強度と半値幅を掛け合わせて各配向面のピーク面積を求め、(110)面のピーク面積を100として、各配向面の(110)面に対するピーク面積の比率を計算した。
AFM(原子間力顕微鏡;THERMOMICROSCOPE社製走査型プローブ顕微鏡)を用い、ノンコンタクトモードで透明導電膜の表面の凹凸を測定し、凸部の稜線と顕微鏡の試料ステージとのなす角を仰角としてその平均値を求めた。
AFMを用いて測定したデータから、透明導電膜の膜面に垂直な方向から見た平面図を作成し、その平面図に表れた凸部の面積を算出し、その面積と等しい面積を有する円の直径の平均値を算出した。
金属Zn粉末と塩酸とを用いて透明導電膜の所定範囲をエッチングし、段差計(Tencor社製αステップ−500)を用い、形成された段差の高さを測定した。透明導電膜の膜面は、この面に存在する凹凸を平均化した面とした。
オンラインCVD法を利用して、ガラスリボン上に下地膜および透明導電膜(結晶性金属酸化物膜)をこの順で形成した。具体的には、フロートバス内がバス外よりもやや高圧に維持されるように、フロートバス空間内に98体積%の窒素と2体積%の水素とを供給した。フロートバス内を非酸化性雰囲気に保持した状態で、最上流側に位置する第1のコータから、四塩化錫(蒸気)、水蒸気、塩化水素、窒素およびヘリウムからなる混合ガスを供給し、ガラスリボン上に屈折率1.9、厚さ55nmの酸化錫膜(第1下地層)を形成した。引き続き、第2のコータから、モノシラン、エチレン、酸素および窒素からなる混合ガスを供給し、第1下地層の上に屈折率1.46、厚さ30nmの酸化ケイ素膜(第2下地層)を形成した。さらに、第3のコータから、四塩化錫(蒸気)0.90モル%、水蒸気27.06モル%、塩化水素0.05モル%および窒素からなる混合ガスを供給し、第2下地層の上に第1の酸化錫膜を形成した。さらに下流側に設置した第4のコータから、四塩化錫(蒸気)3.05モル%、水蒸気30.49モル%、塩化水素0.15モル%および窒素からなる混合ガスを供給し、第1の酸化錫膜の上に第2の酸化錫膜を形成した。次に、最下流側に位置する第5のコータから、四塩化錫(蒸気)2.92モル%、水蒸気43.78モル%、塩化水素0.58モル%、フッ化水素0.23モル%および窒素からなる混合ガスを供給し、第2の酸化錫膜の上にフッ素がドープされた酸化錫膜を形成して、透明導電膜付き透明基体を得た。透明導電膜の厚さは810nmとした。このようにして得られた透明導電膜付き透明基体のヘイズ率は14.5%、透明導電膜のシート抵抗は14.0Ω/□であった。また、結晶のピーク面積は、(211)面のピーク面積が118であって、他の配向面のピーク面積は、94以下であった。
第3のコータから供給する原料ガスを、四塩化錫(蒸気)1.7モル%、水蒸気58.8モル%、塩化水素0.34モル%および窒素からなる混合ガスとし、第4のコータから供給する原料ガスを、四塩化錫(蒸気)3.2モル%、水蒸気31.9モル%、塩化水素0.16モル%および窒素からなる混合ガスとし、第5のコータから供給する原料ガスを、四塩化錫(蒸気)3.4モル%、水蒸気51.0モル%、塩化水素0.68モル%、フッ化水素1.19モル%および窒素からなる混合ガスとした以外は、実施例3と同様にして透明導電膜付き透明基体を得た。透明導電膜の厚さは960nmとした。このようにして得られた透明導電膜付き透明基体のヘイズ率は25.8%、透明導電膜のシート抵抗は9.0Ω/□であった。また、結晶のピーク面積は、(211)面のピーク面積が153であって、他の配向面のピーク面積は、88以下であった。
Claims (9)
- 透明基体上に金属化合物、酸化原料および塩化水素を含有する原料ガスを供給し、熱分解酸化法によって前記透明基体上に結晶性金属酸化物を主成分とする透明導電膜を形成する工程を含む透明導電膜付き透明基体の製造方法であって、前記工程が、前記原料ガスにおける前記金属化合物に対する前記塩化水素のモル比が0.5〜5である第1工程と、前記モル比が2〜10であって前記第1工程における前記モル比より大きい第2工程とを、この順に含む透明導電膜付き透明基体の製造方法。
- 前記第1工程における前記モル比が1〜5である請求項1に記載の透明導電膜付き透明基体の製造方法。
- 前記第2工程の後に、前記モル比が前記第2工程における前記モル比より小さい第3工程をさらに含む請求項1に記載の透明導電膜付き透明基体の製造方法。
- 前記第3工程における前記モル比が1.5未満である請求項3に記載の透明導電膜付き透明基体の製造方法。
- 前記第1工程における前記モル比が4未満であり、前記第2工程における前記モル比が3以上である請求項1に記載の透明導電膜付き透明基体の製造方法。
- 前記第1工程の前に、前記透明基体の上に少なくとも1層の下地層を形成する工程をさらに含む請求項1に記載の透明導電膜付き透明基体の製造方法。
- 前記第1工程の前に、前記透明基体の上に2層の下地層を形成する工程をさらに含む請求項1に記載の透明導電膜付き透明基体の製造方法。
- 前記透明基体が、フロート法によるガラス製造工程における溶融金属浴上にある表面温度が600℃以上のガラスリボンである請求項1に記載の透明導電膜付き透明基体の製造方法。
- 前記金属化合物が錫化合物であり、前記金属酸化物が酸化錫である請求項1に記載の透明導電膜付き透明基体の製造方法。
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JP2007087866A (ja) * | 2005-09-26 | 2007-04-05 | Fujikura Ltd | 透明導電性基板及びその製造方法並びに光電変換素子 |
CN101618952B (zh) * | 2009-07-30 | 2011-08-17 | 杭州蓝星新材料技术有限公司 | 浮法在线生产透明导电膜玻璃的方法 |
DE102009051345B4 (de) * | 2009-10-30 | 2013-07-25 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren zur Herstellung einer transparenten Elektrode |
US20120255607A1 (en) * | 2009-11-18 | 2012-10-11 | The Trustees Of Princeton University | Semiconductor coated microporous graphene scaffolds |
WO2011114541A1 (ja) * | 2010-03-15 | 2011-09-22 | シャープ株式会社 | 光電変換装置用基板、およびそれを用いた光電変換装置、ならびにそれらの製造方法 |
US8525019B2 (en) * | 2010-07-01 | 2013-09-03 | Primestar Solar, Inc. | Thin film article and method for forming a reduced conductive area in transparent conductive films for photovoltaic modules |
CN102403395A (zh) * | 2010-09-08 | 2012-04-04 | 亚树科技股份有限公司 | 控制导电基板雾度的制作方法 |
JP5404596B2 (ja) * | 2010-12-27 | 2014-02-05 | 株式会社東芝 | 発光素子およびその製造方法 |
KR101202746B1 (ko) * | 2011-04-22 | 2012-11-19 | 삼성코닝정밀소재 주식회사 | 광전지 모듈용 기판 제조방법 |
JP2013041996A (ja) * | 2011-08-16 | 2013-02-28 | Kaneka Corp | 薄膜光電変換装置 |
FR2982608B1 (fr) | 2011-11-16 | 2013-11-22 | Saint Gobain | Couche barriere aux metaux alcalins a base de sioc |
CN103227212A (zh) * | 2012-01-31 | 2013-07-31 | 亚树科技股份有限公司 | 具有高光利用率的薄膜太阳能电池及制造方法 |
JPWO2013118897A1 (ja) * | 2012-02-09 | 2015-05-11 | 旭硝子株式会社 | 透明導電膜形成用ガラス基板、および透明導電膜付き基板 |
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WO2019189109A1 (ja) * | 2018-03-26 | 2019-10-03 | 日本板硝子株式会社 | 薄膜付き基材及びその製造方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10283847A (ja) * | 1997-04-01 | 1998-10-23 | Sharp Corp | 透明導電膜 |
JP2003060217A (ja) * | 2001-08-10 | 2003-02-28 | Nippon Sheet Glass Co Ltd | 導電膜付きガラス板 |
JP2003229584A (ja) * | 2002-01-31 | 2003-08-15 | Nippon Sheet Glass Co Ltd | 光電変換装置用ガラス基板およびそれを用いた光電変換装置 |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US564A (en) * | 1838-01-09 | Samuel rust | ||
US146720A (en) * | 1874-01-20 | Improvement in processes for making statuary and compositions therefor | ||
JPS61288314A (ja) | 1985-06-17 | 1986-12-18 | 三洋電機株式会社 | 透光性導電酸化物層の加工方法 |
JPS61288473A (ja) | 1985-06-17 | 1986-12-18 | Sanyo Electric Co Ltd | 光起電力装置 |
US4732621A (en) | 1985-06-17 | 1988-03-22 | Sanyo Electric Co., Ltd. | Method for producing a transparent conductive oxide layer and a photovoltaic device including such a layer |
JPH051993A (ja) | 1991-06-26 | 1993-01-08 | Ishikawajima Harima Heavy Ind Co Ltd | 帯状繊維物の配向性測定装置 |
JP3132516B2 (ja) | 1991-09-06 | 2001-02-05 | 旭硝子株式会社 | 太陽電池用透明導電性基体およびこれを用いた太陽電池 |
JPH05343716A (ja) * | 1992-06-10 | 1993-12-24 | Sharp Corp | 透明導電体材料 |
JP3338093B2 (ja) * | 1992-11-10 | 2002-10-28 | シャープ株式会社 | 透明導電膜及びその作製方法 |
GB9515198D0 (en) * | 1995-07-25 | 1995-09-20 | Pilkington Plc | A method of coating glass |
US6380480B1 (en) * | 1999-05-18 | 2002-04-30 | Nippon Sheet Glass Co., Ltd | Photoelectric conversion device and substrate for photoelectric conversion device |
JP2001131485A (ja) * | 1999-10-29 | 2001-05-15 | Sumitomo Osaka Cement Co Ltd | 透明導電性膜形成用塗料及び透明導電性膜 |
JP4229606B2 (ja) * | 2000-11-21 | 2009-02-25 | 日本板硝子株式会社 | 光電変換装置用基体およびそれを備えた光電変換装置 |
EP1443527A4 (en) * | 2001-10-19 | 2007-09-12 | Asahi Glass Co Ltd | SUBSTRATE WITH TRANSPARENT CONDUCTIVE OXIDE FILM AND METHOD OF MANUFACTURING THEREOF AND PHOTOELECTRIC IMPLEMENTATION ELEMENT |
WO2003050324A1 (fr) * | 2001-12-03 | 2003-06-19 | Nippon Sheet Glass Company, Limited | Procede de formation d'un film mince, substrat presentant un film mince forme par ce procede, et dispositif de conversion photoelectrique faisant appel a ce substrat |
EP1480276A1 (en) * | 2002-01-31 | 2004-11-24 | Nippon Sheet Glass Co.,Ltd. | Substrate for photoelectric conversion device |
JP4260494B2 (ja) * | 2002-02-26 | 2009-04-30 | 株式会社フジクラ | 透明電極用基材の製法、光電変換素子の製法、及び色素増感太陽電池の製法 |
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Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10283847A (ja) * | 1997-04-01 | 1998-10-23 | Sharp Corp | 透明導電膜 |
JP2003060217A (ja) * | 2001-08-10 | 2003-02-28 | Nippon Sheet Glass Co Ltd | 導電膜付きガラス板 |
JP2003229584A (ja) * | 2002-01-31 | 2003-08-15 | Nippon Sheet Glass Co Ltd | 光電変換装置用ガラス基板およびそれを用いた光電変換装置 |
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