JP4539925B2 - 微小電子機器における銅の電着 - Google Patents

微小電子機器における銅の電着 Download PDF

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Publication number
JP4539925B2
JP4539925B2 JP2006547095A JP2006547095A JP4539925B2 JP 4539925 B2 JP4539925 B2 JP 4539925B2 JP 2006547095 A JP2006547095 A JP 2006547095A JP 2006547095 A JP2006547095 A JP 2006547095A JP 4539925 B2 JP4539925 B2 JP 4539925B2
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Prior art keywords
vinylpyridine
polymer compound
substituted pyridyl
seconds
group
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Expired - Lifetime
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JP2006547095A
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English (en)
Japanese (ja)
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JP2007517140A (ja
JP2007517140A5 (https=
Inventor
パネッカシオ,ビンセント
リン,シュワン
フィグラ,ポール
ハートビーズ,リチャード
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エントン インコーポレイテッド
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Publication of JP2007517140A5 publication Critical patent/JP2007517140A5/ja
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    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00Electroplating characterised by the article coated
    • C25D7/12Semiconductors
    • C25D7/123Semiconductors first coated with a seed layer or a conductive layer
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/001Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00Electroplating: Baths therefor
    • C25D3/02Electroplating: Baths therefor from solutions
    • C25D3/38Electroplating: Baths therefor from solutions of copper
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/46Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a liquid
    • H10P14/47Electrolytic deposition, i.e. electroplating; Electroless plating
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00Interconnections in chips, wafers or substrates
    • H10W20/01Manufacture or treatment
    • H10W20/031Manufacture or treatment of conductive parts of the interconnections
    • H10W20/056Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00Interconnections in chips, wafers or substrates
    • H10W20/01Manufacture or treatment
    • H10W20/031Manufacture or treatment of conductive parts of the interconnections
    • H10W20/056Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches
    • H10W20/057Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches by selectively depositing, e.g. by using selective CVD or plating

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Electroplating And Plating Baths Therefor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Electrolytic Production Of Metals (AREA)
JP2006547095A 2003-12-22 2004-12-13 微小電子機器における銅の電着 Expired - Lifetime JP4539925B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US53177103P 2003-12-22 2003-12-22
US10/963,369 US8002962B2 (en) 2002-03-05 2004-10-12 Copper electrodeposition in microelectronics
PCT/US2004/041620 WO2005066391A1 (en) 2003-12-22 2004-12-13 Copper electrodeposition in microelectronics

Publications (3)

Publication Number Publication Date
JP2007517140A JP2007517140A (ja) 2007-06-28
JP2007517140A5 JP2007517140A5 (https=) 2008-02-07
JP4539925B2 true JP4539925B2 (ja) 2010-09-08

Family

ID=34752972

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006547095A Expired - Lifetime JP4539925B2 (ja) 2003-12-22 2004-12-13 微小電子機器における銅の電着

Country Status (7)

Country Link
US (4) US8002962B2 (https=)
EP (1) EP1697561B1 (https=)
JP (1) JP4539925B2 (https=)
KR (1) KR101157284B1 (https=)
PT (1) PT1697561T (https=)
TW (1) TWI266383B (https=)
WO (1) WO2005066391A1 (https=)

Families Citing this family (54)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8002962B2 (en) * 2002-03-05 2011-08-23 Enthone Inc. Copper electrodeposition in microelectronics
TWI400365B (zh) * 2004-11-12 2013-07-01 安頌股份有限公司 微電子裝置上的銅電沈積
JP4665531B2 (ja) * 2005-01-27 2011-04-06 日立電線株式会社 配線板の製造方法
JP4468191B2 (ja) * 2005-01-27 2010-05-26 株式会社日立製作所 金属構造体及びその製造方法
DE102005011708B3 (de) * 2005-03-11 2007-03-01 Atotech Deutschland Gmbh Polyvinylammoniumverbindung und Verfahren zu deren Herstellung sowie diese Verbindung enthaltende saure Lösung und Verfahren zum elektrolytischen Abscheiden eines Kupferniederschlages
US20060243599A1 (en) * 2005-04-28 2006-11-02 Taiwan Semiconductor Manufacturing Company, Ltd. Electroplating additive for improved reliability
TWI328622B (en) * 2005-09-30 2010-08-11 Rohm & Haas Elect Mat Leveler compounds
US20070075042A1 (en) * 2005-10-05 2007-04-05 Siddiqui Junaid A Stabilizer-Fenton's reaction metal-vinyl pyridine polymer-surface-modified chemical mechanical planarization composition and associated method
JP4816901B2 (ja) * 2005-11-21 2011-11-16 上村工業株式会社 電気銅めっき浴
US20070178697A1 (en) * 2006-02-02 2007-08-02 Enthone Inc. Copper electrodeposition in microelectronics
WO2008029376A2 (en) * 2006-09-07 2008-03-13 Enthone Inc. Deposition of conductive polymer and metallization of non-conductive substrates
WO2008142770A1 (ja) 2007-05-21 2008-11-27 C. Uyemura & Co., Ltd. 電気銅めっき浴
TWI341554B (en) * 2007-08-02 2011-05-01 Enthone Copper metallization of through silicon via
US7905994B2 (en) * 2007-10-03 2011-03-15 Moses Lake Industries, Inc. Substrate holder and electroplating system
US20090188553A1 (en) * 2008-01-25 2009-07-30 Emat Technology, Llc Methods of fabricating solar-cell structures and resulting solar-cell structures
GB2457691A (en) * 2008-02-21 2009-08-26 Sharp Kk Display with regions simultaneously operable in different viewing modes
US8388824B2 (en) * 2008-11-26 2013-03-05 Enthone Inc. Method and composition for electrodeposition of copper in microelectronics with dipyridyl-based levelers
WO2011149965A2 (en) 2010-05-24 2011-12-01 Enthone Inc. Copper filling of through silicon vias
ES2461493T3 (es) * 2009-01-30 2014-05-20 Praxair S.T. Technology, Inc. Objetivo tubular
US8058126B2 (en) * 2009-02-04 2011-11-15 Micron Technology, Inc. Semiconductor devices and structures including at least partially formed container capacitors and methods of forming the same
US8262894B2 (en) 2009-04-30 2012-09-11 Moses Lake Industries, Inc. High speed copper plating bath
EP2504396B1 (en) * 2009-11-27 2021-02-24 Basf Se Composition for copper electroplating comprising leveling agent
EP2392692A1 (en) 2010-06-01 2011-12-07 Basf Se Composition for metal electroplating comprising leveling agent
SG185736A1 (en) 2010-06-01 2012-12-28 Basf Se Composition for metal electroplating comprising leveling agent
CN102939408B (zh) * 2010-06-11 2015-12-02 埃其玛公司 铜电镀组合物和使用该组合物填充半导体衬底中的空腔的方法
US9523155B2 (en) 2012-12-12 2016-12-20 Novellus Systems, Inc. Enhancement of electrolyte hydrodynamics for efficient mass transfer during electroplating
US8795480B2 (en) * 2010-07-02 2014-08-05 Novellus Systems, Inc. Control of electrolyte hydrodynamics for efficient mass transfer during electroplating
US10233556B2 (en) 2010-07-02 2019-03-19 Lam Research Corporation Dynamic modulation of cross flow manifold during electroplating
US10094034B2 (en) 2015-08-28 2018-10-09 Lam Research Corporation Edge flow element for electroplating apparatus
US9624592B2 (en) 2010-07-02 2017-04-18 Novellus Systems, Inc. Cross flow manifold for electroplating apparatus
KR101705734B1 (ko) * 2011-02-18 2017-02-14 삼성전자주식회사 구리 도금 용액 및 이것을 이용한 구리 도금 방법
US9184144B2 (en) * 2011-07-21 2015-11-10 Qualcomm Incorporated Interconnect pillars with directed compliance geometry
US8454815B2 (en) 2011-10-24 2013-06-04 Rohm And Haas Electronics Materials Llc Plating bath and method
FR2995912B1 (fr) * 2012-09-24 2014-10-10 Alchimer Electrolyte et procede d'electrodeposition de cuivre sur une couche barriere
AU2013321051B9 (en) * 2012-09-28 2017-03-30 Nikon-Essilor Co., Ltd. Optical component and method of manufacturing the same
CN103060860B (zh) * 2013-01-22 2016-01-20 中南大学 一种印制线路板酸性镀铜电镀液及其制备和应用方法
CN103103587B (zh) * 2013-02-22 2016-02-17 陕西师范大学 含巯基杂环化合物的电镀铜溶液
US9449808B2 (en) 2013-05-29 2016-09-20 Novellus Systems, Inc. Apparatus for advanced packaging applications
JP2017503929A (ja) 2013-11-25 2017-02-02 エンソン インコーポレイテッド 銅の電析
TWI710671B (zh) 2014-09-15 2020-11-21 美商麥德美樂思公司 微電子技術中銅沈積用之平整劑
CN104764777A (zh) * 2015-03-31 2015-07-08 深圳崇达多层线路板有限公司 一种电镀填孔工艺用的电镀液的检测方法
US10364505B2 (en) 2016-05-24 2019-07-30 Lam Research Corporation Dynamic modulation of cross flow manifold during elecroplating
JP7123942B2 (ja) 2016-09-22 2022-08-23 マクダーミッド エンソン インコーポレイテッド 集積回路のウェハレベルパッケージングにおける銅堆積
JP7039601B2 (ja) 2016-09-22 2022-03-22 マクダーミッド エンソン インコーポレイテッド マイクロエレクトロニクスにおける銅電着
EP3360988B1 (en) * 2017-02-09 2019-06-26 ATOTECH Deutschland GmbH Pyridinium compounds, a synthesis method therefor, metal or metal alloy plating baths containing said pyridinium compounds and a method for use of said metal or metal alloy plating baths
US11001934B2 (en) 2017-08-21 2021-05-11 Lam Research Corporation Methods and apparatus for flow isolation and focusing during electroplating
US10781527B2 (en) 2017-09-18 2020-09-22 Lam Research Corporation Methods and apparatus for controlling delivery of cross flowing and impinging electrolyte during electroplating
KR102445636B1 (ko) 2017-11-28 2022-09-22 솔브레인 주식회사 평탄화제 및 이를 포함하는 구리 도금 조성물
JP6899062B1 (ja) * 2020-05-18 2021-07-07 深▲せん▼市創智成功科技有限公司 Icボードのスルーホールを充填するための電気銅めっき液およびその電気めっき方法
CN114016094B (zh) * 2021-09-29 2022-11-18 深圳市励高表面处理材料有限公司 一种整平剂及其制备方法
KR20230112884A (ko) * 2022-01-21 2023-07-28 동우 화인켐 주식회사 구리 도금용 조성물 및 이를 이용한 구리 함유 도전체의 제조 방법
CN117659393A (zh) * 2022-08-31 2024-03-08 华为技术有限公司 一种整平剂、组合物及其应用
EP4587620A1 (en) * 2022-10-10 2025-07-23 MacDermid Enthone Inc. Composition and method for nanotwinned copper formation
CN116515021B (zh) * 2023-05-19 2025-01-07 广东省科学院化工研究所 一种聚甲基丙烯酸(n,n-二烷基氨基乙酯)季铵盐及其制备方法和应用

Family Cites Families (60)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1248415B (de) 1964-03-07 1967-08-24 Dehydag Gmbh Saure galvanische Kupferbaeder
SE322956B (https=) 1966-08-20 1970-04-20 Schering Ag
GB1202497A (en) * 1968-07-18 1970-08-19 Midland Yorkshire Tar Distille Preparation of quaternary vinyl pyridine salts and polymers thereof
ZA708430B (en) 1970-02-12 1971-09-29 Udylite Corp Electrodeposition of copper from acidic baths
US3770598A (en) 1972-01-21 1973-11-06 Oxy Metal Finishing Corp Electrodeposition of copper from acid baths
US4212764A (en) 1972-07-03 1980-07-15 Petrolite Corporation Quaternary polyvinyl heterocyclic compositions and use as corrosion inhibitors
US3940320A (en) 1972-12-14 1976-02-24 M & T Chemicals Inc. Electrodeposition of copper
US3956078A (en) 1972-12-14 1976-05-11 M & T Chemicals Inc. Electrodeposition of copper
DE2360892A1 (de) 1972-12-14 1974-06-20 M & T Chemicals Inc Waessriges saures galvanisches kupferbad
US4036710A (en) * 1974-11-21 1977-07-19 M & T Chemicals Inc. Electrodeposition of copper
US4009087A (en) 1974-11-21 1977-02-22 M&T Chemicals Inc. Electrodeposition of copper
AU496780B2 (en) 1975-03-11 1978-10-26 Oxy Metal Industries Corporation Additives in baths forthe electrodeposition of copper
JPS527819A (en) 1975-07-10 1977-01-21 Furukawa Electric Co Ltd:The Process for smooth electrodeposition of copper
US4024328A (en) * 1975-10-01 1977-05-17 The Dow Chemical Company Method for alkylating aminomethylacrylamide polymers
US4038161A (en) * 1976-03-05 1977-07-26 R. O. Hull & Company, Inc. Acid copper plating and additive composition therefor
DE2610705C3 (de) 1976-03-13 1978-10-19 Henkel Kgaa, 4000 Duesseldorf Saure galvanische Kupferbäder
US4170526A (en) * 1978-01-16 1979-10-09 Oxy Metal Industries Corporation Electroplating bath and process
US4350183A (en) 1980-05-19 1982-09-21 Raychem Corporation Heat-recoverable pipeline termination plug
SU980412A1 (ru) * 1980-12-04 1987-02-15 Институт Теоретических Проблем Химической Технологии Ан Азсср Способ получени комплексообразующего ионита
JPS57114685A (en) * 1981-01-07 1982-07-16 Kuraray Co Ltd Brightener for plating bath
US4336114A (en) 1981-03-26 1982-06-22 Hooker Chemicals & Plastics Corp. Electrodeposition of bright copper
US4376685A (en) 1981-06-24 1983-03-15 M&T Chemicals Inc. Acid copper electroplating baths containing brightening and leveling additives
US4555315A (en) 1984-05-29 1985-11-26 Omi International Corporation High speed copper electroplating process and bath therefor
US5232575A (en) 1990-07-26 1993-08-03 Mcgean-Rohco, Inc. Polymeric leveling additive for acid electroplating baths
JP3165484B2 (ja) 1991-10-29 2001-05-14 京セラ株式会社 液量センサ
JPH06141787A (ja) 1992-11-05 1994-05-24 Ajinomoto Co Inc 低吸油油ちょう食品
US5824756A (en) * 1994-10-25 1998-10-20 Reilly Industries, Inc. H2 O2 -catalyzed polymerizations for linear polyvinylpyridines
DE19653681C2 (de) 1996-12-13 2000-04-06 Atotech Deutschland Gmbh Verfahren zur elektrolytischen Abscheidung von Kupferschichten mit gleichmäßiger Schichtdicke und guten optischen und metallphysikalischen Eigenschaften und Anwendung des Verfahrens
WO1998027585A1 (en) 1996-12-16 1998-06-25 International Business Machines Corporation Electroplated interconnection structures on integrated circuit chips
US5972192A (en) 1997-07-23 1999-10-26 Advanced Micro Devices, Inc. Pulse electroplating copper or copper alloys
DE19758121C2 (de) 1997-12-17 2000-04-06 Atotech Deutschland Gmbh Wäßriges Bad und Verfahren zum elektrolytischen Abscheiden von Kupferschichten
EP1126512A4 (en) 1998-08-11 2007-10-17 Ebara Corp DEPOSIT METHOD AND APPARATUS FOR SEMICONDUCTED DISCS
JP2000080494A (ja) 1998-09-03 2000-03-21 Ebara Corp 銅ダマシン配線用めっき液
WO2000014306A1 (fr) 1998-09-03 2000-03-16 Ebara Corporation Procede et dispositif de revetement de substrat
US6793796B2 (en) 1998-10-26 2004-09-21 Novellus Systems, Inc. Electroplating process for avoiding defects in metal features of integrated circuit devices
US6123825A (en) 1998-12-02 2000-09-26 International Business Machines Corporation Electromigration-resistant copper microstructure and process of making
JP2000297395A (ja) 1999-04-15 2000-10-24 Japan Energy Corp 電気銅めっき液
US6444110B2 (en) 1999-05-17 2002-09-03 Shipley Company, L.L.C. Electrolytic copper plating method
US20060183328A1 (en) 1999-05-17 2006-08-17 Barstad Leon R Electrolytic copper plating solutions
JP2001073182A (ja) * 1999-07-15 2001-03-21 Boc Group Inc:The 改良された酸性銅電気メッキ用溶液
US6224737B1 (en) 1999-08-19 2001-05-01 Taiwan Semiconductor Manufacturing Company Method for improvement of gap filling capability of electrochemical deposition of copper
US6673216B2 (en) 1999-08-31 2004-01-06 Semitool, Inc. Apparatus for providing electrical and fluid communication to a rotating microelectronic workpiece during electrochemical processing
JP4394234B2 (ja) 2000-01-20 2010-01-06 日鉱金属株式会社 銅電気めっき液及び銅電気めっき方法
JP2002004081A (ja) 2000-06-16 2002-01-09 Learonal Japan Inc シリコンウエハーへの電気めっき方法
US6682642B2 (en) 2000-10-13 2004-01-27 Shipley Company, L.L.C. Seed repair and electroplating bath
US6649038B2 (en) 2000-10-13 2003-11-18 Shipley Company, L.L.C. Electroplating method
US6679983B2 (en) 2000-10-13 2004-01-20 Shipley Company, L.L.C. Method of electrodepositing copper
US6660153B2 (en) 2000-10-20 2003-12-09 Shipley Company, L.L.C. Seed layer repair bath
US20020090484A1 (en) 2000-10-20 2002-07-11 Shipley Company, L.L.C. Plating bath
US6797146B2 (en) 2000-11-02 2004-09-28 Shipley Company, L.L.C. Seed layer repair
EP1203950B1 (en) 2000-11-02 2005-09-07 Shipley Company LLC Plating bath analysis
US20020127847A1 (en) 2000-11-03 2002-09-12 Shipley Company, L.L.C. Electrochemical co-deposition of metals for electronic device manufacture
DE10100954A1 (de) * 2001-01-11 2002-07-18 Raschig Gmbh Verwendung von Polyolefinen mit basischen, aromatischen Substituenten als Hilfsmittel zur elektrolytischen Abscheidung von metallischen Schichten
JP2003105584A (ja) 2001-07-26 2003-04-09 Electroplating Eng Of Japan Co 微細配線埋め込み用銅メッキ液及びそれを用いた銅メッキ方法
US7316772B2 (en) 2002-03-05 2008-01-08 Enthone Inc. Defect reduction in electrodeposited copper for semiconductor applications
US8002962B2 (en) * 2002-03-05 2011-08-23 Enthone Inc. Copper electrodeposition in microelectronics
US20050072683A1 (en) 2003-04-03 2005-04-07 Ebara Corporation Copper plating bath and plating method
JP2005126803A (ja) * 2003-10-27 2005-05-19 Ebara Corp めっき方法
JP2005029818A (ja) 2003-07-09 2005-02-03 Ebara Corp めっき方法
TWI328622B (en) 2005-09-30 2010-08-11 Rohm & Haas Elect Mat Leveler compounds

Also Published As

Publication number Publication date
EP1697561B1 (en) 2018-07-18
EP1697561A4 (en) 2008-05-21
US20120043218A1 (en) 2012-02-23
TW200525695A (en) 2005-08-01
US20140102909A1 (en) 2014-04-17
US8608933B2 (en) 2013-12-17
EP1697561A1 (en) 2006-09-06
PT1697561T (pt) 2018-10-19
JP2007517140A (ja) 2007-06-28
US20050045488A1 (en) 2005-03-03
WO2005066391A1 (en) 2005-07-21
US20170029972A1 (en) 2017-02-02
TWI266383B (en) 2006-11-11
US9493884B2 (en) 2016-11-15
KR101157284B1 (ko) 2012-07-06
KR20060127067A (ko) 2006-12-11
US8002962B2 (en) 2011-08-23

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