JP4536187B2 - 半導体装置およびその作製方法 - Google Patents

半導体装置およびその作製方法 Download PDF

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Publication number
JP4536187B2
JP4536187B2 JP32750999A JP32750999A JP4536187B2 JP 4536187 B2 JP4536187 B2 JP 4536187B2 JP 32750999 A JP32750999 A JP 32750999A JP 32750999 A JP32750999 A JP 32750999A JP 4536187 B2 JP4536187 B2 JP 4536187B2
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Japan
Prior art keywords
gate electrode
insulating film
gate
semiconductor layer
gate insulating
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Expired - Fee Related
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JP32750999A
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English (en)
Japanese (ja)
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JP2000216399A (ja
JP2000216399A5 (enrdf_load_stackoverflow
Inventor
節男 中嶋
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP32750999A priority Critical patent/JP4536187B2/ja
Publication of JP2000216399A publication Critical patent/JP2000216399A/ja
Publication of JP2000216399A5 publication Critical patent/JP2000216399A5/ja
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Publication of JP4536187B2 publication Critical patent/JP4536187B2/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0231—Manufacture or treatment of multiple TFTs using masks, e.g. half-tone masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

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  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
JP32750999A 1998-11-17 1999-11-17 半導体装置およびその作製方法 Expired - Fee Related JP4536187B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP32750999A JP4536187B2 (ja) 1998-11-17 1999-11-17 半導体装置およびその作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP10-327356 1998-11-17
JP32735698 1998-11-17
JP32750999A JP4536187B2 (ja) 1998-11-17 1999-11-17 半導体装置およびその作製方法

Publications (3)

Publication Number Publication Date
JP2000216399A JP2000216399A (ja) 2000-08-04
JP2000216399A5 JP2000216399A5 (enrdf_load_stackoverflow) 2007-04-26
JP4536187B2 true JP4536187B2 (ja) 2010-09-01

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP32750999A Expired - Fee Related JP4536187B2 (ja) 1998-11-17 1999-11-17 半導体装置およびその作製方法

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JP (1) JP4536187B2 (enrdf_load_stackoverflow)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7030551B2 (en) 2000-08-10 2006-04-18 Semiconductor Energy Laboratory Co., Ltd. Area sensor and display apparatus provided with an area sensor
JP4954401B2 (ja) * 2000-08-11 2012-06-13 株式会社半導体エネルギー研究所 半導体装置の製造方法
US7223643B2 (en) 2000-08-11 2007-05-29 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
JP2012089878A (ja) * 2000-08-25 2012-05-10 Semiconductor Energy Lab Co Ltd 発光装置
US6924594B2 (en) * 2000-10-03 2005-08-02 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
JP5046452B2 (ja) * 2000-10-26 2012-10-10 株式会社半導体エネルギー研究所 半導体装置の作製方法
TW525216B (en) 2000-12-11 2003-03-21 Semiconductor Energy Lab Semiconductor device, and manufacturing method thereof
SG103846A1 (en) * 2001-02-28 2004-05-26 Semiconductor Energy Lab A method of manufacturing a semiconductor device
JP4831885B2 (ja) 2001-04-27 2011-12-07 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4683817B2 (ja) * 2002-09-27 2011-05-18 株式会社半導体エネルギー研究所 半導体装置の作製方法
CN100345310C (zh) * 2004-04-26 2007-10-24 统宝光电股份有限公司 薄膜晶体管及其制作方法
JP4876548B2 (ja) 2005-11-22 2012-02-15 セイコーエプソン株式会社 電気光学装置の製造方法
JP2015122538A (ja) * 2015-03-09 2015-07-02 株式会社半導体エネルギー研究所 半導体装置
CN107533981B (zh) * 2015-04-28 2020-12-15 夏普株式会社 半导体装置以及其制造方法
JP2016021587A (ja) * 2015-09-08 2016-02-04 株式会社半導体エネルギー研究所 半導体装置
JP2017037340A (ja) * 2016-10-26 2017-02-16 株式会社半導体エネルギー研究所 半導体装置
WO2020188643A1 (ja) * 2019-03-15 2020-09-24 シャープ株式会社 表示装置
CN115206994A (zh) * 2021-04-09 2022-10-18 株式会社日本显示器 显示装置
KR20240032525A (ko) 2022-09-02 2024-03-12 엘지디스플레이 주식회사 박막 트랜지스터 및 이를 갖는 전계 발광 표시 장치

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3173135B2 (ja) * 1992-06-24 2001-06-04 セイコーエプソン株式会社 薄膜半導体装置及びその製造方法
JP2551724B2 (ja) * 1993-03-04 1996-11-06 株式会社高度映像技術研究所 薄膜半導体装置およびその製造方法
JP3762002B2 (ja) * 1996-11-29 2006-03-29 株式会社東芝 薄膜トランジスタ、及び液晶表示装置
GB9806609D0 (en) * 1998-03-28 1998-05-27 Philips Electronics Nv Electronic devices comprising thin-film transistors
JP4641581B2 (ja) * 1998-11-10 2011-03-02 株式会社半導体エネルギー研究所 半導体装置およびその作製方法

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JP2000216399A (ja) 2000-08-04

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