JP4509228B2 - 有機材料から成る電界効果トランジスタ及びその製造方法 - Google Patents
有機材料から成る電界効果トランジスタ及びその製造方法 Download PDFInfo
- Publication number
- JP4509228B2 JP4509228B2 JP51409999A JP51409999A JP4509228B2 JP 4509228 B2 JP4509228 B2 JP 4509228B2 JP 51409999 A JP51409999 A JP 51409999A JP 51409999 A JP51409999 A JP 51409999A JP 4509228 B2 JP4509228 B2 JP 4509228B2
- Authority
- JP
- Japan
- Prior art keywords
- organic
- layer
- field effect
- effect transistor
- electrically insulating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
- H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/464—Lateral top-gate IGFETs comprising only a single gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Thin Film Transistor (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP97202587.8 | 1997-08-22 | ||
| EP97202587 | 1997-08-22 | ||
| PCT/IB1998/001144 WO1999010939A2 (en) | 1997-08-22 | 1998-07-27 | A method of manufacturing a field-effect transistor substantially consisting of organic materials |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2001505002A JP2001505002A (ja) | 2001-04-10 |
| JP2001505002A5 JP2001505002A5 (enExample) | 2006-01-05 |
| JP4509228B2 true JP4509228B2 (ja) | 2010-07-21 |
Family
ID=8228663
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP51409999A Expired - Fee Related JP4509228B2 (ja) | 1997-08-22 | 1998-07-27 | 有機材料から成る電界効果トランジスタ及びその製造方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (2) | US6429450B1 (enExample) |
| EP (1) | EP0968537B1 (enExample) |
| JP (1) | JP4509228B2 (enExample) |
| WO (1) | WO1999010939A2 (enExample) |
Families Citing this family (125)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6839158B2 (en) | 1997-08-28 | 2005-01-04 | E Ink Corporation | Encapsulated electrophoretic displays having a monolayer of capsules and materials and methods for making the same |
| RU2183882C2 (ru) * | 1998-01-28 | 2002-06-20 | Тин Филм Электроникс Аса | Способ формирования электропроводящих или полупроводниковых трехмерных структур и способы уничтожения этих структур |
| US6842657B1 (en) | 1999-04-09 | 2005-01-11 | E Ink Corporation | Reactive formation of dielectric layers and protection of organic layers in organic semiconductor device fabrication |
| IL145317A0 (en) * | 1999-04-28 | 2002-06-30 | Du Pont | Flexible organic electronic device with improved resistance to oxygen and moisture degradation |
| JP5167569B2 (ja) * | 1999-06-21 | 2013-03-21 | ケンブリッジ・エンタープライズ・リミテッド | トランジスタの製造方法 |
| GB9914489D0 (en) * | 1999-06-21 | 1999-08-25 | Univ Cambridge Tech | Transistors |
| WO2001017029A1 (en) | 1999-08-31 | 2001-03-08 | E Ink Corporation | Transistor for an electronically driven display |
| JP4972260B2 (ja) * | 1999-08-31 | 2012-07-11 | イー インク コーポレイション | パターニングされた半導体膜を形成する方法 |
| DE60033012T2 (de) | 1999-09-10 | 2007-09-13 | Koninklijke Philips Electronics N.V. | Leitende struktur basierend auf poly-3,4-alkendioxythiophen (pedot) und polystyrolsulfonsäure (pss) |
| EP1085320A1 (en) * | 1999-09-13 | 2001-03-21 | Interuniversitair Micro-Elektronica Centrum Vzw | A device for detecting an analyte in a sample based on organic materials |
| JP4587539B2 (ja) * | 1999-09-13 | 2010-11-24 | アイメック | 有機材料に基づいてサンプル中の被分析物を検出するための装置 |
| EP1085319B1 (en) * | 1999-09-13 | 2005-06-01 | Interuniversitair Micro-Elektronica Centrum Vzw | A device for detecting an analyte in a sample based on organic materials |
| JP2004538618A (ja) | 1999-10-11 | 2004-12-24 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 集積回路 |
| JP2003518754A (ja) * | 1999-12-21 | 2003-06-10 | プラスティック ロジック リミテッド | 溶液処理された素子 |
| GB9930217D0 (en) * | 1999-12-21 | 2000-02-09 | Univ Cambridge Tech | Solutiion processed transistors |
| WO2001047044A2 (en) | 1999-12-21 | 2001-06-28 | Plastic Logic Limited | Forming interconnects |
| CN1245769C (zh) * | 1999-12-21 | 2006-03-15 | 造型逻辑有限公司 | 溶液加工 |
| DE10037391A1 (de) | 2000-08-01 | 2002-02-14 | Covion Organic Semiconductors | Strukturierbare Materialien, Verfahren zu deren Herstellung und deren Verwendung |
| EP1309994A2 (de) * | 2000-08-18 | 2003-05-14 | Siemens Aktiengesellschaft | Verkapseltes organisch-elektronisches bauteil, verfahren zu seiner herstellung und seine verwendung |
| WO2002015293A2 (de) * | 2000-08-18 | 2002-02-21 | Siemens Aktiengesellschaft | Organischer feldeffekt-transistor (ofet), herstellungsverfahren dazu und daraus gebaute integrierte schaltung sowie verwendungen |
| DE10057502A1 (de) * | 2000-11-20 | 2002-05-29 | Siemens Ag | Organischer Feld-Effekt-Transistor |
| DE10043204A1 (de) * | 2000-09-01 | 2002-04-04 | Siemens Ag | Organischer Feld-Effekt-Transistor, Verfahren zur Strukturierung eines OFETs und integrierte Schaltung |
| DE10044842A1 (de) * | 2000-09-11 | 2002-04-04 | Siemens Ag | Organischer Gleichrichter, Schaltung, RFID-Tag und Verwendung eines organischen Gleichrichters |
| DE10045192A1 (de) | 2000-09-13 | 2002-04-04 | Siemens Ag | Organischer Datenspeicher, RFID-Tag mit organischem Datenspeicher, Verwendung eines organischen Datenspeichers |
| US20040026121A1 (en) * | 2000-09-22 | 2004-02-12 | Adolf Bernds | Electrode and/or conductor track for organic components and production method thereof |
| DE10061299A1 (de) | 2000-12-08 | 2002-06-27 | Siemens Ag | Vorrichtung zur Feststellung und/oder Weiterleitung zumindest eines Umwelteinflusses, Herstellungsverfahren und Verwendung dazu |
| DE10061297C2 (de) * | 2000-12-08 | 2003-05-28 | Siemens Ag | Verfahren zur Sturkturierung eines OFETs |
| DE10063721A1 (de) * | 2000-12-20 | 2002-07-11 | Merck Patent Gmbh | Organischer Halbleiter, Herstellungsverfahren dazu und Verwendungen |
| GB2371910A (en) | 2001-01-31 | 2002-08-07 | Seiko Epson Corp | Display devices |
| DE10105914C1 (de) | 2001-02-09 | 2002-10-10 | Siemens Ag | Organischer Feldeffekt-Transistor mit fotostrukturiertem Gate-Dielektrikum und ein Verfahren zu dessen Erzeugung |
| US7439096B2 (en) * | 2001-02-21 | 2008-10-21 | Lucent Technologies Inc. | Semiconductor device encapsulation |
| US7012306B2 (en) | 2001-03-07 | 2006-03-14 | Acreo Ab | Electrochemical device |
| SE520339C2 (sv) | 2001-03-07 | 2003-06-24 | Acreo Ab | Elektrokemisk transistoranordning och dess tillverkningsförfarande |
| EP1373976B1 (en) | 2001-03-07 | 2008-04-23 | Acreo AB | Electrochemical pixel device |
| US6707063B2 (en) * | 2001-03-22 | 2004-03-16 | Hewlett-Packard Development Company, L.P. | Passivation layer for molecular electronic device fabrication |
| JP2005509200A (ja) * | 2001-03-26 | 2005-04-07 | シーメンス アクチエンゲゼルシヤフト | 少なくとも2つの有機電子構成エレメントを有する装置、および該装置のための製造方法 |
| DE10120520A1 (de) * | 2001-04-26 | 2002-11-14 | Infineon Technologies Ag | Halbleiterbauelement und Herstellungsverfahren |
| EP1393389B1 (en) | 2001-05-23 | 2018-12-05 | Flexenable Limited | Laser patterning of devices |
| KR100961251B1 (ko) * | 2001-10-01 | 2010-06-03 | 코닌클리케 필립스 일렉트로닉스 엔.브이. | 조성물, 전자 디바이스 및 전자 디바이스의 제조 방법 |
| DE10151036A1 (de) | 2001-10-16 | 2003-05-08 | Siemens Ag | Isolator für ein organisches Elektronikbauteil |
| DE10151440C1 (de) | 2001-10-18 | 2003-02-06 | Siemens Ag | Organisches Elektronikbauteil, Verfahren zu seiner Herstellung und seine Verwendung |
| JP4149168B2 (ja) | 2001-11-09 | 2008-09-10 | 株式会社半導体エネルギー研究所 | 発光装置 |
| DE10160732A1 (de) | 2001-12-11 | 2003-06-26 | Siemens Ag | Organischer Feld-Effekt-Transistor mit verschobener Schwellwertspannung und Verwendung dazu |
| US6620657B2 (en) * | 2002-01-15 | 2003-09-16 | International Business Machines Corporation | Method of forming a planar polymer transistor using substrate bonding techniques |
| US7695875B2 (en) | 2002-02-05 | 2010-04-13 | Koninklijke Philips Electronics | Photo-sensitive composition |
| US7158277B2 (en) | 2002-03-07 | 2007-01-02 | Acreo Ab | Electrochemical device |
| ATE544092T1 (de) * | 2002-03-07 | 2012-02-15 | Acreo Ab | Elektrochemische vorrichtung |
| DE10212639A1 (de) * | 2002-03-21 | 2003-10-16 | Siemens Ag | Vorrichtung und Verfahren zur Laserstrukturierung von Funktionspolymeren und Verwendungen |
| DE10212640B4 (de) | 2002-03-21 | 2004-02-05 | Siemens Ag | Logische Bauteile aus organischen Feldeffekttransistoren |
| DE10226370B4 (de) * | 2002-06-13 | 2008-12-11 | Polyic Gmbh & Co. Kg | Substrat für ein elektronisches Bauteil, Verwendung des Substrates, Verfahren zur Erhöhung der Ladungsträgermobilität und Organischer Feld-Effekt Transistor (OFET) |
| WO2004017439A2 (de) * | 2002-07-29 | 2004-02-26 | Siemens Aktiengesellschaft | Elektronisches bauteil mit vorwiegend organischen funktionsmaterialien und herstellungsverfahren dazu |
| US20060079327A1 (en) * | 2002-08-08 | 2006-04-13 | Wolfgang Clemens | Electronic device |
| US6784017B2 (en) * | 2002-08-12 | 2004-08-31 | Precision Dynamics Corporation | Method of creating a high performance organic semiconductor device |
| JP2004140333A (ja) * | 2002-08-22 | 2004-05-13 | Yamanashi Tlo:Kk | 有機電界効果トランジスタおよびその製造方法 |
| ATE355566T1 (de) | 2002-08-23 | 2006-03-15 | Polyic Gmbh & Co Kg | Organisches bauelement zum überspannungsschutz und dazugehörige schaltung |
| EP1416004A1 (en) * | 2002-11-02 | 2004-05-06 | MERCK PATENT GmbH | Polymerizable amine mixtures, amine polymer materials and their use |
| US20040094761A1 (en) * | 2002-11-02 | 2004-05-20 | David Sparrowe | Polymerizable amine mixtures, amine polymer materials and their use |
| CN1726604A (zh) * | 2002-11-05 | 2006-01-25 | 波尔伊克两合公司 | 具有高分辨率结构的有机电子元件及其制造方法 |
| DE10253154A1 (de) | 2002-11-14 | 2004-05-27 | Siemens Ag | Messgerät zur Bestimmung eines Analyten in einer Flüssigkeitsprobe |
| WO2004047194A2 (de) * | 2002-11-19 | 2004-06-03 | Polyic Gmbh & Co.Kg | Organisches elektronisches bauelement mit gleichem organischem material für zumindest zwei funktionsschichten |
| ATE354182T1 (de) | 2002-11-19 | 2007-03-15 | Polyic Gmbh & Co Kg | Organische elektronische schaltung mit stukturierter halbleitender funktionsschicht und herstellungsverfahren dazu |
| GB0229191D0 (en) | 2002-12-14 | 2003-01-22 | Plastic Logic Ltd | Embossing of polymer devices |
| US7078261B2 (en) * | 2002-12-16 | 2006-07-18 | The Regents Of The University Of California | Increased mobility from organic semiconducting polymers field-effect transistors |
| DE10300521A1 (de) * | 2003-01-09 | 2004-07-22 | Siemens Ag | Organoresistiver Speicher |
| DE502004003677D1 (de) * | 2003-01-21 | 2007-06-14 | Polyic Gmbh & Co Kg | Organisches elektronikbauteil und verfahren zur herstellung organischer elektronik |
| DE10302149A1 (de) | 2003-01-21 | 2005-08-25 | Siemens Ag | Verwendung leitfähiger Carbon-black/Graphit-Mischungen für die Herstellung von low-cost Elektronik |
| KR20050096162A (ko) * | 2003-01-28 | 2005-10-05 | 코닌클리케 필립스 일렉트로닉스 엔.브이. | 전자 디바이스 |
| CN1742343B (zh) * | 2003-01-29 | 2011-10-19 | 波尔伊克两合公司 | 有机存储单元及其驱动电路 |
| DE10330062A1 (de) * | 2003-07-03 | 2005-01-27 | Siemens Ag | Verfahren und Vorrichtung zur Strukturierung von organischen Schichten |
| DE10330064B3 (de) * | 2003-07-03 | 2004-12-09 | Siemens Ag | Logikgatter mit potentialfreier Gate-Elektrode für organische integrierte Schaltungen |
| DE10338277A1 (de) * | 2003-08-20 | 2005-03-17 | Siemens Ag | Organischer Kondensator mit spannungsgesteuerter Kapazität |
| DE10339036A1 (de) | 2003-08-25 | 2005-03-31 | Siemens Ag | Organisches elektronisches Bauteil mit hochaufgelöster Strukturierung und Herstellungsverfahren dazu |
| JP2005072528A (ja) * | 2003-08-28 | 2005-03-17 | Shin Etsu Chem Co Ltd | 薄層電界効果トランジスター及びその製造方法 |
| EP1665290B1 (en) | 2003-09-02 | 2007-05-02 | Plastic Logic Limited | Production of electronic devices |
| GB0320491D0 (en) | 2003-09-02 | 2003-10-01 | Plastic Logic Ltd | Multi-level patterning |
| DE10340643B4 (de) * | 2003-09-03 | 2009-04-16 | Polyic Gmbh & Co. Kg | Druckverfahren zur Herstellung einer Doppelschicht für Polymerelektronik-Schaltungen, sowie dadurch hergestelltes elektronisches Bauelement mit Doppelschicht |
| DE10340644B4 (de) | 2003-09-03 | 2010-10-07 | Polyic Gmbh & Co. Kg | Mechanische Steuerelemente für organische Polymerelektronik |
| DE10340711A1 (de) | 2003-09-04 | 2005-04-07 | Covion Organic Semiconductors Gmbh | Elektronische Vorrichtung enthaltend organische Halbleiter |
| GB0321383D0 (en) | 2003-09-12 | 2003-10-15 | Plastic Logic Ltd | Polymer circuits |
| DE102004002024A1 (de) * | 2004-01-14 | 2005-08-11 | Siemens Ag | Organischer Transistor mit selbstjustierender Gate-Elektrode und Verfahren zu dessen Herstellung |
| JP4501444B2 (ja) * | 2004-02-04 | 2010-07-14 | ソニー株式会社 | トランジスタにおける配線構造の形成方法及び電界効果型トランジスタの製造方法 |
| EP1564827A1 (en) * | 2004-02-10 | 2005-08-17 | Université Libre De Bruxelles | Method for the manufacturing of multilayer mesogenic components |
| DE102004021989A1 (de) | 2004-05-04 | 2005-12-15 | Covion Organic Semiconductors Gmbh | Organische elektronische Vorrichtungen |
| US7449758B2 (en) * | 2004-08-17 | 2008-11-11 | California Institute Of Technology | Polymeric piezoresistive sensors |
| DE102004040831A1 (de) * | 2004-08-23 | 2006-03-09 | Polyic Gmbh & Co. Kg | Funketikettfähige Umverpackung |
| WO2006048833A1 (en) * | 2004-11-05 | 2006-05-11 | Polymer Vision Limited | Method for patterning an organic material to concurrently form an insulator and a semiconductor and device formed thereby |
| WO2006061658A1 (en) | 2004-12-06 | 2006-06-15 | Plastic Logic Limited | Electrode patterning |
| JP4792781B2 (ja) * | 2004-12-06 | 2011-10-12 | 凸版印刷株式会社 | 薄膜トランジスタの製造方法 |
| DE102004059467A1 (de) * | 2004-12-10 | 2006-07-20 | Polyic Gmbh & Co. Kg | Gatter aus organischen Feldeffekttransistoren |
| DE102004059465A1 (de) * | 2004-12-10 | 2006-06-14 | Polyic Gmbh & Co. Kg | Erkennungssystem |
| DE102004059464A1 (de) * | 2004-12-10 | 2006-06-29 | Polyic Gmbh & Co. Kg | Elektronikbauteil mit Modulator |
| DE102004063435A1 (de) | 2004-12-23 | 2006-07-27 | Polyic Gmbh & Co. Kg | Organischer Gleichrichter |
| DE102005009819A1 (de) | 2005-03-01 | 2006-09-07 | Polyic Gmbh & Co. Kg | Elektronikbaugruppe |
| DE102005009820A1 (de) | 2005-03-01 | 2006-09-07 | Polyic Gmbh & Co. Kg | Elektronikbaugruppe mit organischen Logik-Schaltelementen |
| GB0506895D0 (en) | 2005-04-05 | 2005-05-11 | Plastic Logic Ltd | Ablation threshold adjustment by electroless plating |
| GB0506899D0 (en) | 2005-04-05 | 2005-05-11 | Plastic Logic Ltd | Multiple conductive layer TFT |
| DE102005017655B4 (de) * | 2005-04-15 | 2008-12-11 | Polyic Gmbh & Co. Kg | Mehrschichtiger Verbundkörper mit elektronischer Funktion |
| GB0511132D0 (en) | 2005-06-01 | 2005-07-06 | Plastic Logic Ltd | Layer-selective laser ablation patterning |
| WO2007029028A1 (en) | 2005-09-06 | 2007-03-15 | Plastic Logic Limited | Laser ablation of electronic devices |
| GB0518105D0 (en) | 2005-09-06 | 2005-10-12 | Plastic Logic Ltd | Step-and-repeat laser ablation of electronic devices |
| DE102005031448A1 (de) | 2005-07-04 | 2007-01-11 | Polyic Gmbh & Co. Kg | Aktivierbare optische Schicht |
| GB0515175D0 (en) | 2005-07-25 | 2005-08-31 | Plastic Logic Ltd | Flexible resistive touch screen |
| DE102005035590A1 (de) * | 2005-07-29 | 2007-02-01 | Polyic Gmbh & Co. Kg | Elektronisches Bauelement |
| DE102005035589A1 (de) | 2005-07-29 | 2007-02-01 | Polyic Gmbh & Co. Kg | Verfahren zur Herstellung eines elektronischen Bauelements |
| EP1752480A1 (en) * | 2005-08-12 | 2007-02-14 | Merck Patent GmbH | Polymerizable dielectric material |
| US20070034842A1 (en) * | 2005-08-12 | 2007-02-15 | Merck Patent Gesellschaft Mit Beschrankter Haftung | Polymerizable dielectric material |
| DE102005042166A1 (de) * | 2005-09-06 | 2007-03-15 | Polyic Gmbh & Co.Kg | Organisches Bauelement und ein solches umfassende elektrische Schaltung |
| DE102005044306A1 (de) | 2005-09-16 | 2007-03-22 | Polyic Gmbh & Co. Kg | Elektronische Schaltung und Verfahren zur Herstellung einer solchen |
| US8987808B2 (en) | 2006-03-29 | 2015-03-24 | Cambridge Enterprise Limited | Thin film transistor with accurately aligned electrode patterns and electronic device(s) that include same |
| GB0611032D0 (en) | 2006-06-05 | 2006-07-12 | Plastic Logic Ltd | Multi-touch active display keyboard |
| JP2008041960A (ja) | 2006-08-07 | 2008-02-21 | Nissan Chem Ind Ltd | 電子回路部品の製造方法 |
| FI20070063A0 (fi) * | 2007-01-24 | 2007-01-24 | Ronald Oesterbacka | Orgaaninen kenttävaikutustransistori |
| US8003980B2 (en) * | 2007-01-30 | 2011-08-23 | Hewlett-Packard Development Company, L.P. | Layered electro-organic devices with crosslinked polymer and methods of preparing the same |
| WO2008144759A2 (en) * | 2007-05-21 | 2008-11-27 | Plextronics, Inc. | Organic electrodes and electronic devices |
| WO2008144762A2 (en) * | 2007-05-21 | 2008-11-27 | Plextronics, Inc. | Organic electrodes and electronic devices |
| DE102008045662A1 (de) | 2008-09-03 | 2010-03-04 | Merck Patent Gmbh | Optoelektronische Vorrichtung |
| DE102008045664A1 (de) | 2008-09-03 | 2010-03-04 | Merck Patent Gmbh | Optoelektronische Vorrichtung |
| US8637853B2 (en) | 2007-10-24 | 2014-01-28 | Merck Patent Gmbh | Optoelectronic device |
| US7879678B2 (en) * | 2008-02-28 | 2011-02-01 | Versatilis Llc | Methods of enhancing performance of field-effect transistors and field-effect transistors made thereby |
| DE102008045663A1 (de) | 2008-09-03 | 2010-03-04 | Merck Patent Gmbh | Fluorverbrückte Assoziate für optoelektronische Anwendungen |
| KR101491714B1 (ko) * | 2008-09-16 | 2015-02-16 | 삼성전자주식회사 | 반도체 소자 및 그 제조 방법 |
| GB0819274D0 (en) | 2008-10-21 | 2008-11-26 | Plastic Logic Ltd | Method and apparatus for the formation of an electronic device |
| IT1392069B1 (it) * | 2008-11-27 | 2012-02-09 | St Microelectronics Srl | Metodo per realizzare un dispositivo elettronico organico a film sottile e corrispondente dispositivo |
| US20140097003A1 (en) * | 2012-10-05 | 2014-04-10 | Tyco Electronics Amp Gmbh | Electrical components and methods and systems of manufacturing electrical components |
| TWI628803B (zh) * | 2017-09-15 | 2018-07-01 | 友達光電股份有限公司 | 有機薄膜電晶體元件及其製作方法 |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB8715959D0 (en) * | 1987-07-07 | 1987-08-12 | British Petroleum Co Plc | Field effect transistors |
| JPH01259563A (ja) | 1988-04-08 | 1989-10-17 | Mitsubishi Electric Corp | 電界効果型トランジスタ |
| US5892244A (en) * | 1989-01-10 | 1999-04-06 | Mitsubishi Denki Kabushiki Kaisha | Field effect transistor including πconjugate polymer and liquid crystal display including the field effect transistor |
| WO1990008402A1 (fr) * | 1989-01-10 | 1990-07-26 | Mitsubishi Denki Kabushiki Kaisha | Transistor a effet de champ et dispositif d'affichage a cristaux liquides l'utilisant |
| JP2813428B2 (ja) * | 1989-08-17 | 1998-10-22 | 三菱電機株式会社 | 電界効果トランジスタ及び該電界効果トランジスタを用いた液晶表示装置 |
| FR2664430B1 (fr) * | 1990-07-04 | 1992-09-18 | Centre Nat Rech Scient | Transistor a effet de champ en couche mince de structure mis, dont l'isolant et le semiconducteur sont realises en materiaux organiques. |
| JP3224829B2 (ja) * | 1991-08-15 | 2001-11-05 | 株式会社東芝 | 有機電界効果型素子 |
| US5427841A (en) | 1993-03-09 | 1995-06-27 | U.S. Philips Corporation | Laminated structure of a metal layer on a conductive polymer layer and method of manufacturing such a structure |
| ATE171560T1 (de) | 1993-03-09 | 1998-10-15 | Koninkl Philips Electronics Nv | Herstellungsverfahren eines musters von einem elektrisch leitfähigen polymer auf einer substratoberfläche und metallisierung eines solchen musters |
| US5567550A (en) * | 1993-03-25 | 1996-10-22 | Texas Instruments Incorporated | Method of making a mask for making integrated circuits |
| JP3246189B2 (ja) * | 1994-06-28 | 2002-01-15 | 株式会社日立製作所 | 半導体表示装置 |
| JP2001506393A (ja) * | 1994-09-06 | 2001-05-15 | フィリップス エレクトロニクス ネムローゼ フェンノートシャップ | 導電性ポリマー製の透明な構造を付与した電極層を有するエレクトロルミネセント装置 |
| TW293172B (enExample) | 1994-12-09 | 1996-12-11 | At & T Corp | |
| US5625199A (en) * | 1996-01-16 | 1997-04-29 | Lucent Technologies Inc. | Article comprising complementary circuit with inorganic n-channel and organic p-channel thin film transistors |
-
1998
- 1998-07-27 EP EP98932464A patent/EP0968537B1/en not_active Expired - Lifetime
- 1998-07-27 JP JP51409999A patent/JP4509228B2/ja not_active Expired - Fee Related
- 1998-07-27 WO PCT/IB1998/001144 patent/WO1999010939A2/en not_active Ceased
- 1998-08-17 US US09/135,416 patent/US6429450B1/en not_active Expired - Lifetime
-
2002
- 2002-06-05 US US10/163,104 patent/US7402834B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| WO1999010939A3 (en) | 1999-06-10 |
| JP2001505002A (ja) | 2001-04-10 |
| EP0968537B1 (en) | 2012-05-02 |
| WO1999010939A9 (en) | 2006-05-26 |
| EP0968537A2 (en) | 2000-01-05 |
| US6429450B1 (en) | 2002-08-06 |
| US7402834B2 (en) | 2008-07-22 |
| US20020151117A1 (en) | 2002-10-17 |
| WO1999010939A2 (en) | 1999-03-04 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP4509228B2 (ja) | 有機材料から成る電界効果トランジスタ及びその製造方法 | |
| CN101542744B (zh) | 自对准有机薄膜晶体管及其制造方法 | |
| TW573329B (en) | Planar polymer transistor | |
| KR101154132B1 (ko) | 유기 절연막 조성물 및 이를 이용한 유기 절연막의 패턴 형성방법 | |
| CN101627464B (zh) | 层叠结构体及其制造方法 | |
| JP2003518754A (ja) | 溶液処理された素子 | |
| JP2005509299A (ja) | シロキサンポリマー界面を有する有機薄膜トランジスタ | |
| JP2003518755A (ja) | 内部接続の形成方法 | |
| US20080315192A1 (en) | Integrated Circuit Comprising an Organic Semiconductor, and Method for the Production of an Integrated Circuit | |
| JP2006295166A (ja) | 電子デバイス、薄膜トランジスタ及び薄膜トランジスタの作製方法 | |
| JP2007013138A (ja) | 有機簿膜トランジスタの製造方法及びこれによって製造された有機薄膜トランジスタ | |
| EP1542241B1 (en) | Composition for forming organic insulating film and organic insulating film formed from the same | |
| KR20060079195A (ko) | 박막 트랜지스터의 밀봉 방법 | |
| JP2003518756A (ja) | 溶液処理 | |
| CN1767158A (zh) | 制备薄膜晶体管的方法 | |
| KR101050588B1 (ko) | 유기절연막 패턴형성 방법 | |
| JP2006295165A (ja) | 薄膜トランジスタ及び薄膜トランジスタの作製方法 | |
| JP5132053B2 (ja) | 有機薄膜トランジスタの製造方法 | |
| CN1617367A (zh) | 以表面浮雕结构来增强载流子迁移率的有机薄膜晶体管 | |
| JP5137296B2 (ja) | 電界効果トランジスタ | |
| JPH06177380A (ja) | 電界効果型トランジスタおよびその製造方法 | |
| JP4281324B2 (ja) | 有機薄膜トランジスタ素子、その製造方法及び有機薄膜トランジスタシート | |
| JP2004179542A (ja) | 有機薄膜トランジスタ及びその製造方法 | |
| JP4652704B2 (ja) | 有機半導体素子 | |
| JP2004063977A (ja) | 電界効果トランジスタ |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20050725 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20050725 |
|
| RD02 | Notification of acceptance of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7422 Effective date: 20071009 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20090602 |
|
| A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20090902 |
|
| A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20091019 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20091202 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20100216 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20100218 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20100330 |
|
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20100428 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130514 Year of fee payment: 3 |
|
| R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20140514 Year of fee payment: 4 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| LAPS | Cancellation because of no payment of annual fees |