WO1990008402A1 - Transistor a effet de champ et dispositif d'affichage a cristaux liquides l'utilisant - Google Patents

Transistor a effet de champ et dispositif d'affichage a cristaux liquides l'utilisant Download PDF

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Publication number
WO1990008402A1
WO1990008402A1 PCT/JP1990/000017 JP9000017W WO9008402A1 WO 1990008402 A1 WO1990008402 A1 WO 1990008402A1 JP 9000017 W JP9000017 W JP 9000017W WO 9008402 A1 WO9008402 A1 WO 9008402A1
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Prior art keywords
film
semiconductor layer
liquid crystal
conjugated polymer
electrode
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PCT/JP1990/000017
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English (en)
Japanese (ja)
Inventor
Toshihiko Tanaka
Syuji Doi
Hiroshi Koezuka
Akira Tsumura
Hiroyuki Fuchigami
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Mitsubishi Denki Kabushiki Kaisha
Sumitomo Chemical Company, Limited
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Application filed by Mitsubishi Denki Kabushiki Kaisha, Sumitomo Chemical Company, Limited filed Critical Mitsubishi Denki Kabushiki Kaisha
Publication of WO1990008402A1 publication Critical patent/WO1990008402A1/fr
Priority to US09/228,936 priority Critical patent/US6060338A/en
Priority to US09/228,937 priority patent/US6060333A/en

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
    • H10K19/10—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00 comprising field-effect transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/114—Poly-phenylenevinylene; Derivatives thereof
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/133302—Rigid substrates, e.g. inorganic substrates

Definitions

  • the present invention relates to a field-effect transistor using an organic semiconductor (hereinafter abbreviated as an FET element) and a liquid crystal display device using the same as a driving element.
  • an FET element organic semiconductor
  • FET devices using silicon or GaAs single crystal as a semiconductor layer have been known and have been put to practical use. In these devices, not only is the material used expensive, but also the device fabrication process is very complicated. However, the area in which devices can be incorporated is limited by the size of the wafer. For example, in the case of manufacturing an active drive element used for a large-screen liquid crystal display element, as long as the above-described wafer is used, there are significant restrictions on price, surface area, and area. There is. Due to such restrictions, at present, as a FET element used as a driving element in a liquid crystal display element, a thin film transistor using amorphous silicon is used as an FET element.
  • a ⁇ -conjugated polymer has a chemical structure skeleton consisting of conjugated double bonds and triple bonds.
  • the valence band and conduction band formed by the overlapping of 7 ⁇ -electron orbitals, and It is thought to have a band structure consisting of a forbidden band separating them.
  • the forbidden band varies depending on the material, but is in the range of 1 to 4 eV for most 7 ⁇ -conjugated polymers. For this reason, 7 ⁇ -conjugated polymers themselves show only an insulator or a near-conductivity to it.
  • the removal of electrons from the valence band (oxidation) or the injection of electrons into the conduction band (reduction) by chemical, electrochemical, or physical methods.
  • doping is described as producing a carrier (carrier) that carries charges.
  • carrier carrier
  • the amount of doping can be controlled. Therefore, the conductivity can be arbitrarily changed over a wide range from the insulator region to the metal region.
  • the 7 ⁇ -conjugated polymer obtained when doping is oxidized becomes p-type, and in the case of reduction, it becomes n-type. This is similar to impurity addition in inorganic semiconductors. For this reason, various semiconductor devices using a 7 ⁇ -conjugated polymer as a semiconductor material can be manufactured.
  • F ⁇ element using a ⁇ -conjugated polymer as a semiconductor polyacetylene (Journal of Applied Physics, J. Appl.
  • FIG. 15 is a sectional view of a conventional FET device using polyacetylene.
  • 1 is a glass serving as a substrate
  • 2 is an aluminum film serving as a gate electrode
  • 3 is a polysiloxane film serving as an insulating film
  • 4 is a semiconductor layer.
  • 5 and 6 are gold films serving as a source electrode and a drain electrode, respectively.
  • FIG. 16 is a cross-sectional view of an FET element having a semiconductor layer of poly (N-methylpyrrole) or polyphene.
  • reference numeral 3 denotes a silicon oxide film serving as an insulating film
  • 4 denotes a poly (N-methylpyrrole) film or a polyolefin film serving as a semiconductor layer
  • 5 and Reference numeral 6 denotes a gold film serving as a source electrode and a drain electrode
  • 1 denotes a silicon plate serving both as a substrate and a gate electrode
  • 2 denotes a silicon plate 7 in sonic contact. It is a metal for removing When poly (N-methylpyrrole) is used as the semiconductor layer, the current flowing between the source electrode 5 and the drain electrode 6 through the semiconductor layer 4 (conductivity) Since it can be controlled only slightly by the gate voltage, there is no practical value.
  • the source and the source can be modulated by the gate voltage. Drain-to-drain current is too low. Furthermore, in the case of an FET device using a porophene as a semiconductor layer, the source-drain current that can be modulated by the gate voltage is large, and the stability is further improved.
  • the FET element is manufactured by means of manufacturing a polyolefin film directly on the element substrate by the electrolytic polymerization method, the number of elements in the element manufacturing process is large. It was difficult to fabricate the same FET element simultaneously on a large-area substrate at the same time, which was a problem in manufacturing.
  • the FET element according to the present invention comprises a 7 ⁇ -conjugated polymer film, which acts as a semiconductor layer, and a 7 ⁇ ⁇ -conjugated polymer precursor that is first soluble in a solvent; A body film is manufactured, and then, the precursor polymer film is manufactured by changing it to a monoconjugated polymer film.
  • liquid crystal display device uses the above-mentioned FET element as an active drive element.
  • a 7 ⁇ -conjugated polymer precursor from a solvent-soluble 7 ⁇ -conjugated polymer precursor is used. After preparing a film, this precursor polymer film was converted to a 71-conjugated polymer film.
  • this ⁇ -conjugated polymer film as a semiconductor layer, the device fabrication process becomes remarkable and easy, and many FET devices can be simultaneously formed on a large-area substrate. Just before it can be made at a price, all the fabricated F ⁇ ⁇ elements operate stably, and the gate-to-source current increases the source-to-drain current. ⁇ to be able to modulate
  • the F element according to another aspect of the present invention functions as a semiconductor layer.
  • LB film of a ⁇ -conjugated polymer precursor is prepared using a 7 ⁇ -conjugated polymer precursor that is soluble in a solvent.
  • the LB film is made by changing the precursor polymer LB film to a 7 ⁇ ⁇ -conjugated polymer LB film (this LB film is an organic thin film, but is broadly called an LB film). That is how it was done.
  • a liquid crystal display device uses the above-mentioned FET element as an active drive element.
  • a region sandwiched between a source electrode and a drain electrode is formed of a 7 ⁇ -conjugated polymer obtained from a solvent-soluble precursor.
  • a 7 ⁇ ⁇ -conjugated polymer is obtained by forming a laminated film of an acid-donating film for donating an acid.
  • the molecular precursor film can be efficiently converted into a r-conjugated polymer film, and the source-drain current can be more greatly modulated by the gate voltage.
  • FIG. 1 is a cross-sectional view showing an embodiment of an FET device according to the present invention
  • FIG. 2 is a cross-sectional view showing a portion corresponding to one pixel of an embodiment of a liquid crystal display device according to the present invention
  • FIG. 3 and 4 are cross-sectional views each showing another embodiment of the FET device according to the present invention
  • FIG. 5 is a portion corresponding to one pixel in another embodiment of the liquid crystal display device according to the present invention.
  • FIG. 6 is a cross-sectional view showing source / drain at each gate voltage of the FET element according to the first embodiment.
  • Figure 7, Figure 8, Figure 9, and Figure 9 show the characteristics of the current between the source and the source-drain voltage, respectively, in Example 2, Example 3, and Example 4.
  • FIG. 10 shows the relationship between the source and drain of each of the FET elements of Example 1 and Example 4 and the FET element of the comparative example when a 50 V source-drain voltage is applied.
  • Fig. 11 shows the same characteristics of each of the FET elements in Examples 2 and 3 and the comparative example
  • Fig. 12 shows the FET in the liquid crystal display device of Example 5.
  • Figures 13 and 14 show the characteristics of Example 6
  • FIG. 15 is a cross-sectional view showing an FET device using conventional polyacetylene as a semiconductor layer
  • FIG. 16 is a cross-sectional view showing a conventional poly (N-type) device.
  • Le bi ⁇ Lumpur) or port Li Chiofu E down is a sectional view showing an FET device using as a semiconductor layer.
  • FIG. 1 is a configuration diagram showing an example of the FET element according to the present invention.
  • 1 is a substrate
  • 2 is a gate electrode provided on the substrate 1
  • 3 is an insulating film
  • 4 is a 7 ⁇ -conjugated polymer film or its LB film that functions as a semiconductor layer
  • 5 and 6 Are the source and drain electrodes, respectively.
  • FIG. 2 is a sectional view showing an example of the liquid crystal display device according to the present invention.
  • 1 is the substrate and 2 is the base.
  • Gate electrode provided on one side of plate 1 3 is an insulating film provided on substrate 1 and gate electrode 2
  • 5 is a source electrode provided on insulating film 3
  • 6 is the same.
  • the drain electrode 4 is provided on the insulating film 3 separately from the source electrode 5, and the drain electrode 4 is provided on the insulating film 3, the source electrode 5, and the drain electrode 6.
  • 7 ⁇ — A conjugated polymer or a semiconductor layer consisting of its LB film strength, which is in contact with the drain electrode 6 and the drain electrode 6, respectively.
  • These 2 to 6 are FETs in the liquid crystal display device. It is part 11 of the element.
  • 7 is an electrode connected to the drain electrode 6 of the FET element 11
  • 8 is a liquid crystal layer
  • 9 is a transparent electrode
  • 10 is a glass plate with a polarizing plate.
  • the electrodes 7 and 9 are subjected to an orientation treatment.
  • 7 to 10 are liquid crystal display portions 12 of the liquid crystal display device.
  • the materials used for the FET element and the liquid crystal display device according to the present invention include the following.
  • the substrate 1 can be made of any insulating material. Specifically, the substrate 1 can be made of glass, aluminum sintered body, polyimide, or polyester. Inolem, Polyethylene film, Polyethylene film, Polyno. Various insulating plastics such as laxylene film can be used. In the case of a liquid crystal display device, it is preferable that the substrate 1 is transparent.
  • the gate electrode 2, the source electrode 5 and the drain electrode 6 are gold, platinum, chromium, and gold.
  • Methods for providing these electrodes here include methods such as vapor deposition, sputtering, plating, and various types of CVD growth.
  • a conductive organic low-molecular compound or 7: -conjugated polymer may be used. In that case, the LB method can be applied.
  • a p-type silicon and an n-type silicon are connected to the gate electrode 2 and the substrate I. It may be used as a function. In this case, the substrate 1 can be omitted. In this case, the volume resistivity of the p-type silicon or the n-type silicon may be any value. However, in practice, the 7 ⁇ -conjugated polymer film 4 used as a semiconductor layer may be used. It is preferable to be smaller. Further, depending on the purpose of use of the FET element, a conductive plate or film such as a stainless steel plate or a copper plate can be used as the gate electrode 2 and the substrate 1.
  • an insulating film 3 as long as also the insulating inorganic state, and are also available in any material of an organic, generally the acid oak Li co down (S i 0 2), nitrided Li Con, aluminum oxide, Polyethylene, Polyester, Polyimide, Polyphenylene Sulfide, Polyparaxylene, Polyacrylonitrile, Various Insulation A LB film or the like is used. Of course, two or more of these materials may be used in combination.
  • the method for producing these insulating films and examples thereof include a CVD method, a plasma CVD method, a plasma polymerization method, a vapor deposition method, a spin-coating method, and a datetime method.
  • the insulating film 3 may be formed by a method such as thermal oxidation of silicon. The silicon oxide film thus obtained is preferably used.
  • the electrode 7 short-circuited with the drain electrode 6 of the FET element in the liquid crystal display section 12 has sufficient electric conductivity and is insoluble in the liquid crystal.
  • Metal such as gold, gold, white gold, chromium, and aluminum, and transparent electrodes such as tin oxide, indium oxide, indium tin oxide (IT IT), etc.
  • transparent electrodes such as tin oxide, indium oxide, indium tin oxide (IT IT), etc.
  • an organic polymer having conductivity may be used. Of course, two or more of these materials may be used in combination.
  • a transparent electrode such as tin oxide, indium oxide / tin oxide (I ⁇ 0) is generally used.
  • a conductive organic polymer having appropriate transparency may be used.
  • two or more of these materials may be used in combination.
  • the electrodes 7 and 9 need to be subjected to an orientation treatment such as oblique deposition or rubbing of Si 2 .
  • the liquid crystal layer 8 includes a guest-host type liquid crystal, a TN type liquid crystal, or a smectic.
  • a liquid crystal such as a C-phase liquid crystal can be used.
  • a glass is used for the substrate 1 and a transparent electrode is used for the electrode 7, the contrast can be improved by attaching a polarizing plate to the substrate 1.
  • the ratio increases.
  • the material of the 7 ⁇ -conjugated polymer film or its LB film 4 acting as a semiconductor layer it can be used as long as the precursor of the 7 ⁇ -conjugated polymer is soluble in a solvent.
  • two or more kinds may be used in combination.
  • a material having amphipathic properties is preferably used for the preparation of a precursor LB film. 7 _ Among the compounds whose precursors are soluble in the solvent, especially the general formula (1)
  • R and R 2 are —H, an alkyl group or an alkoxy group, and n is an integer of 10 or more).
  • a 7 ⁇ -conjugated polymer in which R, and R 2 are ⁇ ⁇ ⁇ is preferably used because of easy synthesis of a ⁇ - conjugated polymer precursor.
  • the solvent refers to various organic solvents, water, and mixtures thereof. What was said.
  • an organic solvent which has a lower specific gravity than water, is less soluble in water, and easily evaporates is preferably used for the preparation of a precursor LB film.
  • R 3 is a hydrocarbon group having 1 to 10 carbon atoms
  • any of R 3 in the general formula (2) can be used as long as it is a hydrocarbon group having 1 to 10 carbon atoms.
  • methyl, ethyl, propyl, Isopropyl, n-butynole, 2-ethylhexyl, and cyclopihexyl groups are examples, but hydrocarbon groups having 1 to 6 carbon atoms, particularly methyl and ethyl groups, are practical.
  • the method for synthesizing the polymer precursor used in the present invention is not particularly limited, but a polymer precursor obtained by a sulfonium salt decomposition method described below is preferred from the viewpoint of stability. .
  • the ion A is not particularly limited, and examples thereof include halogen, a hydroxyl group, boron tetrafluoride, perchloric acid, carboxylic acid, and sulfonate ion. Among them, halogens such as chlorine and bromine and hydroxyl ions are preferable.
  • the reaction solution is preferably an alkaline solution, and the alkaline solution is preferably a strong basic solution having a pH of 11 or more.
  • New Alkali that can be used is sodium hydroxide, hydroxide hydration, calcium hydroxide, quaternary ammonium salt hydroxide, sulfonium.
  • Sulfonium salts are unstable under heat, light, especially ultraviolet light, and strong basic conditions. After condensation polymerization, sulfonium chloride is gradually removed, and the sulfonium salt is converted to the alkoxy group. It is desirable to carry out the condensation polymerization reaction at a relatively low temperature, that is, at a temperature of not more than ° C, particularly not more than 5 ° C, and more preferably not more than -10 ° C, since the conversion of the compound cannot be effectively performed.
  • the reaction time may be appropriately determined depending on the polymerization temperature and is not particularly limited, but is usually in the range of 10 minutes to 50 hours.
  • the precursor of the 7 ⁇ -conjugated polymer is initially a sulfonium salt, that is, a high molecular weight having one S + (A—) in the side chain.
  • the sulfonium side chain In the reaction in which the sulfonium side chain is replaced with an alkoxy group, the sulfonium side chain can be effectively converted to an alkoxy group by raising the condensation polymerization temperature in a solvent containing alcohol after the condensation polymerization. Can be replaced by
  • the substitution reaction of the alkoxy group can be performed following the polymerization.
  • the solvent for the polymerization is water or the like and does not contain alcohol, the same procedure can be performed by mixing the alcohol after polymerization.
  • 0 to 50 ° C is preferable from the viewpoint of the reaction rate, and 0 to 25 ° C is more preferable.
  • the polymer having an alkoxy group in the side chain is insoluble in a commonly used mixed solvent, it precipitates as the reaction proceeds. Therefore, it is effective to carry out the reaction time until precipitation is sufficiently generated.
  • the reaction time is preferably 15 minutes or more, but from the viewpoint of yield, it is preferably 1 hour or more. In this way, the -conjugated polymer precursor having an alkoxy group in the side chain is separated by filtering the precipitated product.
  • the molecular weight is sufficiently large, and at least the repetition of the 7 ⁇ -conjugated polymer precursor of the general formula (2) is preferable.
  • the r-conjugated polymer precursor has excellent solubility and is soluble in many organic solvents.
  • organic solvents include dimethylformamide, dimethylacetamide, dimethylsulfoxyd, dioxane, black mouth holm, and tetrahydrofura. And the like.
  • an organic solvent which has a lower specific gravity than water, is hardly soluble in water, and easily evaporates is preferred.
  • a spin coat using a 7 ⁇ -conjugated polymer precursor solution dissolved in a solvent is used.
  • Method, cast method, dating method, c-coat method, ⁇ -report method, etc. are used.
  • the solvent is evaporated to obtain a 7 ⁇ -conjugated polymer precursor thin film, and the 7 ⁇ -conjugated polymer precursor thin film is heated to act as a semiconductor by heating the 7 ⁇ -conjugated polymer precursor thin film.
  • the heating conditions for forming the 7 ⁇ -conjugated polymer film are not particularly limited, but are practical. In the following, it is desirable to carry out the reaction under an inert gas atmosphere. Of course,
  • a pure or salt aqueous solution or the like is converted into a subphase and dissolved in a solvent—a conjugated polymer.
  • a vertical immersion method using a Kuhn-type trough, a horizontal deposition method, and an LB film production method using a mu- ing-wall type trough are used.
  • LB film of conjugated polymer By heating the LB film of a monoconjugated polymer precursor, there is no particular limitation on the heating conditions for forming a 7 ⁇ -conjugated polymer LE film, but practically 200 e C above, below 300 ° C, arbitrary and desired this carried out in an inert gas atmosphere. Of course, it is possible to convert the 7 ⁇ -conjugated polymer precursor LB film into a 7 ⁇ -conjugated polymer LB film even with heating of 200 ⁇ or less.
  • the LB film of 7 ⁇ ⁇ -conjugated polymer When heated in an atmosphere of an inert gas containing protonic acids such as HC1 and HBr, the LB film of 7 ⁇ ⁇ -conjugated polymer is converted to the LB film of 7 ⁇ -conjugated polymer. Conversion often proceeds smoothly.
  • the precursor before preparing the precursor LB film, before the 7 ⁇ -conjugated polymer If the precursor is solvent-soluble but does not have sufficient amphipathic properties, it may be combined with a good amphipathic compound such as stearic acid arachidic acid. It is possible to produce an LB film using the developing solution prepared by mixing. In addition, it is possible to prepare an LB film by adsorbing the above-mentioned 7-conjugated high molecular weight precursor to a monomolecular film of an amphipathic compound on a subphase.
  • a good amphipathic compound such as stearic acid arachidic acid
  • FIGS. 3 and 4 are cross-sectional views showing another embodiment of the FET device according to the present invention.
  • FIG. 3 is a cross-sectional views showing another embodiment of the FET device according to the present invention.
  • the acid donor film is used to promote the conversion reaction from the precursor film of the 7 ⁇ ⁇ -conjugated polymer 4 to the ⁇ -conjugated polymer film, since they are laminated on the substrate 1 and the gate electrode 2 respectively. It is.
  • the positions of the 7 ⁇ -conjugated polymer film 4 and the acid donor film 13 are exchanged, that is, the acid donor film 13 is placed on the insulating film 3, the source electrode 5 and the drain electrode 6. Even if the 7 FET-conjugated polymer film is laminated on the acid donor film 13, the fabricated FET device controls the source-drain current by applying the gate voltage. You can do it.
  • FIG. 5 is a cross-sectional view showing another embodiment of the liquid crystal display device according to the present invention, in which 13 is laminated on a 7 ⁇ -conjugated polymer film 4 and is a precursor film of ⁇ -conjugated polymer 4. It is an acid donor film that promotes the conversion reaction to ⁇ -conjugated polymers.
  • FIGS. 3, 4 and 5 are the same as the corresponding parts in FIGS. 1 and 2 described above, and the manufacturing method is also the same.
  • the acid-donating layer 13 is not particularly limited as long as it is capable of injecting an acid for promoting a conversion reaction from a 7 ⁇ -conjugated polymer precursor to a 7 ⁇ -conjugated polymer 4. .
  • the acid donor film itself be an insulator from the viewpoint of FET device characteristics.
  • poly film poly Estino-Finnorem, 'Polyethylene-Phizo-Resolem', 'Poly-Eno-Res-No-Film', 'Polyno-Rex-No-Film' Acid-impregnated polymer membranes using lime, etc., amic acid'amine complexes, tertiary amines, diazonium diluate salt.
  • Diaryliodonium diluate salt Polymer membrane containing an acid generator such as sulfonium sulphate, sulphonic acid salt, etc., reaction of p-xylylene-bis (sulfonium ⁇ -genide) or a derivative thereof
  • an acid generator such as sulfonium sulphate, sulphonic acid salt, etc.
  • a film capable of easily desorbing an acid can be used.
  • the method for obtaining the acid donor film There is no particular limitation on the method for obtaining the acid donor film. Examples of the method include a CVD method, a plasma CVD method, a plasma polymerization method, an evaporation method, a class ion beam evaporation method, and an organic molecular beam epitaxy. Evening growth method, spin coating method, dating method, LB method, etc. can be used, all of which can be used
  • the ⁇ -conjugated polymer represented by the general formula (1) is used for the semiconductor layer, and the general formula (4)
  • R s is one of H, an alkyl group or an alkoxy group
  • R 7 and R 8 are a hydrocarbon group having 1 to 10 carbon atoms
  • X ⁇ is a halogen such as Br, C 1, (n is an integer of 10 or more).
  • the general formula (5) is water-soluble and can be easily prepared by the spin coating method, casting method, dating method, knuckle coating method, roll coating method, etc. A film can be formed.
  • a stack consisting of a ⁇ -conjugated polymer thin film precursor (general formula (2)) to be a semiconductor layer and a 7 ⁇ -conjugated polymer precursor film (general formula (5)) to be an acid donor film
  • a ⁇ -conjugated polymer thin film precursor generally formula (2)
  • a 7 ⁇ -conjugated polymer precursor film generally formula (5)
  • the spin-coating method, casting method, and date-forming method using a 7 ⁇ -active polymer precursor solution dissolved in a solvent There is no particular limitation on the method of obtaining the film, but the spin-coating method, casting method, and date-forming method using a 7 ⁇ -active polymer precursor solution dissolved in a solvent. 7 ⁇ -conjugated polymer precursor film (single-branch type) that becomes a semiconductor by a method such as the bar coating method and the roll coating method.
  • an acid-donating film (general formula (5)) by the same method as described above from the viewpoint of fabricating the F-element.
  • a spin-coating method using a 7 ⁇ ⁇ -conjugated polymer precursor solution dissolved in a solvent is performed.
  • the semiconductor layer is formed by a cast method, a dating method, a one-coat method, a roll-coat method, or the like.
  • a ⁇ -conjugated polymer precursor film (general formula (2)) is obtained, and may be used as a laminated film. Of course, the above lamination may be repeated.
  • the 71-conjugated high molecular film (general formula (1)) and the insulating film (general formula (4 ))) Is obtained.
  • a laminated film composed of a 7 ⁇ -conjugated polymer precursor thin film (general formula (2)) and an acid donor film (general formula (5)) By heating a laminated film composed of a 7 ⁇ -conjugated polymer precursor thin film (general formula (2)) and an acid donor film (general formula (5)), the -conjugated polymer film (general formula (5)) is heated.
  • the heating conditions for obtaining a laminated film composed of the formula (1)) and the insulating film (general formula (4)) are not particularly limited, but are practically not less than 100 and not more than 300 and an inert gas atmosphere. It is desirable to work in an atmosphere.
  • the 7 ⁇ -conjugated polymer precursor film (general formula (5)) which is an acid-donating layer, is converted to a monoconjugated polymer (general formula (4)) by heating.
  • -An acid is provided by diffusing into a conjugated polymer precursor film (general formula (2)).
  • the insulator of the acid donor film can be used as both the acid donor film and the gate insulating film in the FET device (FIG. 4). In this case, the FET element fabrication process can be simplified.
  • the depletion formed on the ⁇ -conjugated polymer film 4 or its L ⁇ film side at the interface between the 7 ⁇ -conjugated polymer film or its LB film 4 and the insulating film 3 The width of the layer is controlled by the voltage applied between the gate electrode 2 and the source electrode 5, and the width of the layer is controlled by the effective carrier channel cross-sectional area. It is considered that the current flowing between the drain electrodes 6 changes. At this time, if the 7 ⁇ -conjugated polymer film 4 or its L ⁇ film has only a ⁇ -type semiconductor with low conductivity, the gate electrode 2 is not a metal electrode.
  • the F-element section 11 and the liquid crystal display section 12 are connected in series. If the monoconjugated high molecular film 4 or its L-type film exhibits ⁇ -type semiconductivity, a negative voltage is applied to the transparent electrode 9 with respect to the source electrode 5 and the gate electrode 2 When a negative voltage is applied to the liquid crystal, the liquid crystal will light up 8 times. This is because, as described above, the resistance between the source and drain electrodes of the F ⁇ element decreases due to the application of a negative voltage to the gate electrode 2, and the voltage is applied to the liquid crystal display section 12. Take This is considered to be the reason.
  • the driving of the liquid crystal display section 12 can be controlled by changing the gate voltage applied to the attached FET element.
  • the gate electrode 2 is provided on the substrate 1.
  • a 7 ⁇ -conjugated polymer film or LB film is provided on the substrate, and the source electrode and the LB film are provided thereon.
  • a drain electrode may be provided separately from the source electrode, a gate electrode may be provided on the insulating film with an insulating film interposed between the source electrode and the drain electrode. good.
  • a gate electrode is provided on a substrate, a 7 ⁇ ⁇ -conjugated polymer film or an LB film is provided thereon with an insulating film interposed, and a source electrode and the source electrode are further provided thereon.
  • a drain electrode may be provided separately from the above.
  • a source electrode is provided on the substrate and a drain electrode is provided separately from the source electrode, and a 7 ⁇ -conjugated polymer film or LB film is provided thereon. Further, a gate electrode may be provided with an insulating film interposed.
  • the acid donor film 13 is provided on the 7-conjugated polymer film 4 serving as the semiconductor layer.
  • the gate electrode 2 is provided on the substrate 1 and the insulating film is provided. 3 intervening and Alternatively, a source electrode 5 and a drain electrode 6 may be provided, an acid donor film 13 may be provided thereon, and a 7-conjugated high molecular film 4 which is a semiconductor layer may be provided thereon.
  • a gate electrode 2 is provided on a substrate 1, an acid supply layer 13 is provided thereon, and a source electrode 5 and a drain electrode are provided thereon.
  • a 7 ⁇ ⁇ -conjugated polymer film 4 which is a semiconductor layer may be provided thereon, and the acid donor film 13 and the gate insulating film 3 may be used together.
  • a gate electrode 2 is provided on a substrate 1, an acid donor layer 13 also serving as an insulating film 3 is provided thereon, and a semiconductor layer is provided thereon. 4 may be provided, on which the source electrode 5 and the drain electrode 6 may be provided.
  • a gate electrode 2 is provided on a substrate 1, an insulating film 3 is interposed, a 7 4-conjugated polymer film 4 is provided thereon, and an acid donor film 13 is provided thereon, and furthermore, Further, a source electrode 5 and a drain electrode 6 may be provided. Alternatively, a source electrode 5 and a drain electrode 6 are provided on the substrate 1, and a 7 ⁇ — conjugated polymer film 4 is provided thereon, and furthermore, an insulating layer serving also as the acid donor film 13 is provided. The gate electrode 2 may be provided with the film 3 interposed therebetween.
  • the FET element section 11 and the liquid crystal display section 12 are formed on the same substrate, but they may be formed on separate substrates and then connected. .
  • a 3-inch n-type silicon with a resistivity of 4 to 8 ⁇ cm was heated in an oxygen stream and covered with a 3000 A thick silicon oxide film.
  • a 200 A thick copper film was formed on one side of the silicon oxide film by using ordinary vacuum deposition, photolithography, and etching techniques.
  • Five pairs of 300 A-thick gold electrodes were provided on the ground. These five pairs of gold electrodes serve as source and drain electrodes in the FET element.
  • the width of the pair of gold electrodes, that is, the channel width was 2 mm
  • the distance between the two electrodes, that is, the channel length was 6 ⁇ m.
  • the substrate fabricated in this manner is hereinafter referred to as a FET element substrate.
  • the temperature of the FET element substrate and the ambient temperature were set at about 60 ° C, and the poly (2,
  • DMF dimethylformamide
  • the poly (2,5-diphenylvinylene) precursor The film-coated FET element substrate was heated in an infrared image furnace at 270 ° C. for about 2 hours under a nitrogen stream. As a result, the color of the precursor film changed from light yellow to brown. By the above heat treatment, the poly (2,5 phenylene vinylene) precursor film is converted into the poly (2,5 phenylene vinylene) film. In line with this, infrared
  • the silicon oxide film on the other surface of the FET element substrate covered with the film obtained as described above was mechanically separated from the bare silicon surface. Rhodium and indium alloys were applied to make ohmic contact.
  • the silicon plate itself functions as a common gate electrode for the five FET elements, and the silicon oxide film on the silicon plate forms the five FET elements. It works as a common gate insulating film.
  • the FET element shown in FIG. I was obtained.
  • 1 and 2 are silicon plates which are both a substrate and a gate electrode
  • 3 is a silicon oxide film which is an insulating film
  • 4 is a poly (poly) which works as a semiconductor layer.
  • Poly (2,5—Chenylenevinylene) films obtained from 2,5—Chenylenevinylene) precursor films, 5 and 6 are source and drain, respectively.
  • the FET element substrate manufactured in Example 1 is used. Savoff By setting the temperature of AIDS (water) to about 2 CTC,
  • the FET element substrate covered with the LB film was heated in an infrared image furnace for about 2 hours under a nitrogen stream at 210 ° C.
  • the color of the precursor LB film changed from light yellow to brown.
  • the LB film of the poly (2,5—Chenylenevinylene) precursor is converted to the LB film of the Poly (2,5—Chenylenevinylene). And, with this, red
  • the silicon oxide film on the other surface of the FET element substrate covered with the LB film obtained as described above is mechanically separated from the bare silicon surface to remove the gallium. Alloy of aluminum and aluminum The coating was applied to make an omic contact.
  • the silicon ⁇ itself acts as a common gate electrode of the five FET elements, and the silicon oxide film on the silicon ⁇ has five FET elements. It works as a common gate insulating film.
  • the FET element shown in FIG. 1 was obtained.
  • 1 and 2 are silicon plates which are both a substrate and a gate electrode
  • 3 is a silicon oxide film which is an insulating film
  • 4 is a poly (poly) which works as a semiconductor layer.
  • the LB film of poly (2,5—Chenylene vinylene) obtained from the precursor LB film, and 5 and 6 are the source respectively. It is a gold film that works as a source and drain electrode.
  • Example 2 Another embodiment using a heat treatment different from that of the second embodiment for obtaining the FET element having the structure shown in FIG. 1 will be described below.
  • a poly (2,5-divinylvinylene) LB film 100 layers was obtained on the FET element substrate by the LB method.
  • the gold electrode on the FET element substrate is replaced by a platinum electrode having a thickness of 300 A and a chromium having a thickness of 200 A as a base.
  • the FET element substrate coated with the LB film of poly (2,5-divinylvinylene) precursor was placed in an infrared image furnace and contained hydrogen chloride gas for about 1.5 hours.
  • Heat treatment was performed under a nitrogen stream at 9 CTC.
  • the color of the precursor LB film changed from pale yellow to a purple with a metallic luster.
  • the LB film of the poly (2.5-chlorovinylene) precursor is completely transformed into the LB film of the poly (2,5-chlorovinylene).
  • the silicon plate itself functions as a common gate electrode for the five FET elements, and the silicon oxide film on the silicon plate becomes By acting as a common gate insulating film for the two FET elements, an FET element having the structure shown in Fig. 1 was obtained.
  • 1 and 2 are silicon plates which are both a substrate and a gate electrode
  • 3 is a silicon oxide film which is an insulating film
  • 4 is a poly (poly) which acts as a semiconductor layer.
  • 2,5—Chenylene hinylene The LB film of poly (2,5-chlorobenzene) obtained from the precursor LB film, and 5 and 6 are the LB films, respectively. O with platinum film acting as source and drain electrodes
  • the temperature and ambient temperature of the FET element substrate similar to that used in Example 1 were set to about 60, and the following chemical structure was obtained.
  • Poly (p-vinylenevinylene) precursor poly (p-vinylenevinylene) precursor is prepared by the spin-cast method using about 2% aqueous solution of the poly (p-vinylenevinylene) precursor.
  • the film was obtained on a poly (2,5-diphenylvinylene) precursor. At this time, the number of revolutions of the spinner was set to 2000 revolutions per minute.
  • the film thickness of the obtained precursor film was 700 A.
  • the FET device substrate was heated in an infrared image furnace under a nitrogen stream at 210 ° C for about 2 hours.As a result, the color of the film changed from pale yellow to dark brown or dark purple. I did.
  • the poly (2,51-vinylenevinyl) precursor film and the poly '(p- The multi-layered film consisting of the poly (enylenevinylene) precursor film is composed of a poly (2,5—Chenylenevinylene) film and a poly (p—film), respectively.
  • the silicon oxide film on the other side of the FET element substrate covered with the film obtained as described above is mechanically separated from the bare silicon surface to form a gallium.
  • An alloy of um and indium was applied to make an ohmic contact.
  • the silicon plate itself acts as a common gate electrode for the five FET elements, and the silicon oxide film on the silicon plate forms the five FET elements. It works as a common gate insulating film.
  • the FET device shown in FIG. 3 was obtained.
  • 1 and 2 are silicon plates which are both a substrate and a gate electrode
  • 3 is a silicon oxide film which is an insulating film
  • 4 is a poly (poly) which acts as a semiconductor layer.
  • 5 and 6 are source and drain, respectively.
  • a gold film that works as an in-electrode, and 13 works as an acid donor film (p-f (P-phenylene vinylene) This is a poly (p-phenylene vinylene) film obtained from the precursor film.
  • the channel width is set to 2 and the channel length is set to 3 II m.
  • the electrode 7 has an effective area of 17 ⁇ 19 mm 2 .
  • this substrate is referred to as a liquid crystal display device substrate.
  • a DMF solution of about 2 wt% of the poly (2,5-divinylvinylene) precursor in the same manner as in Example 1, the above liquid was applied onto the display substrate. 2,5—Chenylenevinylene) A precursor film was obtained.
  • the poly (2,5-divinylvinylene) precursor film other than the FET element portion of the liquid crystal display device substrate is washed with chloroform, and then cleaned.
  • the substrate was heated at 200 ° C. for about 1 hour in a nitrogen stream containing about 1% hydrogen chloride gas using an infrared image furnace.
  • FE Only the T element part was covered with a poly (2,5-divinylvinylene) film, and the FET element part 11 in Fig. 2 of the liquid crystal display was completed.
  • a solution obtained by mixing a DMF solution (0.5%) of a poly (2,5—Chenylenevinylene) precursor of about 2 wt% and a cross-sectional form 9.5 was used.
  • an LB film (100 layers) of a poly (2,5-chlorobenzene) precursor was obtained on the liquid crystal display device substrate.
  • the substrate is removed.
  • the sample was heated at 90 ° C. for 1.5 hours in a nitrogen stream containing about 1% hydrogen chloride gas using an infrared image furnace.
  • the S i 0 2 obliquely deposited on glass plate 10 formed with a liquid crystal display device substrate therewith and IT 0 9 causes the opposite orientation of the liquid crystal subjected to the alignment treatment
  • a 10 m thick polyester film is provided between the liquid crystal display device substrate and the glass plate 10 on which the ITO 9 is formed so as to face the liquid crystal display device so that the liquid crystal display portion becomes an opening. Sealing was carried out with epoxy resin, leaving only a part, and surrounding the same part.
  • a guest-host liquid crystal (trade name: ZL11841, manufactured by Merck) is injected from the unsealed portion, sealed with epoxy resin, and a polarizing plate is mounted on the glass plate 10.
  • the liquid crystal display section 12 of the liquid crystal display device was completed.
  • Example 7 An example of a method for manufacturing a liquid crystal display device having the structure shown in FIG. 5 is described below.
  • a DMF solution of about 2 wt% of a poly (2,5-divinylvinylene) precursor was used on the above liquid crystal display device substrate, and the poly (2,5,4-vinylene) precursor was used in the same manner as in Example 4.
  • 5—Chenrenbiniren) A precursor film was obtained.
  • about 2 wt% of the poly (Nora-phenylenevinylene) precursor is placed on the poly (2,5-divinylvinylene) precursor film.
  • a poly (paraphenylenevinylene) precursor film was obtained in the same manner as in Example 4.
  • the poly (2,5-divinylvinylene) precursor and the poly (paravinylenevinylene) precursor other than the FET element portion of this liquid crystal display device substrate After cleaning the film using a cloth hood, the substrate was washed for about 1 hour in a nitrogen stream using an infrared image furnace.
  • Example 5 Heated at 200 ° C.
  • the FET element is covered with poly (2,5-divinyl vinylene) and poly (para-phenylenevinylene), and the liquid crystal display Of these, the FEB element section 11 in FIG. 5 was completed.
  • the liquid crystal display unit 12 of the liquid crystal display device was completed. Further, a liquid crystal display device was completed in the same manner as in Example 5.
  • the device of the comparative example was produced according to the above-mentioned document (Appl. Phys. Lett., Vol. 49, p. 1210, 1986). In other words, 75 acetonitrile nozzles have 2,2'-dithiophene as monomers. 0.15 g of benzene was dissolved, 0.55 g of tetraethylammonium perchlorate was dissolved as an electrolyte, and this was used as a reaction solution.High-purity nitrogen gas was passed through the reaction solution. After sufficient degassing, the FET element substrate obtained in Example 1 was immersed in this.
  • a constant current 100 A Zcrf
  • a platinum electrode 10 X 20 mm
  • electrolytic polymerization a polysilicon film with a thickness of about 1400 A was obtained on the paired gold electrodes and on the silicon oxide film around the gold electrodes. Since a large amount of perchloric acid ion is doped into the polyolefin film at the same time as the electrolytic polymerization, the potential of the five pairs of gold electrodes is immediately saturated after the electrolytic polymerization. The voltage was set to 0 V to perform dedoping, and the poly- finin film was given conductivity similar to that of a semiconductor. The obtained FET device was washed twice with acetonitril, and then dried in a vacuum desiccator.
  • FIG. 6 shows the electrical characteristics of one of the five FET elements obtained in Example 1.
  • the horizontal axis is the Soviet Union over the scan 'de Rei down between the voltage (V D s) Der Ri vertical axis source over the scan-de Tray down between the current (I s) Ru Der.
  • V G gate voltage
  • I s hardly flows even if VD s increases, but large I s flows when a negative V c is applied.
  • V G gate voltage
  • I s hardly flows even if VD s increases, but large I s flows when a negative V c is applied.
  • areas where V D s is large saturation of I s was observed, and the electrical characteristics of a typical enhancement-type field-effect transistor were obtained.
  • the source-drain current can be greatly modulated by the applied gate voltage.
  • the characteristics in Fig. 6 are the characteristics of one of the five fabricated FET elements, but when the characteristics of the remaining FET elements were measured, the characteristics were almost the same as the characteristics in Fig. 6. showed that. When these elements were left in the air for about one month, and their electrical characteristics were measured again, the characteristics were hardly changed, and the elements obtained in this example had extremely high stability. Next, the electrical characteristics of one of the five FET elements obtained in Example 2 and the five FET elements obtained in Example 3 were found to be excellent. The electrical characteristics of one of the FET elements are shown in FIGS. 7 and 8, respectively.
  • the horizontal axis Resona over scan de Tray down voltage (V D s) Der the vertical axis represents source over scan 'de Tray down between current (I s) Ru der.
  • V G gate voltage
  • I Ni I'm flows large I s when the V D s is I s even One Do rather than size was applied ⁇ etc. flow of Iga, a negative VG You.
  • saturation of 1 s was observed, and the electrical characteristics of a typical enhancement-type effect-type transistor were obtained.
  • the source-drain current can be greatly modulated by the applied gate voltage. The characteristics shown in Figs.
  • FIG. 7 and 8 show the characteristics of the five FET elements fabricated in each example. Although the characteristics of one of the elements were measured, the characteristics of the remaining FET elements were also measured. The characteristics were almost the same as those in Figs. 7 and 8. Further, when these elements were left in the air for about one month, and their electrical characteristics were measured again, the characteristics were hardly changed, and the elements obtained in this example had extremely excellent stability. I understood.
  • FIG. 9 shows the electric characteristics of one of the five FET devices manufactured in Example 4 of the FET device.
  • the horizontal axis represents the source-drain distance between the source and the drain (VD s ), and the vertical axis represents the source-drain current (I s).
  • the electric characteristics of a typical enhancement-type field-effect transistor were obtained.
  • the source-to-drain current can be greatly modulated by the applied gate power E as compared to FIG. 6 of the first embodiment.
  • FIG. 10 shows the constant source-drain voltage of one of the five FET elements manufactured in Example 1 and Example 4 and the FET element manufactured in the comparative example. It shows the source-drain current-gate voltage characteristics under the condition of 50 V).
  • the horizontal axis represents Ri Ah at gate conductive E (V G)
  • the vertical axis represents Ru source over scan de Tray down between current (I s) der.
  • the source-drain current that can be modulated by the gate voltage is more than four digits.
  • the source / drain that can be modulated is used.
  • the gate-to-source current which can be modulated by the gate voltage, is only two and a half digits, while the in-current reaches five digits or more. .
  • the characteristics of the FET elements obtained in Examples 1 and 4 were greatly improved as compared with the conventional FET elements.
  • Fig. 11 shows one of the five FET elements fabricated in Example 2, one of the five FET elements fabricated in Example 3, and a comparative example.
  • the figure shows the source-drain current-gate voltage characteristics of the FET device under the condition of constant source-drain voltage (50 V).
  • the horizontal axis represents the gate voltage (V c) der is
  • the vertical axis represents source over scan de Rei down between current (I s) Ru der.
  • the source-drain current that can be modulated by the gate voltage in the FET devices obtained in the second and third embodiments.
  • the conventional FET device of the comparative example has only two and a half digits of the source-drain current that can be modulated by the gate voltage, while the current reaches four digits or more.
  • the characteristics of the FET devices obtained in Examples 2 and 3 were greatly improved as compared with the conventional FET device.
  • FIG. 12 shows the source-drain current-source-drain current when the gate voltage of the FET element in the liquid crystal display device obtained in Example 5 is changed.
  • FIG. 4 is a characteristic diagram illustrating voltage characteristics.
  • the horizontal axis represents the source-drain voltage (VDs)
  • the vertical axis represents the source-drain current (Is).
  • VDs source-drain voltage
  • Is source-drain current
  • a liquid crystal is connected between the transparent electrode 9 on the glass plate 10 of the liquid crystal display and the source electrode 5 of the F ⁇ element.
  • a sufficient voltage is applied for driving and a negative voltage is applied to the gate electrode 2
  • a voltage is applied to the liquid crystal display, and the liquid crystal 8 is oriented and the liquid crystal is aligned.
  • the display was driven, but when the gate voltage was set to 0 V, no voltage was applied to the liquid crystal display and the liquid crystal display stopped driving. That is, the driving of the liquid crystal could be controlled by the attached FET element using the 7 ⁇ -conjugated polymer film as the semiconductor layer. In terms of stability, the liquid crystal display device of this example operated stably even after one month or more.
  • FIG. 13 shows the source-drain current-source drain when the gate voltage of the F ⁇ element in the liquid crystal display device obtained in Example 6 was changed.
  • FIG. 4 is a characteristic diagram showing an inter-voltage characteristic.
  • the liquid crystal drive could be controlled by the attached FET device using the attached 7 ⁇ -conjugated polymer LB film as the semiconductor layer. Further, in terms of stability, the liquid crystal display device of this example operated stably even after more than one month.
  • FIG. 14 shows the current between the source and the drain when the gate voltage of the F ⁇ element in the liquid crystal display device obtained in Example 7 was changed, and the source and drain.
  • FIG. 4 is a characteristic diagram showing an inter-electrode voltage characteristic.
  • the horizontal axis shows the source-drain voltage (VDS), and the vertical axis shows the source-drain current (Is).
  • VDS source-drain voltage
  • Is source-drain current
  • Example 5 to 7 only one FET element and liquid crystal display section were manufactured to form a liquid crystal display device.However, a plurality of FET elements and liquid crystal display sections were manufactured using the same method to form a liquid crystal display. It can also be a device. However, in that case, processing such as patterning using a photo register is required.
  • the present invention relates to a field-effect transistor using an organic semiconductor and a liquid crystal display device using the same, and the field-effect transistor and the driving element using the same. Applied to liquid crystal display devices.

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Abstract

Transistor à effet de champ (élément FET) dans lequel un film polymère à conjugaison pi sert de couche semi-conductrice de l'élément. On produit ce transistor en préparant d'abord un film précurseur de polymère à conjugaison pi en utilisant un précurseur de polymère à conjugaison pi soluble dans un solvant et en transformant ensuite le film précurseur en un film à conjugaison pi. On obtient un dispositif d'affichage à cristaux liquides en utilisant les éléments FET en tant qu'éléments actifs de commande. On peut produire simultanément de manière économique un grand nombre d'éléments FET sur un substrat de surface étendue. Ces éléments présentent un fonctionnement stable, permettant de faire varier fortement le courant entre la source et le drain à l'aide de la tension de grille.
PCT/JP1990/000017 1989-01-10 1990-01-10 Transistor a effet de champ et dispositif d'affichage a cristaux liquides l'utilisant WO1990008402A1 (fr)

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WO1999010939A3 (fr) * 1997-08-22 1999-06-10 Koninkl Philips Electronics Nv Procede de fabrication d'un transistor a effet de champ constitue principalement de materiaux organiques
WO1999053371A1 (fr) * 1998-04-10 1999-10-21 E-Ink Corporation Afficheurs electroniques utilisant des transistors a effet de champ a base organique
WO2001015233A1 (fr) * 1999-08-24 2001-03-01 Koninklijke Philips Electronics N.V. Dispositif d'affichage
WO2001017040A1 (fr) * 1999-08-31 2001-03-08 E Ink Corporation Procede de recuit par solvant destine a la formation d'une couche mince de semiconducteur aux proprietes avantageuses
EP1179863A2 (fr) * 2000-08-10 2002-02-13 Matsushita Electric Industrial Co., Ltd. Dispositif électronique organique, méthode de sa fabrication et utilisation
JP2003086805A (ja) * 2001-09-07 2003-03-20 Ricoh Co Ltd 薄膜トランジスタ、電気絶縁膜及びそれらの製造方法
US6545291B1 (en) 1999-08-31 2003-04-08 E Ink Corporation Transistor design for use in the construction of an electronically driven display
US6603139B1 (en) 1998-04-16 2003-08-05 Cambridge Display Technology Limited Polymer devices
US7662009B2 (en) 2001-08-10 2010-02-16 Panasonic Corporation Organic electronic device, method of producing the same, and method of operating the same
JP2010237436A (ja) * 2009-03-31 2010-10-21 Nissha Printing Co Ltd 機器用隠蔽フィルム、それを使用する機器、及び、機器の被隠蔽部の隠蔽方法

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JPH01259564A (ja) * 1988-04-08 1989-10-17 Mitsubishi Electric Corp 電界効果型トランジスタ
JPH01259563A (ja) * 1988-04-08 1989-10-17 Mitsubishi Electric Corp 電界効果型トランジスタ

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JPS6376378A (ja) * 1986-09-18 1988-04-06 Mitsubishi Electric Corp 電界効果型トランジスタ
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JPH01259563A (ja) * 1988-04-08 1989-10-17 Mitsubishi Electric Corp 電界効果型トランジスタ

Cited By (15)

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Publication number Priority date Publication date Assignee Title
WO1999010939A3 (fr) * 1997-08-22 1999-06-10 Koninkl Philips Electronics Nv Procede de fabrication d'un transistor a effet de champ constitue principalement de materiaux organiques
WO1999053371A1 (fr) * 1998-04-10 1999-10-21 E-Ink Corporation Afficheurs electroniques utilisant des transistors a effet de champ a base organique
US6603139B1 (en) 1998-04-16 2003-08-05 Cambridge Display Technology Limited Polymer devices
WO2001015233A1 (fr) * 1999-08-24 2001-03-01 Koninklijke Philips Electronics N.V. Dispositif d'affichage
US6750473B2 (en) 1999-08-31 2004-06-15 E-Ink Corporation Transistor design for use in the construction of an electronically driven display
US6545291B1 (en) 1999-08-31 2003-04-08 E Ink Corporation Transistor design for use in the construction of an electronically driven display
US6312971B1 (en) 1999-08-31 2001-11-06 E Ink Corporation Solvent annealing process for forming a thin semiconductor film with advantageous properties
WO2001017040A1 (fr) * 1999-08-31 2001-03-08 E Ink Corporation Procede de recuit par solvant destine a la formation d'une couche mince de semiconducteur aux proprietes avantageuses
EP1179863A2 (fr) * 2000-08-10 2002-02-13 Matsushita Electric Industrial Co., Ltd. Dispositif électronique organique, méthode de sa fabrication et utilisation
EP1179863A3 (fr) * 2000-08-10 2006-01-18 Matsushita Electric Industrial Co., Ltd. Dispositif électronique organique, méthode de sa fabrication et utilisation
US7662009B2 (en) 2001-08-10 2010-02-16 Panasonic Corporation Organic electronic device, method of producing the same, and method of operating the same
JP2003086805A (ja) * 2001-09-07 2003-03-20 Ricoh Co Ltd 薄膜トランジスタ、電気絶縁膜及びそれらの製造方法
JP4704629B2 (ja) * 2001-09-07 2011-06-15 株式会社リコー 薄膜トランジスタ及びその製造方法
JP2010237436A (ja) * 2009-03-31 2010-10-21 Nissha Printing Co Ltd 機器用隠蔽フィルム、それを使用する機器、及び、機器の被隠蔽部の隠蔽方法
JP4629146B2 (ja) * 2009-03-31 2011-02-09 日本写真印刷株式会社 機器用隠蔽フィルム、それを使用する機器、及び、機器の被隠蔽部の隠蔽方法

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