CN1742343B - 有机存储单元及其驱动电路 - Google Patents

有机存储单元及其驱动电路 Download PDF

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CN1742343B
CN1742343B CN2004800027653A CN200480002765A CN1742343B CN 1742343 B CN1742343 B CN 1742343B CN 2004800027653 A CN2004800027653 A CN 2004800027653A CN 200480002765 A CN200480002765 A CN 200480002765A CN 1742343 B CN1742343 B CN 1742343B
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ofet
storage unit
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insulation course
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沃尔夫冈·克莱门斯
沃尔特·菲克斯
阿克塞尔·格尔特
安德烈亚斯·厄尔曼
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Pollick And AG Co GmbH
PolyIC GmbH and Co KG
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0009—RRAM elements whose operation depends upon chemical change
    • G11C13/0014—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
    • H10K19/80—Interconnections, e.g. terminals

Abstract

本发明涉及有机存储单元和其驱动电路。一种存储单元，包括至少一个有机场效应晶体管，所述有机场效应晶体管具有至少一个衬底，向所述衬底涂布有嵌入半导体层(3)中的源极/漏极电极(2)，在所述半导体层上设置有绝缘层(4)，其特征在于：至少有一个可双稳态转换的功能层，其诸如介电常数、电导率和/或磁导率的性能可以双稳态地转换。

Description

有机存储单元及其驱动电路
技术领域
本发明涉及一种有机存储单元及其驱动电路。
背景技术
例如在DE 10045192.6中公开了有机物基存储单元。
对于许多基于有机电子器件的应用，需要有机、一次写入或可重写存储器(例如，在RFID标签或在简单的电子游戏中)。最重要的，对于比如电子条形码或水印来说，非易失存储器是不可缺少的。
公知基于铁电材料的无源有机存储单元(Electronic Design，August 20，2001，page 56)(在该文献中提出了“聚合物铁电RAM”等)。这涉及到非易失的存储矩阵装配系统，还涉及由外部电路，优选为常规硅电路控制的系统。
这里的缺点为存储单元的控制，其通过外部电路操作。
发明内容
因此，本发明的一个目的是提供一种有机物基非易失存储单元，其在没有外部电路的情况下可读且可重复写。
本发明涉及一种存储单元，包括至少一个有机场效应晶体管，所述有机场效应晶体管具有至少一个衬底，向所述衬底涂布有嵌入半导体层(3)中的源极/漏极电极(2)，在所述半导体层上设置有绝缘层(4)，其特征在于：至少有一个可双稳态转换的功能层，其诸如介电常数、电导率和/或磁导率的性能可以双稳态地转换。
有机存储单元包括至少以下的功能层：(诸)下电极；绝缘体，可选地具有集成的存储材料；和上电极。
依据本发明的一个实施例，简单地通过增加施加到上电极的电压写入存储单元。
依据本发明的另一实施例，存储单元集成在有机场效应晶体管(OFET)中。
依据另一实施例，电容器组件充当存储器。
对于存储单元，需要一种材料，其中可以通过外部影响双稳态地转换某些性能(例如，电导率、介电常数或磁导率)，即，可以有效地传输至少两个状态且这些状态在时间上保持稳定。另外，有机存储单元包括进一步的元件，通过它可以读和改变双稳态材料的状态。优选地，读取不改变双稳态材料的状态。
附图说明
参考示出本发明的实施例的三个附图在以下更详细地描述本发明。
图1显示了集成在OFET中的存储器；
图2显示了充当存储器的电容器；和
图3显示了包括充当存储器的电容器的电路布置。
具体实施方式
在图1中，示意地示出OFET的横截面，其显示了例如聚酯膜的衬底1，向衬底1以有结构的形式涂布源极/漏极电极2。这可以例如通过印刷或光刻的方法执行。下电极2(源极/漏极)埋入半导体层3中，其被绝缘层4覆盖。这些层可以又通过印刷、刮刀涂布、离心沉积或喷涂涂布。由于一些其物理性能，诸如介电常数、电导率和/或磁导率可以双稳态转换的材料还具有绝缘特性，所以存储器可以与绝缘层4相同。在OFET组件中的层5则不需要且栅电极可以直接连接到绝缘层4。但是，另一方面，也可以存在附加的可选的非常薄的层5，其由双稳态转换材料构成且其位于绝缘层4下方或上方。最后，在双稳态转换材料的绝缘层4上或者附着于其的层5上设置上栅电极6。可以通过对源极/漏极电极施加电压读取双稳态转换层5的状态。通过对栅电极6施加电压可以编写(program)层5中的状态。
图2显示了如何使用电容器组件作为存储器：具有可变介电常数的介质层5夹在下电极2和上电极6之间。于是层5中具有可调介电常数的材料位于衬底1上两个导电层-下电极2和上电极6之间。介电常数可以通过高电压的方法转换。然后通过电容的充电电流判定存储状态，其当然依据介电常数为高或低。
所使用的具有可转换介电常数的材料可以是例如聚偏二氯乙烯(PVDC)或聚偏二氟乙烯(PVDF)。在这些材料的情况中，介电常数通过高电场转换。
图3显示了具有充当存储器的电容器的电路设置。该有机存储器单元或该有机电容存储器可以在不需要特殊材料的情况下利用以下电路实现：两个OFET 9、10串联连接，且电容器，或更准确地，存储电容器11与放电OFET10并联连接。充电OFET由9指示而放电OFET由10指示。供给电压施加到7和8。在7处供给电压低，而在8处供给电压高。可以通过向输入13施加短脉冲对电容器11充电，而向输入12施加短脉冲对电容器11放电。输入12连接到放电OFET 10且输入13连接到充电OFET 9。存储器的状态可以在存储单元的输出14查询，例如通过另一OFET的方法。
本发明涉及有机存储单元和其驱动电路。有机存储单元具有可双稳态转换材料的层或包括一个电路，在该电路中两个OFET串联连接且一个OFET与其低电势侧的电容器并联，使得电容器与放电OFET并联连接且通过第二OFET充电。
这里描述的有机存储单元的主要优点在于它们可以容易地纳入有机或聚合物电子电路中，因为它们构造简单，可以容易地集成入生产工艺中。生产工艺可以容易地组合。另一优点在于存储单元的控制简单，另一重要的优点为该存储单元是非易失的。

Claims (3)

1.一种非易失存储单元，具有至少一个有机场效应晶体管，所述存储单元包括：
在衬底上的嵌入有机半导体层中的源极/漏极电极，
在所述有机半导体层上的绝缘层，
在所述绝缘层上的栅电极层，
其特征在于：
所述绝缘层是功能层，该功能层包括显示可双稳态转换的介电常数性质的材料。
2.如权利要求1所述的存储单元，其中，所述功能层为所述有机场效应晶体管的绝缘层(4)。
3.如权利要求1或2所述的存储单元，其中，所述可双稳转换的功能层的介电常数是通过施加电势转换的。
CN2004800027653A 2003-01-29 2004-01-14 有机存储单元及其驱动电路 Expired - Fee Related CN1742343B (zh)

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EP1588375A2 (de) 2005-10-26
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US20070051940A1 (en) 2007-03-08
CA2515614A1 (en) 2004-08-12
ATE476739T1 (de) 2010-08-15
DE502004011477D1 (de) 2010-09-16
JP2006519483A (ja) 2006-08-24
WO2004068534A2 (de) 2004-08-12
EP1588375B1 (de) 2010-08-04
KR20050111582A (ko) 2005-11-25
KR100749126B1 (ko) 2007-08-13
MXPA05007878A (es) 2006-02-08

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