WO2003046922A3 - Halbleiteranordnung mit transistoren auf basis organischer halbleiter und nichtflüchtiger schreib-lese-speicherzellen - Google Patents

Halbleiteranordnung mit transistoren auf basis organischer halbleiter und nichtflüchtiger schreib-lese-speicherzellen Download PDF

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Publication number
WO2003046922A3
WO2003046922A3 PCT/DE2002/004235 DE0204235W WO03046922A3 WO 2003046922 A3 WO2003046922 A3 WO 2003046922A3 DE 0204235 W DE0204235 W DE 0204235W WO 03046922 A3 WO03046922 A3 WO 03046922A3
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WO
WIPO (PCT)
Prior art keywords
memory cells
write memory
semiconductor arrangement
organic semiconductors
volatile read
Prior art date
Application number
PCT/DE2002/004235
Other languages
English (en)
French (fr)
Other versions
WO2003046922A2 (de
Inventor
Guenter Schmid
Marcus Halik
Hagen Klauk
Original Assignee
Infineon Technologies Ag
Guenter Schmid
Marcus Halik
Hagen Klauk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies Ag, Guenter Schmid, Marcus Halik, Hagen Klauk filed Critical Infineon Technologies Ag
Priority to KR1020047007380A priority Critical patent/KR100633943B1/ko
Priority to JP2003548253A priority patent/JP2005510865A/ja
Priority to US10/495,614 priority patent/US7208823B2/en
Priority to EP02785070A priority patent/EP1444698A2/de
Publication of WO2003046922A2 publication Critical patent/WO2003046922A2/de
Publication of WO2003046922A3 publication Critical patent/WO2003046922A3/de

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
    • H10K19/80—Interconnections, e.g. terminals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02197—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides the material having a perovskite structure, e.g. BaTiO3
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
    • H01L21/31691—Inorganic layers composed of oxides or glassy oxides or oxide based glass with perovskite structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics

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  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Memories (AREA)
  • Thin Film Transistor (AREA)

Abstract

Die Erfindung betrifft eine Halbleiteranordnung, aufgebaut aus Transistoren, bei denen die Halbleiterstrecke aus einem organischem Halbleiter besteht, und auf einen ferroelektrischen Effekt vorzugsweise in einem Polymer beruhenden Speicherzellen zum Einsatz beispielsweise in RF-ID-Etiketten.
PCT/DE2002/004235 2001-11-16 2002-11-15 Halbleiteranordnung mit transistoren auf basis organischer halbleiter und nichtflüchtiger schreib-lese-speicherzellen WO2003046922A2 (de)

Priority Applications (4)

Application Number Priority Date Filing Date Title
KR1020047007380A KR100633943B1 (ko) 2001-11-16 2002-11-15 Ｒｆ-ｉｄ 태그
JP2003548253A JP2005510865A (ja) 2001-11-16 2002-11-15 有機半導体に基づくトランジスタおよび不揮発性リードライトメモリセルを含む半導体配置
US10/495,614 US7208823B2 (en) 2001-11-16 2002-11-15 Semiconductor arrangement comprising transistors based on organic semiconductors and non-volatile read-write memory cells
EP02785070A EP1444698A2 (de) 2001-11-16 2002-11-15 Halbleiteranordnung mit transistoren auf basis organischer halbleiter und nichtflüchtiger schreib-lese-speicherzellen

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10156470A DE10156470B4 (de) 2001-11-16 2001-11-16 RF-ID-Etikett mit einer Halbleiteranordnung mit Transistoren auf Basis organischer Halbleiter und nichtflüchtiger Schreib-Lese-Speicherzellen
DE10156470.8 2001-11-16

Publications (2)

Publication Number Publication Date
WO2003046922A2 WO2003046922A2 (de) 2003-06-05
WO2003046922A3 true WO2003046922A3 (de) 2003-08-14

Family

ID=7706068

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE2002/004235 WO2003046922A2 (de) 2001-11-16 2002-11-15 Halbleiteranordnung mit transistoren auf basis organischer halbleiter und nichtflüchtiger schreib-lese-speicherzellen

Country Status (8)

Country Link
US (1) US7208823B2 (de)
EP (1) EP1444698A2 (de)
JP (1) JP2005510865A (de)
KR (1) KR100633943B1 (de)
CN (1) CN1636249A (de)
DE (1) DE10156470B4 (de)
TW (1) TWI223462B (de)
WO (1) WO2003046922A2 (de)

Cited By (1)

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CN1742343B (zh) * 2003-01-29 2011-10-19 波尔伊克两合公司 有机存储单元及其驱动电路

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DE10200475A1 (de) * 2002-01-09 2003-07-24 Samsung Sdi Co Nichtflüchtiges Speicherelement und Anzeigematrizen daraus
DE102004025676B4 (de) * 2004-05-26 2008-09-04 Qimonda Ag Integrierter Halbleiterspeicher mit organischem Auswahltransistor
DE102004025675B4 (de) * 2004-05-26 2008-02-14 Qimonda Ag Integrierter Halbleiterspeicher mit organischem Auswahltransistor
NO321381B1 (no) * 2004-07-22 2006-05-02 Thin Film Electronics Asa Elektrisk viaforbindelse og tilknyttet kontaktanordning samt fremgangsmate til deres fremstilling
WO2006085600A1 (en) * 2005-02-10 2006-08-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
DE102005009511B3 (de) * 2005-02-24 2006-12-14 Infineon Technologies Ag Halbleiterspeichervorrichtung und Verfahren zur Herstellung einer Halbleiterspeichervorrichtung
KR100966302B1 (ko) * 2005-11-15 2010-06-28 서울시립대학교 산학협력단 메모리 장치
WO2007058436A1 (en) * 2005-11-15 2007-05-24 Iferro Co., Ltd. Memory device
KR100732294B1 (ko) * 2005-11-17 2007-06-25 주식회사 하이닉스반도체 불휘발성 강유전체 메모리를 포함하는 ｒｆｉｄ에서의 복조장치
WO2008007664A1 (fr) * 2006-07-11 2008-01-17 Takeda Pharmaceutical Company Limited Composé hétérocyclique bicycique et son utilisation
DE102006039927A1 (de) * 2006-08-25 2008-03-06 Printed Systems Gmbh Navigationsgerät
KR101201891B1 (ko) 2009-03-26 2012-11-16 한국전자통신연구원 투명 비휘발성 메모리 박막 트랜지스터 및 그의 제조 방법
US8558295B2 (en) 2009-08-25 2013-10-15 Electronics And Telecommunications Research Institute Nonvolatile memory cell and method of manufacturing the same
KR102273336B1 (ko) 2019-08-26 2021-07-06 충북대학교 산학협력단 Rf-id용 전자파 흡수체 및 이를 포함하는 장치

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Publication number Priority date Publication date Assignee Title
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Also Published As

Publication number Publication date
KR100633943B1 (ko) 2006-10-13
WO2003046922A2 (de) 2003-06-05
US7208823B2 (en) 2007-04-24
TWI223462B (en) 2004-11-01
EP1444698A2 (de) 2004-08-11
CN1636249A (zh) 2005-07-06
DE10156470B4 (de) 2006-06-08
KR20040053315A (ko) 2004-06-23
DE10156470A1 (de) 2003-05-28
US20050077606A1 (en) 2005-04-14
JP2005510865A (ja) 2005-04-21
TW200301974A (en) 2003-07-16

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