EP1444698A2 - Halbleiteranordnung mit transistoren auf basis organischer halbleiter und nichtflüchtiger schreib-lese-speicherzellen - Google Patents
Halbleiteranordnung mit transistoren auf basis organischer halbleiter und nichtflüchtiger schreib-lese-speicherzellenInfo
- Publication number
- EP1444698A2 EP1444698A2 EP02785070A EP02785070A EP1444698A2 EP 1444698 A2 EP1444698 A2 EP 1444698A2 EP 02785070 A EP02785070 A EP 02785070A EP 02785070 A EP02785070 A EP 02785070A EP 1444698 A2 EP1444698 A2 EP 1444698A2
- Authority
- EP
- European Patent Office
- Prior art keywords
- semiconductor
- semiconductor arrangement
- ferroelectric
- organic
- memory
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 82
- 230000015654 memory Effects 0.000 title claims abstract description 52
- 230000000694 effects Effects 0.000 claims abstract description 9
- 239000000463 material Substances 0.000 claims description 15
- 229920000620 organic polymer Polymers 0.000 claims description 6
- 239000011232 storage material Substances 0.000 claims description 6
- 150000004291 polyenes Chemical class 0.000 claims description 5
- 229920002981 polyvinylidene fluoride Polymers 0.000 claims description 5
- 239000004020 conductor Substances 0.000 claims description 4
- 229910010272 inorganic material Inorganic materials 0.000 claims description 3
- 239000011147 inorganic material Substances 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 2
- 239000012212 insulator Substances 0.000 claims description 2
- 239000011159 matrix material Substances 0.000 claims description 2
- 230000000295 complement effect Effects 0.000 claims 1
- 229920000642 polymer Polymers 0.000 abstract description 15
- 210000004027 cell Anatomy 0.000 description 21
- 239000000758 substrate Substances 0.000 description 18
- 238000000034 method Methods 0.000 description 13
- 238000005516 engineering process Methods 0.000 description 11
- 230000010287 polarization Effects 0.000 description 10
- 230000008569 process Effects 0.000 description 10
- 239000010410 layer Substances 0.000 description 9
- 238000003860 storage Methods 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000007639 printing Methods 0.000 description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 4
- 239000000123 paper Substances 0.000 description 4
- 239000002033 PVDF binder Substances 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 230000010354 integration Effects 0.000 description 3
- 230000000717 retained effect Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 239000004698 Polyethylene Substances 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- 239000004793 Polystyrene Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- MWPLVEDNUUSJAV-UHFFFAOYSA-N anthracene Chemical compound C1=CC=CC2=CC3=CC=CC=C3C=C21 MWPLVEDNUUSJAV-UHFFFAOYSA-N 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910001092 metal group alloy Inorganic materials 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229920003023 plastic Polymers 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229920000058 polyacrylate Polymers 0.000 description 2
- 229920002577 polybenzoxazole Polymers 0.000 description 2
- 229920000515 polycarbonate Polymers 0.000 description 2
- 239000004417 polycarbonate Substances 0.000 description 2
- 229920000728 polyester Polymers 0.000 description 2
- 229920000570 polyether Polymers 0.000 description 2
- -1 polyethylene Polymers 0.000 description 2
- 229920000573 polyethylene Polymers 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 229920002223 polystyrene Polymers 0.000 description 2
- 229920002635 polyurethane Polymers 0.000 description 2
- 239000004814 polyurethane Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- MIOPJNTWMNEORI-GMSGAONNSA-N (S)-camphorsulfonic acid Chemical compound C1C[C@@]2(CS(O)(=O)=O)C(=O)C[C@@H]1C2(C)C MIOPJNTWMNEORI-GMSGAONNSA-N 0.000 description 1
- MIZLGWKEZAPEFJ-UHFFFAOYSA-N 1,1,2-trifluoroethene Chemical group FC=C(F)F MIZLGWKEZAPEFJ-UHFFFAOYSA-N 0.000 description 1
- 229910001020 Au alloy Inorganic materials 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 229910000640 Fe alloy Inorganic materials 0.000 description 1
- 241001465754 Metazoa Species 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- 229910020684 PbZr Inorganic materials 0.000 description 1
- 239000004721 Polyphenylene oxide Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VNSWULZVUKFJHK-UHFFFAOYSA-N [Sr].[Bi] Chemical compound [Sr].[Bi] VNSWULZVUKFJHK-UHFFFAOYSA-N 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- WLPWBUSZWTZYTQ-UHFFFAOYSA-N amino(aminoazo)amine Chemical compound NNN=NN WLPWBUSZWTZYTQ-UHFFFAOYSA-N 0.000 description 1
- 230000006399 behavior Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000001913 cellulose Substances 0.000 description 1
- 229920002678 cellulose Polymers 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 230000003203 everyday effect Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 229920002457 flexible plastic Polymers 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000036541 health Effects 0.000 description 1
- 244000144980 herd Species 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 238000002372 labelling Methods 0.000 description 1
- 239000004922 lacquer Substances 0.000 description 1
- 239000002650 laminated plastic Substances 0.000 description 1
- QNZFKUWECYSYPS-UHFFFAOYSA-N lead zirconium Chemical compound [Zr].[Pb] QNZFKUWECYSYPS-UHFFFAOYSA-N 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 230000037230 mobility Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- IEQIEDJGQAUEQZ-UHFFFAOYSA-N phthalocyanine Chemical compound N1C(N=C2C3=CC=CC=C3C(N=C3C4=CC=CC=C4C(=N4)N3)=N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C4=N1 IEQIEDJGQAUEQZ-UHFFFAOYSA-N 0.000 description 1
- 239000002985 plastic film Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920000172 poly(styrenesulfonic acid) Polymers 0.000 description 1
- 229920000767 polyaniline Polymers 0.000 description 1
- 229920000128 polypyrrole Polymers 0.000 description 1
- 229940005642 polystyrene sulfonic acid Drugs 0.000 description 1
- 229920000123 polythiophene Polymers 0.000 description 1
- 150000004032 porphyrins Chemical class 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 108090000623 proteins and genes Proteins 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 210000000352 storage cell Anatomy 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- 150000004655 tetrazenes Chemical class 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
- H10K19/80—Interconnections, e.g. terminals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02197—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides the material having a perovskite structure, e.g. BaTiO3
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
- H01L21/31691—Inorganic layers composed of oxides or glassy oxides or oxide based glass with perovskite structure
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
Definitions
- the invention relates to a semiconductor arrangement which has at least one semiconductor device with a semiconductor path made of an organic semiconductor.
- the transponder technology uses a contactless reading or writing to a memory with a transmitter / receiver unit.
- the memory is part of a memory unit which is attached, for example, to an object about which certain information is stored in the memory.
- the circuit comprising the memory does not have its own power supply, but is instead supplied via an alternating electromagnetic field, via which the integrated circuit simultaneously communicates with the transmitter / receiver unit.
- Carrier frequencies of 125 kHz and 13.56 MHz are usually used for this. This technology is used to find and
- Identify buried and therefore inaccessible pipelines used to identify animals in large herds or also in access cards that allow their owners, for example, access to certain restricted areas.
- the microchips used in such systems are based on silicon as a semiconductor material.
- the manufacture of the memory unit which can be read out and possibly written with a transmitter / receiver, is therefore still comparatively complex and expensive, despite the advanced manufacturing methods.
- In the above mentioned application areas such costs do not fall into the weight Ge ⁇ because the storage unit remains or generally for a long time the object is used for high-priced goods.
- a whole range of application areas for transponder technology are conceivable, in which only a small amount of information is processed, etc., on the other hand, there is strong cost pressure, i.e. the storage units used hitherto for everyday use are being eliminated for cost reasons.
- RF-ID labels Radio Frequency Identification Tags
- the goods are provided with RF-ID labels on which information about the goods is stored. This information can be, for example, the price, the expiry date or the point of sale at which the goods are to be sold to the customer.
- the manufacturer can already provide the goods with all the necessary information based on an electronically incoming order, e.g. the price and the point of sale to which the goods are assigned. This further simplifies the logistics, since the goods e.g. can be assembled automatically and assigned to a retail outlet. In the retail outlet, savings can be made, for example in the checkout area.
- the information about the goods is transmitted to the cash register without contact.
- the cash register determines the price, automatically creates an invoice and balances the inventory.
- customers lose any time lost in the checkout area.
- the manufacturer can automatically report the need for new goods electronically.
- the price of an RF-ID label for the applications described above must not exceed that of a conventional barcode (barcode) label.
- the manufacturing costs must therefore be in the range of cents fractions. This results in the requirement that the RF-ID labels can be produced in a short amount of time and in large quantities.
- the label can be put.
- the label must have properties such as high robustness or low weight in order to be able to be processed without problems or great flexibility in order to be able to be attached to curved surfaces such as the surface of a bottle. Silicon chips can indeed be produced in very thin layers, so that they become flexible. However, these methods are also very complex and expensive, so that they are eliminated for the applications described.
- the requirements placed on the RF-ID label with regard to the storage quantity and storage density are comparatively low for the applications described above.
- a semiconductor arrangement which comprises at least one semiconductor device with a semiconductor path composed of at least one organic semiconductor and which has at least one rewritable memory cell based on a ferroelectric effect in a memory material.
- the solution according to the invention uses organic semiconductor technology, which enables the manufacture of integrated circuits in an extremely cost-effective manner, for example with the aid of printing techniques.
- organic semiconductor technology currently does not allow the integration density to be as high as is possible with silicon semiconductor technology, this integration density is also not necessary for the applications described above, since only small amounts of information have to be processed and a comparatively large area for the circuit arrangement to Is available, for example on the back of a bottle label.
- Organic semiconductor technology is combined with a storage medium that is based on a ferroelectric effect. After the memory has been written with the necessary information, no further power supply is required for information retention.
- the information is also retained over the periods of time required for the applications described above, that is to say, for example, a period between a description of the store by the manufacturer of the goods and a reading out of the information at the cash register of the retail outlet.
- Organic semiconductors have charge carrier mobilities in the range of approximately 0.1-1 cm 2 / Vs. This allows the construction of all components and circuits necessary for RF-ID systems with semiconductor devices based on organic semiconductors.
- the information to be stored can be written into or read from the memory without contact.
- the transmission of information from and to the memory is basically the same way.
- programming can advantageously also be carried out only after the label has been applied to an object to be identified.
- a product at the end of the production line can already be assigned to a specific retail outlet for the incoming orders and thus the further sales channels can be determined with the highest possible topicality, without the need for large-scale storage, for example.
- the memory cells are based on a ferroelectric effect, the memory cells can preferably be designed as read-write memories. The stored information can then be changed and updated at any time.
- Storage materials suitable for the semiconductor arrangement according to the invention are those in which a ferroelectric effect is sufficiently pronounced to be able to detect two different polarization states without great effort.
- An organic polymer with ferroelectric properties is particularly preferably used as the storage material.
- Ferroelectric polymers can be processed using the simple and inexpensive processes that are usually used in organic semiconductor technology and can also be applied to a substrate, for example, by printing processes. In particular on flexible substrates, these materials prove to be robust against bending and twisting of the substrate.
- the inertia with which the polarization of the ferroelectric polymer follows the programming voltage is generally sufficiently low for the intended applications.
- ferroelectric effect required for the memory cell is largely independent of the material used for the electrodes with which the programming voltage is conveyed to the ferroelectric polymer.
- the use of ferroelectric organic polymers as the storage medium of a storage cell therefore hardly restricts the choice of materials for the electrodes. So far, all investigations of the ferroelectric behavior of polymers have been carried out on simple, mostly isolated layer systems.
- a memory cell based on a ferroelectric effect in connection with a control and addressing circuit implemented with transistors, which have a semiconductor path made of an organic semiconductor, has not previously been demonstrated.
- the electrical conductivity of the polymer is influenced by the state of polarization.
- the two states of conductivity can be used to define a binary data content of a memory cell.
- Such organic polymers with ferroelectric properties are, for example, fluorinated polyenes.
- Switching of the polarization and thus a change in the conductivity of the polymer is achieved by switching the polarity of a programming voltage which generates an electric field in the polymer. After the programming voltage has decayed, the conductivity previously set by the programming voltage is retained. Only by applying a programming voltage (coercive voltage) which is opposite in polarity to the first programming voltage, which is in the polymer generated electric field, which is greater in magnitude than the coercive field strength of the polymer, the conductivity of the polymer changes its state.
- a programming voltage coercive voltage
- the stored information is preferably read out in such a way that a charge, or a quantity derived therefrom, is measured, which is required in order to bring about a polarization reversal of the ferroelectric.
- This charge depends on the pre-polarization of the ferroelectric. This means that the reading process is destructive.
- all the memory cells or ferro capacitors have the same polarization. If the information is to be retained, the memory content must be written back into the ferro capacitor after the reading process. This can be done immediately after the reading process or at a later time.
- the memory content can be buffered, for example in a normal capacitor memory or a flip-flop, or two ferroelectric memory areas are used alternately. This is particularly advantageous in the RF-ID case, in which the information is read out without contact, since the information is not lost in the event of a voltage drop.
- fluorinated polyenes those based on PVDF (polyvinylidene difluoride) and in particular the copolymer with trifluoroethylene (PVDF-PTrFE; 70:30) have proven to be particularly suitable.
- PVDF polyvinylidene difluoride
- PVDF-PTrFE copolymer with trifluoroethylene
- Other suitable polyenes are described, for example, in T.T. Wang, J.M. Herbst, A.M. Glass, "The Applications of Ferroelectric Polymers", ISBN 0-412-01261-8.
- the inertia with which the polarization follows the programming voltage is sufficiently low at 10 - 100 ⁇ s for PVDF polymers for the intended applications. PVDF polymers are robust against bending and twisting and are therefore also suitable for application to flexible substrates.
- inorganic ferroelectric materials can also be used as storage material.
- a class of suitable ferroelectric inorganic materials that can be used as storage materials are ferroelectric tantalates and titanates, such as strontium bismuth tantalate (SBT) or lead zirconium titanates (PZT, PbZr x Ti ⁇ - x 0 3 ).
- the semiconductor arrangement has semiconductor devices which functionally supplement the semiconductor arrangement to form an RF-ID label.
- Semiconductor arrangements with organic active semiconductor devices and memory cells are preferably applied to flexible substrates. If the active and passive semiconductor devices, memory cells and conductor tracks built up in thin layers on the substrate are also made of flexible, robust materials, a mechanical structure is created which in turn can be easily applied to curved surfaces.
- Flexible foils made of metals and metal alloys, such as copper, nickel, gold and iron alloy, are suitable as substrates. gene, from cellulose, such as paper, and from plastics such as polystyrene, polyethylene, polyurethane, polycarbonates, polyacrylates, polyimides, polyethers and polybenzoxazoles.
- inexpensive substrates such as paper
- the size and space requirement of a memory cell are not critical. Since essential properties of the memory cell can be influenced via the area of the memory cell, an additional degree of freedom for the design of the memory cell is obtained by using inexpensive substrates.
- P-Halbles are preferably suitable as the material for the semiconductor path in the semiconductor devices based on organic semiconductors . Iter based on condensed aromatics, such as anthracene, tetrazene, pentazene, polythiopenes, such as poly-3-alkylthiopenes, polyvinylthiopene, and polypyrroles. Organometallic complexes of phthalocyanine or porphyrin can also be used.
- the semiconductor device used in the semiconductor arrangement according to the invention is, for example, an organic transistor, in particular an organic field effect transistor, with which, for example, the memory cell can be switched between two states.
- the semiconductor path is the layer of an organic semiconductor arranged between the source and drain electrodes, the electrical conductivity of which is controlled by the field of a gate electrode.
- the semiconductor arrangement itself and / or the active and passive semiconductor devices based on organic semiconductors have, due to their function, insulator layers made of a dielectric. Both inorganic and organic dielectrics are possible. Dielectrics, which due to their stability and robustness are particularly suitable for arrangements on substrates, are silicon dioxide and silicon nitride. Both materials can be used as in MG Kane, H. Klauk et al; "Analog and Digital Circuits Using Organic Thin-Film Transistors on Polyester Substrates "IEEE Electron Device Letters Vol. 21 No. 11 534 (2000) and DJ Gundlach, H. Klauk et al.” High-Mobility, Low Voltage Organic Thin Film Transistors "International Electron Devices Meeting, December (1999) shown, integrate in semiconductor devices of the type according to the invention.
- polystyrene, polyethylene, polyester, polyurethane, polycarbonate, polyacrylate, polyimide, polyether and polybenzoxazole are also particularly suitable.
- organic semiconductors doped for cost-critical applications such as polyaniline doped with camphor sulfonic acid or polythiophenes doped with polystyrene sulfonic acid, which can be deposited using simple and inexpensive printing processes, can be provided.
- metals or metal alloys with a low specific resistance are preferred, i.e. palladium, gold, platinum, nickel, copper, titanium and aluminum.
- the electrical field strengths or programming voltages required for switching the polarization lie in a range which overlaps with a working range of transistors based on organic semiconductors.
- a necessary signal swing for write and read voltages is scalable over the area of the memory cell and can thus be adapted to the properties of addressing and control transistors.
- the memory cells in a memory are addressed by selection transistors. This type of addressing can be used Realize faster, more specific and interference-free access to the memory cell.
- the addressing takes place via a passive matrix, as is e.g. is described in the patent US 6055180.
- the selection transistor otherwise assigned to each memory cell is omitted. This leads to a particularly simple construction of a memory.
- the semiconductor arrangement according to the invention can be produced from comparatively easily accessible materials with the aid of inexpensive processes, for example printing techniques.
- the semiconductor arrangement according to the invention is therefore particularly suitable for applications in which information is stored inexpensively over a period of up to several months.
- the invention therefore also relates to a label comprising a substrate, an attachment layer and at least one semiconductor arrangement provided on the substrate, as described above.
- Suitable substrates are, for example, paper or a thin flexible plastic film, on one side of which the semiconductor arrangement according to the invention is applied, for example by printing.
- An adhesive layer can then be applied to the semiconductor arrangement according to the invention, optionally separated by a protective layer, as an attachment layer, with the aid of which the label is attached to an object.
- the semiconductor arrangement according to the invention is shielded against mechanical influences which could cause destruction.
- Areas of application for such labels are, for example, the labels already mentioned at the beginning for the labeling of goods or, for example, also electronic stamps, the value of which is stored on the stamp when sold.
- the memory content is advantageously read destructively, ie the memory content is no longer written back after reading. In this way, for example, stamps can be canceled at the same time as their value is read out.
- chip cards comprising a substrate and at least one semiconductor arrangement provided on the substrate, as described above.
- Such chip cards are independently marketable and can be used, for example, as telephone cards or discount cards. With phone cards, a certain value is saved when purchasing, which is then gradually canceled by the readout process.
- a material which has a higher mechanical strength than is required for the label described above is suitably used as the substrate.
- a substrate made of cardboard or a plastic laminate is suitable.
- the semiconductor arrangement according to the invention is then suitably embedded between two paper or plastic layers in order to protect it from mechanical influences. Alternatively, protection by a layer of lacquer is also conceivable.
- the chip card described is particularly suitable for applications which are under very high cost pressure and in which only a limited period of use is required, but it is also possible to have a design which enables use over longer periods of time, for example as a bank card, credit card or health insurance card ,
- the label described above and the chip card described above are preferably designed in such a way that the stored information can be written in or read out without contact.
- a contact for writing and reading out the memory is provided, which is contacted for writing / reading out with a corresponding contact of a read / write device.
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- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Theoretical Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mathematical Physics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
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Abstract
Description
Claims
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10156470A DE10156470B4 (de) | 2001-11-16 | 2001-11-16 | RF-ID-Etikett mit einer Halbleiteranordnung mit Transistoren auf Basis organischer Halbleiter und nichtflüchtiger Schreib-Lese-Speicherzellen |
DE10156470 | 2001-11-16 | ||
PCT/DE2002/004235 WO2003046922A2 (de) | 2001-11-16 | 2002-11-15 | Halbleiteranordnung mit transistoren auf basis organischer halbleiter und nichtflüchtiger schreib-lese-speicherzellen |
Publications (1)
Publication Number | Publication Date |
---|---|
EP1444698A2 true EP1444698A2 (de) | 2004-08-11 |
Family
ID=7706068
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP02785070A Withdrawn EP1444698A2 (de) | 2001-11-16 | 2002-11-15 | Halbleiteranordnung mit transistoren auf basis organischer halbleiter und nichtflüchtiger schreib-lese-speicherzellen |
Country Status (8)
Country | Link |
---|---|
US (1) | US7208823B2 (de) |
EP (1) | EP1444698A2 (de) |
JP (1) | JP2005510865A (de) |
KR (1) | KR100633943B1 (de) |
CN (1) | CN1636249A (de) |
DE (1) | DE10156470B4 (de) |
TW (1) | TWI223462B (de) |
WO (1) | WO2003046922A2 (de) |
Families Citing this family (16)
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DE10200475A1 (de) * | 2002-01-09 | 2003-07-24 | Samsung Sdi Co | Nichtflüchtiges Speicherelement und Anzeigematrizen daraus |
CN1742343B (zh) * | 2003-01-29 | 2011-10-19 | 波尔伊克两合公司 | 有机存储单元及其驱动电路 |
DE102004025676B4 (de) * | 2004-05-26 | 2008-09-04 | Qimonda Ag | Integrierter Halbleiterspeicher mit organischem Auswahltransistor |
DE102004025675B4 (de) * | 2004-05-26 | 2008-02-14 | Qimonda Ag | Integrierter Halbleiterspeicher mit organischem Auswahltransistor |
NO321381B1 (no) * | 2004-07-22 | 2006-05-02 | Thin Film Electronics Asa | Elektrisk viaforbindelse og tilknyttet kontaktanordning samt fremgangsmate til deres fremstilling |
CN101943667B (zh) * | 2005-02-10 | 2013-06-19 | 株式会社半导体能源研究所 | 半导体器件 |
DE102005009511B3 (de) * | 2005-02-24 | 2006-12-14 | Infineon Technologies Ag | Halbleiterspeichervorrichtung und Verfahren zur Herstellung einer Halbleiterspeichervorrichtung |
KR100966302B1 (ko) * | 2005-11-15 | 2010-06-28 | 서울시립대학교 산학협력단 | 메모리 장치 |
WO2007058436A1 (en) * | 2005-11-15 | 2007-05-24 | Iferro Co., Ltd. | Memory device |
KR100732294B1 (ko) * | 2005-11-17 | 2007-06-25 | 주식회사 하이닉스반도체 | 불휘발성 강유전체 메모리를 포함하는 rfid에서의 복조장치 |
JPWO2008007664A1 (ja) * | 2006-07-11 | 2009-12-10 | 武田薬品工業株式会社 | 二環性複素環化合物およびその用途 |
DE102006039927A1 (de) * | 2006-08-25 | 2008-03-06 | Printed Systems Gmbh | Navigationsgerät |
KR101201891B1 (ko) | 2009-03-26 | 2012-11-16 | 한국전자통신연구원 | 투명 비휘발성 메모리 박막 트랜지스터 및 그의 제조 방법 |
US8558295B2 (en) * | 2009-08-25 | 2013-10-15 | Electronics And Telecommunications Research Institute | Nonvolatile memory cell and method of manufacturing the same |
CN109980014B (zh) * | 2019-03-26 | 2023-04-18 | 湘潭大学 | 一种后栅极铁电栅场效应晶体管及其制备方法 |
KR102273336B1 (ko) | 2019-08-26 | 2021-07-06 | 충북대학교 산학협력단 | Rf-id용 전자파 흡수체 및 이를 포함하는 장치 |
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2001
- 2001-11-16 DE DE10156470A patent/DE10156470B4/de not_active Expired - Fee Related
-
2002
- 2002-11-15 KR KR1020047007380A patent/KR100633943B1/ko not_active IP Right Cessation
- 2002-11-15 CN CNA028228464A patent/CN1636249A/zh active Pending
- 2002-11-15 JP JP2003548253A patent/JP2005510865A/ja active Pending
- 2002-11-15 EP EP02785070A patent/EP1444698A2/de not_active Withdrawn
- 2002-11-15 TW TW091133503A patent/TWI223462B/zh not_active IP Right Cessation
- 2002-11-15 US US10/495,614 patent/US7208823B2/en not_active Expired - Fee Related
- 2002-11-15 WO PCT/DE2002/004235 patent/WO2003046922A2/de active Application Filing
Non-Patent Citations (1)
Title |
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See references of WO03046922A2 * |
Also Published As
Publication number | Publication date |
---|---|
JP2005510865A (ja) | 2005-04-21 |
US20050077606A1 (en) | 2005-04-14 |
CN1636249A (zh) | 2005-07-06 |
TW200301974A (en) | 2003-07-16 |
KR100633943B1 (ko) | 2006-10-13 |
WO2003046922A3 (de) | 2003-08-14 |
DE10156470A1 (de) | 2003-05-28 |
TWI223462B (en) | 2004-11-01 |
US7208823B2 (en) | 2007-04-24 |
DE10156470B4 (de) | 2006-06-08 |
WO2003046922A2 (de) | 2003-06-05 |
KR20040053315A (ko) | 2004-06-23 |
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