CN1374705A - 薄膜晶体管基片及其制造方法 - Google Patents

薄膜晶体管基片及其制造方法 Download PDF

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CN1374705A
CN1374705A CN01125878A CN01125878A CN1374705A CN 1374705 A CN1374705 A CN 1374705A CN 01125878 A CN01125878 A CN 01125878A CN 01125878 A CN01125878 A CN 01125878A CN 1374705 A CN1374705 A CN 1374705A
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佐藤健史
高桥卓也
加藤智也
金子寿辉
池田一
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Panasonic Liquid Crystal Display Co Ltd
Japan Display Inc
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Abstract

在有自对准LDD的多晶硅薄膜晶体管基片上,用W浓度为重量5%以上不到25%,更希望用W浓度为重量17%到22%的Mo－W合金制作栅极,用包括磷酸浓度为重量60%到70%的刻蚀溶液的湿刻蚀工序的方法制作的薄膜晶体管基片有均匀的特性并有优越的生产性。

Description

薄膜晶体管基片及其制造方法
技术领域
本发明涉及有源矩阵驱动型液晶显示装置，和用于有机发光元件等的自发光型显示元件的薄膜晶体管基片，特别是涉及用低温多晶硅技术的薄膜晶体管基片及其制造方法。
背景技术
在液晶显示装置中，通过用可以在玻璃的耐热温度以下的比较低的温度下形成的多晶硅膜的薄膜晶体管，在基片上形成没有象素开关的电路削减部件数目，实现低成本化。为了提高在用多晶硅膜的薄膜晶体管中的可靠性，特别是在N型薄膜晶体管中，在源极，漏极和栅极之间设置为低浓度掺杂区域的LDD(轻掺杂漏极)。作为相对栅极位置不偏离地形成LDD的方法，在日本平成5年公开的5-152325号专利公报中，已经揭示了对构成栅极的导电膜进行侧面腐蚀加工，使栅极形成从抗蚀剂后退的形状，在后退区域下部的半导体膜上，相对栅极自对准地形成LDD的方法。
又，在液晶显示装置中，要求构成栅极的导电膜有低电阻性，以便即便用同一个膜作为用于扫描信号的配线，也能够降低传输给配线的信号延迟。在用多晶硅膜作为半导体膜的薄膜晶体管的液晶显示装置中，因为是在高温下激活掺杂剂，所以也要求栅极有耐热性。在日本平成11年公开的11-163366号专利公报中，已经揭示了用电阻低耐热性优越的钼(Mo)和钼与钨(W)的合金(以下简称为Mo-W合金)作栅极，通过包含抗蚀剂灰化的工序，形成有自对准地形成的LDD的薄膜晶体管的例子。
关于由Mo-W合金构成的薄膜晶体管的栅极加工，能够用干刻蚀法或湿刻蚀法，但是刻蚀速率较大的湿刻蚀法从生产的观点来看是有利的。然而，例如在日本平成10年公开的10-247733号专利公报中已经揭示了在Mo合金的湿刻蚀中，与刻蚀时搅拌溶液等条件有关在膜表面上形成钝化膜，使刻蚀速率变化的情形。因此，在用湿刻蚀法对Mo-W合金膜进行侧面腐蚀，在栅极从抗蚀剂后退的部位上自对准地形成LDD的制造工序中，存在反映刻蚀速率变化的侧面腐蚀长度使LDD长度变得不均匀，从而使薄膜晶体管的特性变得不均匀，成品率下降的问题。
发明内容
本发明的目的是提供生产性优越并具有均匀特性的薄膜晶体管基片及其制造方法。
本发明提供薄膜晶体管基片，该薄膜晶体管基片的特征是它是形成具有在透明绝缘性基片上形成由结晶硅构成的半导体膜，通过栅绝缘膜在半导体膜上形成由金属膜构成的栅极，以及夹着栅极由掺杂半导体膜形成的源极和漏极，并且在栅极一端具有用与源极和漏极相同类型的掺杂剂以比源极和漏极低的浓度进行掺杂的LDD区域的共面型薄膜晶体管的薄膜晶体管基片，
上述栅极由用Mo作为主成分，包含重量5％以上不到25％的W的单层金属膜构成。
本发明还提供包括用含有重量60％以上70％以下的磷酸的刻蚀剂液对栅极进行加工的工序，形成上述中记载的薄膜晶体管基片的制造方法。
附图说明
图1是表示根据本发明的薄膜晶体管基片制造工序的第1实施例的截面图。
图2是表示根据本发明的薄膜晶体管基片制造工序的第1实施例的截面图。
图3是表示Mo-W合金膜的侧面腐蚀长度与刻蚀溶液组成关系的一个例子的图。
图4是表示Mo-W合金的侧面腐蚀长度与膜组成关系的一个例子的图。
图5是表示根据本发明的薄膜晶体管基片的第2实施例的图。
图6是表示根据本发明的薄膜晶体管基片的第2实施例的截面图。
图7是表示根据本发明的薄膜晶体管基片制造工序的第3实施例的图。
图8是表示根据本发明的薄膜晶体管基片制造工序的第3实施例的截面图。
图9是表示根据本发明的薄膜晶体管基片制造工序的第3实施例的截面图。
图10是表示根据本发明的薄膜晶体管基片制造工序的第3实施例的截面图。
图11是表示根据本发明的薄膜晶体管基片制造工序的第3实施例的截面图。
图12是表示根据本发明的薄膜晶体管基片制造工序的第3实施例的截面图。
图13是表示根据本发明的薄膜晶体管基片制造工序的第3实施例的截面图。
具体实施方式
本发明者们研讨了Mo-W合金的湿刻蚀方法，结果发现通过用磷酸浓度为重量60％以上到70％以下的刻蚀溶液对浓度为重量5％到25％，最好为17％到22％范围内的Mo-W合金膜进行刻蚀，能够抑制由于Mo-W合金的侧面腐蚀引起的后退量的变化。
所以，作为本发明用于解决问题的方法，它的第1特征是用含W浓度为重量5％到25％的Mo-W合金制作栅极。
又，它的第2特征是用含W浓度为重量17％到22％的Mo-W合金制作栅极。
又，它的第3特征是包括用含磷酸浓度为重量60％以上70％以下的刻蚀溶液对由含W浓度为重量5％到25％的Mo-W合金构成的导电膜进行刻蚀加工形成栅极的工序。
我们用下面记载的实施例说明本发明的上述特征和其它的特征，但是本发明不限定于这些实施例是不言而喻的。
实施例1
图1和图2表示本发明实施形态中的薄膜晶体管基片制造方法的第1实施例。通过用于阻断来自玻璃基片的杂质的由SiN构成的基底膜2和由SiO2构成的基底膜3，在作为透明绝缘基片的玻璃基片1上形成多晶硅膜4。多晶硅膜是用等离子CVD形成非晶硅膜，在400℃以下退火进行脱氢处理后，通过脉冲准分子激光退火形成结晶化。
用光刻法将多晶硅膜加工成岛状后，通过用TEOS(四乙氧基硅烷)的等离子CVD法，淀积成为栅绝缘膜5的SiO2膜。进一步，通过用Mo-W合金构成靶的溅射法将由Mo-W合金构成的导电膜6淀积到150nm的厚度。用W浓度为重量20％的Mo-W合金。涂敷正型抗蚀剂，用光刻法制作布线图案，形成图1所示的抗蚀剂7。用含磷酸浓度为重量65％的刻蚀溶液，对由Mo-W合金构成的导电膜6进行湿刻蚀，使由导电膜6构成的栅极形成从抗蚀剂7后退的形状。通过控制刻蚀时间使侧面腐蚀长度8形成1μm的厚度。将抗蚀剂7用作掩模，通过栅绝缘膜以每平方厘米1×1015的剂量将磷离子注入多晶硅膜4。除去抗蚀剂后，如图2所示，以每平方厘米1×1013的剂量低浓度地注入磷离子时，在图1中的栅极从抗蚀剂后退的区域中，在栅极12上自对准地形成掺杂低浓度磷的LDD区域11。通过600℃以下的热退火或RTA(快速热退火)，激活注入的磷离子，得到在栅极上自对准地形成LDD的N型薄膜晶体管。在图1中，9是漏极，10是源极。
此外，图1，图2表示形成N型薄膜晶体管的实施例，但是代替磷用硼作为注入离子，也能够制成自对准地形成LDD的P型薄膜晶体管。通过形成LDD无论是P型薄膜晶体管还是N型薄膜晶体管都一样能提高可靠性并降低截止电流。因为P型薄膜晶体管对于电流驱动的耐久性比N型薄膜晶体管高，所以适合于由用有机膜的发光元件制成的显示装置等的电流驱动型显示装置。
又，在本发明的薄膜晶体管基片的制造工序中，因为也可以对用于栅极的由Mo和W组成的Mo-W合金进行干刻蚀加工，所以关于LDD的形成，除了利用湿刻进行侧面腐蚀的方法外，也能够通过抗蚀剂图案的灰化利用缩小，只用干刻蚀形成的方法等众所周知的方法。
图3表示W浓度为重量20％(约12％的原子)的Mo-W合金膜的侧面腐蚀长度与刻蚀溶液的磷酸浓度关系的一个例子。作为刻蚀溶液在磷酸中添加硝酸，醋酸和水，通过改变磷酸和水的比例对磷酸浓度进行调整。无论哪种情形都固定刻蚀时间进行刻蚀处理。侧面腐蚀长度与磷酸浓度有关，其最大值随着磷酸量的增加而减小。又，侧面腐蚀长度在处理后的基片面内一般地有某种分布。分布的宽度，例如刻蚀溶液的磷酸浓度为重量55％时侧面腐蚀长度从最小0.5μm到最大2.5μm以上，磷酸浓度为重量65％时侧面腐蚀长度从最小0.8μm到最大0.9μm，磷酸浓度为重量75％时侧面腐蚀长度从0μm到0.5μm。如图3所示，用磷酸浓度为重量60％以下或重量70％以上的刻蚀溶液，侧面腐蚀长度的分布增大。用磷酸浓度为重量60％以下的刻蚀溶液，可以推测出由于磷酸量的减少在Mo合金表面上容易形成钝化膜，形成刻蚀速度小的区域，侧面腐蚀长度的散乱变大。另一方面，磷酸浓度为重量70％以上的刻蚀溶液，可以推测出由于粘度变大，难以向基片上均匀地供给刻蚀溶液，所以刻蚀时间在基片上变得不均匀，侧面腐蚀长度的分布变大。所以，为了进行侧面腐蚀长度在面内分布小的刻蚀，希望磷酸浓度为重量60％以上70％以下。通过刻蚀溶液的磷酸浓度在重量60％到70％范围内进行加工，侧面腐蚀长度拉长，薄膜晶体管的LDD长度变得均匀了，提高了薄膜晶体管特性的均匀性。在图3的例子中，用磷酸浓度为重量65％的刻蚀溶液，在基片内能够得到±10％以下的侧面腐蚀长度的精度。此外，在图3中，表示了W浓度为重量20％的膜的结果，但是即便在改变W浓度的情形中，侧面腐蚀长度的绝对值是不同的，用磷酸浓度为重量60％到70％范围内的刻蚀溶液进行加工时，侧面腐蚀长度变得均匀了，用磷酸浓度为重量60％以下70％以上的刻蚀溶液时，同样倾向于增大侧面腐蚀长度的分布。
除了刻蚀溶液的磷酸浓度外，也可以通过刻蚀时间来调整侧面腐蚀长度。但是，增加刻蚀时间使生产性下降。又，在用于生产的刻蚀装置中，一般可以在装置上设定刻蚀时间的下限，不能用下限以下的刻蚀时间。从而，希望能够用适当长的时间进行刻蚀处理。在生产上适当的刻蚀时间中，可以形成的侧面腐蚀长度与Mo-W合金膜的组成关系的一个例子如图4所示。Mo-W合金膜的厚度为150nm时，用磷酸浓度为重量60％到70％的刻蚀溶液，能够得到均匀的侧面腐蚀长度。W浓度为重量5％以下的Mo-W合金膜，刻蚀过大，在装置上设定的可能的刻蚀时间范围内不能形成2μm以下的侧面腐蚀长度。另一方面，随着W浓度的增加，刻蚀速率减小，也减少了可以形成的侧面腐蚀长度的范围。W浓度为重量17％时可以形成0.6～2μm范围的侧面腐蚀长度，W浓度为重量22％时可以形成0.3～1.3μm范围的侧面腐蚀长度。又，因为W浓度为重量30％以上的Mo-W合金膜的刻蚀速度很小，所以在生产上适当的刻蚀时间的上限中可以形成的侧面腐蚀长度在0.3μm以下。
当薄膜晶体管的LDD的长度在2μm以上时，由于LDD的附加电阻，晶体管的截止电流降低到没有LDD时的一半以下。又，LDD的长度比0.3μm小时，在栅极端的电场平缓不充分，薄膜晶体管的耐压减小，并且截止电流增大。所以，我们希望LDD的长度在0.3μm到2μm的范围内。用W浓度为重量5％以上不到30％的Mo-W合金膜作栅极，通过用含磷酸浓度为重量60％到70％的刻蚀溶液进行加工，得到对于LDD有适当长度的侧面腐蚀长度。但是，在实际的制造工序中，存在刻蚀溶液组成变化等的条件变化。在W浓度为重量25％以上的Mo-W合金膜中，连续进行刻蚀处理时，刻蚀速率下降，即便在生产上可能的最大刻蚀时间中进行处理，也已经判明存在侧面腐蚀长度在0.3μm以下的担心。所以，我们希望制作栅极的Mo-W合金膜的W浓度比重量25％小。用W浓度为重量5％以上不到25％的Mo-W合金膜制作栅极时，能够稳定地得到对于LDD长度适当的0.3μm到2μm的侧面腐蚀长度，能够制造出生产性好的能均匀地形成特性良好的薄膜晶体管的薄膜晶体管基片。
又，用磷酸浓度为重量60％到70％的刻蚀溶液，在生产上适当的时间内对W浓度为重量17％到22％的Mo-W合金进行刻蚀处理时，侧面腐蚀长度不小于0.3μm，又不大于是2μm。从而，因为对于侧面腐蚀长度的刻蚀条件的允许范围变大，设定刻蚀条件的自由度增大，所以能够提高侧面腐蚀长度的控制性，能够以更高的生产率，更稳定地进行能均匀地形成特性良好的薄膜晶体管的薄膜晶体管基片的制造。所以，W浓度为重量17％到22％的Mo-W合金更适合于作为有自对准LDD的薄膜晶体管的栅极。
实施例2
图5，图6表示作为根据本发明第2实施例的用薄膜晶体管基片的液晶显示装置象素的一个例子在它们的A-A′线上的截面。薄膜晶体管的栅极12，栅极线30和共通的电压信号线31是由含W浓度为重量5％(约3％的原子)的Mo-W合金形成的。用含磷酸浓度为重量70％的刻蚀溶液对薄膜晶体管的栅极12，栅极线30和共通的电压信号线31进行刻蚀加工，在栅极12的端部自对准地形成长度为2μm的LDD 11。
在栅极上，形成由通过用TEOS的等离子体CVD法形成的SiO2构成的层间绝缘膜13，在层间绝缘膜上开出接触孔14。薄膜晶体管通过接触孔与由Ti/Al-Si合金/Ti层积膜构成的漏极配线15连接。进一步，通过由SiN构成的无机抗蚀剂(SiN)16和由聚酰亚胺系或丙烯系的透明树脂构成的有机抗蚀剂18，形成由ITO(铟-锡氧化物)构成的透明电极21，通过通孔17和19与源极配线20连接。透明电极与用于保持加在液晶(图中未画出)上的电压的保持电容32电连接，保持电容32是通过栅极绝缘膜在由栅极和同层的导电膜构成的共通电极配线和多晶硅膜之间形成的。此外，在图6中，参照号码1，9，10和11与图1和图2中的相同。
在本实施例的薄膜晶体管基片制造工序中，用Al的湿刻蚀对由包含Al合金的层积膜构成的漏极配线15进行加工时，由于通过层间绝缘膜的缺陷沾染了Al的刻蚀溶液，存在栅极和与栅极同层的配线由于刻蚀而发生断线的担心。通过用卤素系气体的干刻蚀对包含Al合金的层积膜进行加工，能够抑制下层的栅极配线的断线。又，除了用ITO，也可以用IZO(铟-锌氧化物)制作透明电极，能够通过包含用有机酸的湿刻蚀加工的光刻法对用无论哪种氧化物靶的溅射法淀积的透明电极进行加工。又，代替Mo-W合金，也可以用Mo-Cr合金，Mo-Zr合金或在Mo中同时添加Cr，Zr，W两种以上的合金，用含磷酸浓度为重量60％到70％的刻蚀溶液，能够抑制在Mo合金膜表面形成钝化膜并能够实现均匀的刻蚀。由于通过调整加入Mo中的各元素的添加量可以得到适合的侧面腐蚀长度，所以能够以高的生产率制成可形成均匀LDD的薄膜晶体管基片。
实施例3
图7表示根据本发明的薄膜晶体管基片的第3实施例，图8表示在图7的薄膜晶体管基片的B-B′线上的截面。在作为透明绝缘基片的玻璃基片1上形成N型和P型薄膜晶体管，由Mo/Al-Si/Mo的层积膜构成的漏极配线15进行连接。薄膜晶体管的栅极12和45由W浓度为重量24％(约14％的原子)的Mo-W合金形成。又，在N型薄膜晶体管的栅极12的端部对着栅极自对准地形成LDD。此外，在图7中，14是接触孔，在图8中，13是层间绝缘膜。
在图9到图13中，表示了图8的薄膜晶体管基片的制造方法的一个例子。在透明绝缘基片1上顺次地形成基底膜2，基底膜3，多晶硅膜4和栅绝缘膜5，进一步，用溅射法淀积由含W浓度为重量24％的Mo-W合金构成的导电膜6。下面如图9所示，使包含N型薄膜晶体管的源极和漏极的区域开口，形成抗蚀剂图案41后，用磷酸浓度为重量60％的刻蚀溶液，对由Mo-W合金构成的导电膜6进行湿刻蚀，加工成从抗蚀剂图案41后退0.3μm的形状。其次，将抗蚀剂图案41用作掩模，以每平方厘米1×1015的剂量将磷离子注入多晶硅膜，对N型薄膜晶体管的源极和漏极进行掺杂。如图10所示，在除去抗蚀剂图案后，以每平方厘米3×1012的剂量低浓度地注入磷离子，形成LDD11。其次如图11所示，覆盖N型薄膜晶体管的区域，形成使P型薄膜晶体管的源极和漏极区域开口的抗蚀剂图案42。如图12所示，通过用添加了氧的NF3，SF6，CF4等的卤素气体的干刻蚀，一面对抗蚀剂进行侧面腐蚀一面对P型薄膜晶体管的栅极进行加工，使在源极和漏极上的Mo-W膜开口。进一步，以每平方厘米3×1015的剂量注入硼离子，对P型薄膜晶体管的漏极43和源极44进行掺杂。在除去抗蚀剂后，进行热退火或RTA，激活注入的掺杂剂，如图13所示，在同一基片上形成N型和P型薄膜晶体管。进一步，与第2实施例相同，形成由层间绝缘膜和Al合金层积膜构成的配线46，形成图8的薄膜晶体管基片。此外，在图9中，参照号码9，10和12如图6中的说明。
在本实施例的P型薄膜晶体管栅极的加工中用湿刻蚀，栅极形成从抗蚀剂后退的形状，不在栅极后退区域的被抗蚀剂覆盖的区域的多晶硅中注入硼，成为高电阻区域，使P型薄膜晶体管的特性下降。因为也可以对用于本发明的薄膜晶体管栅极的由Mo和W组成的Mo-W合金膜进行干刻蚀加工，所以如图12所示，通过对P型薄膜晶体管栅极进行干刻蚀，一面对抗蚀剂进行侧面腐蚀一面进行加工，能够防止在栅极端形成没有注入硼的区域，能够制成特性良好的P型薄膜晶体管。如果根据本实施例，能够以很好的生产性制成能在同一块基片上形成均匀性可靠性优越的N型和P型薄膜晶体管的CMOS型的薄膜晶体管基片，能够低成本地提供在基片上有电力消耗小的CMOS型驱动电路的液晶显示装置。
如以上说明所述，如果根据本发明，能够提供生产性优越有均匀性特性的薄膜晶体管基片。又，能够低成本地制造适用于内藏驱动电路的液晶显示装置和自发光型的显示装置的薄膜晶体管基片。

Claims (3)

1.薄膜晶体管基片，其特征是它是形成具有在透明绝缘性基片上形成由结晶硅构成的半导体膜，通过栅绝缘膜在半导体膜上形成由金属膜构成的栅极，以及夹着栅极由掺杂半导体膜形成的源极和漏极，并且在栅极一端具有用与源极和漏极相同类型的掺杂剂以比源极和漏极低的浓度进行掺杂的LDD区域的共面型薄膜晶体管的薄膜晶体管基片，
上述栅极由用Mo作为主成分，包含重量5％以上不到25％的W的单层金属膜构成。
2.薄膜晶体管基片，它的特征是它是形成具有在透明绝缘性基片上形成由结晶硅构成的半导体膜，通过栅绝缘膜在半导体膜上形成由金属膜构成的栅极，以及夹着栅极由掺杂半导体膜形成的源极和漏极，并且在栅极一端具有用与源极和漏极相同类型的掺杂剂以比源极和漏极低的浓度进行掺杂的LDD区域的共面型薄膜晶体管的薄膜晶体管基片，
上述栅极由用Mo作为主成分，包含重量17％以上22％以下的W的单层金属膜构成。
3.薄膜晶体管基片的制造方法，该方法包括用含有重量60％以上70％以下的磷酸的刻蚀剂液对栅极进行加工的工序，形成权利要求1或2所述的薄膜晶体管基片。
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