JP4484938B2 - ケミカルメカニカルポリシング中の基板の層厚測定方法及び装置 - Google Patents
ケミカルメカニカルポリシング中の基板の層厚測定方法及び装置 Download PDFInfo
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- JP4484938B2 JP4484938B2 JP2008173826A JP2008173826A JP4484938B2 JP 4484938 B2 JP4484938 B2 JP 4484938B2 JP 2008173826 A JP2008173826 A JP 2008173826A JP 2008173826 A JP2008173826 A JP 2008173826A JP 4484938 B2 JP4484938 B2 JP 4484938B2
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
- G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/12—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving optical means
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D7/00—Bonded abrasive wheels, or wheels with inserted abrasive blocks, designed for acting otherwise than only by their periphery, e.g. by the front face; Bushings or mountings therefor
- B24D7/12—Bonded abrasive wheels, or wheels with inserted abrasive blocks, designed for acting otherwise than only by their periphery, e.g. by the front face; Bushings or mountings therefor with apertures for inspecting the surface to be abraded
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B9/00—Measuring instruments characterised by the use of optical techniques
- G01B9/02—Interferometers
- G01B9/02015—Interferometers characterised by the beam path configuration
- G01B9/02017—Interferometers characterised by the beam path configuration with multiple interactions between the target object and light beams, e.g. beam reflections occurring from different locations
- G01B9/02021—Interferometers characterised by the beam path configuration with multiple interactions between the target object and light beams, e.g. beam reflections occurring from different locations contacting different faces of object, e.g. opposite faces
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B9/00—Measuring instruments characterised by the use of optical techniques
- G01B9/02—Interferometers
- G01B9/02015—Interferometers characterised by the beam path configuration
- G01B9/02027—Two or more interferometric channels or interferometers
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Length Measuring Devices By Optical Means (AREA)
- Weting (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Ladders (AREA)
Description
ここで、nはプラテン回転の回数、a1、a2、a3およびa4は最小自乗法を適合させたときに計算された係数である。一旦、適合係数が計算されると、レーザービーム42が(破線138で示す)中心線124を横断する対称時間Tsymは、次のように計算される。
プラテンの回転数に対して最小自乗法を用いて対称時間Tsymを計算するので、支持リング直下のサンプリング領域の相対位置における差によって起きる不確定性が実質的に減少し、それによって対称時間Tsymにおける不確定性が著しく減少する。
ここで、ImaxとIminは正弦波の最大振幅と最小振幅、φは位相差、Tは正弦波のピーク間周期、Tmeasureは測定時間、そしてkは振幅調整係数である。最大振幅Imaxと最小振幅Iminは、binから最大と最小の強度測定値を選択することによって決定される。振幅調整係数kは、ユーザー設定されて適合処理を改善し、約0.9の値を持つ。位相差φとピーク間周期Tはこの式において最適化されるべき適合係数である。モデル関数は、例えば従来からの最小自乗法によって、観察された強度測定値へ適合される。
ここで、λはレーザービームの波長、nは薄膜層の屈折率、α'は薄膜層を通るレーザービームの角度、そしてΔTは最も新しく計算されたピーク間周期である。入射角α'はスネルの法則n1sinα'=n2sinαから計算されてもよく、ここでn1は薄膜層14の屈折率、n2は空気の屈折率、αはレーザー44の垂直軸に対する角度である。
ここで、Nはフィルタリングされた反射率追跡における強度ピークの数、Pは最も新しく計算された研磨速度、そしてTpeakは最新の強度ピークである。代替として、厚さは強度周期の数または強度周期の端数を数えることによって計算できる、
この処理は器具と処理の品質判定のためにブランク基板の研磨について説明したが、パターン化された装置基板の研磨中の厚さ測定を実行することが可能であってもよい。しかし、装置基板から生成される反射率追跡は、普通、滑らかな正弦波ではいので、例えば、Andreas Wiswesserによる、本発明の譲受人へ譲渡された米国特許出願第08/962,085号「ケミカルメカニカルポリシング中の基板反射率モデル化のための方法と装置」1997年10月31日出願、に記載されているようにより複雑なパターン認識アルゴリズムを必要とする。この出願のすべての開示は引用によって本明細書に組み込む。厚さの測定は、研磨パラメータの動的制御を提供し、研磨完了を検知するために、用いられることができる。
Claims (11)
- ケミカルメカニカルポリシング(化学機械研磨)中に基板上の層の特性を測定する方法であって、
窓を有するポリシングパッドに基板の表面を接触させるステップと、
基板とポリシングパッドの間に相対運動を生じさせるステップと、
窓の中へと光ビームを向け、基板に対するポリシングパッドの相対運動により、基板表面を横切る経路で該光ビームを移動させるステップと、
基板から反射する光ビームによって生成される干渉信号をモニタするステップと、
前記経路に沿って並んだ複数のサンプリング領域に対応する複数の強度測定値を前記干渉信号から抽出するステップと、
各サンプリング領域に対して基板中心からの前記基板上の半径距離を決定するステップと、
前記半径距離に従って前記強度測定値を複数の半径方向幅に分けるステップと、
半径方向幅毎の特性を、当該半径方向幅に関する強度測定値より計算するステップと
を有し、
前記特性が基板層の残りの厚さである、
方法。 - ケミカルメカニカルポリシング(化学機械研磨)中に基板上の層の特性を測定する方法であって、
窓を有するポリシングパッドに基板の表面を接触させるステップと、
基板とポリシングパッドの間に相対運動を生じさせるステップと、
窓の中へと光ビームを向け、基板に対するポリシングパッドの相対運動により、基板表面を横切る経路で該光ビームを移動させるステップと、
基板から反射する光ビームによって生成される干渉信号をモニタするステップと、
前記経路に沿って並んだ複数のサンプリング領域に対応する複数の強度測定値を前記干渉信号から抽出するステップと、
各サンプリング領域に対して基板中心からの前記基板上の半径距離を決定するステップと、
前記半径距離に従って前記強度測定値を複数の半径方向幅に分けるステップと、
半径方向幅毎の特性を、当該半径方向幅に関する強度測定値より計算するステップと
を有し、
半径距離を決定するステップが、窓が基板の中心線を横切る時間を決定するステップを有する、
方法。 - 半径距離を決定するステップが、ポリシングパッドの位置を、強度測定がなされた時間と窓が基板の中心線を横切る時間の差より決定するステップを有する請求項2に記載の方法。
- 支持リングを有するキャリアヘッドにより、基板がポリシングパッド上に配置され、窓が基板の中心線を横切る時間の決定が、窓が支持リングの下を通過する第1の時間と第2の時間を決定するステップを有する請求項2に記載の方法。
- 支持リングが、反射する低位置表面を有する請求項4に記載の方法。
- 半径距離を決定するステップが、キャリアヘッド掃引輪郭からキャリアヘッドの位置を決定するステップを更に有する請求項5に記載の方法。
- 窓が基板の中心線を横切る時間を決定するステップが、窓が支持リングの下を通過する複数の第1の時間と複数の第2の時間を決定するステップと、複数の第1の時間及び複数の第2の時間から、窓が基板の中心線を横切る時間を与えるモデル関数を発生させるステップを有する請求項4に記載の方法。
- 窓が基板の中心線を横切る時間を決定するステップが、ポリシングパッドの位置をモニタする位置センサから信号を受け取るステップを有する請求項2に記載の方法。
- ケミカルメカニカルポリシング(化学機械研磨)中に基板上の層の特性を測定する方法であって、
窓を有するポリシングパッドに基板の表面を接触させるステップと、
基板とポリシングパッドの間に相対運動を生じさせるステップと、
窓の中へと光ビームを向け、基板に対するポリシングパッドの相対運動により、基板表面を横切る経路で該光ビームを移動させるステップと、
基板から反射する光ビームによって生成される干渉信号をモニタするステップと、
前記経路に沿って並んだ複数のサンプリング領域に対応する複数の強度測定値を前記干渉信号から抽出するステップと、
各サンプリング領域に対して基板中心からの前記基板上の半径距離を決定するステップと、
前記半径距離に従って前記強度測定値を複数の半径方向幅に分けるステップと、
半径方向幅毎の特性を、当該半径方向幅に関する強度測定値より計算するステップと
を有し、
所定の半径よりも長い半径距離のサンプリング領域からの強度測定値を捨てるステップを更に有する方法。 - ケミカルメカニカルポリシング(化学機械研磨)中に基板上の層の特性を測定する方法であって、
窓を有するポリシングパッドに基板の表面を接触させるステップと、
基板とポリシングパッドの間に相対運動を生じさせるステップと、
窓の中へと光ビームを向け、基板に対するポリシングパッドの相対運動により、基板表面を横切る経路で該光ビームを移動させるステップと、
基板から反射する光ビームによって生成される干渉信号をモニタするステップと、
前記経路に沿って並んだ複数のサンプリング領域に対応する複数の強度測定値を前記干渉信号から抽出するステップと、
各サンプリング領域に対して基板中心からの前記基板上の半径距離を決定するステップと、
前記半径距離に従って前記強度測定値を複数の半径方向幅に分けるステップと、
半径方向幅毎の特性を、当該半径方向幅に関する強度測定値より計算するステップと
を有し、
ポリシングパッドがプラテンの上に配置され、前記プラテンが回転することで基板とポリシングパッドの間に相対運動が生じ、光源が前記プラテンに接続され且つ該プラテンと共に回転する、
方法。 - ケミカルメカニカルポリシング中に基板上の層の特性を測定する方法であって、
ポリシングパッドに基板の表面を接触させるステップと、
ポリシングパッドの窓を介して基板上へと光ビームを向けるステップと、
光ビームを基板表面を横切る経路で移動させるステップと、
基板からの光ビームの反射によって作られる複数の強度測定値を発生させるステップであって、該複数の強度測定値は前記経路に沿って並んだ複数のサンプリング領域に対応する、該ステップと、
強度測定中に、基板中心からの各前記サンプリング領域の半径距離に従って、前記強度測定値を複数の半径方向幅に分けるステップと、
半径方向幅ごとの、基板層の残りの厚さである特性を、該半径方向幅に関する強度測定値から計算するステップと
を有する方法。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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US09/184,775 US6159073A (en) | 1998-11-02 | 1998-11-02 | Method and apparatus for measuring substrate layer thickness during chemical mechanical polishing |
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JP2000579945A Division JP4335459B2 (ja) | 1998-11-02 | 1999-10-26 | ケミカルメカニカルポリシング中の基板の層厚測定方法及び装置 |
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JP2008275641A JP2008275641A (ja) | 2008-11-13 |
JP4484938B2 true JP4484938B2 (ja) | 2010-06-16 |
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JP2000579945A Expired - Lifetime JP4335459B2 (ja) | 1998-11-02 | 1999-10-26 | ケミカルメカニカルポリシング中の基板の層厚測定方法及び装置 |
JP2008173826A Expired - Lifetime JP4484938B2 (ja) | 1998-11-02 | 2008-07-02 | ケミカルメカニカルポリシング中の基板の層厚測定方法及び装置 |
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US (5) | US6159073A (ja) |
JP (2) | JP4335459B2 (ja) |
TW (1) | TW431948B (ja) |
WO (1) | WO2000026609A2 (ja) |
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1998
- 1998-11-02 US US09/184,775 patent/US6159073A/en not_active Expired - Lifetime
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1999
- 1999-09-22 TW TW088116245A patent/TW431948B/zh not_active IP Right Cessation
- 1999-10-26 WO PCT/US1999/025214 patent/WO2000026609A2/en active Application Filing
- 1999-10-26 JP JP2000579945A patent/JP4335459B2/ja not_active Expired - Lifetime
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Also Published As
Publication number | Publication date |
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JP2003519361A (ja) | 2003-06-17 |
JP4335459B2 (ja) | 2009-09-30 |
US6764380B2 (en) | 2004-07-20 |
US7018271B2 (en) | 2006-03-28 |
JP2008275641A (ja) | 2008-11-13 |
US20040242123A1 (en) | 2004-12-02 |
US6494766B1 (en) | 2002-12-17 |
US6159073A (en) | 2000-12-12 |
TW431948B (en) | 2001-05-01 |
WO2000026609A2 (en) | 2000-05-11 |
US6524165B1 (en) | 2003-02-25 |
US20030104761A1 (en) | 2003-06-05 |
WO2000026609A3 (en) | 2002-10-03 |
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