JP2008275641A - ケミカルメカニカルポリシング中の基板の層厚測定方法及び装置 - Google Patents
ケミカルメカニカルポリシング中の基板の層厚測定方法及び装置 Download PDFInfo
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
- G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/12—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving optical means
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D7/00—Bonded abrasive wheels, or wheels with inserted abrasive blocks, designed for acting otherwise than only by their periphery, e.g. by the front face; Bushings or mountings therefor
- B24D7/12—Bonded abrasive wheels, or wheels with inserted abrasive blocks, designed for acting otherwise than only by their periphery, e.g. by the front face; Bushings or mountings therefor with apertures for inspecting the surface to be abraded
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B9/00—Measuring instruments characterised by the use of optical techniques
- G01B9/02—Interferometers
- G01B9/02015—Interferometers characterised by the beam path configuration
- G01B9/02017—Interferometers characterised by the beam path configuration with multiple interactions between the target object and light beams, e.g. beam reflections occurring from different locations
- G01B9/02021—Interferometers characterised by the beam path configuration with multiple interactions between the target object and light beams, e.g. beam reflections occurring from different locations contacting different faces of object, e.g. opposite faces
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B9/00—Measuring instruments characterised by the use of optical techniques
- G01B9/02—Interferometers
- G01B9/02015—Interferometers characterised by the beam path configuration
- G01B9/02027—Two or more interferometric channels or interferometers
Abstract
【解決手段】光ビームは、ポリシングパッド内の窓を通って分割され、基板に対するポリシングパッドの動きは、基板表面を横断するパス内で光ビームを移動させる。基板から反射される光ビームによって生成される干渉信号はモニタされ、複数の強度測定値は、干渉信号から抽出される。各強度測定値は、基板表面を横断するパス内のサンプリング領域に対応する。半径方向位置は、サンプリング領域毎に決定され、強度測定値は、半径方向位置に対応する複数の半径方向幅へ分割される。層の厚さは、その半径方向幅と関連する強度測定値から半径方向幅毎に計算される。
【選択図】図6
Description
ここで、nはプラテン回転の回数、a1、a2、a3およびa4は最小自乗法を適合させたときに計算された係数である。一旦、適合係数が計算されると、レーザービーム42が(破線138で示す)中心線124を横断する対称時間Tsymは、次のように計算される。
プラテンの回転数に対して最小自乗法を用いて対称時間Tsymを計算するので、支持リング直下のサンプリング領域の相対位置における差によって起きる不確定性が実質的に減少し、それによって対称時間Tsymにおける不確定性が著しく減少する。
ここで、ImaxとIminは正弦波の最大振幅と最小振幅、φは位相差、Tは正弦波のピーク間周期、Tmeasureは測定時間、そしてkは振幅調整係数である。最大振幅Imaxと最小振幅Iminは、binから最大と最小の強度測定値を選択することによって決定される。振幅調整係数kは、ユーザー設定されて適合処理を改善し、約0.9の値を持つ。位相差φとピーク間周期Tはこの式において最適化されるべき適合係数である。モデル関数は、例えば従来からの最小自乗法によって、観察された強度測定値へ適合される。
ここで、λはレーザービームの波長、nは薄膜層の屈折率、α'は薄膜層を通るレーザービームの角度、そしてΔTは最も新しく計算されたピーク間周期である。入射角α'はスネルの法則n1sinα'=n2sinαから計算されてもよく、ここでn1は薄膜層14の屈折率、n2は空気の屈折率、αはレーザー44の垂直軸に対する角度である。
ここで、Nはフィルタリングされた反射率追跡における強度ピークの数、Pは最も新しく計算された研磨速度、そしてTpeakは最新の強度ピークである。代替として、厚さは強度周期の数または強度周期の端数を数えることによって計算できる、
この処理は器具と処理の品質判定のためにブランク基板の研磨について説明したが、パターン化された装置基板の研磨中の厚さ測定を実行することが可能であってもよい。しかし、装置基板から生成される反射率追跡は、普通、滑らかな正弦波ではいので、例えば、Andreas Wiswesserによる、本発明の譲受人へ譲渡された米国特許出願第08/962,085号「ケミカルメカニカルポリシング中の基板反射率モデル化のための方法と装置」1997年10月31日出願、に記載されているようにより複雑なパターン認識アルゴリズムを必要とする。この出願のすべての開示は引用によって本明細書に組み込む。厚さの測定は、研磨パラメータの動的制御を提供し、研磨完了を検知するために、用いられることができる。
Claims (35)
- ケミカルメカニカルポリシング(化学機械研磨)中に基板上の層の特性を測定する方法であって、
窓を有するポリシングパッドに基板の表面を接触させるステップと、
基板とポリシングパッドの間に相対運動を生じさせるステップと、
窓の中へと光ビームを向け、基板に対するポリシングパッドの相対運動により基板の経路の中を光ビームが運動するようになるステップと、
基板から反射する光ビームによって生成される干渉信号をモニタするステップと、
干渉信号、基板表面に亘る経路にあるサンプリング領域に対応する各強度測定値から複数の強度測定値を抽出するステップと、
各サンプリング領域に対して半径方向位置を決定するステップと、
これら反射データを、半径方向位置に従って複数の半径方向幅に分けるステップと、
半径方向幅毎の特性を、当該半径方向幅に関する強度測定値より計算するステップと
を有する方法。 - 該特性が、研磨速度である請求項1に記載の方法。
- 該特性が、基板層の初期厚さと最終厚さの差である請求項1に記載の方法。
- 該特性が、基板層の初期厚さである請求項1に記載の方法。
- 該特性が、基板層の残りの厚さである請求項1に記載の方法。
- 研磨の均一性測定値を、半径方向幅毎の測定特性から算出するステップを更に有する請求項1に記載の方法。
- 特性を計算する該ステップが、各半径方向幅に対してモデル関数を決定するステップを有する請求項1に記載の方法。
- モデル関数が、正弦関数である請求項7に記載の方法。
- 正弦関数が、周期と位相のずれにより記述される請求項8に記載の方法。
- 周期と位相のずれが、最小自乗法によりモデル関数を関連する半径方向幅内の強度測定値に近似させることにより計算される請求項9に記載の方法。
- 強度測定値が、一連のサンプリング時間全体にわたって干渉信号を積分することにより抽出される請求項1に記載の方法。
- 各サンプリング領域が、対応するサンプリング時間に光ビームが移動する基板の部分に対応する請求項13に記載の方法。
- 半径方向位置を決定するステップが、窓が基板の中心線を横切る時間を決定するステップを有する請求項1に記載の方法。
- 半径方向位置を決定するステップが、ポリシングパッドの位置を、強度測定がなされた時間と窓が基板の中心線を横切る時間の差より決定するステップを有する請求項15に記載の方法。
- 支持リングを有するキャリアヘッドにより、基板がポリシングパッド上に配置され、窓が基板の中心線を横切る時間の決定が、窓が支持リングの下を通過する第1の時間と第2の時間を決定するステップを有する請求項15に記載の方法。
- 支持リングが、反射率の低い表面を有する請求項17に記載の方法。
- 半径方向位置を決定するステップが、キャリアヘッド掃引輪郭からキャリアヘッドの位置を決定するステップを更に有する請求項18に記載の方法。
- 窓が基板の中心線を横切る時間を決定するステップが、窓が支持リングの下を通過する複数の第1の時間と複数の第2の時間を決定するステップと、複数の第1の時間及び複数の第2の時間から、窓が基板の中心線を横切る時間を与えるモデル関数を発生させるステップを有する請求項17に記載の方法。
- 窓が基板の中心線を横切る時間を決定するステップが、ポリシングパッドの位置をモニタする位置センサから信号を受け取るステップを有する請求項1に記載の方法。
- 所定の半径よりも長い半径方向位置のサンプリング領域からの強度測定値を捨てるステップを更に有する請求項1に記載の方法。
- ポリシングパッドが、プラテンの上に配置され、プラテンが回転して、基板とポリシングパッドの間に相対運動が生じる請求項1に記載の方法。
- 光源が、プラーテンに接続され、プラテンとともに回転する請求項23に記載の方法。
- 光源がレーザーである請求項23に記載の方法。
- ケミカルメカニカルポリシング中に基板上の層の特性を測定する方法であって、
ポリシングパッドに基板の表面を接触させるステップと、
ポリシングパッドの窓を介して基板上へと光ビームを向けるステップと、
光ビームに基板表面の経路で移動させるステップと、
基板からの光ビームの反射によって作られる複数の強度測定値を発生させるステップと、
強度測定中にこれら強度測定値を、基板上の光ビームの半径方向位置に従って複数の半径方向幅に分けるステップと、
半径方向幅に関する強度測定値から特性を、半径方向幅ごとに計算するステップと
を有する方法。 - ケミカルメカニカルポリシング装置であって、
窓を有する可動の研磨表面と、
ポリシングパッドと接触する層を有する基板を保持するためのキャリアヘッドと、
窓の中へと光ビームを向ける光源であって、ポリシングパッドが基板と相対運動をすることにより、光ビームが基板表面に亘る経路を移動する、該光源と、
基板から反射する光ビームによって作られる干渉信号をモニタする検出器と、
そのそれぞれが基板表面に亘る経路のサンプリング領域に対応する複数の強度測定値を干渉信号から抽出し、各サンプリング領域に対する半径方向位置を決定し、これら強度測定値を半径方向位置に従って複数の半径方向幅に分け、半径方向幅毎の特性を当該半径方向幅に関する強度測定値より計算するように、構成されるコンピュータと
を備えるケミカルメカニカルポリシング装置。 - 該特性が、研磨速度である請求項27に記載の方法。
- 該特性が、基板層の初期厚さである請求項27に記載の方法。
- 研磨特性が、基板層の初期厚さと最終厚さの差である請求項27に記載の方法。
- 該特性が、基板層の残りの厚さである請求項27に記載の方法。
- 半径方向幅毎に測定される特性から、研磨の均一性の測定値を算出するステップを更に有する請求項27に記載の方法。
- キャリアヘッドが、反射率の低い表面を備える支持リングを有する請求項27に記載の装置。
- ポリシングパッドの位置をモニタする位置センサを、更に備える請求項27に記載の装置。
- キャリアヘッドの位置をモニタする位置センサを、更に備える請求項27に記載の装置。
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US09/184,775 US6159073A (en) | 1998-11-02 | 1998-11-02 | Method and apparatus for measuring substrate layer thickness during chemical mechanical polishing |
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JPH10166262A (ja) * | 1996-12-10 | 1998-06-23 | Nikon Corp | 研磨装置 |
US6108091A (en) * | 1997-05-28 | 2000-08-22 | Lam Research Corporation | Method and apparatus for in-situ monitoring of thickness during chemical-mechanical polishing |
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1998
- 1998-11-02 US US09/184,775 patent/US6159073A/en not_active Expired - Lifetime
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1999
- 1999-09-22 TW TW088116245A patent/TW431948B/zh not_active IP Right Cessation
- 1999-10-26 WO PCT/US1999/025214 patent/WO2000026609A2/en active Application Filing
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
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KR20200003959A (ko) * | 2018-07-03 | 2020-01-13 | 주식회사 케이씨텍 | 기판 연마 시스템 |
KR102493014B1 (ko) * | 2018-07-03 | 2023-01-31 | 주식회사 케이씨텍 | 기판 연마 시스템 |
JP2021032840A (ja) * | 2019-08-29 | 2021-03-01 | スピードファム株式会社 | ワーク形状測定方法 |
KR20220006445A (ko) * | 2020-07-08 | 2022-01-17 | 징 세미콘덕터 코포레이션 | 연마 패드, 연마 장치 및 실리콘 웨이퍼를 연마하기 위한 방법 |
KR102523271B1 (ko) | 2020-07-08 | 2023-04-18 | 징 세미콘덕터 코포레이션 | 연마 패드, 연마 장치 및 실리콘 웨이퍼를 연마하기 위한 방법 |
Also Published As
Publication number | Publication date |
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US20040242123A1 (en) | 2004-12-02 |
US6524165B1 (en) | 2003-02-25 |
JP4335459B2 (ja) | 2009-09-30 |
US20030104761A1 (en) | 2003-06-05 |
TW431948B (en) | 2001-05-01 |
US7018271B2 (en) | 2006-03-28 |
JP2003519361A (ja) | 2003-06-17 |
US6494766B1 (en) | 2002-12-17 |
US6764380B2 (en) | 2004-07-20 |
WO2000026609A3 (en) | 2002-10-03 |
JP4484938B2 (ja) | 2010-06-16 |
WO2000026609A2 (en) | 2000-05-11 |
US6159073A (en) | 2000-12-12 |
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