JP4401507B2 - 配線されたフローティングディフュージョンと共通増幅器のあるアクティブピクセルセンサ - Google Patents

配線されたフローティングディフュージョンと共通増幅器のあるアクティブピクセルセンサ Download PDF

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JP4401507B2
JP4401507B2 JP37399899A JP37399899A JP4401507B2 JP 4401507 B2 JP4401507 B2 JP 4401507B2 JP 37399899 A JP37399899 A JP 37399899A JP 37399899 A JP37399899 A JP 37399899A JP 4401507 B2 JP4401507 B2 JP 4401507B2
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pixel
pixels
charge
floating diffusion
voltage conversion
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JP2000232216A (ja
JP2000232216A5 (enExample
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エム ガイダッシュ ロバート
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イーストマン コダック カンパニー
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/813—Electronic components shared by multiple pixels, e.g. one amplifier shared by two pixels

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  • Solid State Image Pick-Up Elements (AREA)
JP37399899A 1998-12-31 1999-12-28 配線されたフローティングディフュージョンと共通増幅器のあるアクティブピクセルセンサ Expired - Lifetime JP4401507B2 (ja)

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Application Number Priority Date Filing Date Title
US224615 1998-12-31
US09/224,615 US6657665B1 (en) 1998-12-31 1998-12-31 Active Pixel Sensor with wired floating diffusions and shared amplifier

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JP2000232216A JP2000232216A (ja) 2000-08-22
JP2000232216A5 JP2000232216A5 (enExample) 2007-02-08
JP4401507B2 true JP4401507B2 (ja) 2010-01-20

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US (1) US6657665B1 (enExample)
EP (1) EP1017106B1 (enExample)
JP (1) JP4401507B2 (enExample)
KR (1) KR100805412B1 (enExample)
DE (1) DE69943122D1 (enExample)
TW (1) TW457815B (enExample)

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KR20000052598A (ko) 2000-08-25
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US6657665B1 (en) 2003-12-02
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