KR100750778B1 - 능동 화소 센서 및 그 제조 방법 - Google Patents
능동 화소 센서 및 그 제조 방법 Download PDFInfo
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- KR100750778B1 KR100750778B1 KR1019990063213A KR19990063213A KR100750778B1 KR 100750778 B1 KR100750778 B1 KR 100750778B1 KR 1019990063213 A KR1019990063213 A KR 1019990063213A KR 19990063213 A KR19990063213 A KR 19990063213A KR 100750778 B1 KR100750778 B1 KR 100750778B1
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- 238000009792 diffusion process Methods 0.000 claims abstract description 15
- 238000000034 method Methods 0.000 claims description 17
- 238000006243 chemical reaction Methods 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 claims 2
- 239000004065 semiconductor Substances 0.000 claims 1
- 239000000758 substrate Substances 0.000 claims 1
- 230000007704 transition Effects 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 8
- 238000005070 sampling Methods 0.000 description 8
- 238000012546 transfer Methods 0.000 description 8
- 230000002596 correlated effect Effects 0.000 description 6
- 239000007787 solid Substances 0.000 description 4
- 230000010354 integration Effects 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 241000086550 Dinosauria Species 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000005096 rolling process Methods 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 230000003213 activating effect Effects 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 230000000875 corresponding effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000002123 temporal effect Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
- H04N25/616—Noise processing, e.g. detecting, correcting, reducing or removing noise involving a correlated sampling function, e.g. correlated double sampling [CDS] or triple sampling
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
- H04N25/75—Circuitry for providing, modifying or processing image signals from the pixel array
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/766—Addressed sensors, e.g. MOS or CMOS sensors comprising control or output lines used for a plurality of functions, e.g. for pixel output, driving, reset or power
Abstract
Description
Claims (12)
- 적어도 다수의 화소를 갖는 능동 화소 센서로부터 순차적인 행 방향 순서로 판독되는, 행과 열로 배열되는 다수의 화소를 구비하는 상기 능동 화소 센서(an active pixel sensor)에 있어서,현재 판독 중인 행 내에서 전하에서 전압으로의 변환 노드(a charge to voltage conversion node)에 동작가능하게(operatively) 접속되는 포토다이오드 광검출기(a photodiode photodetector)와,상기 전하에서 전압으로의 변환 노드에 접속되는 소스를 구비하는, 상기 포토다이오드 광검출기와 동일한 화소와 연관된 리세트 트랜지스터와,현재 리세트 제어 버스(present reset control buss)에 접속되는 상기 리세트 트랜지스터 상의 리세트 게이트 및 이전에 판독된 행의 이전 리세트 제어 버스에 접속되는 상기 리세트 트랜지스터 상의 드레인과,상기 전하에서 전압으로의 변환 노드에 동작가능하게 접속되는 증폭기를 포함하는,능동 화소 센서.
- 제 1 항에 있어서,상기 리세트 트랜지스터의 소스는 상기 전하에서 전압으로의 변환 노드인,능동 화소 센서.
- 제 1 항에 있어서,상기 전하에서 전압으로의 변환 노드는 부동 확산부(a floating diffusion)인,능동 화소 센서.
- 제 1 항에 있어서,상기 증폭기는 소스 팔로워 증폭기(a source follower amplifier)인,능동 화소 센서.
- 제 1 항에 있어서,상기 드레인에 접속되는 상기 이전 리세트 제어 버스에 사전결정된 제 1 신호를 인가하고 상기 현재 리세트 제어 버스에 사전결정된 제 2 신호를 인가하여, 현재 판독 중인 상기 행의 상기 전하에서 전압으로의 변환 노드를 리세트하는,능동 화소 센서.
- 제 5 항에 있어서,상기 전하에서 전압으로의 변환 노드를 리세트하는 프로세스는 상기 현재 판독 중인 상기 행을 선택하는,능동 화소 센서.
- 제 5 항에 있어서,각각의 열 내의 광검출기의 상기 증폭기에 동작가능하게 접속되는, 상기 각 열마다의 출력 신호 열 버스를 더 포함하고,또한, 상기 사전결정된 제 1 및 제 2 신호를 인가하여 상기 현재 판독 중인 행의 상기 증폭기를 상기 출력 신호 열 버스에 접속시키는,능동 화소 센서.
- 제 1 항에 있어서,상기 드레인에 접속된 상기 이전 리세트 제어 버스에 사전결정된 제 1 신호를 인가하고 상기 현재 리세트 제어 버스에 사전결정된 제 2 신호를 인가하여, 상기 이전에 판독된 행의 상기 증폭기를 디스에이블(disable)시키는 사전결정된 전위로 상기 전하에서 전압으로의 변환 노드를 세팅하는,능동 화소 센서.
- 제 8 항에 있어서,상기 이전에 판독된 행을 디스에이블시키는 프로세스는 상기 이전에 판독된 행을 선택해제(deselect)하는,능동 화소 센서.
- 제 8 항에 있어서,각각의 열 내의 광검출기의 상기 증폭기에 동작가능하게 접속되는, 상기 각 열마다의 출력 신호 열 버스를 더 포함하고,또한, 상기 사전결정된 제 1 및 제 2 신호를 인가하여 상기 이전에 판독된 행의 상기 증폭기를 상기 출력 신호 열 버스로부터 접속해제시키는,능동 화소 센서.
- 행과 열로 배열되는 다수의 화소를 구비하는 반도체 기판을 제공하되 상기 행이 순차적으로 판독될 수 있도록 하는 단계와,현재 리세트 버스와 이전 리세트 버스가 존재하도록 상기 화소의 적어도 일부분을 생성하는 단계를 포함하되, 상기 버스들은 상기 일부분 내의 적어도 하나의 지정된 행과 연관되고, 제 1 조합(a first combination)에서는 상기 지정된 행 내의 화소를 리세트하도록 동작하여 판독될 상기 지정된 행을 선택하고, 제 2 조합(a second combination)에서는 판독 중인 상기 지정된 행 다음의 상기 지정된 행 내의 상기 화소를 선택해제하도록 동작하는,능동 화소 센서 제조 방법.
- 제 11 항에 있어서,상기 생성 단계는,상기 지정된 행 내의 각 화소가 증폭기를 구비하는 상기 일부분을 생성하는 단계를 더 포함하되, 상기 일부분은 상기 제 1 조합의 제 1 결과로서 상기 증폭기는 열 버스에 접속되고, 상기 제 2 조합의 제 2 결과로서 상기 지정된 행 내의 화소는 상기 열 버스에 접속된 증폭기를 가지지 않는,능동 화소 센서 제조 방법.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/223,608 US6218656B1 (en) | 1998-12-30 | 1998-12-30 | Photodiode active pixel sensor with shared reset signal row select |
US9/223,608 | 1998-12-30 | ||
US09/223,608 | 1998-12-30 |
Publications (2)
Publication Number | Publication Date |
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KR20000048439A KR20000048439A (ko) | 2000-07-25 |
KR100750778B1 true KR100750778B1 (ko) | 2007-08-20 |
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Application Number | Title | Priority Date | Filing Date |
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KR1019990063213A KR100750778B1 (ko) | 1998-12-30 | 1999-12-28 | 능동 화소 센서 및 그 제조 방법 |
Country Status (6)
Country | Link |
---|---|
US (1) | US6218656B1 (ko) |
EP (1) | EP1017231B1 (ko) |
JP (1) | JP4829393B2 (ko) |
KR (1) | KR100750778B1 (ko) |
DE (1) | DE69930206T2 (ko) |
TW (1) | TW453108B (ko) |
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- 1999-10-30 TW TW088118904A patent/TW453108B/zh not_active IP Right Cessation
- 1999-12-01 EP EP99204059A patent/EP1017231B1/en not_active Expired - Lifetime
- 1999-12-01 DE DE69930206T patent/DE69930206T2/de not_active Expired - Lifetime
- 1999-12-27 JP JP37147299A patent/JP4829393B2/ja not_active Expired - Lifetime
- 1999-12-28 KR KR1019990063213A patent/KR100750778B1/ko active IP Right Grant
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Also Published As
Publication number | Publication date |
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KR20000048439A (ko) | 2000-07-25 |
JP2000232218A (ja) | 2000-08-22 |
DE69930206D1 (de) | 2006-05-04 |
TW453108B (en) | 2001-09-01 |
US6218656B1 (en) | 2001-04-17 |
JP4829393B2 (ja) | 2011-12-07 |
EP1017231B1 (en) | 2006-03-08 |
DE69930206T2 (de) | 2006-11-23 |
EP1017231A3 (en) | 2004-02-04 |
EP1017231A2 (en) | 2000-07-05 |
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